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Evidence of the matrix effect on a compositionally graded oxide thin film
Authors:
J. Scola,
F. Jomard,
E. Loire,
J. Wolfman,
B. Negulescu,
G. Z. Liu,
M. -A. Pinault-Thaury
Abstract:
A heterostructure of Ba$_{1-x}$Sr$_x$TiO$_3$/La$_{1.1}$Sr$_{0.9}$NiO$_3$ /SrTiO$_3$ has been analysed by magnetic sector secondary ion mass spectrometry (SIMS). The stoichiometry parameter $x$ of the top layer was made varying continuously from 0 to 1 along the width of the sample by combinatorial pulsed laser deposition. Prior to SIMS analysis, the composition gradient of Ba$_{1-x}$Sr$_x$TiO$_3$…
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A heterostructure of Ba$_{1-x}$Sr$_x$TiO$_3$/La$_{1.1}$Sr$_{0.9}$NiO$_3$ /SrTiO$_3$ has been analysed by magnetic sector secondary ion mass spectrometry (SIMS). The stoichiometry parameter $x$ of the top layer was made varying continuously from 0 to 1 along the width of the sample by combinatorial pulsed laser deposition. Prior to SIMS analysis, the composition gradient of Ba$_{1-x}$Sr$_x$TiO$_3$ was quantitatively characterized by chemical characterizations including wavelength and energy dispersive X-ray spectroscopies. Even if the Ti content is constant into Ba$_{1-x}$Sr$_x$TiO$_3${}, its ionic yield exhibits an increasing trend as Ba is substituted by Sr. Such a phenomenon can be explained by the variation of the neighbouring atoms chemistry which affects the ionization probability of titanium during the sputtering process. In addition to the continuously varying composition, the oxide multilayer sample features sharp interfaces hence the in-depth resolution under our analysing conditions has been investigated too. The modelling of the interface crossing profiles reveals that the instrumental contribution to the profile broadening is as low as 5 nm.
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Submitted 5 March, 2025; v1 submitted 13 February, 2025;
originally announced February 2025.
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Enhancement of piezoelectric properties in a narrow cerium doping range of $\text{Ba}_{1-x}\text{Ca}_{x}\text{Ti}_{1-y}\text{Zr}_{y}\text{O}_{3}$ evidenced by high throughput experiment
Authors:
Kevin Nadaud,
Guillaume F. Nataf,
Nazir Jaber,
Béatrice Negulescu,
Fabien Giovannelli,
Pascal Andreazza,
Pierre Birnal,
Jérôme Wolfman
Abstract:
Lead-free materials based on the $\text{(Ba,Ca)(Zr,Ti)O}_{3}$ (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a high throughput strategy to unravel the influence of aliovalent doping with Ce on dielectric and piezoelectric properties of BCTZ. We synthesize and characterize a single BCTZ thin film with a compositio…
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Lead-free materials based on the $\text{(Ba,Ca)(Zr,Ti)O}_{3}$ (BCZT) system exhibit excellent electromechanical properties that can be strongly modified by small amounts of dopants. Here, we use a high throughput strategy to unravel the influence of aliovalent doping with Ce on dielectric and piezoelectric properties of BCTZ. We synthesize and characterize a single BCTZ thin film with a composition gradient from undoped to 0.2 mol % cerium doping. The cerium doping increases the piezoelectric coefficient from $42.3\pm 2.9 \text{pm V}^{-1}$ (undoped) to $63\pm 2.4 \text{pm V}^{-1}$ for 0.06 Ce-mol\%, and then decreases to $38.4 \pm 1.3 \text{pm V}^{-1}$ for the maximum amount of cerium (0.2 mol %). An investigation of sub-coercive field non-linearities reveal that these variations are not only induced by changes in dynamics and densities of domain walls. The results highlight the advantage of high throughput techniques to identify ideal compositions for applications, without synthesizing a high number of samples with unavoidable sample-to-sample variations.
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Submitted 1 October, 2024; v1 submitted 13 July, 2024;
originally announced July 2024.
