Showing 1–2 of 2 results for author: Wernersson, L -

Analysis of strain and stacking faults in single nanowires using Bragg coherent diffraction imaging

Authors: V. Favre-Nicolin, F. Mastropietro, J. Eymery, D. Camacho, Y. M. Niquet, B. M. Borg, M. E. Messing, L. -E. Wernersson, R. E. Algra, E. P. A. M. Bakkers, T. H. Metzger, R Harder, I. K. Robinson

Abstract: Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, fo… ▽ More Coherent diffraction imaging (CDI) on Bragg reflections is a promising technique for the study of three-dimensional (3D) composition and strain fields in nanostructures, which can be recovered directly from the coherent diffraction data recorded on single objects. In this article we report results obtained for single homogeneous and heterogeneous nanowires with a diameter smaller than 100 nm, for which we used CDI to retrieve information about deformation and faults existing in these wires. The article also discusses the influence of stacking faults, which can create artefacts during the reconstruction of the nanowire shape and deformation. △ Less

Submitted 21 January, 2010; v1 submitted 28 October, 2009; originally announced October 2009.

Comments: 18 pages, 6 figures Submitted to New Journal of Physics

Journal ref: New Journal of Physics 12 (2010) 035013

Analyzing capacitance-voltage measurements of vertical wrapped-gated nanowires

Authors: O. Karlström, A. Wacker, K. Nilsson, G. Astromskas, S. Roddaro, L. Samuelson, L. -E. Wernersson

Abstract: The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance-voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, qua… ▽ More The capacitance of arrays of vertical wrapped-gate InAs nanowires are analyzed. With the help of a Poisson-Schr"odinger solver, information about the doping density can be obtained directly. Further features in the measured capacitance-voltage characteristics can be attributed to the presence of surface states as well as the coexistence of electrons and holes in the wire. For both scenarios, quantitative estimates are provided. It is furthermore shown that the difference between the actual capacitance and the geometrical limit is quite large, and depends strongly on the nanowire material. △ Less

Submitted 21 August, 2008; originally announced August 2008.

Comments: 15 pages, 6 Figures included, to appear in Nanotechnology

Journal ref: Nanotechnology 19, 435201 (2008)