-
New three-dimensional dispersion in the type-II Dirac semimetals PtTe$_2$ and PdTe$_2$ revealed through Angle Resolved Photoemission Spectroscopy
Authors:
Ivan Pelayo,
Derek Bergner,
Archibald J. Williams,
Jiayuwen Qi,
Penghao Zhu,
Mahfuzun Nabi,
Warren L. B. Huey,
Luca Moreschini,
Ziling Deng,
Jonathan Denlinger,
Alessandra Lanzara,
Yuan-Ming Lu,
Wolfgang Windl,
Joshua Goldberger,
Claudia Ojeda-Aristizabal
Abstract:
PtTe$_2$ and PdTe$_2$ are among the first transition metal dichalcogenides that were predicted to host type-II Dirac fermions, exotic particles prohibited in free space. These materials are layered and air-stable, which makes them top candidates for technological applications that take advantage of their anisotropic magnetotransport properties. Here, we provide a detailed characterization of the e…
▽ More
PtTe$_2$ and PdTe$_2$ are among the first transition metal dichalcogenides that were predicted to host type-II Dirac fermions, exotic particles prohibited in free space. These materials are layered and air-stable, which makes them top candidates for technological applications that take advantage of their anisotropic magnetotransport properties. Here, we provide a detailed characterization of the electronic structure of PtTe$_2$ and PdTe$_2$ using Angle Resolved Photoemission Spectroscopy (ARPES) and Density Functional Theory (DFT) calculations, unveiling a new three-dimensional dispersion in these materials. Through the use of circularly polarized light, we report a different behavior of such dispersion in PdTe$_2$ compared to PtTe$_2$, that we relate to a symmetry analysis of the dipole matrix element. Such analysis reveals a link between the observed circular dichroism and the different momentum-dependent terms in the dispersion of these two compounds, despite their close similarity in crystal structure. Additionally, our data shows a clear difference in the circular dichroic signal for the type-II Dirac cones characteristic of these materials, compared to their topologically protected surface states. Our work provides a useful reference for the ARPES characterization of other transition metal dichalcogenides with topological properties and illustrates the use of circular dichroism as a guide to identify the topological character of two otherwise equivalent band dispersions, and to recognize different attributes in the band structure of similar materials.
△ Less
Submitted 16 May, 2024; v1 submitted 23 December, 2023;
originally announced December 2023.
-
Unexpected Field Evaporation Sequence in $γ$-TiAl
Authors:
Jiayuwen Qi,
Fei Xue,
Emmanuelle Marquis,
Wolfgang Windl
Abstract:
In atom probe tomography (APT), atoms from the surface of a needle shape specimen are evaporated under a high electric field and analyzed via time of flight mass spectrometry and position sensitive detection. 3D reconstruction of the atom positions follows a simple projection law, which can sometimes lead to artifacts due to deviation from an assumed ideal evaporation sequence. Here, we revisit th…
▽ More
In atom probe tomography (APT), atoms from the surface of a needle shape specimen are evaporated under a high electric field and analyzed via time of flight mass spectrometry and position sensitive detection. 3D reconstruction of the atom positions follows a simple projection law, which can sometimes lead to artifacts due to deviation from an assumed ideal evaporation sequence. Here, we revisit the evaporation behavior of [001]-oriented $γ$-TiAl using a full-dynamics simulation approach empowered by molecular dynamics. Without any knowledge of charge states or assumptions about evaporation fields, we successfully reproduced the lack of distinct Al and Ti layers observed in reconstructions of experimental data which is traditionally attributed to the retention of Al on the evaporating surface. We further showed that a step-wise bond breaking process of Ti in contrast to the simultaneous bond breaking of Al explains the seemingly counterintuitive preferential evaporation of the strongly bonded Ti atoms.
△ Less
Submitted 26 November, 2023;
originally announced November 2023.
