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Orbital-resolved anisotropic electron pockets in electron-doped SrTiO3 observed by ARPES
Authors:
Yuki K. Wakabayashi,
Akihira Munakata,
Yoshitaka Taniyasu,
Masaki Kobayashi
Abstract:
SrTiO3 has attracted considerable interest as a wide-band gap semiconductor for advanced high-k capacitors and photocatalytic applications. Although previous angle-resolved photoemission spectroscopy (ARPES) studies have characterized the valence band structure originating from O 2p orbitals, the conduction band arising from Ti 3d orbitals upon electron doping, which is called electron pockets, re…
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SrTiO3 has attracted considerable interest as a wide-band gap semiconductor for advanced high-k capacitors and photocatalytic applications. Although previous angle-resolved photoemission spectroscopy (ARPES) studies have characterized the valence band structure originating from O 2p orbitals, the conduction band arising from Ti 3d orbitals upon electron doping, which is called electron pockets, remain poorly understood. In this study, polarization-dependent ARPES measurements were performed on Nb 1%-doped SrTiO3 (001), enabling direct, orbital-selective visualization of the electron pockets. From the measured band dispersion, we quantitatively determined their effective masses, anisotropy, and electron density. Our results revealed formation of an electron pocket at the Gamma point induced by Nb doping, yielding a direct bandgap of 3.79 eV at Gamma, consistent with previous optical measurements. Furthermore, the effective masses of m1 = 0.63m0 (short-axis direction) and m2 = 8.0m0 (long-axis direction) were identified, where m0 is the free electron mass, and the Fermi surface has been shown to be ellipsoidal. The electron density derived from these dispersions was found to be 3.58e20 cm-3. These findings provide a comprehensive picture of the conduction-band electronic structure that will be crucial in the design of STO-based functional devices.
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Submitted 22 May, 2025;
originally announced May 2025.
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Optically induced spin Hall current in Janus transition-metal dichalcogenides
Authors:
Tomoaki Kameda,
Katsunori Wakabayashi
Abstract:
Monolayer Janus transition-metal dichalcogenides (TMDCs), such as WSeTe, exhibit Rashba-type spin-orbit coupling (SOC) due to broken out-of-plane mirror symmetry. Here, we theoretically demonstrate that pure spin Hall currents can be generated under light irradiation based on a tight-binding model. Rashba-type SOC plays a crucial role in determining the spin polarization direction and enhancing th…
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Monolayer Janus transition-metal dichalcogenides (TMDCs), such as WSeTe, exhibit Rashba-type spin-orbit coupling (SOC) due to broken out-of-plane mirror symmetry. Here, we theoretically demonstrate that pure spin Hall currents can be generated under light irradiation based on a tight-binding model. Rashba-type SOC plays a crucial role in determining the spin polarization direction and enhancing the generation efficiency of pure spin Hall currents. Our findings establish Janus TMDCs as promising materials for next-generation optospintronic devices.
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Submitted 10 May, 2025;
originally announced May 2025.
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Magnetic anisotropy related to hybridization between Fe 3$d$ and As 4$p$ orbitals in a bcc Fe-As thin film
Authors:
Takahito Takeda,
Karumuri Sriharsha,
Seiji Aota,
Ryo Okano,
Le Duc Anh,
Yukiharu Takeda,
Akira Yasui,
Miho Kitamura,
Yuki K. Wakabayashi,
Atsushi Fujimori,
Masaaki Tanaka,
Masaki Kobayashi
Abstract:
The magnetic anisotropy (MA) of Fe-based ferromagnetic thin films has been extensively studied for device applications. The examined material is a new Fe-based ferromagnetic thin film, bcc Fe$_{1-x}$As$_x$ (Fe-As) with the in-plane MA (IMA) grown on a GaAs (111)B substrate. The magnetic properties of the Fe-As thin film have been investigated by Xray magnetic circular dichroism (XMCD) and magnetic…
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The magnetic anisotropy (MA) of Fe-based ferromagnetic thin films has been extensively studied for device applications. The examined material is a new Fe-based ferromagnetic thin film, bcc Fe$_{1-x}$As$_x$ (Fe-As) with the in-plane MA (IMA) grown on a GaAs (111)B substrate. The magnetic properties of the Fe-As thin film have been investigated by Xray magnetic circular dichroism (XMCD) and magnetic circular dichroism in hard X-ray photoemission spectroscopy (MCD-HAXPES) to elucidate the role of As ions in the IMA. The XMCD spectra at the Fe $L_{2,3}$ edge and MCD-HAXPES spectra of the Fe 2$p$ core level exhibit ferromagnetic and metallic features like Fe metal. The XMCD at the As $L_{2,3}$ edge demonstrates that the As ions contribute to the ferromagnetism of bcc Fe-As through the hybridization between the Fe 3$d$ and As 4$p$ orbitals. The estimations of the magnetic moments of Fe using the XMCD sum rules have revealed that the orbital magnetic moment is isotropic and the magnetic dipole term is anisotropic. The anisotropy of the magnetic dipole term can be attributed to the anisotropic $p-d$ hybridization due to epitaxial strain, contributing to the IMA of bcc Fe-As. Our findings enlighten the mechanism of the MA of the non-magnetic ion-doped bcc Fe thin film, which can be applied to other magnetic 3$d$ transition metal thin films doped with non-magnetic elements.
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Submitted 9 May, 2025;
originally announced May 2025.
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Single monolayer ferromagnetic perovskite SrRuO3 with high conductivity and strong ferromagnetism
Authors:
Yuki K. Wakabayashi,
Masaki Kobayashi,
Yoshiharu Krockenberger,
Takahito Takeda,
Kohei Yamagami,
Hideki Yamamoto,
Yoshitaka Taniyasu
Abstract:
Achieving robust ferromagnetism and high conductivity in atomically thin oxide materials is critical for advancing spintronic technologies. Here, we report the growth of a highly conductive and ferromagnetic single monolayer SrRuO3 having a high Curie temperature of 154 K on DyScO3 110 substrates. The SrTiO3 capping layer effectively suppresses surface reactions, which typically hinder ferromagnet…
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Achieving robust ferromagnetism and high conductivity in atomically thin oxide materials is critical for advancing spintronic technologies. Here, we report the growth of a highly conductive and ferromagnetic single monolayer SrRuO3 having a high Curie temperature of 154 K on DyScO3 110 substrates. The SrTiO3 capping layer effectively suppresses surface reactions, which typically hinder ferromagnetism in atomically thin films. X ray absorption spectroscopy and X ray magnetic circular dichroism measurements revealed strong orbital hybridization between Ru 4d and O 2p orbitals in the SRO monolayer, which contributes to enhancement of the conductivity and ferromagnetic ordering of both the Ru 4d and O 2p orbitals. The resistivity of the single monolayer SrRuO3 on the better lattice matched DyScO3 substrate is approximately one-third of that of previously reported single monolayer SrRuO3 grown on an SrTiO3 substrate. This study highlights the potential of monolayer SrRuO3 as a platform for two dimensional magnetic oxide systems, offering new opportunities for the eploration of spintronic devices and quantum transport phenomena.
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Submitted 21 February, 2025;
originally announced February 2025.
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Wilson Loop and Topological Properties in 3D Woodpile Photonic Crystal
Authors:
Huyen Thanh Phan,
Shun Takahashi,
Satoshi Iwamoto,
Katsunori Wakabayashi
Abstract:
We numerically study the first and the second order topological states of electromagnetic (EM) wave in the three-dimensional (3D) woodpile photonic crystal (PhC). The recent studies on 3D PhCs have mainly focused on the observation of the topological states. Here, we not only focus on finding the topological states but also propose a numerical calculation method for topological invariants, which i…
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We numerically study the first and the second order topological states of electromagnetic (EM) wave in the three-dimensional (3D) woodpile photonic crystal (PhC). The recent studies on 3D PhCs have mainly focused on the observation of the topological states. Here, we not only focus on finding the topological states but also propose a numerical calculation method for topological invariants, which is based on the Wilson loop. For the 3D woodpile PhC, the topological states emerge due to the finite difference in the winding number or partial Chern number. The selection rule for the emergence of topological hinge states is also pointed out based on the topological invariants. Our numerical calculation results are essential and put a step toward the experimental realization of topological waveguide in 3D PhCs.
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Submitted 15 December, 2024;
originally announced December 2024.
