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Light-induced optical orientation of magnetic moments in transition-metal doped hybrid metal halide perovskites
Authors:
Stanislav Bodnar,
Jonathan Zerhoch,
Shangpu Liu,
Andrii Shcherbakov,
Markus W. Heindl,
Alexey Sapozhnik,
Felix Deschler
Abstract:
Using optical orientation to manipulate magnetic moments in matter with light is a key objective in opto-spintronics, however, realizations of such control on ultrafast timescales are limited. Here, we report ultrafast optical control of magnetic moment orientation in magnetically doped metal halide perovskites. Employing intense pulses of circularly polarized light, we inject populations of spin-…
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Using optical orientation to manipulate magnetic moments in matter with light is a key objective in opto-spintronics, however, realizations of such control on ultrafast timescales are limited. Here, we report ultrafast optical control of magnetic moment orientation in magnetically doped metal halide perovskites. Employing intense pulses of circularly polarized light, we inject populations of spin-polarized charge carriers in pristine and manganese-doped MAPbBr3 thin films. Using transient Faraday rotation spectroscopy, we probe the ultrafast magnetic moment dynamics following photoexcitation and find that light-induced magnetization in doped samples is increased by a factor of 10. We attribute this to photoexcited carriers acting on the magnetic moments of manganese dopant-ions via the sp-d exchange interaction, which forces them to align on picosecond timescales. Our findings open new avenues for device structures that use hybrid metal halide perovskites for ultrafast optical manipulation and read-out of magnetic order with the potential for high switching rates.
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Submitted 27 June, 2024;
originally announced June 2024.
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Solution-processed NiPS3 thin films from Liquid Exfoliated Inks with Long-Lived Spin-Entangled Excitons
Authors:
Andrii Shcherbakov,
Kevin Synnatschke,
Stanislav Bodnar,
Johnathan Zerhoch,
Lissa Eyre,
Felix Rauh,
Markus W. Heindl,
Shangpu Liu,
Jan Konecny,
Ian D. Sharp,
Zdenek Sofer,
Claudia Backes,
Felix Deschler
Abstract:
Antiferromagnets are promising materials for future opto-spintronic applications since they show spin dynamics in the THz range and no net magnetization. Recently, layered van der Waals (vdW) antiferromagnets have been reported, which combine low-dimensional excitonic properties with complex spin-structure. While various methods for the fabrication of vdW 2D crystals exist, formation of large area…
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Antiferromagnets are promising materials for future opto-spintronic applications since they show spin dynamics in the THz range and no net magnetization. Recently, layered van der Waals (vdW) antiferromagnets have been reported, which combine low-dimensional excitonic properties with complex spin-structure. While various methods for the fabrication of vdW 2D crystals exist, formation of large area and continuous thin films is challenging because of either limited scalability, synthetic complexity, or low opto-spintronic quality of the final material. Here, we fabricate centimeter-scale thin films of the van der Waals 2D antiferromagnetic material NiPS3, which we prepare using a crystal ink made from liquid phase exfoliation (LPE). We perform statistical atomic force microscopy (AFM) and scanning electron microscopy (SEM) to characterize and control the lateral size and number of layers through this ink-based fabrication. Using ultrafast optical spectroscopy at cryogenic temperatures, we resolve the dynamics of photoexcited excitons. We find antiferromagnetic spin arrangement and spin-entangled Zhang-Rice multiplet excitons with lifetimes in the nanosecond range, as well as ultranarrow emission linewidths, despite the disordered nature of our films. Thus, our findings demonstrate scalable thin-film fabrication of high-quality NiPS3, which is crucial for translating this 2D antiferromagnetic material into spintronic and nanoscale memory devices and further exploring its complex spin-light coupled states.
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Submitted 21 March, 2023;
originally announced March 2023.
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Magnetic proximity effect on excitonic spin states in Mn-doped layered hybrid perovskites
Authors:
Timo Neumann,
Sascha Feldmann,
Philipp Moser,
Jonathan Zerhoch,
Tim van de Goor,
Alex Delhomme,
Thomas Winkler,
Jonathan J. Finley,
Clément Faugeras,
Martin S. Brandt,
Andreas V. Stier,
Felix Deschler
Abstract:
Materials combining the optoelectronic functionalities of semiconductors with control of the spin degree of freedom are highly sought after for the advancement of quantum technology devices. Here, we report the paramagnetic Ruddlesden-Popper hybrid perovskite Mn:(PEA)2PbI4 (PEA = phenethylammonium) in which the interaction of isolated Mn2+ ions with magnetically brightened excitons leads to circul…
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Materials combining the optoelectronic functionalities of semiconductors with control of the spin degree of freedom are highly sought after for the advancement of quantum technology devices. Here, we report the paramagnetic Ruddlesden-Popper hybrid perovskite Mn:(PEA)2PbI4 (PEA = phenethylammonium) in which the interaction of isolated Mn2+ ions with magnetically brightened excitons leads to circularly polarized photoluminescence. Using a combination of superconducting quantum interference device (SQUID) magnetometry and magneto-optical experiments, we find that the Brillouin-shaped polarization curve of the photoluminescence follows the magnetization of the material. This indicates coupling between localized manganese magnetic moments and exciton spins via a magnetic proximity effect. The saturation polarization of 15% at 4 K and 6 T indicates a highly imbalanced spin population and demonstrates that manganese doping enables efficient control of excitonic spin states in Ruddlesden-Popper perovskites. Our finding constitutes the first example of polarization control in magnetically doped hybrid perovskites and will stimulate research on this highly tuneable material platform that promises tailored interactions between magnetic moments and electronic states.
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Submitted 29 September, 2020;
originally announced September 2020.
