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Key directions for research and development of superconducting radio frequency cavities
Authors:
S. Belomestnykh,
S. Posen,
D. Bafia,
S. Balachandran,
M. Bertucci,
A. Burrill,
A. Cano,
M. Checchin,
G. Ciovati,
L. D. Cooley,
G. Dalla Lana Semione,
J. Delayen,
G. Eremeev,
F. Furuta,
F. Gerigk,
B. Giaccone,
D. Gonnella,
A. Grassellino,
A. Gurevich,
W. Hillert,
M. Iavarone,
J. Knobloch,
T. Kubo,
W. K. Kwok,
R. Laxdal
, et al. (31 additional authors not shown)
Abstract:
Radio frequency superconductivity is a cornerstone technology for many future HEP particle accelerators and experiments from colliders to proton drivers for neutrino facilities to searches for dark matter. While the performance of superconducting RF (SRF) cavities has improved significantly over the last decades, and the SRF technology has enabled new applications, the proposed HEP facilities and…
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Radio frequency superconductivity is a cornerstone technology for many future HEP particle accelerators and experiments from colliders to proton drivers for neutrino facilities to searches for dark matter. While the performance of superconducting RF (SRF) cavities has improved significantly over the last decades, and the SRF technology has enabled new applications, the proposed HEP facilities and experiments pose new challenges. To address these challenges, the field continues to generate new ideas and there seems to be a vast room for improvements. In this paper we discuss the key research directions that are aligned with and address the future HEP needs.
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Submitted 21 August, 2022; v1 submitted 3 April, 2022;
originally announced April 2022.
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Nature of the metal-insulator transition in few-unit-cell-thick LaNiO3 films
Authors:
M. Golalikhani,
Q. Lei,
R. U. Chandrasena,
L. Kasaei,
H. Park,
J. Bai,
P. Orgiani,
J. Ciston,
G. E. Sterbinsky,
D. A. Arena,
P. Shafer,
E. Arenholz,
B. A. Davidson,
A. J. Millis,
A. X. Gray,
X. X. Xi
Abstract:
The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect th…
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The nature of the metal insulator transition in thin films and superlattices of LaNiO3 with only few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect the observable properties in the ultrathin films. Here we report results obtained for near-ideal LaNiO3 films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO3 substrates. We find that the room-temperature metallic behavior persists until the film thickness is reduced to an unprecedentedly small 1.5 unit cells (NiO2 termination). Electronic structure measurements using x-ray absorption spectroscopy and first-principles calculation suggest that oxygen vacancies existing in the films also contribute to the metal insulator transition.
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Submitted 19 June, 2018;
originally announced June 2018.
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Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy
Authors:
Qingyu Lei,
Maryam Golalikhani,
Bruce A. Davidson,
Guozhen Liu,
D. G. Schlom,
Qiao Qiao,
Yimei Zhu,
Ravini U. Chandrasena,
Weibing Yang,
Alexander X. Gray,
Elke Arenholz,
Andrew K. Farrar,
Dmitri A. Tenne,
Minhui Hu,
Jiandong Guo,
Rakesh K. Singh,
X. X. Xi
Abstract:
Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-…
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Advancements in nanoscale engineering of oxide interfaces and heterostructures have led to discoveries of emergent phenomena and new artificial materials. Combining the strengths of reactive molecular-beam epitaxy and pulsed-laser deposition, we show here, with examples of Sr1+xTi1-xO3+delta, Ruddlesden-Popper phase Lan+1NinO3n+1 (n = 4), and LaAl1+yO3(1+0.5y)/SrTiO3 interfaces, that atomic layer-by-layer laser molecular-beam epitaxy (ALL-Laser MBE) significantly advances the state of the art in constructing oxide materials with atomic layer precision and control over stoichiometry. With ALL-Laser MBE we have produced conducting LaAlO3/SrTiO3 interfaces at high oxygen pressures that show no evidence of oxygen vacancies, a capability not accessible by existing techniques. The carrier density of the interfacial two-dimensional electron gas thus obtained agrees quantitatively with the electronic reconstruction mechanism.
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Submitted 21 October, 2016;
originally announced October 2016.
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Roles of intrinsic anisotropy and pi-band pairbreaking effects on critical currents in tilted c-axis MgB2 films probed by magneto-optical and transport measurements
Authors:
A. A. Polyanskii,
F. Kametani,
D. Abraimov,
A. Gurevich,
A. Yamamoto,
I. Pallecchi,
M. Putti,
C. Zhuang,
T. Tan,
X. X. Xi
Abstract:
Investigations of MgB2 and Fe-based superconductors in recent years have revealed many unusual effects of multiband superconductivity but manifestations of anisotropic multiband effects in the critical current density Jc have not been addressed experimentally, mostly because of the difficulties to measure Jc along the c-axis. To investigate the effect of very different intrinsic anisotropies of si…
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Investigations of MgB2 and Fe-based superconductors in recent years have revealed many unusual effects of multiband superconductivity but manifestations of anisotropic multiband effects in the critical current density Jc have not been addressed experimentally, mostly because of the difficulties to measure Jc along the c-axis. To investigate the effect of very different intrinsic anisotropies of sigma and pi electron bands in MgB2 on current transport, we grew epitaxial films with tilted c-axis (THETA ~ 19.5°), which enabled us to measure the components of Jc both along the ab-plane and the c-axis using magneto-optical and transport techniques. These measurements were combined with scanning and transmission electron microscopy, which revealed terraced steps on the surface of the c-axis tilted films. The measured field and temperature dependencies of the anisotropic Jc(H) show that Jc,L parallel to the terraced steps is higher than Jc,T perpendicular to the terraced steps, and Jc of thinner films (50 nm) obtained from transport experiments at 0.1 T reaches ~10% of the depairing current density Jd in the ab plane, while magneto-optical imaging revealed much higher Jc at lower fields. To analyze the experimental data we developed a model of anisotropic vortex pinning which accounts for the observed behavior of Jc in the c-axis tilted films and suggests that the apparent anisotropy of Jc is affected by current pairbreaking effects in the weaker π band. Our results indicate that the out-of-plane current transport mediated by the π band could set the ultimate limit of Jc in MgB2 polycrystals.
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Submitted 6 December, 2014;
originally announced December 2014.
