In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices
Authors:
Di Zhang,
Rohan Dhall,
Matthew M. Schneider,
Chengyu Song,
Hongyi Dou,
Sundar Kunwar,
Natanii R. Yazzie,
Jim Ciston,
Nicholas G. Cucciniello,
Pinku Roy,
Michael T. Pettes,
John Watt,
Winson Kuo,
Haiyan Wang,
Rodney J. McCabe,
Aiping Chen
Abstract:
Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the working mechanism of such interface-type RS devices are much less studied compared to that of the filament-type devices, which hinders the design and application of t…
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Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the working mechanism of such interface-type RS devices are much less studied compared to that of the filament-type devices, which hinders the design and application of the novel interface-type devices. In this work, we fabricate a metal/TiOx/TiN/Si (001) thin film memristor by using a one-step pulsed laser deposition. In situ transmission electron microscopy (TEM) imaging and current-voltage (I-V) characteristic demonstrate that the device is switched between high resistive state (HRS) and low resistive state (LRS) in a bipolar fashion with sweeping the applied positive and negative voltages. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charged defects (such as oxygen vacancies) can migrate along the intrinsic grain boundaries of TiOx insulating phase under electric field without forming obvious conductive filaments, resulting in the modulation of Schottky barriers at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a novel perspective on RS processes and opens up new technological opportunities for fabricating ultra-low-energy nitride-based memristive devices.
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Submitted 30 October, 2024;
originally announced October 2024.
