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X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite "FORCE"
Authors:
Masatoshi Kitajima,
Kouichi Hagino,
Takayoshi Kohmura,
Mitsuki Hayashida,
Kenji Oono,
Kousuke Negishi,
Keigo Yarita,
Toshiki Doi,
Shun Tsunomachi,
Takeshi G. Tsuru,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Takaaki Tanaka,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Masataka Yukumoto,
Kira Mieda,
Syuto Yonemura,
Tatsunori Ishida,
Yasuo Arai,
Ikuo Kurachi
Abstract:
We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as…
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We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as cosmic rays. From previous studies, positive charges trapped in the SiO2 insulator are known to cause the degradation of the detector performance. To improve the radiation hardness, we developed XRPIX equipped with Double-SOI (D-SOI) structure, introducing an additional silicon layer in the SiO2 insulator. This structure is aimed at compensating for the effect of the trapped positive charges. Although the radiation hardness to cosmic rays of the D-SOI detectors has been evaluated, the radiation effect due to the X-ray irradiation has not been evaluated. Then, we conduct an X-ray irradiation experiment using an X-ray generator with a total dose of 10 krad at the SiO2 insulator, equivalent to 7 years in orbit. As a result of this experiment, the energy resolution in full-width half maximum for the 5.9 keV X-ray degrades by 17.8 $\pm$ 2.8% and the dark current increases by 89 $\pm$ 13%. We also investigate the physical mechanism of the increase in the dark current due to X-ray irradiation using TCAD simulation. It is found that the increase in the dark current can be explained by the increase in the interface state density at the Si/SiO2 interface.
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Submitted 26 May, 2022;
originally announced May 2022.
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Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure
Authors:
Mitsuki Hayashida,
Kouichi Hagino,
Takayoshi Kohmura,
Masatoshi Kitajima,
Keigo Yarita,
Kenji Oono,
Kousuke Negishi,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-…
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X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
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Submitted 11 August, 2021;
originally announced August 2021.
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Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy
Authors:
Kouichi Hagino,
Keigo Yarita,
Kousuke Negishi,
Kenji Oono,
Mitsuki Hayashida,
Masatoshi Kitajima,
Takayoshi Kohmura,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Yuki Amano,
Ryota Kodama,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Masataka Yukumoto,
Takahiro Hida,
Yasuo Arai,
Ikuo Kurachi,
Tsuyoshi Hamano,
Hisashi Kitamura
Abstract:
The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the…
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The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.
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Submitted 16 July, 2020;
originally announced July 2020.
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Sub-pixel Response of Double-SOI Pixel Sensors for X-ray Astronomy
Authors:
K. Hagino,
K. Negishi,
K. Oono,
K. Yarita,
T. Kohmura,
T. G. Tsuru,
T. Tanaka,
S. Harada,
K. Kayama,
H. Matsumura,
K. Mori,
A. Takeda,
Y. Nishioka,
M. Yukumoto,
K. Fukuda,
T. Hida,
Y. Arai,
I. Kurachi,
S. Kishimoto
Abstract:
We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than…
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We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than $\sim 10{\rm ~μs}$, which enables low background observation by adopting the anti-coincidence technique. One of the major issues in the development of XRPIX is the electrical interference between the sensor layer and circuit layer, which causes nonuniform detection efficiency at the pixel boundaries. In order to reduce the interference, we introduce a Double-SOI (D-SOI) structure, in which a thin Si layer (middle Si) is added to the insulator layer of the SOI structure. In this structure, the middle Si layer works as an electrical shield to decouple the sensor layer and circuit layer. We measured the detector response of the XRPIX with D-SOI structure at KEK. We irradiated the X-ray beam collimated with $4{\rm ~μmφ}$ pinhole, and scanned the device with $6{\rm ~μm}$ pitch, which is 1/6 of the pixel size. In this paper, we present the improvement in the uniformity of the detection efficiency in D-SOI sensors, and discuss the detailed X-ray response and its physical origins.
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Submitted 26 August, 2019;
originally announced August 2019.
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Measurement of Charge Cloud Size in X-ray SOI Pixel Sensors
Authors:
Kouichi Hagino,
Kenji Oono,
Kousuke Negishi,
Keigo Yarita,
Takayoshi Kohmura,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Sodai Harada,
Tomoyuki Okuno,
Kazuho Kayama,
Yuki Amano,
Hideaki Matsumura,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Kohei Fukuda,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Toshinobu Miyoshi,
Shunji Kishimoto
Abstract:
We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $μ$m with a 4-$μ$m$φ$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of c…
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We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $μ$m with a 4-$μ$m$φ$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of charge clouds of 5.0 keV X-ray is estimated to be $σ_{\rm cloud} = 4.30 \pm 0.07$ $μ$m. Compared to the detector response simulation, the estimated charge cloud size is well explained by a combination of photoelectron range, thermal diffusion, and Coulomb repulsion. Moreover, by analyzing the fraction of multi-pixel events in various energies, we find that the energy dependence of the charge cloud size is also consistent with the simulation.