-
Origin of Enhanced Zone Lines in Field Desorption Maps
Authors:
Jiayuwen Qi,
Christian Oberdorfer,
Emmanuelle A. Marquis,
Wolfgang Windl
Abstract:
Artifacts in the collective desorption map of the detector hits impede a truthful reconstruction, including enhanced "zone lines" with high atomic impact intensity. Since APT is destructive, simulation is the only approach to explain the origin of these zone lines, but previous work couldn't reproduce them. Here, we use a new simulation technique that adds the full electrostatic forces to the inte…
▽ More
Artifacts in the collective desorption map of the detector hits impede a truthful reconstruction, including enhanced "zone lines" with high atomic impact intensity. Since APT is destructive, simulation is the only approach to explain the origin of these zone lines, but previous work couldn't reproduce them. Here, we use a new simulation technique that adds the full electrostatic forces to the interatomic forces in a molecular-dynamics simulation and eliminates the previous ad-hoc assumptions. We find for the canonical example of tungsten that evaporation happens when the electrostatic force overpowers the interatomic force, and the misalignment of the two forces deviates the launch direction of the atoms in certain zones, giving rise to an accumulation of hit events around zone lines.
△ Less
Submitted 13 September, 2022;
originally announced September 2022.
-
Bayesian calibration of interatomic potentials for binary alloys
Authors:
Arun Hegde,
Elan Weiss,
Wolfgang Windl,
Habib N. Najm,
Cosmin Safta
Abstract:
Developing reliable interatomic potential models with quantified predictive accuracy is crucial for atomistic simulations. Commonly used potentials, such as those constructed through the embedded atom method (EAM), are derived from semi-empirical considerations and contain unknown parameters that must be fitted based on training data. In the present work, we investigate Bayesian calibration as a m…
▽ More
Developing reliable interatomic potential models with quantified predictive accuracy is crucial for atomistic simulations. Commonly used potentials, such as those constructed through the embedded atom method (EAM), are derived from semi-empirical considerations and contain unknown parameters that must be fitted based on training data. In the present work, we investigate Bayesian calibration as a means of fitting EAM potentials for binary alloys. The Bayesian setting naturally assimilates probabilistic assertions about uncertain quantities. In this way, uncertainties about model parameters and model errors can be updated by conditioning on the training data and then carried through to prediction. We apply these techniques to investigate an EAM potential for a family of gold-copper systems in which the training data correspond to density-functional theory values for lattice parameters, mixing enthalpies, and various elastic constants. Through the use of predictive distributions, we demonstrate the limitations of the potential and highlight the importance of statistical formulations for model error.
△ Less
Submitted 3 August, 2022;
originally announced August 2022.
-
Rapid Production of Accurate Embedded-Atom Method Potentials for Metal Alloys
Authors:
Elan J. Weiss,
Logan Ward,
Christian Oberdorfer,
Travis Withrow,
David C. Riegner,
Anupriya Agrawal,
Wolfgang Windl
Abstract:
A critical limitation to the wide-scale use of classical molecular dynamics for alloy design is the limited availability of suitable interatomic potentials. Here, we introduce the Rapid Alloy Method for Producing Accurate General Empirical Potentials or RAMPAGE, a computationally economical procedure to generate binary embedded-atom model potentials from already-existing single-element potentials…
▽ More
A critical limitation to the wide-scale use of classical molecular dynamics for alloy design is the limited availability of suitable interatomic potentials. Here, we introduce the Rapid Alloy Method for Producing Accurate General Empirical Potentials or RAMPAGE, a computationally economical procedure to generate binary embedded-atom model potentials from already-existing single-element potentials that can be further combined into multi-component alloy potentials. We present the quality of RAMPAGE calibrated Finnis-Sinclair type EAM potentials using binary Ag-Al and ternary Ag-Au-Cu as case studies. We demonstrate that RAMPAGE potentials can reproduce bulk properties and forces with greater accuracy than that of other alloy potentials. In some simulations, it is observed the quality of the optimized cross interactions can exceed that of the original off-the-shelf elemental potential inputs.
△ Less
Submitted 3 August, 2022;
originally announced August 2022.
