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Coherent Erbium Spin Defects in Colloidal Nanocrystal Hosts
Authors:
Joeson Wong,
Mykyta Onizhuk,
Jonah Nagura,
Arashdeep S. Thind,
Jasleen K. Bindra,
Christina Wicker,
Gregory D. Grant,
Yuxuan Zhang,
Jens Niklas,
Oleg G. Poluektov,
Robert F. Klie,
Jiefei Zhang,
Giulia Galli,
F. Joseph Heremans,
David D. Awschalom,
A. Paul Alivisatos
Abstract:
We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium s…
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We demonstrate nearly a microsecond of spin coherence in Er3+ ions doped in cerium dioxide nanocrystal hosts, despite a large gyromagnetic ratio and nanometric proximity of the spin defect to the nanocrystal surface. The long spin coherence is enabled by reducing the dopant density below the instantaneous diffusion limit in a nuclear spin-free host material, reaching the limit of a single erbium spin defect per nanocrystal. We observe a large Orbach energy in a highly symmetric cubic site, further protecting the coherence in a qubit that would otherwise rapidly decohere. Spatially correlated electron spectroscopy measurements reveal the presence of Ce3+ at the nanocrystal surface that likely acts as extraneous paramagnetic spin noise. Even with these factors, defect-embedded nanocrystal hosts show tremendous promise for quantum sensing and quantum communication applications, with multiple avenues, including core-shell fabrication, redox tuning of oxygen vacancies, and organic surfactant modification, available to further enhance their spin coherence and functionality in the future.
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Submitted 11 June, 2024;
originally announced June 2024.
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Extended spin relaxation times of optically addressed telecom defects in silicon carbide
Authors:
Jonghoon Ahn,
Christina Wicker,
Nolan Bitner,
Michael T. Solomon,
Benedikt Tissot,
Guido Burkard,
Alan M. Dibos,
Jiefei Zhang,
F. Joseph Heremans,
David D. Awschalom
Abstract:
Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconducto…
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Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all optical measurements of temperature-dependent spin relaxation times (T1). With this technique, we lower the temperature from about 2K to 100 mK to observe a remarkable four-orders-of-magnitude increase in spin T1 from all measured sites, with site-specific values ranging from 57 ms to above 27 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain-tuning to enable qubit operation at higher temperatures. These results position V4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks.
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Submitted 25 May, 2024;
originally announced May 2024.
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Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
Authors:
Connor P Horn,
Christina Wicker,
Antoni Wellisz,
Cyrus Zeledon,
Pavani Vamsi Krishna Nittala,
F Joseph Heremans,
David D Awschalom,
Supratik Guha
Abstract:
We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an ex…
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We detail several scientific and engineering innovations which enable the controlled spalling of 10 - 50 micron thick films of single crystal 4H silicon carbide (4H-SiC) from bulk substrates. 4H-SiC's properties, including high thermal conductivity and a wide bandgap, make it an ideal candidate for high-temperature, high-voltage power electronic devices. Moreover, 4H-SiC has been shown to be an excellent host of solid-state atomic defect qubits for quantum computing and quantum networking. Because 4H-SiC single crystal substrates are expensive (due to long growth times and limited yield), techniques for removal and transfer of bulk-quality films in the tens-of-microns thickness range are highly desirable to allow for substrate reuse and integration of the separated films. In this work we utilize novel approaches for stressor layer thickness control and spalling crack initiation to demonstrate controlled spalling of 4H-SiC, the highest fracture toughness material spalled to date. Additionally, we demonstrate substrate re-use, bonding of the spalled films to carrier substrates, and explore the spin coherence of the spalled films. In preliminary studies we are able to achieve coherent spin control of neutral divacancy ($VV^{0}$) qubit ensembles and measure a quasi-bulk spin $T_{2}$ of 79.7 $μ$s in such spalled films.
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Submitted 30 June, 2024; v1 submitted 30 April, 2024;
originally announced April 2024.
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Massive Dirac fermions in a ferromagnetic kagome metal
Authors:
Linda Ye,
Mingu Kang,
Junwei Liu,
Felix von Cube,
Christina R. Wicker,
Takehito Suzuki,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
David C. Bell,
Liang Fu,
Riccardo Comin,
Joseph G. Checkelsky
Abstract:
The kagome lattice is a two-dimensional network of corner-sharing triangles known as a platform for exotic quantum magnetic states. Theoretical work has predicted that the kagome lattice may also host Dirac electronic states that could lead to topological and Chern insulating phases, but these have evaded experimental detection to date. Here we study the d-electron kagome metal Fe$_3$Sn$_2$ design…
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The kagome lattice is a two-dimensional network of corner-sharing triangles known as a platform for exotic quantum magnetic states. Theoretical work has predicted that the kagome lattice may also host Dirac electronic states that could lead to topological and Chern insulating phases, but these have evaded experimental detection to date. Here we study the d-electron kagome metal Fe$_3$Sn$_2$ designed to support bulk massive Dirac fermions in the presence of ferromagnetic order. We observe a temperature independent intrinsic anomalous Hall conductivity persisting above room temperature suggestive of prominent Berry curvature from the time-reversal breaking electronic bands of the kagome plane. Using angle-resolved photoemission, we discover a pair of quasi-2D Dirac cones near the Fermi level with a 30 meV mass gap that accounts for the Berry curvature-induced Hall conductivity. We show this behavior is a consequence of the underlying symmetry properties of the bilayer kagome lattice in the ferromagnetic state with atomic spin-orbit coupling. This report provides the first evidence for a ferromagnetic kagome metal and an example of emergent topological electronic properties in a correlated electron system. This offers insight into recent discoveries of exotic electronic behavior in kagome lattice antiferromagnets and may provide a stepping stone toward lattice model realizations of fractional topological quantum states.
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Submitted 28 September, 2017;
originally announced September 2017.
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Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides
Authors:
Linda Ye,
Takehito Suzuki,
Christina R. Wicker,
Joseph G. Checkelsky
Abstract:
The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe$_{2}$ and rare earth monopnictide La(Sb,Bi), these systems tend to be non-magnetic, nearly compensated semimetals and represent a platform for large magnetoresistance d…
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The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe$_{2}$ and rare earth monopnictide La(Sb,Bi), these systems tend to be non-magnetic, nearly compensated semimetals and represent a platform for large magnetoresistance driven by intrinsic electronic structure. Here we explore electronic transport in magnetic members of the latter family of semimetals and find that XMR is strongly modulated by magnetic order. In particular, CeSb exhibits XMR in excess of $1.6 \times 10^{6}$ % at fields of 9 T while the magnetoresistance itself is non-monotonic across the various magnetic phases and shows a transition from negative magnetoresistance to XMR with field above magnetic ordering temperature $T_{N}$. The magnitude of the XMR is larger than in other rare earth monopnictides including the non-magnetic members and follows an non-saturating power law to fields above 30 T. We show that the overall response can be understood as the modulation of conductivity by the Ce orbital state and for intermediate temperatures can be characterized by an effective medium model. Comparison to the orbitally quenched compound GdBi supports the correlation of XMR with the onset of magnetic ordering and compensation and highlights the unique combination of orbital inversion and type-I magnetic ordering in CeSb in determining its large response. These findings suggest a paradigm for magneto-orbital control of XMR and are relevant to the understanding of rare earth-based correlated topological materials.
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Submitted 13 April, 2017;
originally announced April 2017.