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Single-layer spin-orbit-torque magnetization switching due to spin Berry curvature generated by minute spontaneous atomic displacement in a Weyl oxide
Authors:
Hiroto Horiuchi,
Yasufumi Araki,
Yuki K. Wakabayashi,
Jun'ichi Ieda,
Michihiko Yamanouchi,
Shingo Kaneta-Takada,
Yoshitaka Taniyasu,
Hideki Yamamoto,
Yoshiharu Krockenberger,
Masaaki Tanaka,
Shinobu Ohya
Abstract:
Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is expected to be significantly enhanced; this enhancement will increase the intrinsic spin Hall effect in ferromagnetic materials and, thus, the spin-orbit torques (S…
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Spin Berry curvature characterizes the band topology as the spin counterpart of Berry curvature and is crucial in generating novel spintronics functionalities. By breaking the crystalline inversion symmetry, the spin Berry curvature is expected to be significantly enhanced; this enhancement will increase the intrinsic spin Hall effect in ferromagnetic materials and, thus, the spin-orbit torques (SOTs). However, this intriguing approach has not been applied to devices; generally, the extrinsic spin Hall effect in ferromagnet/heavy-metal bilayer is used for SOT magnetization switching. Here, SOT-induced partial magnetization switching is demonstrated in a single layer of a single-crystalline Weyl oxide SrRuO3 (SRO) with a small current density of ~3.1{\times}10^6 A cm-2. Detailed analysis of the crystal structure in the seemingly perfect periodic lattice of the SRO film reveals barely discernible oxygen octahedral rotations with angles of ~5° near the interface with a substrate. Tight-binding calculations indicate that a large spin Hall conductivity is induced around small gaps generated at band crossings by the synergy of inherent spin-orbit coupling and band inversion due to the rotations, causing magnetization reversal. Our results indicate that a minute atomic displacement in single-crystal films can induce strong intrinsic SOTs that are useful for spin-orbitronics devices.
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Submitted 4 November, 2024;
originally announced November 2024.
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Influence of Ru composition deviation from stoichiometry on intrinsic spin-to-charge conversion in SrRuO3
Authors:
Shingo Kaneta-Takada,
Yuki K. Wakabayashi,
Hikari Shinya,
Yoshitaka Taniyasu,
Hideki Yamamoto,
Yoshiharu Krockenberger,
Masaaki Tanaka,
Shinobu Ohya
Abstract:
Interconversion between charge and spin currents is a key phenomenon in realizing next-generation spintronic devices. Highly efficient spin-charge interconversion is expected to occur at band crossing points in materials with large spin-orbit interactions due to enhanced spin Berry curvature. On the other hand, if defects and/or impurities are present, they affect the electronic band structure, wh…
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Interconversion between charge and spin currents is a key phenomenon in realizing next-generation spintronic devices. Highly efficient spin-charge interconversion is expected to occur at band crossing points in materials with large spin-orbit interactions due to enhanced spin Berry curvature. On the other hand, if defects and/or impurities are present, they affect the electronic band structure, which in turn reduces the spin Berry curvature. Although defects and impurities are generally numerous in materials, their influence on the spin Berry curvature and, consequently, spin-charge interconversion has often been overlooked. In this paper, we perform spin-pumping experiments for stoichiometric SrRuO3 and non-stoichiometric SrRu0.7O3 films at 300 K, where the films are in paramagnetic states, to examine how Ru composition deviation from the stoichiometric condition influences the spin-to-charge conversion, showing that SrRuO3 has a larger spin Hall angle than SrRu0.7O3. We derive the band structures of paramagnetic SrRuO3 and SrRu0.75O3 using first-principles calculations, indicating that the spin Hall conductivity originating from the spin Berry curvature decreases when the Ru deficiency is incorporated, which agrees with the experimental results. Our results suggest that point-defect- and impurity control is essential to fully exploit the intrinsic spin Berry curvature and large spin-charge interconversion function of materials. These insights help us with material designs for efficient spin-charge interconversions.
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Submitted 19 September, 2024;
originally announced September 2024.
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Correlated Ligand Electrons in the Transition-Metal Oxide SrRuO$_3$
Authors:
Yuichi Seki,
Yuki K. Wakabayashi,
Takahito Takeda,
Kohdai Inagaki,
Shin-ichi Fujimori,
Yukiharu Takeda,
Atsushi Fujimori,
Yoshitaka Taniyasu,
Hideki Yamamoto,
Yoshiharu Krockenberger,
Masaaki Tanaka,
Masaki Kobayashi
Abstract:
In transition-metal compounds, the transition-metal d electrons play an important role in their physical properties; however, the effects of the electron correlation between the ligand p electrons have not been clear yet. In this Letter, the Ru 4d and O 2p partial density of states (PDOS) in transition-metal oxide SrRuO$_3$ involving Weyl fermions are investigated by resonant photoemission spectro…
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In transition-metal compounds, the transition-metal d electrons play an important role in their physical properties; however, the effects of the electron correlation between the ligand p electrons have not been clear yet. In this Letter, the Ru 4d and O 2p partial density of states (PDOS) in transition-metal oxide SrRuO$_3$ involving Weyl fermions are investigated by resonant photoemission spectroscopy. The observations demonstrate that the O 2p PDOS is distorted from that predicted by first-principles calculations than the Ru 4d PDOS. The results indicate that the electron correlation in the ligand orbitals will be important to understand the electronic structure of the p-d hybridized state in strongly correlated electron systems, even with topological states.
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Submitted 6 September, 2024;
originally announced September 2024.
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Identifying the phases of Kane-Mele Hubbard Hamiltonian in momentum space: A many-body configuration interaction study
Authors:
Ranadeep Roy,
Sasmita Mohakud,
Katsunori Wakabayashi,
Sudipta Dutta
Abstract:
We investigate the magnetic and conduction properties of Kane-Mele Hubbard model in quasi one-dimensional honeycomb ribbon systems at half-filling by varying the strength of both spin-orbit interaction and on-site Coulomb correlation term. We use the numerical many-body configuration interaction (CI) method to investigate the dispersions of charge and spin gaps along with the momentum resolved spi…
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We investigate the magnetic and conduction properties of Kane-Mele Hubbard model in quasi one-dimensional honeycomb ribbon systems at half-filling by varying the strength of both spin-orbit interaction and on-site Coulomb correlation term. We use the numerical many-body configuration interaction (CI) method to investigate the dispersions of charge and spin gaps along with the momentum resolved spin-density profile over the full Brillouin zone. While the spin sector retains its topological nature at all values of spin-orbit coupling and Hubbard term, we report a new signature of the topological phase transition in the charge sector. This phase transition from a topological band insulating phase to a antiferromagnetically ordered Mott insulating phase is characterized by a shift of the many-body charge gap minima from Brillouin zone boundary to Dirac point. Our results provide a better understanding of the shifting of the gap-closing point in the momentum space which was reported in an earlier mean-field study of the same model and suggests an alternative numerical route to detect topological phase transition in strongly-correlated systems in terms of their momentum space behaviors.
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Submitted 28 August, 2024;
originally announced August 2024.
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SrRuO3 under tensile strain: Thickness-dependent electronic and magnetic properties
Authors:
Yuki K. Wakabayashi,
Masaki Kobayashi,
Yuichi Seki,
Kohei Yamagami,
Takahito Takeda,
Takuo Ohkochi,
Yoshitaka Taniyasu,
Yoshiharu Krockenberger,
Hideki Yamamoto
Abstract:
The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains e…
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The burgeoning fields of spintronics and topological electronics require materials possessing a unique combination of properties: ferromagnetism, metallicity, and chemical stability. SrRuO3 (SRO) stands out as a compelling candidate due to its exceptional combination of these attributes. However, understanding its behavior under tensile strain, especially its thickness-dependent changes, remains elusive. This study employs machine-learning-assisted molecular beam epitaxy to investigate SRO films with thicknesses from 1 to 10 nm. This work complements the existing focus on compressive-strained SRO, opening a new avenue for exploring its hitherto concealed potential. Using soft X-ray magnetic circular dichroism, we uncover an intriguing interplay between film thickness, electronic structure, and magnetic properties. Our key findings reveal an intensified localization of Ru 4d t2g-O 2p hybridized states at lower thicknesses, attributed to the weakened orbital hybridization. Furthermore, we find a progressive reduction of magnetic moments for both Ru and O ions as film thickness decreases. Notably, a non-ferromagnetic insulating state emerges at a critical thickness of 1 nm, marking a pivotal transition from the metallic ferromagnetic phase. These insights emphasize the importance of considering thickness-dependent properties when tailoring SRO for next-generation spintronic and topological electronic devices.
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Submitted 8 April, 2024;
originally announced April 2024.