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Submitted 30 May, 2019;
originally announced May 2019.
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Subpixel Response of SOI Pixel Sensor for X-ray Astronomy with Pinned Depleted Diode: First Result from Mesh Experiment
Authors:
Kazuho Kayama,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Sodai Harada,
Tomoyuki Okuno,
Yuki Amano,
Junko S. Hiraga,
Masayuki Yoshida,
Yasuaki Kamata,
Shotaro Sakuma,
Daito Yuhi,
Yukino Urabe,
Hiroshi Tsunemi,
Hideaki Matsumura,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Yasuo Arai,
Ikuo Kurachi,
Ayaki Takeda,
Koji Mori
, et al. (9 additional authors not shown)
Abstract:
We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully…
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We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 $μ$ m CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 $μ$ s time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution.
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Submitted 26 May, 2019;
originally announced May 2019.
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Evaluation of Kyoto's Event-Driven X-ray Astronomical SOI Pixel Sensor with a Large Imaging Area
Authors:
Hideki Hayashi,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Hideaki Matsumura,
Katsuhiro Tachibana,
Sodai Harada,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Ikuo Kurachi,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Takayoshi Kohmura,
Kouichi Hagino,
Kousuke Negishi,
Kenji Oono
, et al. (1 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processe…
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We have been developing monolithic active pixel sensors, named ``XRPIX'', based on the silicon-on-insulator (SOI) pixel technology for future X-ray astronomy satellites. XRPIX has the function of event trigger and hit address outputs. This function allows us to read out analog signals only of hit pixels on trigger timing, which is referred to as the event-driven readout mode. Recently, we processed ``XRPIX5b'' with the largest imaging area of 21.9~mm $\times$ 13.8~mm in the XRPIX series. X-ray spectra are successfully obtained from all the pixels, and the readout noise is 46~e$^-$~(rms) in the frame readout mode. The gain variation was measured to be 1.2\%~(FWHM) among the pixels. We successfully obtain the X-ray image in the event-driven readout mode.
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Submitted 29 April, 2019;
originally announced April 2019.
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Performance of SOI Pixel Sensors Developed for X-ray Astronomy
Authors:
Takaaki Tanaka,
Takeshi Go Tsuru,
Hiroyuki Uchida,
Sodai Harada,
Tomoyuki Okuno,
Kazuho Kayama,
Yuki Amano,
Hideaki Matsumura,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Kohei Fukuda,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Takayoshi Kohmura,
Kouichi Hagino,
Kousuke Negishi
, et al. (2 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithi…
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We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity.
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Submitted 14 December, 2018;
originally announced December 2018.
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X-ray response evaluation in subpixel level for X-ray SOI pixel detectors
Authors:
Kousuke Negishi,
Takayoshi Kohmura,
Kouichi Hagino,
Taku Kogiso,
Kenji Oono,
Keigo Yarita,
Akinori Sasaki,
Koki Tamasawa,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hideaki Matsumura,
Katsuhiro Tachibana,
Hideki Hayashi,
Sodai Harada,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Toshinobu Miyoshi,
Shunji Kishimoto,
Ikuo Kurachi
Abstract:
We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $μ\rm s$ and has Correlated Double Sampling function to reduce e…
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We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $μ\rm s$ and has Correlated Double Sampling function to reduce electric noises. The good time resolution enables the XRPIX to reduce Non X-ray Background in the high energy band above 10\,keV drastically by using anti-coincidence technique with active shield counters surrounding XRPIX. In order to increase the soft X-ray sensitivity, it is necessary to make the dead layer on the X-ray incident surface as thin as possible. Since XRPIX1b, which is a device at the initial stage of development, is a front-illuminated (FI) type of XRPIX, low energy X-ray photons are absorbed in the 8 $\rm μ$m thick circuit layer, lowering the sensitivity in the soft X-ray band. Therefore, we developed a back-illuminated (BI) device XRPIX2b, and confirmed high detection efficiency down to 2.6 keV, below which the efficiency is affected by the readout noise. In order to further improve the detection efficiency in the soft X-ray band, we developed a back-illuminated device XRPIX3b with lower readout noise. In this work, we irradiated 2--5 keV X-ray beam collimated to 4 $\rm μm φ$ to the sensor layer side of the XRPIX3b at 6 $\rm μm$ pitch. In this paper, we reported the uniformity of the relative detection efficiency, gain and energy resolution in the subpixel level for the first time. We also confirmed that the variation in the relative detection efficiency at the subpixel level reported by Matsumura et al. has improved.
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Submitted 25 October, 2018;
originally announced October 2018.