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Energy Gap Substructures in Conductance Measurements of MgB2-based Josephson Junctions: Beyond the 2-Gap Model
Authors:
Steve Carabello,
Joseph G. Lambert,
Jerome Mlack,
Wenqing Dai,
Qi Li,
Ke Chen,
Daniel Cunnane,
C. G. Zhuang,
X. X. Xi,
Roberto C. Ramos
Abstract:
Several theoretical analyses of the two superconducting energy gaps of magnesium diboride, $Δ_π$ and $Δ_σ$, predict substructures within each energy gap, rather than two pure numbers. Recent experiments have revealed similar structures. We report tunneling conductance data providing additional experimental evidence for these features. The absence of these features in c-axis tunneling, and a sharp…
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Several theoretical analyses of the two superconducting energy gaps of magnesium diboride, $Δ_π$ and $Δ_σ$, predict substructures within each energy gap, rather than two pure numbers. Recent experiments have revealed similar structures. We report tunneling conductance data providing additional experimental evidence for these features. The absence of these features in c-axis tunneling, and a sharp peak in the subgap (associated with the counterelectrode material), support the conclusion that these features are intrinsic to MgB2. By demonstrating the inadequacy of a simple two-gap model in fitting the data, we illustrate that some distinctions between theoretical models of energy gap substructures are experimentally accessible.
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Submitted 21 March, 2014;
originally announced March 2014.
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Near-Field Microwave Magnetic Nanoscopy of Superconducting Radio Frequency Cavity Materials
Authors:
Tamin Tai,
Behnood G. Ghamsari,
Thomas R. Bieler,
Teng Tan,
X. X. Xi,
Steven M. Anlage
Abstract:
A localized measurement of the RF critical field on superconducting radio frequency (SRF) cavity materials is a key step to identify specific defects that produce quenches of SRF cavities. Two new measurements are performed to demonstrate these capabilities with a novel near-field scanning probe microwave microscope. The first is a third harmonic nonlinear measurement on a high Residual- Resistanc…
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A localized measurement of the RF critical field on superconducting radio frequency (SRF) cavity materials is a key step to identify specific defects that produce quenches of SRF cavities. Two new measurements are performed to demonstrate these capabilities with a novel near-field scanning probe microwave microscope. The first is a third harmonic nonlinear measurement on a high Residual- Resistance-Ratio bulk Nb sample showing strong localized nonlinear response for the first time, with surface RF magnetic field $B_{surface} \sim 10^{2}$ $mT$. The second is a raster scanned harmonic response image on a high quality $MgB_{2}$ thin film demonstrating a quench defect-free surface over large areas.
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Submitted 21 December, 2013;
originally announced December 2013.
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MgB2 nonlinear properties investigated under localized high rf magnetic field excitation-report 2
Authors:
Tamin Tai,
B. G. Ghamsari,
T. Tan,
C. G. Zhuang,
X. X. Xi,
Steven M. Anlage
Abstract:
The high transition temperature and low surface resistance of MgB2 attracts interest in its potential application in superconducting radio frequency accelerating cavities. However, compared to traditional Nb cavities, the viability of MgB2 at high rf fields is still open to question. Our approach is to study the nonlinear electrodynamics of the material under localized rf magnetic fields. Because…
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The high transition temperature and low surface resistance of MgB2 attracts interest in its potential application in superconducting radio frequency accelerating cavities. However, compared to traditional Nb cavities, the viability of MgB2 at high rf fields is still open to question. Our approach is to study the nonlinear electrodynamics of the material under localized rf magnetic fields. Because of the presence of the small superconducting gap in the $π$ band, the nonlinear response of MgB2 at low temperature is potentially complicated compared to a single-gap s-wave superconductor such as Nb. Understanding the mechanisms of nonlinearity coming from the two-band structure of MgB2, as well as extrinsic sources of nonlinearity, is an urgent requirement. A localized and strong rf magnetic field, created by a magnetic write head, is integrated into our nonlinear-Meissner-effect scanning microwave microscope [Tamin Tai, X. X. Xi, C. G. Zhuang, D. I. Mircea, and S. M. Anlage, IEEE Trans. Appl. Supercond. 21, 2615 (2011)]. MgB2 films with thickness 50 nm, fabricated by a hybrid physical-chemical vapor deposition technique on dielectric substrates, are measured at a fixed location and show a strongly temperature-dependent third harmonic response. We propose that several possible mechanisms are responsible for this nonlinear response.
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Submitted 6 September, 2013;
originally announced September 2013.
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Two-band effect on the vortex dynamics and critical current density in an anisotropic MgB$_2$ thin film
Authors:
Jeehoon Kim,
N. Haberkorn,
E. Nazaretski,
R. de Paula,
X. X. Xi,
T. Tajima,
R. Movshovich,
L. Civale
Abstract:
We report the influence of intrinsic superconducting parameters on the vortex dynamics and the critical current densities of a MgB$_2$ thin film. The small magnetic penetration depth of λ= 50 nm at T=4 K is related to a clean π-band, and transport and magnetization data show an upper critical field similar to those reported in clean single crystals. We find a high self-field critical current densi…
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We report the influence of intrinsic superconducting parameters on the vortex dynamics and the critical current densities of a MgB$_2$ thin film. The small magnetic penetration depth of λ= 50 nm at T=4 K is related to a clean π-band, and transport and magnetization data show an upper critical field similar to those reported in clean single crystals. We find a high self-field critical current density Jc, which is strongly reduced with applied magnetic field, and attribute this to suppression of the superconductivity in the π-band. The temperature dependence of the creep rate S(T) at low magnetic field can be explained by a simple Anderson-Kim mechanism. The system shows high pinning energies at low field that are strongly suppressed by high field, which is consistent with a two-band contribution.
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Submitted 1 March, 2013;
originally announced March 2013.
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Mgb2 Nonlinear Properties Investigated under Localized High RF Magnetic Field Excitation
Authors:
Tamin Tai,
Behnood G. Ghamsari,
Steven M. Anlage,
C. G. Zhuang,
X. X. Xi
Abstract:
In order to increase the accelerating gradient of Superconducting Radio Frequency (SRF) cavities, Magnesium Diboride (MgB2) opens up hope because of its high transition temperature and potential for low surface resistance in the high RF field regime. However, due to the presence of the small superconducting gap in the π band, the nonlinear response of MgB2 is potentially quite large compared to a…
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In order to increase the accelerating gradient of Superconducting Radio Frequency (SRF) cavities, Magnesium Diboride (MgB2) opens up hope because of its high transition temperature and potential for low surface resistance in the high RF field regime. However, due to the presence of the small superconducting gap in the π band, the nonlinear response of MgB2 is potentially quite large compared to a single gap s-wave superconductor (SC) such as Nb. Understanding the mechanisms of nonlinearity coming from the two-band structure of MgB2, as well as extrinsic sources, is an urgent requirement. A localized and strong RF magnetic field, created by a magnetic write head, is integrated into our nonlinear-Meissner-effect scanning microwave microscope [1]. MgB2 films with thickness 50 nm, fabricated by a hybrid physical-chemical vapor deposition technique on dielectric substrates, are measured at a fixed location and show a strongly temperature-dependent third harmonic response. We propose that at least two mechanisms are responsible for this nonlinear response, one of which involves vortex nucleation and penetration into the film. [1] T. M. Tai, X. X. Xi, C. G. Zhuang, D. I. Mircea, S. M. Anlage, "Nonlinear Near-Field Microwave Microscope for RF Defect Localization in Superconductors", IEEE Trans. Appl. Supercond. 21, 2615 (2011).