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Superconductivity in Ca-intercalated bilayer silicene
Authors:
Jisvin Sam,
Sasmita Mohakud,
Katsunori Wakabayashi,
Sudipta Dutta
Abstract:
Within first-principles calculations, we explore superconductivity in Ca-intercalated bilayer silicene compound, Si2CaSi2. This arises from the coupling of interlayer flower-like Γ-centered Fermi surface formed by the hybridization of Ca-3d and Si-3pz orbitals with low-energy out-of-plane vibrations enabled by silicene's buckling. The consequent large electron-phonon coupling, as evident from the…
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Within first-principles calculations, we explore superconductivity in Ca-intercalated bilayer silicene compound, Si2CaSi2. This arises from the coupling of interlayer flower-like Γ-centered Fermi surface formed by the hybridization of Ca-3d and Si-3pz orbitals with low-energy out-of-plane vibrations enabled by silicene's buckling. The consequent large electron-phonon coupling, as evident from the Eliashberg spectral function leads to superconductivity below 5.4 K in this two-dimensional covalent system. Our results reveal the key control parameters to achieve superconductivity in experimentally synthesizable silicon-based thin materials that can find diverse applications.
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Submitted 5 March, 2024;
originally announced March 2024.
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Topological Edge and Corner States in Biphenylene Network
Authors:
Keiki Koizumi,
Huyen Thanh Phan,
Kento Nishigomi,
Katsunori Wakabayashi
Abstract:
The electronic states and topological properties of the biphenylene network (BPN) are analyzed using a tight-binding model based on the $π$-electron network. It is shown that tuning the hopping parameters induces topological phase transitions, leading to the emergence of edge states owing to the nontrivial topological Zak phase of the bulk BPN. Elementary band analysis clearly gives the number of…
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The electronic states and topological properties of the biphenylene network (BPN) are analyzed using a tight-binding model based on the $π$-electron network. It is shown that tuning the hopping parameters induces topological phase transitions, leading to the emergence of edge states owing to the nontrivial topological Zak phase of the bulk BPN. Elementary band analysis clearly gives the number of edge states, which are associated with the location of Wannier centers. In addition, we have presented the conditions for the emergence of corner states owing to the higher-order topological nature of BPN.
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Submitted 26 January, 2024;
originally announced January 2024.
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Topological Edge and Corner States in Biphenylene Photonic Crystal
Authors:
Huyen Thanh Phan,
Keiki Koizumi,
Feng Liu,
Katsunori Wakabayashi
Abstract:
The biphenylene network (BPN) has a unique two-dimensional atomic structure, where hexagonal unit cells are arranged on a square lattice. Inspired by such a BPN structure, we design a counterpart in the fashion of photonic crystals (PhCs), which we refer to as the BPN PhC. We study the photonic band structure using the finite element method and characterize the topological properties of the BPN Ph…
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The biphenylene network (BPN) has a unique two-dimensional atomic structure, where hexagonal unit cells are arranged on a square lattice. Inspired by such a BPN structure, we design a counterpart in the fashion of photonic crystals (PhCs), which we refer to as the BPN PhC. We study the photonic band structure using the finite element method and characterize the topological properties of the BPN PhC through the use of the Wilson loop. Our findings reveal the emergence of topological edge states in the BPN PhC, specifically in the zigzag edge and the chiral edge, as a consequence of the nontrivial Zak phase in the corresponding directions. In addition, we find the localization of electromagnetic waves at the corners formed by the chiral edges, which can be considered as second-order topological states, i.e., topological corner states.
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Submitted 28 December, 2023;
originally announced December 2023.
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Approximating Maximally Localized Wannier Functions with Position Scaling-Eigenfunction
Authors:
Yuji Hamai,
Katsunori Wakabayashi
Abstract:
Position scaling-eigenfunctions are generated by transforming compactly supported orthonormal scaling functions and utilized for faster alternatives to maximally localized Wannier functions (MLWFs). The position scaling-eigenfunctions are first applied to numerical procedures solving Schrödinger and Maxwell's equations, and the solutions well agree with preceding results. Subsequently, by projecti…
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Position scaling-eigenfunctions are generated by transforming compactly supported orthonormal scaling functions and utilized for faster alternatives to maximally localized Wannier functions (MLWFs). The position scaling-eigenfunctions are first applied to numerical procedures solving Schrödinger and Maxwell's equations, and the solutions well agree with preceding results. Subsequently, by projecting the position scaling-eigenfunctions onto the space spanned by the Bloch functions, approximated MLWFs are obtained. They show good agreements with preceding results using MLWFs. In addition, analytical explanations of the agreements and an estimate of the error associated with the approximation are provided.
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Submitted 15 December, 2023; v1 submitted 20 November, 2023;
originally announced November 2023.
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Magnetic anisotropy driven by ligand in 4d transition metal oxide SrRuO3
Authors:
Yuki K. Wakabayashi,
Masaki Kobayashi,
Yuichi Seki,
Yoshinori Kotani,
Takuo Ohkochi,
Kohei Yamagami,
Miho Kitamura,
Yoshitaka Taniyasu,
Yoshiharu Krockenberger,
Hideki Yamamoto
Abstract:
The origin of magnetic anisotropy in magnetic compounds is a longstanding issue in solid state physics and nonmagnetic ligand ions are considered to contribute little to magnetic anisotropy. Here, we introduce the concept of ligand driven magnetic anisotropy in a complex transition-metal oxide. We conducted X ray absorption and X ray magnetic circular dichroism spectroscopies at the Ru and O edges…
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The origin of magnetic anisotropy in magnetic compounds is a longstanding issue in solid state physics and nonmagnetic ligand ions are considered to contribute little to magnetic anisotropy. Here, we introduce the concept of ligand driven magnetic anisotropy in a complex transition-metal oxide. We conducted X ray absorption and X ray magnetic circular dichroism spectroscopies at the Ru and O edges in the 4d ferromagnetic metal SrRuO3. Systematic variation of the sample thickness in the range below 10 nm allowed us to control the localization of Ru 4d t2g states, which affects the magnetic coupling between the Ru and O ions. We found that the orbital magnetization of the ligand induced via hybridization with the Ru 4d orbital determines the magnetic anisotropy in SrRuO3.
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Submitted 13 September, 2023; v1 submitted 11 September, 2023;
originally announced September 2023.
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Microwave hinge states in a simple-cubic-lattice photonic crystal insulator
Authors:
Shun Takahashi,
Yuya Ashida,
Huyen Thanh Phan,
Kenichi Yamashita,
Tetsuya Ueda,
Katsunori Wakabayashi,
Satoshi Iwamoto
Abstract:
We numerically and experimentally demonstrated a higher-order topological state in a three-dimensional (3D) photonic crystal (PhC) with a complete photonic bandgap. Two types of cubic lattices were designed with different topological invariants, which were theoretically and numerically confirmed by the finite difference of their Zak phases. Topological boundary states in the two-dimensional interf…
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We numerically and experimentally demonstrated a higher-order topological state in a three-dimensional (3D) photonic crystal (PhC) with a complete photonic bandgap. Two types of cubic lattices were designed with different topological invariants, which were theoretically and numerically confirmed by the finite difference of their Zak phases. Topological boundary states in the two-dimensional interfaces and hinge states in the one-dimensional corners were formed according to the higher-order of bulk-boundary correspondence. Microwave measurements of the fabricated 3D PhC containing two boundaries and one corner showed a localized intensity, which confirmed the boundary and hinge states.
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Submitted 23 June, 2023;
originally announced July 2023.
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Symmetry manipulation of nonlinear optical effect for metallic TMDC
Authors:
Ren Habara,
Katsunori Wakabayashi
Abstract:
Nonlinear optical (NLO) effect plays a crucial role to engineer optical angular frequency and symmetry of electronic system. Metallic transition-metal dichalcogenide (TMDC) is one of two-dimensional (2D) materials, which has no inversion symmetry for odd-number-layer. In particular, odd-number-layered NbSe$_2$ has spin splitting owing to Ising-type spin-orbit coupling. In this paper, we numericall…
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Nonlinear optical (NLO) effect plays a crucial role to engineer optical angular frequency and symmetry of electronic system. Metallic transition-metal dichalcogenide (TMDC) is one of two-dimensional (2D) materials, which has no inversion symmetry for odd-number-layer. In particular, odd-number-layered NbSe$_2$ has spin splitting owing to Ising-type spin-orbit coupling. In this paper, we numerically calculate the NLO charge and spin conductivities of NbSe$_2$ based on an effective tight-binding model for several different optical effects, i.e., symmetry manipulation by bi-circular light (BCL) and bulk photovoltaic effect (shift and injection current). Under irradiation of BCL which can control the symmetry of electronic system, the current can be generated even in even-number-layered NbSe$_2$. Also, we find that shift current can be generated for odd-number-layered NbSe$_2$, which is robust against electronic scattering, i.e., topological current. The direction of generated shift current can be switched by altering polarization of light. Our results will serve to design opt-spintronics devices based on 2D materials to manipulate the charge and spin current and their directions by controlling the polarization of incident light which recasts the symmetry of electronic system.