-
Ab-Initio Simulation of Field Evaporation
Authors:
Jiayuwen Qi,
Christian Oberdorfer,
Emmanuelle A. Marquis,
Wolfgang Windl
Abstract:
A new simulation approach of field evaporation is presented. The model combines classical electrostatics with molecular dynamics (MD) simulations. Unlike previous atomic-level simulation approaches, our method does not rely on an evaporation criterion based on thermal activation theory, instead, electric-field-induced forces on atoms are explicitly calculated and added to the interatomic forces. A…
▽ More
A new simulation approach of field evaporation is presented. The model combines classical electrostatics with molecular dynamics (MD) simulations. Unlike previous atomic-level simulation approaches, our method does not rely on an evaporation criterion based on thermal activation theory, instead, electric-field-induced forces on atoms are explicitly calculated and added to the interatomic forces. Atoms then simply move according to the laws of classical molecular dynamics and are "evaporated" when the external force overcomes interatomic bonding. This approach thus makes no ad-hoc assumptions concerning evaporation fields and criteria, which makes the simulation fully physics-based and "ab-initio" apart from the interatomic potential. As proof of principle, we perform simulations to determine material dependent critical voltages which allow assessing the evaporation fields and the corresponding steady-state tip shapes in different metals. We also extract critical evaporation fields in elemental metals and sublimation energies in a high entropy alloy to have a more direct comparison with tabulated values. In contrast to previous approaches, we show that our method is able to successfully reproduce the enhanced zone lines observed in experimental field desorption patterns. We also demonstrate the need for careful selection of the interatomic potential by a comparative study for the example of Cu-Ni alloys.
△ Less
Submitted 14 October, 2022; v1 submitted 8 July, 2022;
originally announced July 2022.
-
Non-Linear Arrhenius Behavior of Self-Diffusion in $β$-Ti and Mo
Authors:
Yaxian Wang,
Zhangqi Chen,
Wolfgang Windl,
Ji-Cheng Zhao
Abstract:
While anomalous diffusion coefficients with non-Arrhenius like temperature dependence are observed in a number of metals, a conclusive comprehensive framework of explanation has not been brought forward to date. Here, we use first-principles calculations based on density functional theory to calculate self-diffusion coefficients in the bcc metals Mo and $β$-Ti by coupling quasiharmonic transition…
▽ More
While anomalous diffusion coefficients with non-Arrhenius like temperature dependence are observed in a number of metals, a conclusive comprehensive framework of explanation has not been brought forward to date. Here, we use first-principles calculations based on density functional theory to calculate self-diffusion coefficients in the bcc metals Mo and $β$-Ti by coupling quasiharmonic transition state theory and large displacement phonon calculations and show that anharmonicity from thermal expansion is the major reason for the anomalous temperature dependence. We use a modified Debye approach to quantify the thermal expansion over the entire temperature range and introduce a method to relax the vacancy structure in a mechanically unstable crystal such as $β$-Ti. Thermal expansion is found to weakly affect the activation enthalpy but has a strong effect on the prefactor of the diffusion coefficient, reproducing the non-linear, non-Arrhenius "anomalous" self-diffusion in both bcc systems with good agreement between calculation and experiment. The proposed methodology is general and simple enough to be applicable to other mechanically unstable crystals.
△ Less
Submitted 19 October, 2021;
originally announced October 2021.
-
Layer- and Gate-tunable Spin-Orbit Coupling in a High Mobility Few-Layer Semiconductor
Authors:
D. Shcherbakov,
P. Stepanov,
S. Memaran,
Y. Wang,
Y. Xin,
J. Yang,
K. Wei,
R. Baumbach,
W. Zheng,
K. Watanabe,
T. Taniguchi,
M. Bockrath,
D. Smirnov,
T. Siegrist,
W. Windl,
L. Balicas,
C. N. Lau
Abstract:
Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate…
▽ More
Spin-orbit coupling (SOC) is a relativistic effect, where an electron moving in an electric field experiences an effective magnetic field in its rest frame. In crystals without inversion symmetry, it lifts the spin degeneracy and leads to many magnetic, spintronic and topological phenomena and applications. In bulk materials, SOC strength is a constant that cannot be modified. Here we demonstrate SOC and intrinsic spin-splitting in atomically thin InSe, which can be modified over an unprecedentedly large range. From quantum oscillations, we establish that the SOC parameter αis thickness-dependent; it can be continuously modulated over a wide range by an out-of-plane electric field, achieving intrinsic spin splitting tunable between 0 and 20 meV. Surprisingly, αcould be enhanced by an order of magnitude in some devices, suggesting that SOC can be further manipulated. Our work highlights the extraordinary tunability of SOC in 2D materials, which can be harnessed for in operando spintronic and topological devices and applications.
△ Less
Submitted 1 December, 2020;
originally announced December 2020.