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Submitted 22 February, 2012;
originally announced February 2012.
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Influence of Intrinsic Electronic Properties on Light Transmission through Subwavelength Holes on Gold and MgB2 Thin Films
Authors:
Xu Fang,
Chenggang Zhuang,
Zhenchao Wen,
Xiufeng Han,
Qingrong Feng,
X. X. Xi,
Franco Nori,
Xincheng Xie,
Qian Niu,
Xianggang Qiu
Abstract:
We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The experimental data is consistent with analytical calculations, and is attributed to the temperature change of the conductivity of both films. The transmission versus con…
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We show how intrinsic material properties modify light transmission through subwavelength hole arrays on thin metallic films in the THz regime. We compare the temperature-dependent transmittance of Au films and MgB$_{2}$ films. The experimental data is consistent with analytical calculations, and is attributed to the temperature change of the conductivity of both films. The transmission versus conductivity is interpreted within the open resonator model when taking the skin depth into consideration. We also show that the efficiency of this temperature control depends on the ratio of the transmission peak frequency to the superconducting energy gap in MgB$_{2}$ films.
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Submitted 3 December, 2011;
originally announced December 2011.
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Nonlinear Near-Field Microwave Microscope For RF Defect Localization in Superconductors
Authors:
Tamin Tai,
X. X. Xi,
C. G. Zhuang,
Dragos I. Mircea,
Steven M. Anlage
Abstract:
Niobium-based Superconducting Radio Frequency (SRF) cavity performance is sensitive to localized defects that give rise to quenches at high accelerating gradients. In order to identify these material defects on bulk Nb surfaces at their operating frequency and temperature, it is important to develop a new kind of wide bandwidth microwave microscopy with localized and strong RF magnetic fields. By…
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Niobium-based Superconducting Radio Frequency (SRF) cavity performance is sensitive to localized defects that give rise to quenches at high accelerating gradients. In order to identify these material defects on bulk Nb surfaces at their operating frequency and temperature, it is important to develop a new kind of wide bandwidth microwave microscopy with localized and strong RF magnetic fields. By taking advantage of write head technology widely used in the magnetic recording industry, one can obtain ~200 mT RF magnetic fields, which is on the order of the thermodynamic critical field of Nb, on submicron length scales on the surface of the superconductor. We have successfully induced the nonlinear Meissner effect via this magnetic write head probe on a variety of superconductors. This design should have a high spatial resolution and is a promising candidate to find localized defects on bulk Nb surfaces and thin film coatings of interest for accelerator applications.
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Submitted 17 August, 2010;
originally announced August 2010.
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Broadband Dielectric Spectroscopy of Ruddlesden-Popper Sr$_{n+1}$Ti$_{n}$O$_{3n+1}$ ($n$ = 1, 2, 3) Thin Films
Authors:
N. D. Orloff,
W. Tian,
C. J. Fennie,
C. -H. Lee,
D. Gu,
J. Mateu,
X. X. Xi,
K. M. Rabe,
D. G. Schlom,
I. Takeuchi,
J. C. Booth
Abstract:
We explore the frequency-dependent relative permittivity of Ruddlesden-Popper series Sr(n+1)Ti(n)O(3n+1) (n =1,2,3) thin films as a function of temperature and dc electric field. Interdigitated capacitors and coplanar waveguides were used to extract the frequency response from 500 Hz to 40 GHz. At room temperature, the in-plane relative permittivities obtained for Sr(n+1)Ti(n)O(3n+1) (n =1,2,3)…
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We explore the frequency-dependent relative permittivity of Ruddlesden-Popper series Sr(n+1)Ti(n)O(3n+1) (n =1,2,3) thin films as a function of temperature and dc electric field. Interdigitated capacitors and coplanar waveguides were used to extract the frequency response from 500 Hz to 40 GHz. At room temperature, the in-plane relative permittivities obtained for Sr(n+1)Ti(n)O(3n+1) (n =1,2,3) were 42+/-3, 54+/-3, and 77+/-2, respectively, and were independent of frequency. At low temperatures, permittivity increases and electric field tunability develops in Sr(4)Ti(3)O(10).
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Submitted 9 February, 2009;
originally announced February 2009.
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Two-band parallel conductivity at terahertz frequencies in the superconducting state of MgB$_2$.
Authors:
M. Ortolani,
P. Dore,
D. Di Castro,
A. Perucchi,
S. Lupi,
V. Ferrando,
M. Putti,
I. Pallecchi,
C. Ferdeghini,
X. X. Xi
Abstract:
The optical response of the two-band superconductor MgB$_2$ has been studied in the 0.7-4 THz range on films with very low impurity level. The effect of the high-energy $σ$-gap is observed in the ratio $R_S/R_N$ between the normal and superconducting state reflectance, while in a neutron irradiated film with a slightly higher impurity level mainly the effect of the $π$-gap is evident as reported…
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The optical response of the two-band superconductor MgB$_2$ has been studied in the 0.7-4 THz range on films with very low impurity level. The effect of the high-energy $σ$-gap is observed in the ratio $R_S/R_N$ between the normal and superconducting state reflectance, while in a neutron irradiated film with a slightly higher impurity level mainly the effect of the $π$-gap is evident as reported in previous experiments. At terahertz frequencies, the electrodynamic of MgB$_2$ can be well described by the two-band parallel conductivity model and is dominated by the $π$-bands when the impurity level is only slightly higher than that of an ultra-clean sample.
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Submitted 21 January, 2008;
originally announced January 2008.