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Submitted 23 March, 2023;
originally announced March 2023.
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Stoichiometric growth of SrTiO3 films via Bayesian optimization with adaptive prior mean
Authors:
Yuki K. Wakabayashi,
Takuma Otsuka,
Yoshiharu Krockenberger,
Hiroshi Sawada,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
Perovskite insulator SrTiO3 is expected to be applied to the next generation of electronic and photonic devices as high-k capacitors and photocatalysts. However, reproducible growth of highly insulating stoichiometric SrTiO3 films remains challenging due to the difficulty of the precise stoichiometry control in perovskite oxide films. Here, to grow stoichiometric SrTiO3 thin films by fine-tuning m…
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Perovskite insulator SrTiO3 is expected to be applied to the next generation of electronic and photonic devices as high-k capacitors and photocatalysts. However, reproducible growth of highly insulating stoichiometric SrTiO3 films remains challenging due to the difficulty of the precise stoichiometry control in perovskite oxide films. Here, to grow stoichiometric SrTiO3 thin films by fine-tuning multiple growth conditions, we developed a new Bayesian optimization (BO)-based machine learning method that encourages the exploration of the search space by varying the prior mean to get out of suboptimal growth condition parameters. Using simulated data, we demonstrate the efficacy of the new BO method, which reproducibly reaches the global best conditions. With the BO method implemented in machine-learning-assisted molecular beam epitaxy (ML-MBE), highly insulating stoichiometric SrTiO3 film with no absorption in the band gap was developed in only 44 MBE growth runs. The proposed algorithm provides an efficient experimental design platform that is not as dependent on the experience of individual researchers and will accelerate not only oxide electronics but also various material syntheses.
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Submitted 1 March, 2023;
originally announced March 2023.
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Scattering-dependent transport of SrRuO3 films: From Weyl fermion transport to hump-like Hall effect anomaly
Authors:
Shingo Kaneta-Takada,
Yuki K. Wakabayashi,
Yoshiharu Krockenberger,
Hiroshi Irie,
Shinobu Ohya,
Masaaki Tanaka,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-like Hall effect anomaly, which might have a topological origin, has also been reported for this material. Here, we show that the emergence of such phenomena is governed by the degree of scattering determined by the defe…
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Recent observation of quantum transport phenomena of Weyl fermions has brought much attention to 4d ferromagnetic perovskite SrRuO3 as a magnetic Weyl semimetal. Besides, the hump-like Hall effect anomaly, which might have a topological origin, has also been reported for this material. Here, we show that the emergence of such phenomena is governed by the degree of scattering determined by the defect density (Ru-deficiency- and/or interface-driven-defect scattering) and measurement temperature (phonon scattering), where the former is controlled by varying the growth conditions of the SrRuO3 films in molecular beam epitaxy as well as the film thickness. The resulting electronic transport properties can be classified into three categories: clean, intermediate, and dirty regimes. The transport of Weyl fermions emerges in the clean regime, whereas that of topologically trivial conduction electrons in the ferromagnetic metal state prevail in the intermediate and dirty regimes. In the clean and intermediate regimes, anomalous Hall resistivity obeys a scaling law incorporating the intrinsic Karplus-Luttinger (Berry phase) and extrinsic side-jump mechanisms. The hump-like Hall effect anomaly is observed only in the dirty regime, which is contrary to the scaling law between anomalous Hall resistivity and longitudinal resistivity. Hence, we conclude that this anomaly is not inherent to the material and does not have a topological origin. We also provide defect- and temperature-dependent transport phase diagrams of stoichiometric SrRuO3 and Ru-deficient SrRu0.7O3 where the appearance of Weyl fermions and hump-like Hall effect anomaly are mapped. These diagrams may serve as a guideline for designing SrRu1-xO3-based spintronic and topological electronic devices.
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Submitted 9 February, 2023;
originally announced February 2023.
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Origin of magnetically dead layers in spinel ferrites $M\text{Fe}_2\text{O}_4$ grown on $\text{Al}_2\text{O}_3$: Effects of post-deposition annealing studied by XMCD
Authors:
Yosuke Nonaka,
Yuki K. Wakabayashi,
Goro Shibata,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Arata Tanaka,
Masaaki Tanaka,
Atsushi Fujimori
Abstract:
We study the electronic and magnetic states of as-grown and annealed $M\text{Fe}_2\text{O}_4$(111)/$\text{Al}_2\text{O}_3$(111) ($M=\text{Co, Ni}$) thin films with various thicknesses grown on Si(111) substrates with the $γ$-$\text{Al}_2\text{O}_3$(111) buffer layers by using x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD), to investigate magnetically dead layers i…
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We study the electronic and magnetic states of as-grown and annealed $M\text{Fe}_2\text{O}_4$(111)/$\text{Al}_2\text{O}_3$(111) ($M=\text{Co, Ni}$) thin films with various thicknesses grown on Si(111) substrates with the $γ$-$\text{Al}_2\text{O}_3$(111) buffer layers by using x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD), to investigate magnetically dead layers in these films. Although the magnetically dead layers in the as-grown samples are formed near the interface with the $\text{Al}_2\text{O}_3$ buffer layer, we reveal that ferrimagnetic order is partially recovered by post-deposition annealing at 973 K for 48 hours in air. By analyzing the line shapes of the XAS and XMCD spectra, we conclude that, in the dead layers, there are a significant number of vacancies at the $T_d$ sites of the spinel structure, which may be the microscopic origin of the degraded ferrimagnetic order in the $M\text{Fe}_2\text{O}_4$(111) thin films.
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Submitted 5 February, 2023;
originally announced February 2023.
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Enhanced valley polarization of graphene on hBN under circularly polarized light irradiation
Authors:
Keisuke Nakagahara,
Katsunori Wakabayashi
Abstract:
Graphene on hBN (G/hBN) has a long period moiré superstructure owing to the lattice mismatch between two materials. Long periodic potential caused by the moiré superstructure induces modulation of electronic properties of the system. In this paper, we numerically calculate optical conductivity of G/hBN under circularly polarized light irradiation. The lack of spatial inversion symmetry in G/hBN in…
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Graphene on hBN (G/hBN) has a long period moiré superstructure owing to the lattice mismatch between two materials. Long periodic potential caused by the moiré superstructure induces modulation of electronic properties of the system. In this paper, we numerically calculate optical conductivity of G/hBN under circularly polarized light irradiation. The lack of spatial inversion symmetry in G/hBN induces the valley polarization. In further, the valley polarization becomes most pronounced in the infrared and terahertz regions if the twist angle between two materials is close to zero for non-doping case, however, insensitive with twist angle for hole-doped case. These results will serve to design the valleytronics devices using G/hBN.
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Submitted 28 July, 2022;
originally announced July 2022.
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Isotropic orbital magnetic moments in magnetically anisotropic SrRuO3 films
Authors:
Yuki K. Wakabayashi,
Masaki Kobayashi,
Yukiharu Takeda,
Miho Kitamura,
Takahito Takeda,
Ryo Okano,
Yoshiharu Krockenberger,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic…
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Epitaxially strained SrRuO3 films have been a model system for understanding the magnetic anisotropy in metallic oxides. In this paper, we investigate the anisotropy of the Ru 4d and O 2p electronic structure and magnetic properties using high-quality epitaxially strained (compressive and tensile) SrRuO3 films grown by machine-learning-assisted molecular beam epitaxy. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The magnetization curves for the Ru 4d and O 2p magnetic moments are identical, irrespective of the strain type, indicating the strong magnetic coupling between the Ru and O ions. The electronic structure and the orbital magnetic moment relative to the spin magnetic moment are isotropic despite the perpendicular and in-plane magnetic anisotropy in the compressive-strained and tensile-strained SrRuO3 films; i.e., the orbital magnetic moments have a negligibly small contribution to the magnetic anisotropy. This result contradicts Bruno model, where magnetic anisotropy arises from the difference in the orbital magnetic moment between the perpendicular and in-plane directions. Contributions of strain-induced electric quadrupole moments to the magnetic anisotropy are discussed, too.
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Submitted 13 May, 2022;
originally announced May 2022.