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Proton Radiation Damage Experiment for X-Ray SOI Pixel Detectors
Authors:
Keigo Yarita,
Takayoshi Kohmura,
Kouichi Hagino,
Taku Kogiso,
Kenji Oono,
Kousuke Negishi,
Koki Tamasawa,
Akinori Sasaki,
Satoshi Yoshiki,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hideaki Matsumura,
Katsuhiro Tachibana,
Hideki Hayashi,
Sodai Harada,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Toshinobu Miyoshi,
Ikuo Kurachi,
Tsuyoshi Hamano
, et al. (1 additional authors not shown)
Abstract:
In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors…
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In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors called XRPIX based on silicon-on-insulator technology at HIMAC in National Institute of Radiological Sciences. We irradiated 6 MeV protons with a total dose of 0.5 krad, equivalent to 6 years irradiation in orbit. As a result, the gain increases by 0.2% and the energy resolution degrades by 0.5%. Finally we irradiated protons up to 20 krad and found that detector performance degraded significantly at 5 krad. With 5 krad irradiation corresponding to 60 years in orbit, the gain increases by 0.7% and the energy resolution worsens by 10%. By decomposing into noise components, we found that the increase of the circuit noise is dominant in the degradation of the energy resolution.
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Submitted 22 October, 2018;
originally announced October 2018.
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Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure
Authors:
Sodai Harada,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Hideaki Matsumura,
Katsuhiro Tachibana,
Hideki Hayashi,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Yasuo Arai,
Ikuo Kurachi,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Takayoshi Kohmura,
Kouichi Hagino,
Kousuke Negishi,
Kenji Oono
, et al. (1 additional authors not shown)
Abstract:
We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The…
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We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology, and is equipped with the so-called "Event-Driven readout", which allows reading out only hit pixels by using the trigger circuit implemented in each pixel. The current version of XRPIX has lower spectral performance in the Event-Driven readout mode than in the Frame readout mode, which is due to the interference between the sensor layer and the circuit layer. The interference also lowers the gain. In order to suppress the interference, we developed a new device, "XRPIX6E" equipped with the Pinned Depleted Diode structure. A sufficiently highly-doped buried p-well is formed at the interface between the buried oxide layer and the sensor layer, and acts as a shield layer. XRPIX6E exhibits improved spectral performances both in the Event-Driven readout mode and in the Frame readout mode in comparison to previous devices. The energy resolutions in full width at half maximum at 6.4 keV are 236 $\pm$ 1 eV and 335 $\pm$ 4 eV in the Frame and Event-Driven readout modes, respectively. There are differences between the readout noise and the spectral performance in the two modes, which suggests that some mechanism still degrades the performance in the Event-Driven readout mode.
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Submitted 27 September, 2018;
originally announced September 2018.
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Kyoto's Event-Driven X-ray Astronomy SOI pixel sensor for the FORCE mission
Authors:
Takeshi G. Tsuru,
Hideki Hayashi,
Katsuhiro Tachibana,
Sodai Harada,
Hiroyuki Uchida,
Takaaki Tanaka,
Yasuo Arai,
Ikuo Kurachi,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Nobuaki Takebayashi,
Shoma Yokoyama,
Kohei Fukuda,
Takayoshi Kohmura,
Kouichi Hagino,
Kenji Ohno,
Kohsuke Negishi,
Keigo Yarita,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Shunta Nakanishi,
Hiroki Kamehama
, et al. (1 additional authors not shown)
Abstract:
We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with…
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We have been developing monolithic active pixel sensors, X-ray Astronomy SOI pixel sensors, XRPIXs, based on a Silicon-On-Insulator (SOI) CMOS technology as soft X-ray sensors for a future Japanese mission, FORCE (Focusing On Relativistic universe and Cosmic Evolution). The mission is characterized by broadband (1-80 keV) X-ray imaging spectroscopy with high angular resolution ($<15$~arcsec), with which we can achieve about ten times higher sensitivity in comparison to the previous missions above 10~keV. Immediate readout of only those pixels hit by an X-ray is available by an event trigger output function implemented in each pixel with the time resolution higher than $10~{\rm μsec}$ (Event-Driven readout mode). It allows us to do fast timing observation and also reduces non-X-ray background dominating at a high X-ray energy band above 5--10~keV by adopting an anti-coincidence technique. In this paper, we introduce our latest results from the developments of the XRPIXs. (1) We successfully developed a 3-side buttable back-side illumination device with an imaging area size of 21.9~mm$\times$13.8~mm and an pixel size of $36~{\rm μm} \times 36~{\rm μm}$. The X-ray throughput with the device reaches higher than 0.57~kHz in the Event-Driven readout mode. (2) We developed a device using the double SOI structure and found that the structure improves the spectral performance in the Event-Driven readout mode by suppressing the capacitive coupling interference between the sensor and circuit layers. (3) We also developed a new device equipped with the Pinned Depleted Diode structure and confirmed that the structure reduces the dark current generated at the interface region between the sensor and the SiO$_2$ insulator layers. The device shows an energy resolution of 216~eV in FWHM at 6.4~keV in the Event-Driven readout mode.
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Submitted 29 July, 2018;
originally announced July 2018.