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Scaling of Hall Resistivity in the Mixed State of MgB2 Films
Authors:
Huan Yang,
Ying Jia,
Lei Shan,
Chenggang Zhuang,
X. X. Xi,
Qi Li,
Zikui Liu,
Qingrong Feng,
Hai-Hu Wen
Abstract:
The longitudinal resistivity (rho_{xx}) and transverse resistivity (rho_{xy}) of MgB2 thin films in the mixed state were studied in detail. We found that the temperature dependencies of rho_{xx} and ρ_{xy} at a fixed magnetic field (H) satisfy the scaling law of $ρ_{xy}=Aρ_{xx}^β$, where the exponent beta varies around 2.0 for different fields. In the low field region (below 1T), beta maintains…
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The longitudinal resistivity (rho_{xx}) and transverse resistivity (rho_{xy}) of MgB2 thin films in the mixed state were studied in detail. We found that the temperature dependencies of rho_{xx} and ρ_{xy} at a fixed magnetic field (H) satisfy the scaling law of $ρ_{xy}=Aρ_{xx}^β$, where the exponent beta varies around 2.0 for different fields. In the low field region (below 1T), beta maintains a constant value of 2.0 due to the weak pinning strength of the vortices, mainly from the superfluid of the pi band. When H>1T, beta drops abruptly to its lowest value at about 2T because of the proliferation of quasiparticles from the pi-band and, hence, the motion of the vortices from the superfluid of the sigma-band dominates the dissipation. As the field is increased further, the vortex pinning strength is weakened and beta increases monotonically towards 2.0 at a high field. All the results presented here are in good agreement with the expectation of the vortex physics of a multi-band superconductor.
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Submitted 5 January, 2008;
originally announced January 2008.
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Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films
Authors:
M. Monni,
I. Pallecchi,
C. Ferdeghini,
V. Ferrando,
A. Floris,
E. Galleani d'Agliano,
E. Lehmann,
I. Sheikin,
C. Tarantini,
X. X. Xi,
S. Massidda,
M. Putti
Abstract:
We report magnetoresistance (MR) measurements on MgB2 and the corresponding full account from ab-initio calculations; we suggest that this combination can be a useful tool to probe electron- phonon coupling. We obtain good quantitative agreement between high field measurements on neutron irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of…
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We report magnetoresistance (MR) measurements on MgB2 and the corresponding full account from ab-initio calculations; we suggest that this combination can be a useful tool to probe electron- phonon coupling. We obtain good quantitative agreement between high field measurements on neutron irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of s-carriers.
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Submitted 25 June, 2007;
originally announced June 2007.
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Mixed-State Dissipation in Zero Temperature Limit in $MgB_2$ Thin Films
Authors:
Y. Jia,
Y. Huang,
H. Yang,
L. Shan,
C. Ren,
C. G. Zhuang,
Y. Cui,
Qi Li,
Z. K. Liu,
X. X. Xi,
H. H. Wen
Abstract:
We have studied mixed-state dissipation in epitaxial MgB$_2$ thin films by measurements of resistive transition, current-voltage characteristics, Hall effect, and point-contact tunnelling spectrum. We found that unlike single gap superconductors with negligible vortex quantum fluctuations in which vortices are frozen at T=0 K, finite zero-temperature dissipation due to vortex motion exists in Mg…
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We have studied mixed-state dissipation in epitaxial MgB$_2$ thin films by measurements of resistive transition, current-voltage characteristics, Hall effect, and point-contact tunnelling spectrum. We found that unlike single gap superconductors with negligible vortex quantum fluctuations in which vortices are frozen at T=0 K, finite zero-temperature dissipation due to vortex motion exists in MgB$_2$ over a wide magnetic field range. This dissipation was found to be associated with proliferation of quasiparticles from the $π$-band of MgB$_2$. The result shows that the vortex fluctuations are enhanced by two-band superconductivity in MgB$_2$ and we suggest that the vortex quantum fluctuation is a possible cause of the non-vanishing zero-temperature dissipation.
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Submitted 23 March, 2007;
originally announced March 2007.
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Systematic study of disorder induced by neutron irradiation in MgB2 thin films
Authors:
V. Ferrando,
I. Pallecchi,
C. Tarantini,
D. Marre,
M. Putti,
F. Gatti,
H. U. Aebersold,
E. Lehmann,
E. Haanappel,
I. Sheikin,
X. X. Xi,
P. Orgiani,
C. Ferdeghini
Abstract:
The effects of neutron irradiation on normal state and superconducting properties of epitaxial magnesium diboride thin films are studied up to fluences of 1020 cm-2. All the properties of the films change systematically upon irradiation. Critical temperature is suppressed and, at the highest fluence, no superconducting transition is observed down to 1.8 K. Residual resistivity progressively incr…
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The effects of neutron irradiation on normal state and superconducting properties of epitaxial magnesium diboride thin films are studied up to fluences of 1020 cm-2. All the properties of the films change systematically upon irradiation. Critical temperature is suppressed and, at the highest fluence, no superconducting transition is observed down to 1.8 K. Residual resistivity progressively increases from 1 to 190 microohmcm; c axis expands and then saturates at the highest damage level. We discuss the mechanism of damage through the comparison with other damage procedures. The normal state magnetoresistivity of selected samples measured up to high fields (28 and 45T) allows to determine unambiguously the scattering rates in each band; the crossover between the clean and dirty limit in each sample can be monitored. This set of samples, with controlled amount of disorder, is suitable to study the puzzling problem of critical field in magnesium diboride thin films. The measured critical field values are extremely high (of the order of 50T in the parallel direction at low fluences) and turns out to be rather independent on the experimental resistivity, at least at low fluences. A simple model to explain this phenomenology is presented.
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Submitted 20 September, 2006; v1 submitted 31 August, 2006;
originally announced August 2006.
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Role of interband scattering in neutron irradiated MgB$_2$ thin films by Scanning Tunneling Spectroscopy measurements
Authors:
R. Di Capua,
H. U. Aebersold,
C. Ferdeghini,
V. Ferrando,
P. Orgiani,
M. Putti,
M. Salluzzo,
R. Vaglio,
X. X. Xi
Abstract:
A series of MgB$_2$ thin films systematically disordered by neutron irradiation have been studied by Scanning Tunneling Spectroscopy. The c-axis orientation of the films allowed a reliable determination of local density of state of the $π$ band. With increasing disorder, the conductance peak moves towards higher voltages and becomes lower and broader, indicating a monotonic increase of the $π$ g…
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A series of MgB$_2$ thin films systematically disordered by neutron irradiation have been studied by Scanning Tunneling Spectroscopy. The c-axis orientation of the films allowed a reliable determination of local density of state of the $π$ band. With increasing disorder, the conductance peak moves towards higher voltages and becomes lower and broader, indicating a monotonic increase of the $π$ gap and of the broadening parameter. These results are discussed in the frame of two-band superconductivity.
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Submitted 23 June, 2006;
originally announced June 2006.