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Bayesian optimization with experimental failure for high-throughput materials growth
Authors:
Yuki K. Wakabayashi,
Takuma Otsuka,
Yoshiharu Krockenberger,
Hiroshi Sawada,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
A crucial problem in achieving innovative high-throughput materials growth with machine learning and automation techniques, such as Bayesian optimization (BO) and robotic experimentation, has been a lack of an appropriate way to handle missing data due to experimental failures. Here, we propose a new BO algorithm that complements the missing data in the optimization of materials growth parameters.…
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A crucial problem in achieving innovative high-throughput materials growth with machine learning and automation techniques, such as Bayesian optimization (BO) and robotic experimentation, has been a lack of an appropriate way to handle missing data due to experimental failures. Here, we propose a new BO algorithm that complements the missing data in the optimization of materials growth parameters. The proposed method provides a flexible optimization algorithm capable of searching a wide multi-dimensional parameter space. We demonstrate the effectiveness of the method with simulated data as well as in its implementation for actual materials growth, namely machine-learning-assisted molecular beam epitaxy (ML-MBE) of SrRuO3, which is widely used as a metallic electrode in oxide electronics. Through the exploitation and exploration in a wide three-dimensional parameter space, while complementing the missing data, we attained tensile-strained SrRuO3 film with a high residual resistivity ratio of 80.1, the highest among tensile-strained SrRuO3 films ever reported, in only 35 MBE growth runs.
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Submitted 11 April, 2022;
originally announced April 2022.
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Nonlinear optical Hall effect of few-layered NbSe2
Authors:
Ren Habara,
Katsunori Wakabayashi
Abstract:
NbSe$_2$ is one of metallic two-dimensional (2D) transition-metal dichalcogenide (TMDC) materials. Because of broken crystal inversion symmetry, large spin splitting is induced by Ising-type spin-orbit coupling in odd-number-layered NbSe$_2$, but absent for even-number-layered NbSe$_2$ with the inversion symmetry. In this paper, we numerically calculate nonlinear optical charge and spin Hall condu…
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NbSe$_2$ is one of metallic two-dimensional (2D) transition-metal dichalcogenide (TMDC) materials. Because of broken crystal inversion symmetry, large spin splitting is induced by Ising-type spin-orbit coupling in odd-number-layered NbSe$_2$, but absent for even-number-layered NbSe$_2$ with the inversion symmetry. In this paper, we numerically calculate nonlinear optical charge and spin Hall conductivities of few-layered NbSe$_2$ based on an effective tight-binding model which includes $d_{z^2}$, $d_{x^2-y^2}$ and $d_{xy}$ orbitals of Nb atom. We show that the nonlinear optical Hall conductivity for second harmonic generation (SHG) process has nonvanishing value in odd-number-layered NbSe$_2$. Also, we provide nonlinear optical selection rule in few-layered NbSe$_2$ and their polarization dependences. In further, for even-number-layered case, the nonlinear optical Hall currents can be generated by applying electric fields which break inversion symmetry. We also discuss that the nonlinear optical Hall effect is expected to occur in TMDC materials in general. Thus, our results will serve to design potential opt-spintronics devices based on 2D materials to generate the spin Hall current by SHG.
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Submitted 23 March, 2022;
originally announced March 2022.
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Additive rule of real and reciprocal space topologies at disclinations
Authors:
Qinghua He,
Jinhua Sun,
Hai-Yao Deng,
Katsunori Wakabayashi,
Feng Liu
Abstract:
Topological materials are renowned for their ability to harbor states localized at their peripheries, such as surfaces, edges, and corners. Accompanying these states, fractional charges appear on peripheral unit cells. Recently, topologically bound states and fractional charges at disclinations of crystalline defects have been theoretically predicted. This so-called bulk-disclination correspondenc…
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Topological materials are renowned for their ability to harbor states localized at their peripheries, such as surfaces, edges, and corners. Accompanying these states, fractional charges appear on peripheral unit cells. Recently, topologically bound states and fractional charges at disclinations of crystalline defects have been theoretically predicted. This so-called bulk-disclination correspondence has been experimentally confirmed in artificial crystalline structures, such as microwave-circuit arrays and photonic crystals. Here, we demonstrate an additive rule between the real-space topological invariant $\mathbf{s}$ (related to the Burgers vector $\mathbf{B}$) and the reciprocal-space topological invariant $\mathbf{p}$ (vectored Zak's phase of bulk wave functions). The bound states and fractional charges concur at a disclination center only if $\mathbf{s}+\mathbf{p}/2π$ is topologically nontrivial; otherwise, no bound state forms even if fractional charges are trapped. Besides the dissociation of fractional charges from bound states, the additive rule also dictates the existence of half-bound states extending over only half of a sample and ultra-stable bound states protected by both real-space and reciprocal-space topologies. Our results add another dimension to the ongoing study of topological matter and may germinate interesting applications.
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Submitted 19 February, 2022;
originally announced February 2022.
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Single-domain perpendicular magnetization induced by the coherent O 2p-Ru 4d hybridized state in an ultra-high-quality SrRuO3 film
Authors:
Yuki K. Wakabayashi,
Masaki Kobayashi,
Yukiharu Takeda,
Kosuke Takiguchi,
Hiroshi Irie,
Shin-ichi Fujimori,
Takahito Takeda,
Ryo Okano,
Yoshiharu Krockenberger,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission s…
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We investigated the Ru 4d and O 2p electronic structure and magnetic properties of an ultra-high-quality SrRuO3 film on SrTiO3 grown by machine-learning-assisted molecular beam epitaxy. The high itinerancy and long quantum lifetimes of the quasiparticles in the Ru 4d t2g-O 2p hybridized valence band are confirmed by observing the prominent well-screened peak in the Ru 3d core-level photoemission spectrum, the coherent peak near the Fermi energy in the valence band spectrum, and quantum oscillations in the resistivity. The element-specific magnetic properties and the hybridization between the Ru 4d and O 2p orbitals were characterized by Ru M2,3-edge and O K-edge soft X-ray absorption spectroscopy and X-ray magnetic circular dichroism measurements. The ultra-high-quality SrRuO3 film with the residual resistivity ratio of 86 shows the large orbital magnetic moment of oxygen ions induced by the strong orbital hybridization of the O 2p states with the spin-polarized Ru 4d t2g states. The film also shows single-domain perpendicular magnetization with an almost ideal remanent magnetization ratio of 0.97. These results provide detailed insights into the relevance between orbital hybridization and the perpendicular magnetic anisotropy in SrRuO3/SrTiO3 systems.
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Submitted 10 August, 2021;
originally announced August 2021.
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Reduced magnetocrystalline anisotropy of CoFe$_2$O$_4$ thin films studied by angle-dependent x-ray magnetic circular dichroism
Authors:
Yosuke Nonaka,
Yuki K. Wakabayashi,
Goro Shibata,
Shoya Sakamoto,
Keisuke Ikeda,
Zhendong Chi,
Yuxuan Wan,
Masahiro Suzuki,
Tsuneharu Koide,
Masaaki Tanaka,
Ryosho Nakane,
Atsushi Fujimori
Abstract:
Spinel-type CoFe$_2$O$_4$ is a ferrimagnetic insulator with the Néel temperature exceeding 790 K, and shows a strong cubic magnetocrystalline anisotropy (MCA) in bulk materials. However, when a CoFe$_2$O$_4$ film is grown on other materials, its magnetic properties are degraded so that so-called magnetically dead layers are expected to be formed in the interfacial region. We investigate how the ma…
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Spinel-type CoFe$_2$O$_4$ is a ferrimagnetic insulator with the Néel temperature exceeding 790 K, and shows a strong cubic magnetocrystalline anisotropy (MCA) in bulk materials. However, when a CoFe$_2$O$_4$ film is grown on other materials, its magnetic properties are degraded so that so-called magnetically dead layers are expected to be formed in the interfacial region. We investigate how the magnetic anisotropy of CoFe$_2$O$_4$ is modified at the interface of CoFe$_2$O$_4$/Al$_2$O$_3$ bilayers grown on Si(111) using x-ray magnetic circular dichroism (XMCD). We find that the thinner CoFe$_2$O$_4$ films have significantly smaller MCA values than bulk materials. The reduction of MCA is explained by the reduced number of Co$^{2+}$ ions at the $O_h$ site reported by a previous study [Y. K. Wakabayashi $\textit{et al.}$, Phys. Rev. B $\textbf{96}$, 104410 (2017)].
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Submitted 23 July, 2021;
originally announced July 2021.