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Subcoercive-field dielectric response of $0.5(\text{Ba}_{0.7}\text{Ca}_{0.3}\text{TiO}_{3})-0.5(\text{BaZr}_{0.2}\text{Ti}_{0.8}\text{O}_{3})$ thin film: peculiar third harmonic signature of phase transitions and residual ferroelectricity
Authors:
Kevin Nadaud,
Guillaume F. Nataf,
Nazir Jaber,
Micka Bah,
Béatrice Negulescu,
Pascal Andreazza,
Pierre Birnal,
Jérôme Wolfman
Abstract:
Sub-coercive field non-linearities in $0.5(\text{Ba}_{0.7}\text{Ca}_{0.3}\text{TiO}_{3})-0.5(\text{BaZr}_{0.2}\text{Ti}_{0.8}\text{O}_{3})$ (BCTZ 50/50) thin film elaborated using pulsed laser deposition are studied using permittivity and phase angle of the third harmonic measurements as function of the AC measuring field $E_{\mathit{AC}}$ and temperature.
The global phase transition temperature…
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Sub-coercive field non-linearities in $0.5(\text{Ba}_{0.7}\text{Ca}_{0.3}\text{TiO}_{3})-0.5(\text{BaZr}_{0.2}\text{Ti}_{0.8}\text{O}_{3})$ (BCTZ 50/50) thin film elaborated using pulsed laser deposition are studied using permittivity and phase angle of the third harmonic measurements as function of the AC measuring field $E_{\mathit{AC}}$ and temperature.
The global phase transition temperature $T_{\mathit{max}}$ for which the permittivity is maximum, decreases from 330 K to 260 K when $E_{\mathit{AC}}$ increases.
Rayleigh analysis of the AC field dependence of the relative permittivity shows a regular decrease of the domain wall motion contributions as temperature increases up to $T_{\mathit{max}}$ and an even more pronounced decrease above $T_{\mathit{max}}$.
This measurement reveals that the ferroelectric behavior subsists 70 K above the global phase transition.
The phase angle of the third harmonic at temperatures below 275 K, is characteristic of a conventional ferroelectric and from 275 K to $T_{\mathit{max}}=$ 330 K of a relaxor.
Above $T_{\mathit{max}}$, the thin film exhibits a peculiar phase angle of the third harmonic, which consists of ${-180}°\rightarrow {-225}°\rightarrow {+45}° \rightarrow {0}°$ instead of the ${-180}°\rightarrow {-90}° \rightarrow {0}°$ found for relaxor.
This peculiar behavior is observed only on heating, and is tentatively attributed to changes in the correlations between polar nanoregions.
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Submitted 11 January, 2024; v1 submitted 25 October, 2023;
originally announced October 2023.
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Interface combinatorial pulsed laser deposition to enhance heterostructures functional properties
Authors:
Jerome Wolfman,
Beatrice Negulescu,
Antoine Ruyter,
Ndioba Niang,
Nazir Jaber
Abstract:
In this chapter we will describe a new development of combinatorial pulsed laser deposition (CPLD) which targets the exploration of interface libraries. The idea is to modulate continuously the composition of interfaces on a few atomic layers in order to alter their functional properties. This unique combinatorial synthesis of interfaces is possible due to very specific PLD characteristics. The fi…
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In this chapter we will describe a new development of combinatorial pulsed laser deposition (CPLD) which targets the exploration of interface libraries. The idea is to modulate continuously the composition of interfaces on a few atomic layers in order to alter their functional properties. This unique combinatorial synthesis of interfaces is possible due to very specific PLD characteristics. The first one is its well-known ability for complex oxide stoichiometry transfer from the target to the film. The second one is the layer by layer control of thin film growth at the atomic level using in-situ RHEED characterization. The third one relates to the directionality of the ablated plume which allows for selective area deposition on the substrate using a mobile shadow-mask. However PLD also has some limitations and important PLD aspects to be considered for reliable CPLD are reviewed. Multiple examples regarding the control of interface magnetism in magnetic tunnel junctions and energy band and Schottky barrier height tuning in ferroelectric tunable capacitors are presented.
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Submitted 7 December, 2020; v1 submitted 21 October, 2020;
originally announced October 2020.