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Intrinsic nonlinearity probed by intermodulation distortion microwave measurements on high quality MgB2 thin films
Authors:
G. Cifariello,
M. Aurino,
E. Di Gennaro,
G. Lamura,
A. Andreone,
P. Orgiani,
X. X. Xi,
J. -C. Villegier
Abstract:
The two tone intermodulation distortion arising in MgB2 thin films synthesized by hybrid physical-chemical vapour deposition is studied in order to probe the influence of the two bands on the nonlinear response of this superconductor. The measurements are carried out by using a dielectrically loaded copper cavity operating at 7 GHz. Microwave data on samples having critical temperatures above 41…
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The two tone intermodulation distortion arising in MgB2 thin films synthesized by hybrid physical-chemical vapour deposition is studied in order to probe the influence of the two bands on the nonlinear response of this superconductor. The measurements are carried out by using a dielectrically loaded copper cavity operating at 7 GHz. Microwave data on samples having critical temperatures above 41 K, very low resistivity values, and residual resistivity ratio larger than 10, are shown. The dependence of the nonlinear surface losses and of the third order intermodulation products on the power feeding the cavity and on the temperature is analyzed. At low power, the signal arising from distortion versus temperature shows the intrinsic s-wave behavior expected for this compound. Data are compared with measurements performed on Nb and YBCO thin films using the same technique.
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Submitted 14 February, 2006;
originally announced February 2006.
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Magnetoresistivity in MgB2 as a probe of disorder in p- and s-bands
Authors:
I. Pallecchi,
V. Ferrando,
E. Galleani D'Agliano,
D. Marre',
M. Monni,
M. Putti,
C. Tarantini,
F. Gatti,
H. U. Aebersold,
E. Lehmann,
X. X. Xi,
E. G. Haanappel,
C. Ferdeghini
Abstract:
In this paper we present normal state magnetoresistivity data of magnesium diboride epitaxial thin films with different levels of disorder, measured at 42K in magnetic fields up to 45 Tesla. Disorder was introduced in a controlled way either by means of neutron irradiation or by carbon doping. From a quantitative analysis of the magnetoresistivity curves with the magnetic field either parallel o…
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In this paper we present normal state magnetoresistivity data of magnesium diboride epitaxial thin films with different levels of disorder, measured at 42K in magnetic fields up to 45 Tesla. Disorder was introduced in a controlled way either by means of neutron irradiation or by carbon doping. From a quantitative analysis of the magnetoresistivity curves with the magnetic field either parallel or perpendicular to the plane of the film, we extract the ratio of the scattering times in p- and s-bands. We demonstrate that the undoped unirradiated thin film has p scattering times smaller than s ones; upon irradiation, both bands become increasingly more disordered; eventually the highly irradiated sample (neutron fluence 7.7X1017 cm-2) and the C-doped sample have comparable scattering times in the two types of bands. This description of the effect of disorder in the two kinds of bands on transport is consistent with the residual resistivity values and with the temperature dependence of the resistivity.
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Submitted 22 August, 2005;
originally announced August 2005.
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Structural and transport properties of epitaxial NaxCoO2 thin films
Authors:
A. Venimadhav,
A. Soukiassian,
D. A. Tenne,
Qi Li,
X. X. Xi,
D. G. Schlom,
R. Arroyave,
Z. K. Liu,
H. P. Sun,
Xiaoqing Pan,
Minhyea Lee,
N. P. Ong
Abstract:
We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films…
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We have studied structural and transport properties of epitaxial NaxCoO2 thin films on (0001) sapphire substrate prepared by topotaxially converting an epitaxial Co3O4 film to NaxCoO2 with annealing in Na vapor. The films are c axis oriented and in-plane aligned with [10 1 0] NaxCoO2 rotated by 30 degrees from [10 1 0] sapphire. Different Na vapor pressures during the annealing resulted in films with different Na concentrations, which showed distinct transport properties.
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Submitted 10 May, 2005;
originally announced May 2005.
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Effect of damage by 2-MeV He ions and annealing on Hc2 in MgB2 thin films
Authors:
R. Gandikota,
R. K. Singh,
J. Kim,
B. Wilkens,
N. Newman,
J. M. Rowell,
A. V. Pogrebnyakov,
X. X. Xi,
J. M. Redwing,
S. Y. Xu,
Qi Li,
B. H. Moeckly
Abstract:
The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2…
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The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2(0) depends roughly linearly on Tc, while the anisotropy of Hc2(0) decreases as Tc decreases. Annealing the films reproduces the Tc vs. residual resistivity dependence but not the Hc2(0) values induced by damage.
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Submitted 31 March, 2005;
originally announced March 2005.
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Electron diffusivities in MgB2 from point contact spectroscopy
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
A. V. Pogrebnyakov,
X. X. Xi
Abstract:
We demonstrate that the variation of the Andreev reflection with applied magnetic field provides a direct means of comparing the properties of MgB2 with the theory for a dirty two-band superconductor, and we find good agreement between the two. The ratio of electron diffusivities in the s and p bands can be inferred from this experiment. We find that the field dependence of the density of states…
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We demonstrate that the variation of the Andreev reflection with applied magnetic field provides a direct means of comparing the properties of MgB2 with the theory for a dirty two-band superconductor, and we find good agreement between the two. The ratio of electron diffusivities in the s and p bands can be inferred from this experiment. We find that the field dependence of the density of states at the Fermi level in the p band is independent of the field direction, and that the anisotropic upper critical field is determined by the anisotropic diffusivity in the s band.
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Submitted 5 February, 2005;
originally announced February 2005.
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Upper Critical Fields up to 60T in Dirty Magnesium Diboride Thin Films
Authors:
C. Ferdeghini,
V. Ferrando,
C. Tarantini,
E. Bellingeri,
G. Grasso,
A. Malagoli,
D. Marre',
M. Putti,
P. Manfrinetti,
A. Pogrebnyakov,
J. M. Redwing,
X. X. Xi,
R. Felici,
E. Haanappel
Abstract:
Upper critical fields of several magnesium diboride thin films were measured up to 28 T at the Grenoble High Magnetic Field Laboratory (GHMFL) in Grenoble and up to 60 T at the Laboratoire National des Champs Magnetiques Pulses (LNCMP) in Toulouse. The samples were prepared both by pulsed laser deposition (PLD) and hybrid physical chemical vapour deposition (HPCVD) technique; they have critical…
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Upper critical fields of several magnesium diboride thin films were measured up to 28 T at the Grenoble High Magnetic Field Laboratory (GHMFL) in Grenoble and up to 60 T at the Laboratoire National des Champs Magnetiques Pulses (LNCMP) in Toulouse. The samples were prepared both by pulsed laser deposition (PLD) and hybrid physical chemical vapour deposition (HPCVD) technique; they have critical temperatures between 29 and 39 K and normal state resistivities between 5 and 250 μohmcm; one of them has been intentionally doped with carbon. The measured critical fields were exceptionally high; we obtained the record value of 52 T at 4.2 K in the parallel orientation. In contrast with the BCS predictions, no saturation in Hc2 at low temperature was observed. Furthermore, films with a wide range of resistivity values showed similar critical fields, suggesting that in a two band system resistivity and Hc2 are not trivially linked. The high Hc2 values seem to be related with the expanded c-axis. The structure of one of the samples was carefully investigated with X-ray diffraction at European Synchrotron Radiation Facility (ESRF) in Grenoble.