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High-mobility two-dimensional carriers from surface Fermi arcs in magnetic Weyl semimetal films
Authors:
Shingo Kaneta-Takada,
Yuki K. Wakabayashi,
Yoshiharu Krockenberger,
Toshihiro Nomura,
Yoshimitsu Kohama,
Sergey A. Nikolaev,
Hena Das,
Hiroshi Irie,
Kosuke Takiguchi,
Shinobu Ohya,
Masaaki Tanaka,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
High-mobility two-dimensional carriers originating from surface Fermi arcs in magnetic Weyl semimetals are highly desired for accessing exotic quantum transport phenomena and for topological electronics applications. Here, we demonstrate high-mobility two-dimensional carriers that show quantum oscillations in magnetic Weyl semimetal SrRuO3 epitaxial films by systematic angle-dependent, high-magnet…
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High-mobility two-dimensional carriers originating from surface Fermi arcs in magnetic Weyl semimetals are highly desired for accessing exotic quantum transport phenomena and for topological electronics applications. Here, we demonstrate high-mobility two-dimensional carriers that show quantum oscillations in magnetic Weyl semimetal SrRuO3 epitaxial films by systematic angle-dependent, high-magnetic field magnetotransport experiments. The exceptionally high-quality SrRuO3 films were grown by state-of-the-art oxide thin film growth technologies driven by machine learning algorithm. The quantum oscillations for the 10-nm SrRuO3 film show a high quantum mobility of 3500 cm2/Vs, a light cyclotron mass, and two-dimensional angular dependence, which can be attributed to the surface Fermi arcs. The linear thickness dependence of the phase shift of the quantum oscillations provides evidence for the non-trivial nature of the quantum oscillations mediated by the surface Fermi arcs. In addition, at low temperatures and under magnetic fields of up to 52 T, the quantum limit of SrRuO3 manifests the chiral anomaly of the Weyl nodes. Emergence of the hitherto hidden two-dimensional Weyl states in a ferromagnetic oxide pave the way to explore novel quantum transport phenomena for topological oxide electronics.
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Submitted 22 December, 2021; v1 submitted 6 June, 2021;
originally announced June 2021.
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Valley-dependent Corner States in Honeycomb Photonic Crystal without Inversion Symmetry
Authors:
Huyen Thanh Phan,
Feng Liu,
Katsunori Wakabayashi
Abstract:
We study topological states of honeycomb photonic crystals in absence of inversion symmetry using plane wave expansion and finite element methods. The breaking of inversion symmetry in honeycomb lattice leads to contrasting topological valley indices, i.e., the valley-dependent Chern numbers in momentum space. We find that the topological corner states appear for 60$^\circ$ degree corners, but abs…
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We study topological states of honeycomb photonic crystals in absence of inversion symmetry using plane wave expansion and finite element methods. The breaking of inversion symmetry in honeycomb lattice leads to contrasting topological valley indices, i.e., the valley-dependent Chern numbers in momentum space. We find that the topological corner states appear for 60$^\circ$ degree corners, but absent for other corners, which can be understood as the sign flip of valley Chern number at the corner. Our results provide an experimentally feasible platform for exploring valley-dependent higher-order topology in photonic systems.
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Submitted 27 May, 2021;
originally announced May 2021.
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Optical induced Spin Current in Monolayer NbSe$_2$
Authors:
Ren Habara,
Katsunori Wakabayashi
Abstract:
Monolayer NbSe2 is a metallic two-dimensional (2D) transition-metal dichalcogenide material. Owing to the lattice structure and the strong atomic spin-orbit coupling (SOC) field, monolayer NbSe2 possesses Ising-type SOC which acts as effective Zeeman field, leading to the unconventional topological spin properties. In this paper, we numerically calculate spin-dependent optical conductivity of mono…
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Monolayer NbSe2 is a metallic two-dimensional (2D) transition-metal dichalcogenide material. Owing to the lattice structure and the strong atomic spin-orbit coupling (SOC) field, monolayer NbSe2 possesses Ising-type SOC which acts as effective Zeeman field, leading to the unconventional topological spin properties. In this paper, we numerically calculate spin-dependent optical conductivity of monolayer NbSe2 using Kubo formula based on an effective tight-binding model which includes $d_{z^2}$, $d_{x^2-y^2}$ and $d_{xy}$ orbitals of Nb atom. Numerical calculation indicates that the up- and down-spin have opposite sign of Hall current, so the pure spin Hall current can be generated in monolayer NbSe2 under light irradiation, owing to the topological nature of monolayer NbSe2, i.e., finite spin Berry curvature. The spin Hall angle is also evaluated. The optical induced spin Hall current can be enhanced by the electron doping and persists even at room temperature. Our results will serve to design opt-spintronics devices such as spin current harvesting by light irradiation on the basis of 2D materials.
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Submitted 6 May, 2021;
originally announced May 2021.
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Wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films
Authors:
Yuki K. Wakabayashi,
Shingo Kaneta-Takada,
Yoshiharu Krockenberger,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic…
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Epitaxial strain in 4d ferromagnet SrRuO3 films is directly linked to the physical properties through the strong coupling between lattices, electrons, and spins. It provides an excellent opportunity to tune the functionalities of SrRuO3 in electronic and spintronic devices. However, a thorough understanding of the epitaxial strain effect in SrRuO3 has remained elusive due to the lack of systematic studies. This study demonstrates wide-range epitaxial strain control of electrical and magnetic properties in high-quality SrRuO3 films. The epitaxial strain was imposed by cubic or pseudocubic perovskite substrates having a lattice mismatch of -1.6 to 2.3% with reference to bulk SrRuO3. The Poisson ratio, which describes the two orthogonal distortions due to the substrate clamping effect, is estimated to be 0.33. The Curie temperature (TC) and residual resistivity ratios of the series of films are higher than or comparable to the highest reported values for SrRuO3 on each substrate, confirming the high crystalline quality of the films. A TC of 169 K is achieved in a tensile-strained SrRuO3 film on the DyScO3 (110) substrate, which is the highest value ever reported for SrRuO3. The TC (146-169 K), magnetic anisotropy (perpendicular or in-plane magnetic easy axis), and metallic conduction (residual resistivity at 2 K of 2.10 - 373 μΩcm) of SrRuO3 are widely controlled by epitaxial strain. These results provide guidelines to design SrRuO3-based heterostructures for device applications.
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Submitted 28 January, 2021;
originally announced January 2021.
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Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3
Authors:
Yuki K. Wakabayashi,
Shingo Kaneta-Takada,
Yoshiharu Krockenberger,
Kosuke Takiguchi,
Shinobu Ohya,
Masaaki Tanaka,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
We investigate structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3 substrates. To distinguish the influence of the two types of disorders in the films, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3 thin films with various thicknesses (t = 1-60 nm) were prepared. It was found that the influence…
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We investigate structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3 substrates. To distinguish the influence of the two types of disorders in the films, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3 thin films with various thicknesses (t = 1-60 nm) were prepared. It was found that the influence of the former dominates the electrical and magnetic properties when t > 5-10 nm, while that of the latter does when t < 5-10 nm. Structural characterizations revealed that the crystallinity, in terms of the Sr and O sublattices, of SrRu0.7O3 thin films, is as high as that of the ultrahigh-quality SrRuO3 ones. The Curie temperature (TC) analysis elucidated that SrRu0.7O3 (TC = 140 K) is a material distinct from SrRuO3 (TC = 150 K). Despite the large Ru deficiency (30%), the SrRu0.7O3 films showed metallic conduction when t > 5 nm. In high-field magnetoresistance measurements, the fascinating phenomenon of Weyl fermion transport was not observed for the SrRu0.7O3 thin films irrespective of thickness, which is in contrast to the stoichiometric SrRuO3 films. The (magneto)transport properties suggest that a picture of carrier scattering due to the Ru vacancies is appropriate for SrRu0.7O3, and also that proper stoichiometry control is a prerequisite to utilizing the full potential of SrRuO3 as a magnetic Weyl semimetal and two-dimensional spin-polarized system. Nevertheless, the large tolerance in Ru composition (30 %) to metallic conduction is advantageous for some practical applications where SrRu1-xO3 is exploited as an epitaxial conducting layer.
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Submitted 13 January, 2021;
originally announced January 2021.
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Cooperative nanoparticle self-assembly and photothermal heating in a flexible plasmonic metamaterial
Authors:
Anh D. Phan,
Vu D. Lam,
Katsunori Wakabayashi
Abstract:
We theoretically investigate equilibrium behaviors and photothermal effects of a flexible plasmonic metamaterial composed of aramid nanofibers and gold nanoparticles. The fiber matrix is considered as an external field to reconfigure a nanoparticle assembly. We find that the heating process tunes particle-particle and fiber-particle interactions, which alter adsorption of nanoparticles on fiber su…
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We theoretically investigate equilibrium behaviors and photothermal effects of a flexible plasmonic metamaterial composed of aramid nanofibers and gold nanoparticles. The fiber matrix is considered as an external field to reconfigure a nanoparticle assembly. We find that the heating process tunes particle-particle and fiber-particle interactions, which alter adsorption of nanoparticles on fiber surfaces or clustering in pore spaces. Thus, it is possible to control the nanoparticle self-assembly by laser illumination. Gold nanoparticles strongly absorb radiations and efficiently dissipate absorbed energy into heat. By solving the heat transfer equation associated with an effective medium approximation, we calculate the spatial temperature rise. Remarkably, our theoretical results quantitatively agree with prior experiments. This indicates that we can ignore plasmonic coupling effects induced by particle clustering. Effects of the laser spot size and intensity on the photothermal heating are also discussed.
