Showing 1–1 of 1 results for author: Zhiang, Z M

Studies of single doping of Mn and Fe in Si to deduce simple guidelines in selecting transition metal elements for growing Si-based spintronic materials

Authors: Michael Shaughnessy, C. Y. Fong, Ryan Snow, L. H. Yang, X. S. Chen, Z. M. Zhiang

Abstract: Single dopings of Mn and Fe in Si are investigated using 8-, 64-, and 216-atom supercells and a first-principles method based on density functional theory. Between the two transition metal elements (TMEs), atom sizes play an essential role in determining the contraction or the expansion of neighboring atoms around the TME dopant at a substitutional site. At a tetrahedral interstitial site, there i… ▽ More Single dopings of Mn and Fe in Si are investigated using 8-, 64-, and 216-atom supercells and a first-principles method based on density functional theory. Between the two transition metal elements (TMEs), atom sizes play an essential role in determining the contraction or the expansion of neighboring atoms around the TME dopant at a substitutional site. At a tetrahedral interstitial site, there is only expansion. Magnetic moments/TME at the two sites are calculated. Physical origins for these inter-related properties are discussed. A few suggestions about the growth of these Si-based alloys are given. △ Less

Submitted 18 August, 2011; v1 submitted 20 November, 2009; originally announced November 2009.

Comments: 5 figures

Journal ref: Phys. Rev. B 82, 035202 (2010)