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Submitted 16 November, 2004;
originally announced November 2004.
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Effect of damage by 2-MeV He ions on the normal and superconducting properties of magnesium diboride
Authors:
R. Gandikota,
R. K. Singh,
J. Kim,
B. Wilkens,
N. Newman,
J. M. Rowell,
A. V. Pogrebnyakov,
X. X. Xi,
J. M. Redwing,
S. Y. Xu,
Qi Li
Abstract:
We have studied the effect of damage induced by 2-MeV alpha particles on the critical temperature, Tc, and resistivity of MgB2 thin films. This technique allows defects to be controllably introduced into MgB2 in small successive steps. Tc decreases linearly as the intragrain resistivity at 40 K increases, while the intergrain connectivity is not changed. Tc is ultimately reduced to less than 7 K…
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We have studied the effect of damage induced by 2-MeV alpha particles on the critical temperature, Tc, and resistivity of MgB2 thin films. This technique allows defects to be controllably introduced into MgB2 in small successive steps. Tc decreases linearly as the intragrain resistivity at 40 K increases, while the intergrain connectivity is not changed. Tc is ultimately reduced to less than 7 K and we see no evidence for a saturation of Tc at about 20 K, contrary to the predictions of the Tc of MgB2 in the dirty limit of interband scattering.
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Submitted 26 October, 2004; v1 submitted 25 October, 2004;
originally announced October 2004.
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Electron scattering dependence of dendritic magnetic instability in superconducting MgB2 films
Authors:
Z. X. Ye,
Qiang Li,
Y. F. Hu,
A. V. Pogrebnyakov,
Y. Cui,
X. X. Xi,
J. M. Redwing,
Qi Li
Abstract:
Magnetic instability in both ultra-pure and carbon-doped MgB2 films is investigated by magneto-optical imaging, transport and bulk magnetization measurements. In the carbon-doped MgB2 thin film, familiar dendritic flux-jump patterns were observed at low temperature as reported in previous experiments. In the ultra-pure MgB2 thin film, however, a remarkably stable flux penetration was observed, c…
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Magnetic instability in both ultra-pure and carbon-doped MgB2 films is investigated by magneto-optical imaging, transport and bulk magnetization measurements. In the carbon-doped MgB2 thin film, familiar dendritic flux-jump patterns were observed at low temperature as reported in previous experiments. In the ultra-pure MgB2 thin film, however, a remarkably stable flux penetration was observed, clearly showing the classic behavior of the critical state model. Such different behavior indicates that the electron scattering ultimately controls the magnetic stability of MgB2 films.
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Submitted 13 October, 2004;
originally announced October 2004.
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Properties of MgB2 thin films with carbon doping
Authors:
A. V. Pogrebnyakov,
X. X. Xi,
J. M. Redwing,
V. Vaithyanathan,
D. G. Schlom,
A. Soukiassian,
S. B. Mi,
C. L. Jia,
C. B. Eom,
J. Chen,
Y. F. Hu,
Y. Cui,
Q. Li
Abstract:
We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon doping. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical…
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We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon doping. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical field increases dramatically as compared to the clean films. The self-field Jc in the carbon-doped films is lower than that in the clean films, but Jc remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon doping approach can be used to produce MgB2 materials for high magnetic field applications.
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Submitted 6 July, 2004;
originally announced July 2004.
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Structural phase transitions in epitaxial perovskite films
Authors:
Feizhou He,
B. O. Wells,
Z. -G. Ban,
S. P. Alpay,
S. Grenier,
S. M. Shapiro,
Weidong Si,
A. Clark,
X. X. Xi
Abstract:
Three different film systems have been systematically investigated to understand the effects of strain and substrate constraint on the phase transitions of perovskite films. In SrTiO$_3$ films, the phase transition temperature T$_C$ was determined by monitoring the superlattice peaks associated with rotations of TiO$_6$ octahedra. It is found that T$_C$ depends on both SrTiO$_3$ film thickness a…
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Three different film systems have been systematically investigated to understand the effects of strain and substrate constraint on the phase transitions of perovskite films. In SrTiO$_3$ films, the phase transition temperature T$_C$ was determined by monitoring the superlattice peaks associated with rotations of TiO$_6$ octahedra. It is found that T$_C$ depends on both SrTiO$_3$ film thickness and SrRuO$_3$ buffer layer thickness. However, lattice parameter measurements showed no sign of the phase transitions, indicating that the tetragonality of the SrTiO$_3$ unit cells was no longer a good order parameter. This signals a change in the nature of this phase transition, the internal degree of freedom is decoupled from the external degree of freedom. The phase transitions occur even without lattice relaxation through domain formation. In NdNiO$_3$ thin films, it is found that the in-plane lattice parameters were clamped by the substrate, while out-of-plane lattice constant varied to accommodate the volume change across the phase transition. This shows that substrate constraint is an important parameter for epitaxial film systems, and is responsible for the suppression of external structural change in SrTiO$_3$ and NdNiO$_3$ films. However, in SrRuO$_3$ films we observed domain formation at elevated temperature through x-ray reciprocal space mapping. This indicated that internal strain energy within films also played an important role, and may dominate in some film systems. The final strain states within epitaxial films were the result of competition between multiple mechanisms and may not be described by a single parameter.
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Submitted 6 July, 2004;
originally announced July 2004.
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Correlation of microwave surface impedance of MgB_2 thin film with material parameters and a temperature niche for microwave applications
Authors:
B. B. Jin,
T. Dahm,
C. Iniotakis,
A. I. Gubin,
Eun-Mi Choi,
Hyun Jung Kim,
Sung-Ik Lee,
W. N. Kang,
S. F. Wang,
Y. L. Zhou,
A. V. Pogrebnyakov,
J. M. Redwing,
X. X. Xi,
N. Klein
Abstract:
Two issues related to the microwave surface impedance Z_s of MgB_2 thin film are discussed in this Letter, both being significant for potential microwave applications. At first, a correlation between Zs and Alpha = Xi/l was found, where Xi is the coherence length, and l is the mean free path. The surface resistance Rs decreases with Alpha at moderate and large values of Alpha and saturates when…
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Two issues related to the microwave surface impedance Z_s of MgB_2 thin film are discussed in this Letter, both being significant for potential microwave applications. At first, a correlation between Zs and Alpha = Xi/l was found, where Xi is the coherence length, and l is the mean free path. The surface resistance Rs decreases with Alpha at moderate and large values of Alpha and saturates when Alpha approaches one. The values of the penetration depth at zero temperature Lamda(0) for different films could be well fitted by Lamda_L (1+Alpha)^(1/2), yielding a London penetration depth Lamda_L of 33.6 nm. The second issue is to find a temperature niche for possible microwave applications. Between 10K and 15K, our best MgB_2 films possess the lowest Rs values compared with other superconductors such as NbN, Nb3Sn and the high-temperature superconductor YBCO.
