-
Formation of Beta-Indium Selenide Layers Grown via Selenium Passivation of InP(111)B Substrate
Authors:
Kaushini S. Wickramasinghe,
Candice Forrester,
Martha R. McCartney,
David J. Smith,
Maria C. Tamargo
Abstract:
Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. In2Se3 also provides the important advantage of tuning the electrical properties of ultra-thin layers with an external electrical and…
▽ More
Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. In2Se3 also provides the important advantage of tuning the electrical properties of ultra-thin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, In2Se3 has many different polymorphs, and it has been challenging to synthesize single-phase material, especially using scalable growth methods, as needed for technological applications. In this paper, we use aberration-corrected scanning transmission electron microscopy to characterize the microstructure of twin-free single-phase ultra-thin layers of beta-In2Se3, prepared by a unique molecular beam epitaxy approach. We emphasize features of the In2Se3 layer and In2Se3/InP interface which provide evidence for understanding the growth mechanism of the single-phase In2Se3. This novel approach for forming high-quality twin-free single phase two-dimensional crystals on InP substrates is likely to be applicable to other technologically important substrates.
△ Less
Submitted 15 May, 2024; v1 submitted 15 May, 2024;
originally announced May 2024.
-
Molecular Beam Epitaxy of Twin-Free Bi2Se3 and Sb2Te3 on In2Se3/InP(111)B Virtual Substrates
Authors:
Kaushini S. Wickramasinghe,
Candice Forrester,
Maria C. Tamargo
Abstract:
Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels is often hampered by the presence of crystal defects, such as antisites, vacancies and twin domains. For terahertz device applications, twinning is sho…
▽ More
Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface channels is often hampered by the presence of crystal defects, such as antisites, vacancies and twin domains. For terahertz device applications, twinning is shown to be highly deleterious. Previous attempts to reduce twins using technologically important InP(111) substrates have been promising, but have failed to completely suppress twin domains while preserving high structural quality. Here we report growth of twin-free molecular beam epitaxial Bi2Se3 and Sb2Te3 structures on ultra-thin In2Se3 layers formed by a novel selenium passivation technique during the oxide desorption of smooth, non-vicinal InP(111)B substrates, without the use of an indium source. The formation of un-twinned In2Se3 provides a favorable template to fully suppress twin domains in 3D-TIs, greatly broadening novel device applications in the terahertz regime.
△ Less
Submitted 21 February, 2023;
originally announced February 2023.
-
Epitaxial Superconductor-Semiconductor Two-Dimensional Systems for Superconducting Quantum Circuits
Authors:
Joseph O'Connell Yuan,
Kaushini S. Wickramasinghe,
William M. Strickland,
Matthieu C. Dartiailh,
Kasra Sardashti,
Mehdi Hatefipour,
Javad Shabani
Abstract:
Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabrica…
▽ More
Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabricate voltage-controlled Josephson junction field effect transistor (JJ-FET) that can be used as tunable qubits, resonators, and coupler switches. We find that band gap engineering is crucial in realizing a two-dimensional electron gas near the surface. In addition, we show how the coupling between the semiconductor layer and the superconducting contacts can affect qubit properties. We present the anharmonicity and coupling strengths from one and two-photon absorption in a quantum two level system fabricated with a JJ-FET.
△ Less
Submitted 26 March, 2021;
originally announced April 2021.
-
Missing Shapiro steps in topologically trivial Josephson Junction on InAs quantum well
Authors:
Matthieu C. Dartiailh,
Joseph J. Cuozzo,
William Mayer,
Joseph Yuan,
Kaushini S. Wickramasinghe,
Enrico Rossi,
Javad Shabani
Abstract:
Josephson junctions hosting Majorana fermions have been predicted to exhibit a 4$π$ periodic current phase relation. The experimental consequence of this periodicity is the disappearance of odd steps in Shapiro steps experiments. Experimentally, missing odd Shapiro steps have been observed in a number of materials systems with strong spin-orbit coupling and have been interpreted in the context of…
▽ More
Josephson junctions hosting Majorana fermions have been predicted to exhibit a 4$π$ periodic current phase relation. The experimental consequence of this periodicity is the disappearance of odd steps in Shapiro steps experiments. Experimentally, missing odd Shapiro steps have been observed in a number of materials systems with strong spin-orbit coupling and have been interpreted in the context of topological superconductivity. Here, we report on missing odd steps in topologically trivial Josephson junctions fabricated on InAs quantum wells. We ascribe our observations to the high transparency of our junctions allowing Landau-Zener transitions. The probability of these processes is found to be independent of the drive frequency. We analyze our results using a bi-modal transparency distribution which demonstrates that only few modes carrying 4$π$ periodic current are sufficient to describe the disappearance of odd steps. Our findings highlight the elaborate circumstances that have to be considered in the investigation of the 4$π$ Josephson junctions in relationship to topological superconductivity.
△ Less
Submitted 30 April, 2020;
originally announced May 2020.
-
Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells
Authors:
Joseph Yuan,
Mehdi Hatefipour,
Brenden A. Magill,
William Mayer,
Matthieu C. Dartiailh,
Kasra Sardashti,
Kaushini S. Wickramasinghe,
Giti A. Khodaparast,
Yasuhiro H. Matsuda,
Yoshimitsu Kohama,
Zhuo Yang,
Sunil Thapa,
Christopher J. Stanton,
Javad Shabani
Abstract:
Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the…
▽ More
Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the surface. The electron mass extracted from the envelope of the Shubnikov-de Haas oscillations shows an average effective mass $m^{*}$ = 0.04 at low magnetic field. Complementary to our magnetotransport study, we employed cyclotron resonance measurements and extracted the electron effective mass in the ultra high magnetic field regime. Our measurements show that the effective mass depends on magnetic field in this regime. The data can be understood by considering a model that includes non-parabolicity of the indium arsenide conduction bands.
