-
Weakly linearly Lindelöf monotonically normal spaces are Lindelöf
Authors:
I. Juhász,
V. V. Tkachuk,
R. G. Wilson
Abstract:
We call a space $X$ {\it weakly linearly Lindelöf} if for any family $\mathcal{U}$ of non-empty open subsets of $X$ of regular uncountable cardinality $κ$, there exists a point $x\in X$ such that every neighborhood of $x$ meets $κ$-many elements of $\mathcal{U}$. We also introduce the concept of {\it almost discretely Lindelöf} spaces as the ones in which every discrete subspace can be covered by…
▽ More
We call a space $X$ {\it weakly linearly Lindelöf} if for any family $\mathcal{U}$ of non-empty open subsets of $X$ of regular uncountable cardinality $κ$, there exists a point $x\in X$ such that every neighborhood of $x$ meets $κ$-many elements of $\mathcal{U}$. We also introduce the concept of {\it almost discretely Lindelöf} spaces as the ones in which every discrete subspace can be covered by a Lindelöf subspace. We prove that, in addition to linearly Lindelöf spaces, both weakly Lindelöf spaces and almost discretely Lindelöf spaces are weakly linearly Lindelöf.
The main result of the paper is formulated in the title. It implies, among other things, that every weakly Lindelöf monotonically normal space is Lindelöf; this result seems to be new even for linearly ordered topological spaces.
We show that, under the hypothesis $2^ω< ω_ω$, if the co-diagonal $Δ^c_X=(X\times X)\setminus Δ_X$ of a space $X$ is discretely Lindelöf, then $X$ is Lindelöf and has a weaker second countable topology; here $Δ_X=\{(x,x): x\in X\}$ is the diagonal of the space $X$. Moreover, the discrete Lindelöfness of $Δ^c_X$ together with the Lindelöf $Σ$-property of $X$ imply that $X$ has a countable network.
△ Less
Submitted 14 October, 2016;
originally announced October 2016.
-
Carrier-mediated ferromagnetic ordering in Mn ion-implanted p+GaAs:C
Authors:
Y. D. Park,
J. D. Lim,
K. S. Suh,
S. B. Shim,
J. S. Lee,
C. R. Abernathy,
S. J. Pearton,
Y. S. Kim,
Z. G. Khim,
R. G. Wilson
Abstract:
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraord…
▽ More
Highly p-type GaAs:C was ion-implanted with Mn at differing doses to produce Mn concentrations in the 1 - 5 at.% range. In comparison to LT-GaAs and n+GaAs:Si samples implanted under the same conditions, transport and magnetic properties show marked differences. Transport measurements show anomalies, consistent with observed magnetic properties and with epi- LT-(Ga,Mn)As, as well as the extraordinary Hall Effect up to the observed magnetic ordering temperature (T_C). Mn ion-implanted p+GaAs:C with as-grown carrier concentrations > 10^20 cm^-3 show remanent magnetization up to 280 K.
△ Less
Submitted 11 August, 2003;
originally announced August 2003.
-
Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C
Authors:
N. Theodoropoulou,
A. F. Hebard,
M. E. Overberg,
C. R. Abernathy,
S. J. Pearton,
S. N. G. Chu,
R. G. Wilson
Abstract:
Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at.% value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of one Bohr magneton, and the spin wave…
▽ More
Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is suppressed when the Mn dose is increased or decreased away from the 3 at.% value, or when n-type GaP substrates are used. At low temperatures the saturated moment is on the order of one Bohr magneton, and the spin wave stiffness inferred from the Bloch-law T^3/2 dependence of the magnetization provides an estimate Tc = 385K of the Curie temperature that exceeds the experimental value, Tc = 270K. The presence of ferromagnetic clusters and hysteresis to temperatures of at least 330K is attributed to disorder and proximity to a metal-insulating transition.
△ Less
Submitted 26 January, 2002;
originally announced January 2002.