-
Bond Synergy Model for Bond Energies in Alloy Oxides
Authors:
Szu-Chia Chien,
Wolfgang Windl
Abstract:
In this work we introduce a metal-oxide bond-energy model for alloy oxides based on pure-phase bond energies and bond synergy factors that describe the effect of alloying on the bond energy between cations and oxygen, an important quantity to understand formation and stability of passive films. This model is parameterized for binary cation-alloy oxides using density-functional theory energies and…
▽ More
In this work we introduce a metal-oxide bond-energy model for alloy oxides based on pure-phase bond energies and bond synergy factors that describe the effect of alloying on the bond energy between cations and oxygen, an important quantity to understand formation and stability of passive films. This model is parameterized for binary cation-alloy oxides using density-functional theory energies and is shown to be directly transferable to multi-component alloy oxides. We parameterized the model for alloy oxide energies with metal cations that form the basis of corrosion resistant alloys, including Fe, Ni, Cr, Mo, Mn, W, Co, and Ru. We find that isoelectronic solutes allow quantification of pure-phase bond energies in oxides and that the calculated bond energy values give sensible results compared to common experience, including the role of Cr as the passive-layer former in Fe-Ni-Cr alloys for corrosion applications. Additionally, the bond synergy factors give insights into the mutual strengthening and weakening effects of alloying on cation-oxygen bonds and can be related to enthalpy of mixing and charge neutrality constraints. We demonstrate how charge neutrality can be identified and achieved by the oxidation states that the different cations assume depending on alloy composition and the presence of defects.
△ Less
Submitted 23 August, 2020;
originally announced August 2020.
-
Native point defects from stoichiometry-linked chemical potentials in cubic boron arsenide
Authors:
Yaxian Wang,
Wolfgang Windl
Abstract:
The presence of a point defect typically breaks the stoichiometry in a semiconductor. For example, a vacancy on an A-site in an AB compound makes the crystal B-rich. As the stoichiometry changes, so do the chemical potentials. While the prevalent first-principles methods have provided significant insight into characters of point defects in a transparent manner, the crucial connection between cryst…
▽ More
The presence of a point defect typically breaks the stoichiometry in a semiconductor. For example, a vacancy on an A-site in an AB compound makes the crystal B-rich. As the stoichiometry changes, so do the chemical potentials. While the prevalent first-principles methods have provided significant insight into characters of point defects in a transparent manner, the crucial connection between crystal stoichiometry and chemical potentials is usually not made. However, ad hoc choices for chemical potentials can lead to nonphysical negative formation energies in some Fermi level ranges, along with questions about charge balance. Herein, we formulate a canonical framework describing how the chemical potential of each element is directly linked to the composition of the crystal under (off-)stoichiometric conditions instead of the ad hoc assumption that the chemical potential is the elemental limit under a certain growth condition. Consequently, the chemical potential changes with the Fermi level within the band gap, and the formation energies are positive. Using such an approach, we present $ab$ $initio$ results for native point defects in BAs, a semiconductor with ultra-high room temperature thermal conductivity. We find that antisites are the constitutional defects in off-stoichiometric material, while B$_\mathrm{As}$ antisites and B vacancies dominate in the stoichiometric material. We further discuss the thermodynamic equilibrium and charge neutrality point in BAs in light of our stoichiometry-determined chemical potentials. As discussed, our work offers a more applicable and accessible approach to tackle defect formation energies in semiconductors, especially the ones with wide gap where negative formation energies are commonly seen.
△ Less
Submitted 19 February, 2021; v1 submitted 17 February, 2019;
originally announced February 2019.