△ Less
Submitted 18 May, 2020; v1 submitted 6 November, 2019;
originally announced November 2019.
-
Superconducting proximity effect in InAsSb surface quantum wells with in-situ Al contact
Authors:
William Mayer,
William F. Schiela,
Joseph Yuan,
Mehdi Hatefipour,
Wendy L. Sarney,
Stefan P. Svensson,
Asher C. Leff,
Tiago Campos,
Kaushini S. Wickramasinghe,
Matthieu C. Dartiailh,
Igor Zutic,
Javad Shabani
Abstract:
We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable prop…
▽ More
We demonstrate robust superconducting proximity effect in InAs$_{0.5}$Sb$_{0.5}$ quantum wells grown with epitaxial Al contact, which has important implications for mesoscopic and topological superconductivity. Unlike more commonly studied InAs and InSb semiconductors, bulk InAs$_{0.5}$Sb$_{0.5}$ supports stronger spin-orbit coupling and larger $g$-factor. However, these potentially desirable properties have not been previously measured in epitaxial heterostructures with superconductors, which could serve as a platform for fault-tolerant topological quantum computing. Through structural and transport characterization we observe high-quality interfaces and strong spin-orbit coupling. We fabricate Josephson junctions based on InAs$_{0.5}$Sb$_{0.5}$ quantum wells and observe strong proximity effect. These junctions exhibit product of normal resistance and critical current, $I_{c}R_{N} = \SI{270}{\micro V}$, and excess current, $I_{ex}R_{N} = \SI{200}{\micro V}$ at contact separations of 500~nm. Both of these quantities demonstrate a robust and long-range proximity effect with highly-transparent contacts.
△ Less
Submitted 31 March, 2020; v1 submitted 27 September, 2019;
originally announced September 2019.
-
Phase signature of topological transition in Josephson Junctions
Authors:
Matthieu C. Dartiailh,
William Mayer,
Joseph Yuan,
Kaushini S. Wickramasinghe,
Alex Matos-Abiague,
Igor Žutić,
Javad Shabani
Abstract:
Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $π$-jump in the junction phase with increasing in-…
▽ More
Topological superconductivity holds promise for fault-tolerant quantum computing. While planar Josephson junctions are attractive candidates to realize this exotic state, direct phase-measurements as the fingerprint of the topological transition are missing. By embedding two gate-tunable Al/InAs Josephson junctions in a loop geometry, we measure a $π$-jump in the junction phase with increasing in-plane magnetic field, ${\bf B}_\|$. This jump is accompanied by a minimum of the critical current, indicating a closing and reopening of the superconducting gap, strongly anisotropic in ${\bf B}_\|$. Our theory confirms that these signatures of a topological transition are compatible with the emergence of Majorana states.
△ Less
Submitted 22 January, 2021; v1 submitted 3 June, 2019;
originally announced June 2019.
-
Gate Controlled Anomalous Phase Shift in Al/InAs Josephson Junctions
Authors:
William Mayer,
Matthieu C. Dartiailh,
Joseph Yuan,
Kaushini S. Wickramasinghe,
Enrico Rossi,
Javad Shabani
Abstract:
In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal symmetries. However, the combined presence of spin-orbit coupling and magnetic field breaks these symmetries and can lead to a finite supercurrent even when the phase difference is zero. This is the so called anomalous Jos…
▽ More
In a standard Josephson junction the current is zero when the phase difference between the superconducting leads is zero. This condition is protected by parity and time-reversal symmetries. However, the combined presence of spin-orbit coupling and magnetic field breaks these symmetries and can lead to a finite supercurrent even when the phase difference is zero. This is the so called anomalous Josephson effect -- the hallmark effect of superconducting spintronics --and can be characterized by the corresponding anomalous phase shift ($φ_0$). We report the observation of a tunable anomalous Josephson effect in InAs/Al Josephson junctions measured via a superconducting quantum interference device (SQUID). By gate controlling the density of InAs we are able to tune the spin-orbit coupling of the Josephson junction by more than one order of magnitude. This gives us the ability to tune $φ_0$, and opens several new opportunities for superconducting spintronics, and new possibilities for realizing and characterizing topological superconductivity.
△ Less
Submitted 29 May, 2019;
originally announced May 2019.
-
In-Plane Magnetoconductance Mapping of InSb Quantum Wells
Authors:
J. T. Mlack,
K. S. Wickramasinghe,
T. D. Mishima,
M. B. Santos,
C. M. Marcus
Abstract:
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. T…
▽ More
In-plane magnetoconductance of InSb quantum wells (QW) containing a two dimensional electron gas (2DEG) is presented. Using a vector magnet, we created a magnetoconductance map which shows the suppression of weak antilocalization (WAL) as a function of applied field. By fitting the in-plane field response of the 2DEG, we estimate material disorder and g-factor as a function of crystal direction. The in-plane WAL suppression is found to be dominated by the Zeeman effect and to show a small crystal-orientation-dependent anistropy in disorder and g-factor. These measurements show the utility of multi-directional measurement of magnetoconductance in analyzing material properties.
△ Less
Submitted 20 February, 2019;
originally announced February 2019.