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Submitted 31 March, 2004;
originally announced March 2004.
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High-field superconductivity in alloyed MgB2 thin films
Authors:
V. Braccini,
A. Gurevich,
J. E. Giencke,
M. C. Jewell,
C. B. Eom,
D. C. Larbalestier,
A. Pogrebnyakov,
Y. Cui,
B. T. Liu,
Y. F. Hu,
J. M. Redwing,
Qi Li,
X. X. Xi,
R. K. Singh,
R. Gandikota,
J. Kim,
B. Wilkens,
N. Newman,
J. Rowell,
B. Moeckly,
V. Ferrando,
C. Tarantini,
D. Marre,
M. Putti,
C. Ferdeghini
, et al. (2 additional authors not shown)
Abstract:
We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{\perp}(4.2) \simeq 35T$ and $H_{c2}\|(4.2) \simeq 51T$ were observed perpend…
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We investigated the effect of alloying on the upper critical field $H_{c2}$ in 12 $MgB_2$ films, in which disorder was introduced by growth, carbon doping or He-ion irradiation, finding a significant $H_{c2}$ enhancement in C-alloyed films, and an anomalous upward curvature of $H_{c2}(T)$. Record high values of $H_{c2}^{\perp}(4.2) \simeq 35T$ and $H_{c2}\|(4.2) \simeq 51T$ were observed perpendicular and parallel to the ab plane, respectively. The temperature dependence of $H_{c2}(T)$ is described well by a theory of dirty two-gap superconductivity. Extrapolation of the experimental data to T=0 suggests that $H_{c2}\|(0)$ approaches the paramagnetic limit of $\sim 70T$.
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Submitted 30 January, 2004;
originally announced February 2004.
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Superconducting gap structure and pinning in disordered MgB2 films
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
H. Y. Zhai,
H. M. Christen,
A. V. Pogrebnyakov,
X. X. Xi,
O. V. Dolgov
Abstract:
We have performed a comparative study of two thin films of magnesium diboride (MgB2) grown by different techniques. The critical current density at different temperatures and magnetic fields was evaluated from magnetisation curves, the structure of superconducting order parameter was obtained from point-contact spectroscopy, and the scattering rates were evaluated by fitting the temperature depe…
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We have performed a comparative study of two thin films of magnesium diboride (MgB2) grown by different techniques. The critical current density at different temperatures and magnetic fields was evaluated from magnetisation curves, the structure of superconducting order parameter was obtained from point-contact spectroscopy, and the scattering rates were evaluated by fitting the temperature dependent normal-state resistivity to the two-band model. The films have similar critical temperatures close to 39 K, but the upper critical fields were different by a factor of 2 (5.2T and 2.5 T at 20 K). We have found that the film with higher Hc2 also had stronger scattering in the sigma band and smaller value of the superconducting gap in this band. As the scattering in sigma band is primarily due to the defects in boron plane, our results are consistent with the assumption that disordering the boron planes leads to enhanced Hc2 and better pinning properties in magnetic field.
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Submitted 25 September, 2003;
originally announced September 2003.
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The effect of magnetic field on the two superconducting gaps in MgB2
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
A. V. Pogrebnyakov,
X. X. Xi
Abstract:
Double-gap superconductivity in an epitaxial MgB2 film has been studied by means of point-contact spectroscopy in magnetic field up to 8 Tesla. The relatively fast disappearance of the feature associated with the pi-band gap at a field around 1 T is caused by the line broadening due to strong pair breaking rather than to a collapse of the double-gap state. This pair breaking was found to increas…
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Double-gap superconductivity in an epitaxial MgB2 film has been studied by means of point-contact spectroscopy in magnetic field up to 8 Tesla. The relatively fast disappearance of the feature associated with the pi-band gap at a field around 1 T is caused by the line broadening due to strong pair breaking rather than to a collapse of the double-gap state. This pair breaking was found to increase linearly with field. Field dependences of the order parameters Delta_pi and Delta_sigma in the pi and sigma bands were measured in field applied parallel and perpendicular to the film, at T = 4.2 K. In perpendicular field, both order parameters survive to a common Hc2, which is about 6.5 T for this direction. In parallel field, the decrease of Delta_sigma is much more gradual, consistent with the Hc2 being about 4 times greater in this ori-entation. The difference in Delta_pi measured in the two field orientations is however smaller than the difference of Delta_sigma. We compare these results with the data on tunnelling spectroscopy and specific heat measurements of MgB2 single crystals and find consistency between the different experimental approaches.
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Submitted 1 September, 2003; v1 submitted 22 July, 2003;
originally announced July 2003.
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Hole Doping Dependence of the Coherence Length in $La_{2-x}Sr_xCuO_4$ Thin Films
Authors:
H. H. Wen,
H. P. Yang,
S. L. Li,
X. H. Zeng,
A. A. Soukiassian,
W. D. Si,
X. X. Xi
Abstract:
By measuring the field and temperature dependence of magnetization on systematically doped $La_{2-x}Sr_xCuO_4$ thin films, the critical current density $j_c(0)$ and the collective pinning energy $U_p(0)$ are determined in single vortex creep regime. Together with the published data of superfluid density, condensation energy and anisotropy, for the first time we derive the doping dependence of th…
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By measuring the field and temperature dependence of magnetization on systematically doped $La_{2-x}Sr_xCuO_4$ thin films, the critical current density $j_c(0)$ and the collective pinning energy $U_p(0)$ are determined in single vortex creep regime. Together with the published data of superfluid density, condensation energy and anisotropy, for the first time we derive the doping dependence of the coherence length or vortex core size in wide doping regime directly from the low temperature data. It is found that the coherence length drops in the underdoped region and increases in the overdoped side with the increase of hole concentration. The result in underdoped region clearly deviates from what expected by the pre-formed pairing model if one simply associates the pseudogap with the upper-critical field.
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Submitted 13 May, 2003; v1 submitted 12 May, 2003;
originally announced May 2003.