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Submitted 11 November, 2020;
originally announced November 2020.
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Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films
Authors:
Shingo Kaneta-Takada,
Yuki K. Wakabayashi,
Yoshiharu Krockenberger,
Shinobu Ohya,
Masaaki Tanaka,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 subst…
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The recent observation of Weyl fermions in the itinerant 4d ferromagnetic perovskite SrRuO3 points to this material being a good platform for exploring novel physics related to a pair of Weyl nodes in epitaxial heterostructures. In this letter, we report the thickness-dependent magnetotransport properties of ultra-high-quality epitaxial SrRuO3 films grown under optimized conditions on SrTiO3 substrates. Signatures of Weyl fermion transport, i.e., unsaturated linear positive magnetoresistance accompanied by a quantum oscillation having a π Berry phase, were observed in films with thicknesses as small as 10 nm. Residual resistivity increased with decreasing film thickness, indicating disorder near the interface between SrRuO3 and the SrTiO3 substrate. Since this disorder affects the magnetic and electrical properties of the films, the Curie temperature decreases and the coercive field increases with decreasing thickness. Thickness-dependent magnetotransport measurements revealed that the threshold residual resistivity ratio (RRR) to observe Weyl fermion transport is 21. These results provide guidelines for realizing quantum transport of Weyl fermions in SrRuO3 near heterointerfaces.
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Submitted 6 November, 2020;
originally announced November 2020.
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Coupling between structural relaxation and diffusion in glass-forming liquids under pressure variation
Authors:
Anh D. Phan,
Kajetan Koperwas,
Marian Paluch,
Katsunori Wakabayashi
Abstract:
We theoretically investigate structural relaxation and activated diffusion of glass-forming liquids at different pressures using both the Elastically Collective Nonlinear Langevin Equation (ECNLE) theory and molecular dynamics (MD) simulation. An external pressure restricts local motions of a single molecule within its cage and triggers the slowing down of cooperative mobility. While the ECNLE the…
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We theoretically investigate structural relaxation and activated diffusion of glass-forming liquids at different pressures using both the Elastically Collective Nonlinear Langevin Equation (ECNLE) theory and molecular dynamics (MD) simulation. An external pressure restricts local motions of a single molecule within its cage and triggers the slowing down of cooperative mobility. While the ECNLE theory and simulation generally predict a monotonic increase of the glass transition temperature and dynamic fragility with pressure, the simulation indicates a decrease of fragility as pressure above 1000 bar. The structural relaxation time is found to be linearly coupled with the inverse diffusion constant. Remarkably, this coupling is independent of compression. Theoretical calculations agree quantitatively well with simulations and are also consistent with prior works.
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Submitted 21 September, 2020;
originally announced September 2020.
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Higher-order topology in monolayer graphene
Authors:
Feng Liu,
Katsunori Wakabayashi
Abstract:
We show that monolayer graphene intrinsically hosts higher-order topological corner states, in which electrons are localized topologically at atomic sizes. The emergence of the topological corner states in graphene is due to a nontrivial product of the Zak phases for two independent directions, which can be handily calculated graphically by using the bulk wavefunctions. We give an explicit express…
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We show that monolayer graphene intrinsically hosts higher-order topological corner states, in which electrons are localized topologically at atomic sizes. The emergence of the topological corner states in graphene is due to a nontrivial product of the Zak phases for two independent directions, which can be handily calculated graphically by using the bulk wavefunctions. We give an explicit expression that indicates the existence of topological corner states for various geometric edges and corner angles. We also demonstrate the nontrivial localization nature of the topological corner states in graphene by putting an imaginary onsite potential mask.
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Submitted 17 September, 2020;
originally announced September 2020.
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Theory of pressure-induced rejuvenation and strain-hardening in metallic glasses
Authors:
Anh D. Phan,
Alessio Zaccone,
Vu D. Lam,
Katsunori Wakabayashi
Abstract:
We theoretically investigate high-pressure effects on the atomic dynamics of metallic glasses. The theory predicts compression-induced rejuvenation and the resulting strain hardening that have been recently observed in metallic glasses. Structural relaxation under pressure is mainly governed by local cage dynamics. The external pressure restricts the dynamical constraints and slows down the atomic…
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We theoretically investigate high-pressure effects on the atomic dynamics of metallic glasses. The theory predicts compression-induced rejuvenation and the resulting strain hardening that have been recently observed in metallic glasses. Structural relaxation under pressure is mainly governed by local cage dynamics. The external pressure restricts the dynamical constraints and slows down the atomic mobility. In addition, the compression induces a rejuvenated metastable state (local minimum) at a higher energy in the free energy landscape. Thus, compressed metallic glasses can rejuvenate and the corresponding relaxation is reversible. This behavior leads to strain hardening in mechanical deformation experiments. Theoretical predictions agree well with experiments.
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Submitted 24 October, 2020; v1 submitted 30 July, 2020;
originally announced July 2020.
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Enhanced solar photothermal effect of PANi fabrics with plasmonic nanostructures
Authors:
Do T. Nga,
Anh D. Phan,
Vu D. Lam,
Lilia M. Woods,
Katsunori Wakabayashi
Abstract:
The photothermal energy conversion in hanging and floating polyaniline (PANi)-cotton fabrics is investigated using a model based on the heat diffusion equation. Perfect absorption and anti-reflection of wet hanging PANi-cotton fabrics cause quick transfer of total incident light into water confining nearly 100 $\%$ of the sunlight. As a result, a hanging membrane is found to have more attractive p…
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The photothermal energy conversion in hanging and floating polyaniline (PANi)-cotton fabrics is investigated using a model based on the heat diffusion equation. Perfect absorption and anti-reflection of wet hanging PANi-cotton fabrics cause quick transfer of total incident light into water confining nearly 100 $\%$ of the sunlight. As a result, a hanging membrane is found to have more attractive properties than a floating above water fabric. We find, however, that the photothermal properties of a floating PANi-cotton membrane can greatly be enhanced by dispersing TiN nanoparticles in the water below the fabric. The calculated temperature gradients for TiN nanoparticle solutions show that the absorbed energy grows with increasing the nanoparticle density and that the photothermal process occurs mostly near the surface. The collective heating effects depend on the size and density of nanoparticles, which can further be used to modulate the photothermal process.
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Submitted 22 July, 2020;
originally announced July 2020.
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Purely in-plane ferroelectricity in monolayer SnS at room temperature
Authors:
N. Higashitarumizu,
H. Kawamoto,
C. -J. Lee,
B. -H. Lin,
F. -H. Chu,
I. Yonemori,
T. i Nishimura,
K. Wakabayashi,
W. -H. Chang,
K. Nagashio
Abstract:
2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric resistive switching for out-of-plane 2D ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer th…
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2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric resistive switching for out-of-plane 2D ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, a micrometer-size monolayer SnS is grown on mica by physical vapor deposition, and in-plane ferroelectric switching is demonstrated with a two-terminal device at room temperature (RT). SnS has been commonly regarded to exhibit the odd-even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust RT ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers. The lack of the odd-even effect probably originates from the interaction with the mica substrate, suggesting the possibility of controlling the stacking sequence of multilayer SnS, going beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a new platform for in-plane ferroelectrics.
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Submitted 18 June, 2020;
originally announced June 2020.
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Theoretical and Experimental Study of Compression Effects on Structural Relaxation of Glass-Forming Liquids
Authors:
Anh D. Phan,
Agnieszka Jedrzejowska,
Marian Paluch,
Katsunori Wakabayashi
Abstract:
We develop the elastically collective nonlinear Langevin equation theory of bulk relaxation of glass-forming liquids to investigate molecular mobility under compression conditions. The applied pressure restricts more molecular motion and therefore significantly slows-down the molecular dynamics when increasing the pressure. We quantitatively determine the temperature and pressure dependence of the…
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We develop the elastically collective nonlinear Langevin equation theory of bulk relaxation of glass-forming liquids to investigate molecular mobility under compression conditions. The applied pressure restricts more molecular motion and therefore significantly slows-down the molecular dynamics when increasing the pressure. We quantitatively determine the temperature and pressure dependence of the structural relaxation time. To validate our model, dielectric spectroscopy experiments for three rigid and non-polymeric supramolecules are carried out at ambient and elevated pressures. The numerical results quantitatively agree with experimental data.
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Submitted 22 April, 2020;
originally announced April 2020.