-
Ferromagnetic Epitaxial μ-Fe$_{2}$O$_{3}$ on β-Ga$_{2}$O$_{3}$: A New Monoclinic form of Fe$_{2}$O$_{3}$
Authors:
John S. Jamison,
Brelon J. May,
Julia I. Deitz,
Szu-Chia Chien,
David W. McComb,
Tyler J. Grassman,
Wolfgang Windl,
Roberto C. Myers
Abstract:
Here we demonstrate a new monoclinic iron oxide phase (μ-Fe$_{2}$O$_{3}$), epitaxially stabilized by growth on (010) β-Ga$_{2}$O$_{3}$. Density functional theory (DFT) calculations find that the lattice parameters of freestanding μ-Fe$_{2}$O$_{3}$ are within ~1% of those of β-Ga$_{2}$O$_{3}$ and that its energy of formation is comparable to that of naturally abundant Fe$_{2}$O$_{3}$ polytypes. A s…
▽ More
Here we demonstrate a new monoclinic iron oxide phase (μ-Fe$_{2}$O$_{3}$), epitaxially stabilized by growth on (010) β-Ga$_{2}$O$_{3}$. Density functional theory (DFT) calculations find that the lattice parameters of freestanding μ-Fe$_{2}$O$_{3}$ are within ~1% of those of β-Ga$_{2}$O$_{3}$ and that its energy of formation is comparable to that of naturally abundant Fe$_{2}$O$_{3}$ polytypes. A superlattice of μ-Fe$_{2}$O$_{3}$/β-Ga$_{2}$O$_{3}$ is grown by plasma assisted molecular beam epitaxy, with resulting high-resolution x-ray diffraction (XRD) measurements indicating that the μ-Fe$_{2}$O$_{3}$ layers are lattice-matched to the substrate. The measured out-of-plane (b) lattice parameter of 3.12 $\pm$ 0.4 Å is in agreement with the predicted lattice constants and atomic-resolution scanning transmission electron microscopy (STEM) images confirm complete registry of the μ-Fe$_{2}$O$_{3}$ layers with β-Ga$_{2}$O$_{3}$. Finally, DFT modeling predicts that bulk μ-Fe$_{2}$O$_{3}$ is antiferromagnetic, while the interface region between μ-Fe$_{2}$O$_{3}$ and β-Ga$_{2}$O$_{3}$ leads to ferromagnetic coupling between interface Fe$^{3+}$ cations selectively occupying tetrahedral positions. Magnetic hysteresis persisting to room temperature is observed via SQUID measurements, consistent with the computationally predicted interface magnetism.
△ Less
Submitted 9 September, 2019; v1 submitted 15 January, 2019;
originally announced January 2019.
-
Multi-Cell Monte Carlo Method for Phase Prediction
Authors:
Changning Niu,
You Rao,
Wolfgang Windl,
Maryam Ghazisaeidi
Abstract:
We propose a Multi-Cell Monte Carlo algorithm, or (MC)^2, for predicting stable phases in chemically complex crystalline systems. Free atomic transfer among cells is achieved via the application of the lever rule, where an assigned molar ratio virtually controls the percentage of each cell in the overall simulation, making (MC)^2 the first successful algorithm for simulating phase coexistence in c…
▽ More
We propose a Multi-Cell Monte Carlo algorithm, or (MC)^2, for predicting stable phases in chemically complex crystalline systems. Free atomic transfer among cells is achieved via the application of the lever rule, where an assigned molar ratio virtually controls the percentage of each cell in the overall simulation, making (MC)^2 the first successful algorithm for simulating phase coexistence in crystalline solids. During the application of this method, all energies are computed via direct Density Functional Theory calculations. We test the method by successful prediction of the stable phases of known binary systems. We then apply the method to a quaternary high entropy alloy. The method is particularly robust in predicting stable phases of multi-component systems for which phase diagrams do not exist.
△ Less
Submitted 9 November, 2018;
originally announced November 2018.
-
Raman Spectroscopy, Photocatalytic Degradation and Stabilization of Atomically Thin Chromium Triiodide
Authors:
Dmitry Shcherbakov,
Petr Stepanov,
Daniel Weber,
Yaxian Wang,
Jin Hu,
Yanglin Zhu,
Kenji Watanabe,
Takashi Taniguchi,
Zhiqiang Mao,
Wolfgang Windl,
Joshua Goldberger,
Marc Bockrath,
Chun Ning Lau
Abstract:
As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium triiodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challenging, due to its extreme instability under ambient conditions. Here we present Raman characterization of CrI3, and demonstrate that the main degradat…
▽ More
As a 2D ferromagnetic semiconductor with magnetic ordering, atomically thin chromium triiodide is the latest addition to the family of two-dimensional (2D) materials. However, realistic exploration of CrI3-based devices and heterostructures is challenging, due to its extreme instability under ambient conditions. Here we present Raman characterization of CrI3, and demonstrate that the main degradation pathway of CrI3 is the photocatalytic substitution of iodine by water. While simple encapsulation by Al2O3, PMMA and hexagonal BN (hBN) only leads to modest reduction in degradation rate, minimizing exposure of light markedly improves stability, and CrI3 sheets sandwiched between hBN layers are air-stable for >10 days. By monitoring the transfer characteristics of CrI3/graphene heterostructure over the course of degradation, we show that the aquachromium solution hole-dopes graphene.