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Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition
Authors:
A. V. Pogrebnyakov,
J. M. Redwing,
J. E. Jones,
X. X. Xi,
S. Y. Xu,
Q. Li,
V. Vaithyanathan,
D. G. Schlom
Abstract:
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thi…
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We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.
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Submitted 7 April, 2003;
originally announced April 2003.
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Anomalous Phase Transition in Strained SrTiO$_3$ Thin Films
Authors:
Feizhou He,
B. O. Wells,
S. M. Shapiro,
M. v. Zimmermann,
A. Clark,
X. X. Xi
Abstract:
We have studied the cubic to tetragonal phase transition in epitaxial SrTiO$_3$ films under various biaxial strain conditions using synchrotron X-ray diffraction. Measuring the superlattice peak associated with TiO$_6$ octahedra rotation in the low temperature tetragonal phase indicates the presence of a phase transition whose critical temperature is a strong function of strain, with T$_C$ as mu…
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We have studied the cubic to tetragonal phase transition in epitaxial SrTiO$_3$ films under various biaxial strain conditions using synchrotron X-ray diffraction. Measuring the superlattice peak associated with TiO$_6$ octahedra rotation in the low temperature tetragonal phase indicates the presence of a phase transition whose critical temperature is a strong function of strain, with T$_C$ as much as 50K above the corresponding bulk temperature. Surprisingly, the lattice constants evolve smoothly through the transition with no indication of a phase change. This signals an important change in the nature of the phase transition due to the epitaxy strain and substrate clamping effect. The internal degrees of freedom (TiO$_6$ rotations) have become uncoupled from the overall lattice shape.
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Submitted 17 March, 2003;
originally announced March 2003.
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Critical Current Density and Resistivity of MgB2 Films
Authors:
J. M. Rowell,
S. Y. Xu,
X. H. Zeng,
A. V. Pogrebnyakov,
Q. Li,
X. X. Xi,
J. M. Redwing,
W. Tian,
X. Pan
Abstract:
The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a co…
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The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the "reduced effective area" argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.
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Submitted 3 February, 2003;
originally announced February 2003.
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The superconducting gap of \QTR{em}{in situ} $MgB_{2}$ thin films by microwave surface impedance measurements
Authors:
N. Hakim,
C. Kusko,
S. Sridhar,
A. Soukiassian,
X. H. Zeng,
X. X. Xi,
.
Abstract:
Precision measurements of the microwave surface resistance $R_{s}$ of in situ $MgB_{2}$ films directly reveal an exponential behavior of $R_{s}$ at low temperature indicating a fully-gapped order parameter. The entire temperature dependence of $R_{s}$ is well described by a Mattis-Bardeen formalism but with a small gap ratio of $Δ(0)/kT_{c}=0.72$, corresponding to $Δ(0)=1.9meV$.
Precision measurements of the microwave surface resistance $R_{s}$ of in situ $MgB_{2}$ films directly reveal an exponential behavior of $R_{s}$ at low temperature indicating a fully-gapped order parameter. The entire temperature dependence of $R_{s}$ is well described by a Mattis-Bardeen formalism but with a small gap ratio of $Δ(0)/kT_{c}=0.72$, corresponding to $Δ(0)=1.9meV$.
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Submitted 30 November, 2002;
originally announced December 2002.
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CVD-based approach to the growth of epitaxial MgB2 thin films
Authors:
A. V. Pogrebnyakov,
X. H. Zheng,
A. Kotcharov,
J. E. Jones,
X. X. Xi,
E. M. Lysczek,
J. Redwing,
S. Y. Xu,
Q. Li,
J. Lettiery,
D. G. Schlom,
J. Schallenberger,
Z. K. Liu,
W. Tian,
X. Q. Pan
Abstract:
The paper has been withdrawn
The paper has been withdrawn
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Submitted 9 April, 2002; v1 submitted 6 April, 2002;
originally announced April 2002.
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In situ epitaxial MgB2 thin films for superconducting electronics
Authors:
X. H. Zeng,
A. V. Pogrebnyakov,
A. Kotcharov,
J. E. Jones,
X. X. Xi,
E. M. Lysczek,
J. M. Redwing,
S. Y. Xu,
Qi Li,
J. Lettieri,
D. G. Schlom,
W. Tian,
X. Q. Pan,
Z. K. Liu
Abstract:
A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ}…
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A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$.
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Submitted 27 March, 2002;
originally announced March 2002.
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Superconducting properties of nanocrystalline MgB$_2$ thin films made by an in situ annealing process
Authors:
X. H. Zeng,
A. Sukiasyan,
X. X. Xi,
Y. F. Hu,
E. Wertz,
Qi Li,
W. Tian,
H. P. Sun,
X. Q. Pan,
J. Lettieri,
D. G. Schlom,
C. O. Brubaker,
Zi-Kui Liu,
Qiang Li
Abstract:
We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of textured MgO and MgB$_2$ with very small grain sizes. A zero-resistance transition temperature ($T_{c0}$) of 34 K and a zero-field critical current density (…
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We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of textured MgO and MgB$_2$ with very small grain sizes. A zero-resistance transition temperature ($T_{c0}$) of 34 K and a zero-field critical current density ($J_c$) of $1.3 \times 10^6$ A/cm$^2$ were obtained. The irreversibility field was $\sim$ 8 T at low temperatures, although severe pinning instability was observed. These bulk-like superconducting properties show that the in situ deposition process can be a viable candidate for MgB$_2$ Josephson junction technologies.
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Submitted 3 May, 2001;
originally announced May 2001.
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Thermodynamics of the Mg-B system: Implications for the deposition of MgB2 thin films
Authors:
Zi-Kui Liu,
D. G. Schlom,
Qi Li,
X. X. Xi
Abstract:
We have studied thermodynamics of the Mg-B system with the modeling technique CALPHAD using a computerized optimization procedure. Temperature-composition, pressure-composition, and pressure-temperature phase diagrams under different conditions are obtained. The results provide helpful insights into appropriate processing conditions for thin films of the superconducting phase, MgB2, including th…
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We have studied thermodynamics of the Mg-B system with the modeling technique CALPHAD using a computerized optimization procedure. Temperature-composition, pressure-composition, and pressure-temperature phase diagrams under different conditions are obtained. The results provide helpful insights into appropriate processing conditions for thin films of the superconducting phase, MgB2, including the identification of the pressure/temperature region for adsorption-controlled growth. Due to the high volatility of Mg, MgB2 is thermodynamically stable only under fairly high Mg overpressures for likely growth temperatures. This constraint places severe temperature constraints on deposition techniques employing high vacuum conditions.
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Submitted 16 March, 2001;
originally announced March 2001.