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Microstructural and dielectric properties of Ba0.6Sr0.4Ti1-xZrxO3 based combinatorial thin film capacitors library
Authors:
Guozhen Liu,
Jerome Wolfman,
Cécile Autret-Lambert,
Joe Sakai,
Sylvain Roger,
Monique Gervais,
François Gervais
Abstract:
Epitaxial growth of Ba0.6Sr0.4Ti1-xZrxO3 (0/leqx\leq0.3) composition spread thin film library on SrRuO3/SrTiO3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition…
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Epitaxial growth of Ba0.6Sr0.4Ti1-xZrxO3 (0/leqx\leq0.3) composition spread thin film library on SrRuO3/SrTiO3 layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations of the dielectric properties. Doping windows with enhanced permittivity and tunability are identified, and correlated to microstructural properties.
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Submitted 28 October, 2010; v1 submitted 21 October, 2010;
originally announced October 2010.
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Frequency dependent negative capacitance of (Ba0.6Sr0.4)(ZrxTi1-x)O3 thin films grown on La0.9Sr1.1NiO4 buffered SrTiO3 substrate
Authors:
Y. K. Vayunandana Reddy,
Jerome Wolfman,
Monique Gervais,
Francois
Abstract:
Ba0.6Sr0.4TiO3 and (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were deposited on La0.9Sr1.1NiO4 buffered SrTiO3 substrates. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film (2.77 nF) showed one order large capacitance compared to that of Ba0.6Sr0.4TiO3 film (270 pF) at 100 kHz. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film showed negative capacitance at f >3 MHz except for f=5.05 to 7.36 MHz, and 10.4 to 13.4 MHz, where it showed p…
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Ba0.6Sr0.4TiO3 and (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were deposited on La0.9Sr1.1NiO4 buffered SrTiO3 substrates. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film (2.77 nF) showed one order large capacitance compared to that of Ba0.6Sr0.4TiO3 film (270 pF) at 100 kHz. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film showed negative capacitance at f >3 MHz except for f=5.05 to 7.36 MHz, and 10.4 to 13.4 MHz, where it showed positive capacitance. Tunability of the Ba0.6Sr0.4TiO3 film (~15%) is much lower than that of the (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film (30 to 65%, both normal and inverse). A significant change of the tunability was observed at frequencies f>500 kHz for the (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film showing inverse tunability, this can be attributed to the negative capacitance effect, where current lags behind the voltage. (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film (6.87x10-6 A/cm2) showing one order high leakage current density than BST film (1.32x10-7 A/cm2). Ba0.6Sr0.4TiO3 film showed large grain size (140 nm) and surface roughness (11.5 nm) and (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 film showed small grain size (80 nm) and roughness (2.3 nm).
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Submitted 16 April, 2010; v1 submitted 7 August, 2009;
originally announced August 2009.
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Electrode effects on electrical properties of polycrystalline (Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films
Authors:
Y. K. Vayunandana Reddy,
Jerome Wolfman,
Monique Gervais,
Francois Gervais
Abstract:
(Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were grown on IrO2 and Pt coated Si substrates. Film on Pt electrode showed large dielectric dispersion at lower frequency and on other hand film on IrO2 showed dielectric constant almost independent with frequency up to 1 MHz. Tunability (Loss) on Pt and IrO2 at 1 MHz were 55% (0.159) and 45% (0.07), respectively. The FOM is also high for film on IrO2 (620)…
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(Ba0.6Sr0.4)(Zr0.3Ti0.7)O3 thin films were grown on IrO2 and Pt coated Si substrates. Film on Pt electrode showed large dielectric dispersion at lower frequency and on other hand film on IrO2 showed dielectric constant almost independent with frequency up to 1 MHz. Tunability (Loss) on Pt and IrO2 at 1 MHz were 55% (0.159) and 45% (0.07), respectively. The FOM is also high for film on IrO2 (620) compared on to the Pt (345). Very low leakage current density also obtained on IrO2 (1.3 x 10-6 A/cm2) compared to Pt (6.14x10-3 A/cm2) coated Si substrates.
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Submitted 16 April, 2010; v1 submitted 5 August, 2009;
originally announced August 2009.