△ Less
Submitted 23 May, 2018;
originally announced May 2018.
-
NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase
Authors:
Maxx Q. Arguilla,
Jyoti Katoch,
Kevin Krymowski,
Nicholas D. Cultrara,
Jinsong Xu,
Xiaoxiang Xi,
Amanda Hanks,
Shishi Jiang,
Richard D. Ross,
Roland J. Koch,
Søren Ulstrup,
Aaron Bostwick,
Chris Jozwiak,
Dave McComb,
Eli Rotenberg,
Jie Shan,
Wolfgang Windl,
Roland K. Kawakami,
Joshua E. Goldberger
Abstract:
The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1…
▽ More
The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1 or 2 element, Tt = Group 14 tetrel element and Pn = Group 15 pnictogen element) and feature networks separated by van der Waals gaps can be readily exfoliated with both mechanical and liquid-phase methods. We identified the symmetries of the Raman active modes of the bulk crystals via polarized Raman spectroscopy. The bulk and mechanically exfoliated NaSn2As2 samples are resistant towards oxidation, with only the top surface oxidizing in ambient conditions over a couple of days, while the liquid-exfoliated samples oxidize much more quickly in ambient conditions. Employing angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT), and transport on bulk and exfoliated samples, we show that NaSn2As2 is a highly conducting 2D semimetal, with resistivities on the order of 10-6 Ω m. Due to peculiarities in the band structure, the dominating p-type carriers at low temperature are nearly compensated by the opening of n-type conduction channels as temperature increases. This work further expands the family of exfoliatable 2D materials to layered van der Waals Zintl phases, opening up opportunities in electronics and spintronics.
△ Less
Submitted 24 October, 2017;
originally announced October 2017.
-
Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers
Authors:
Walid Amamou,
Igor V. Pinchuk,
Amanda Hanks,
Robert Williams,
Nikolas Antolin,
Adam Goad,
Dante J. O'Hara,
Adam S. Ahmed,
Wolfgang Windl,
David W. McComb,
Roland K. Kawakami
Abstract:
We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt v…
▽ More
We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt via AMR is further supported by density functional theory calculations and various control measurements including insertion of a Cu spacer layer to suppress the induced ferromagnetism. In addition, anomalous Hall effect measurements show an out-of-plane magnetic hysteresis loop of the induced ferromagnetic phase with larger coercivity and larger remanence than the bulk CoFe2O4. By demonstrating MPE in Pt/CoFe2O4, these results establish the spinel ferrite family as a promising material for MPE and spin manipulation via proximity exchange fields.
△ Less
Submitted 26 June, 2017;
originally announced June 2017.
-
Improved model for the thermal conductivity of binary metallic systems
Authors:
Changdong Wei,
Nikolas Antolin,
Oscar D. Restrepo,
Wolfgang Windl,
Ji-Cheng Zhao
Abstract:
We extended and corrected Mott's two-band model for the composition-dependence of thermal and electrical conductivity in binary metal alloys based on high-throughput time-domain thermoreflectance (TDTR) measurements on diffusion multiples and scatterer-density calculations from first principles. Examining PdAg, PtRh, AuAg, AuCu, PdCu, PdPt, and NiRh binary alloys, we found that the nature of the t…
▽ More
We extended and corrected Mott's two-band model for the composition-dependence of thermal and electrical conductivity in binary metal alloys based on high-throughput time-domain thermoreflectance (TDTR) measurements on diffusion multiples and scatterer-density calculations from first principles. Examining PdAg, PtRh, AuAg, AuCu, PdCu, PdPt, and NiRh binary alloys, we found that the nature of the two dominant scatterer-bands considered in the Mott model changes with the alloys, and should be interpreted as a combination of the dominant element-specific s- and/or d-orbitals. Using calculated orbital and element-resolved density-of-states values calculated with density functional theory as input, we determined the correct orbital mix that dominates electron scattering for all examined alloys and find excellent agreement between fitted models and experiments. The proposed description of the composition dependence of the resistivity can be readily implemented into the CALPHAD framework.
△ Less
Submitted 30 September, 2016; v1 submitted 29 June, 2016;
originally announced June 2016.
-
Effects of the local structure dependence of evaporation fields on field evaporation behavior
Authors:
Lan Yao,
Travis Withrow,
Oscar D. Restrepo,
Wolfgang Windl,
Emmanuelle A. Marquis
Abstract:
Accurate three dimensional reconstructions of atomic positions, and full quantification of the information contained in atom probe tomography data relies on understanding the physical processes taking place during field evaporation of atoms from needle-shaped specimens. However, the modeling framework for atom probe tomography has remained qualitative at best. Building on the continuum field model…
▽ More
Accurate three dimensional reconstructions of atomic positions, and full quantification of the information contained in atom probe tomography data relies on understanding the physical processes taking place during field evaporation of atoms from needle-shaped specimens. However, the modeling framework for atom probe tomography has remained qualitative at best. Building on the continuum field models previously developed, we introduce a more physical approach with the selection of evaporation events based on density functional theory calculations. This new model reproduces key features observed experimentally in terms of sequence of evaporation, desorption maps, and depth resolution, and provides insights into the physical limit for spatial resolution.
△ Less
Submitted 19 August, 2015;
originally announced August 2015.
-
Electron-Hole Pair Generation in SiC High-Temperature Alpha Particle Detectors
Authors:
Timothy R. Garcia,
Ashutosh Kumar,
Benjamin T. Reinke,
Thomas E. Blue,
Wolfgang E. Windl
Abstract:
We demonstrate alpha-particle detection in an n-type 4H-SiC Schottky diode detector up to an unprecedented temperature of 500 °C using an Am-241 disc source. The measured spectra were used to calculate the electron-hole pair creation energy in 4H-SiC and its non-bandgap contribution, which are both found to decrease with increasing temperature. The full width at half maximum (FWHM) of the measured…
▽ More
We demonstrate alpha-particle detection in an n-type 4H-SiC Schottky diode detector up to an unprecedented temperature of 500 °C using an Am-241 disc source. The measured spectra were used to calculate the electron-hole pair creation energy in 4H-SiC and its non-bandgap contribution, which are both found to decrease with increasing temperature. The full width at half maximum (FWHM) of the measured alpha-energy peaks was found to increase exponentially with temperature due to an exponential increase of leakage current. For our measurement system, above 300 °C, where the leakage current was 10-6 A, this increase exceeded the FWHM at room temperature.
△ Less
Submitted 13 August, 2013;
originally announced August 2013.
-
Structural evolution and kinetics in Cu-Zr Metallic Liquids
Authors:
Logan Ward,
Dan Miracle,
Wolfgang Windl,
Oleg Senkov,
Katharine Flores
Abstract:
The atomic structure of the supercooled liquid has often been discussed as a key source of glass formation in metals. The presence of icosahedrally-coordinated clusters and their tendency to form networks have been identified as one possible structural trait leading to glass forming ability in the Cu-Zr binary system. In this work, we show that this theory is insufficient to explain glass formatio…
▽ More
The atomic structure of the supercooled liquid has often been discussed as a key source of glass formation in metals. The presence of icosahedrally-coordinated clusters and their tendency to form networks have been identified as one possible structural trait leading to glass forming ability in the Cu-Zr binary system. In this work, we show that this theory is insufficient to explain glass formation at all compositions in that binary system. Instead, we propose that the formation of ideally-packed clusters at the expense of atomic arrangements with excess or deficient free volume can explain glass-forming by a similar mechanism. We show that this behavior is reflected in the structural relaxation of a metallic glass during constant pressure cooling and the time evolution of structure at a constant volume. We then demonstrate that this theory is sufficient to explain slowed diffusivity in compositions across the range of Cu-Zr metallic glasses.
△ Less
Submitted 9 May, 2013;
originally announced May 2013.
-
Rapid Production of Accurate Embedded-Atom Method Potentials for Metal Alloys
Authors:
Logan Ward,
Anupriya Agrawal,
Katharine M. Flores,
Wolfgang Windl
Abstract:
The most critical limitation to the wide-scale use of classical molecular dynamics for alloy design is the availability of suitable interatomic potentials. In this work, we demonstrate a simple procedure to generate a library of accurate binary potentials using already-existing single-element potentials that can be easily combined to form multi-component alloy potentials. For the Al-Ni, Cu-Au, and…
▽ More
The most critical limitation to the wide-scale use of classical molecular dynamics for alloy design is the availability of suitable interatomic potentials. In this work, we demonstrate a simple procedure to generate a library of accurate binary potentials using already-existing single-element potentials that can be easily combined to form multi-component alloy potentials. For the Al-Ni, Cu-Au, and Cu-Al-Zr systems, we show that this method produces results comparable in accuracy to alloy potentials where all parts have been fitted simultaneously, without the additional computational expense. Furthermore, we demonstrate applicability to both crystalline and amorphous phases.
△ Less
Submitted 4 September, 2012;
originally announced September 2012.
-
Fast Free Energy Calculations for Unstable High-Temperature Phases
Authors:
Nikolas Antolin,
Oscar D. Restrepo,
Wolfgang Windl
Abstract:
We present a fast and accurate method to calculate vibrational properties for mechanically unstable high temperature phases that suffer from imaginary frequencies at zero temperature. The method is based on standard finite-difference calculations with optimized large displacements and is significantly more efficient than other methods. We demonstrate its application for calculation of phonon dispe…
▽ More
We present a fast and accurate method to calculate vibrational properties for mechanically unstable high temperature phases that suffer from imaginary frequencies at zero temperature. The method is based on standard finite-difference calculations with optimized large displacements and is significantly more efficient than other methods. We demonstrate its application for calculation of phonon dispersion relations, free energies, phase transition temperatures, and vacancy formation energies for body-centered cubic high-temperature phases of Ti, Zr, and Hf.
△ Less
Submitted 9 July, 2012; v1 submitted 6 January, 2012;
originally announced January 2012.
-
Defect states and disorder in charge transport in semiconductor nanowires
Authors:
Dongkyun Ko,
X. W. Zhao,
Kongara M. Reddy,
O. D. Restrepo,
R. Mishra,
I. S. Beloborodov,
Nandini Trivedi,
Nitin P. Padture,
W. Windl,
F. Y. Yang,
E. Johnston-Halperin
Abstract:
We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not we…
▽ More
We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices.
△ Less
Submitted 22 June, 2011;
originally announced June 2011.
-
First principles calculation of polarization induced interfacial charges in GaN/AlN heterostructures
Authors:
Rohan Mishra,
Oscar D. Restrepo,
Siddharth Rajan,
Wolfgang Windl
Abstract:
We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-c…
▽ More
We propose a new method to calculate polarization induced interfacial charges in semiconductor heterostructures using classical electrostatics applied to real-space band diagrams from first principles calculations and apply it to GaN/AlN heterostructures with ultrathin AlN layers (4-6 monolayers). We show that the calculated electric fields and interfacial charges are independent of the exchange-correlation functionals used (local-density approximation and hybrid functionals). We also find the calculated interfacial charge of (6.8 +/- 0.4) x 10^13 cm-2 to be in excellent agreement with experiments and the value of 6.58 x 10^13 cm-2 calculated from bulk polarization constants, validating the use of bulk constants even for very thin films.
△ Less
Submitted 17 May, 2011; v1 submitted 20 April, 2011;
originally announced April 2011.
-
Full first-principles theory of spin relaxation in group-IV materials
Authors:
Oscar D. Restrepo,
Wolfgang Windl
Abstract:
We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the Elliott-Yafet mechanism, where spin relaxation is induced by momentum scattering off phonons and impurities. In silicon, we find a $\sim T^{-3}$ temperature depend…
▽ More
We present a generally applicable parameter-free first-principles method to determine electronic spin relaxation times and apply it to the technologically important group-IV materials silicon, diamond and graphite. We concentrate on the Elliott-Yafet mechanism, where spin relaxation is induced by momentum scattering off phonons and impurities. In silicon, we find a $\sim T^{-3}$ temperature dependence of the phonon-limited spin relaxation time T$_1$ and a value of 4.3 ns at room temperature, in agreement with experiments. For the phonon-dominated regime in diamond and graphite, we predict a stronger $\sim T^{-5}$ and $\sim T^{-4.5}$ dependence that limits $T_1$ (300 K) to 180 and 5.8 ns, respectively. A key aspect of this study is that the parameter-free nature of our approach provides a method to study the effect of {\em any} type of impurity or defect on spin-transport. Furthermore we find that the spin-mix amplitude in silicon does not follow the $E_g^{-2}$ band gap dependence usually assigned to III-V semiconductors but follows a much weaker and opposite $E_g^{0.67}$ dependence. This dependence should be taken into account when constructing silicon spin transport models.
△ Less
Submitted 18 September, 2012; v1 submitted 26 October, 2010;
originally announced October 2010.