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Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide
Authors:
Kosuke Takiguchi,
Yuki K. Wakabayashi,
Hiroshi Irie,
Yoshiharu Krockenberger,
Takuma Otsuka,
Hiroshi Sawada,
Sergey A. Nikolaev,
Hena Das,
Masaaki Tanaka,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
Magnetic Weyl fermions, which occur in magnets, have novel transport phenomena related to pairs of Weyl nodes, and they are, of both, scientific and technological interest, with the potential for use in high-performance electronics, spintronics and quantum computing. Although magnetic Weyl fermions have been predicted to exist in various oxides, evidence for their existence in oxide materials rema…
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Magnetic Weyl fermions, which occur in magnets, have novel transport phenomena related to pairs of Weyl nodes, and they are, of both, scientific and technological interest, with the potential for use in high-performance electronics, spintronics and quantum computing. Although magnetic Weyl fermions have been predicted to exist in various oxides, evidence for their existence in oxide materials remains elusive. SrRuO3, a 4d ferromagnetic metal often used as an epitaxial conducting layer in oxide heterostructures, provides a promising opportunity to seek for the existence of magnetic Weyl fermions. Advanced oxide thin film preparation techniques, driven by machine learning technologies, may allow access to such topological matter. Here we show direct quantum transport evidence of magnetic Weyl fermions in an epitaxial ferromagnetic oxide SrRuO3: unsaturated linear positive magnetoresistance (MR), chiral-anomaly-induced negative MR, Pi Berry phase accumulated along cyclotron orbits, light cyclotron masses and high quantum mobility of about 10000 cm2/Vs. We employed machine-learning-assisted molecular beam epitaxy (MBE) to synthesize SrRuO3 films whose quality is sufficiently high to probe their intrinsic quantum transport properties. We also clarified the disorder dependence of the transport of the magnetic Weyl fermions, and provided a brand-new diagram for the Weyl transport, which gives a clear guideline for accessing the topologically nontrivial transport phenomena. Our results establish SrRuO3 as a magnetic Weyl semimetal and topological oxide electronics as a new research field.
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Submitted 26 July, 2020; v1 submitted 2 April, 2020;
originally announced April 2020.
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Structural Relaxation Time and Dynamic Shear Modulus of Glassy Graphene
Authors:
Tran Dinh Cuong,
Anh D. Phan,
Katsunori Wakabayashi,
Pham Thanh Huy
Abstract:
We theoretically investigate glass transition behaviors of the glassy graphene in a wide range of temperature, where this amorphous graphene is described as a hard-sphere fluid. The dynamic arrest of a particle is assumingly caused by interactions with its nearest neighbors and surrounding fluid particles. The assumption allows us to analyze roles of local and collective particle mobility. We calc…
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We theoretically investigate glass transition behaviors of the glassy graphene in a wide range of temperature, where this amorphous graphene is described as a hard-sphere fluid. The dynamic arrest of a particle is assumingly caused by interactions with its nearest neighbors and surrounding fluid particles. The assumption allows us to analyze roles of local and collective particle mobility. We calculate the temperature dependence of structural relaxation time and dynamic shear modulus, the dynamic fragility, and the glass transition temperature. In addition, correlations between these physical quantities are comprehensively discussed. Our theoretical calculations agree quantitatively well with recent simulations and Dyre's shoving model.
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Submitted 9 March, 2020;
originally announced March 2020.
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Momentum selective optical absorption in triptycene molecular membrane
Authors:
Masashi Akita,
Yasumaru Fujii,
Mina Maruyama,
Susumu Okada,
Katsunori Wakabayashi
Abstract:
The optical properties of triptycene molecular membranes (TMMs) under the linearly and circularly polarized light irradiation have been theoretically studied. Since TMMs have the double-layered Kagome lattice structures for their $π$-electrons, i.e., tiling of trigonal and hexagonal-symmetric rings, the electronic band structures of TMMs have non-equivalent Dirac cones and perfect flat bands. By c…
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The optical properties of triptycene molecular membranes (TMMs) under the linearly and circularly polarized light irradiation have been theoretically studied. Since TMMs have the double-layered Kagome lattice structures for their $π$-electrons, i.e., tiling of trigonal and hexagonal-symmetric rings, the electronic band structures of TMMs have non-equivalent Dirac cones and perfect flat bands. By constructing the tight-binding model to describe the pi-electronic states of TMMs, we have evaluated the optical absorption intensities and valley selective excitation of TMMs based on the Kubo formula. It is found that absorption intensities crucially depend on both light polarization angle and the excitation position in momentum space, i.e., the momentum and valley selective optical excitation. The polarization dependence and optical selection rules are also clarified by using group theoretical analyses.
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Submitted 8 February, 2020;
originally announced February 2020.
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Molecular relaxations in supercooled liquid and glassy states of amorphous gambogic acid: dielectric spectroscopy, calorimetry and theoretical approach
Authors:
Anh D. Phan,
Tran Thi Thu Thuy,
Nguyen Thi Kim An,
Justyna Knapik-Kowalczuk,
Marian Paluch,
Katsunori Wakabayashi
Abstract:
The relaxation dynamics and thermodynamic properties of supercooled and glassy gambogic acid are investigated using both theory and experiment. We measure the temperature dependence of the relaxation times in three polymorphs (alpha-, beta-, and gamma-form). To gain insight into the relaxation processes, we propose a theoretical approach to quantitatively understand nature of these three relaxatio…
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The relaxation dynamics and thermodynamic properties of supercooled and glassy gambogic acid are investigated using both theory and experiment. We measure the temperature dependence of the relaxation times in three polymorphs (alpha-, beta-, and gamma-form). To gain insight into the relaxation processes, we propose a theoretical approach to quantitatively understand nature of these three relaxations. The alpha-relaxation captures cooperative motions of molecules while the beta-process is mainly governed by local dynamics of a single molecule within the cage formed by its nearest neighbors. Based on quantitative agreement between theory and experimental data, our calculations clearly indicate that the beta-process is a precursor of the structural relaxation and intramolecular motions are responsible for the gamma-relaxation. Moreover, the approach is exploited to study effects of the heating process on alpha relaxation. We find that the heating rate varies logarithmically with Tg and 1000/Tg. These variations are qualitatively consistent with many prior studies.
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Submitted 1 February, 2020;
originally announced February 2020.
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Effects of Mid-infrared Graphene Plasmons on Photothermal Heating
Authors:
Anh D. Phan,
Do T. Nga,
Do C. Nghia,
Vu D. Lam,
Katsunori Wakabayashi
Abstract:
We theoretically investigate the plasmonic heating of graphene-based systems under the mid-infrared laser irradiation, where periodic arrays of graphene plasmonic resonators are placed on dielectric thin films. Optical resonances are sensitive to structural parameters and the number of graphene layers. Under mid-infrared laser irradiation, the steady-state temperature gradients are calculated. We…
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We theoretically investigate the plasmonic heating of graphene-based systems under the mid-infrared laser irradiation, where periodic arrays of graphene plasmonic resonators are placed on dielectric thin films. Optical resonances are sensitive to structural parameters and the number of graphene layers. Under mid-infrared laser irradiation, the steady-state temperature gradients are calculated. We find that graphene plasmons significantly enhance the confinement of electromagnetic fields in the system and lead to a large temperature rise compared to the case without graphene. The correlations between temperature change and the optical power, laser spot, and thermal conductivity of dielectric layer in these systems are discussed. Our numerical results are in accordance with experiments.
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Submitted 16 December, 2019;
originally announced December 2019.
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Effects of Cooling Rate on Structural Relaxation in Amorphous Drugs: Elastically Collective Nonlinear Langevin Equation Theory and Machine Learning Study
Authors:
Anh D. Phan,
Katsunori Wakabayashi,
Marian Paluch,
Vu D. Lam
Abstract:
Theoretical approaches are formulated to investigate the molecular mobility under various cooling rates of amorphous drugs. We describe the structural relaxation of a tagged molecule as a coupled process of cage-scale dynamics and collective molecular rearrangement beyond the first coordination shell. The coupling between local and non-local dynamics behaves distinctly in different substances. The…
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Theoretical approaches are formulated to investigate the molecular mobility under various cooling rates of amorphous drugs. We describe the structural relaxation of a tagged molecule as a coupled process of cage-scale dynamics and collective molecular rearrangement beyond the first coordination shell. The coupling between local and non-local dynamics behaves distinctly in different substances. Theoretical calculations for the structural relaxation time, glass transition temperature, and dynamic fragility are carried out over twenty-two amorphous drugs and polymers. Numerical results have a quantitatively good accordance with experimental data and the extracted physical quantities using the Vogel-Fulcher-Tammann fit function and machine learning. The machine learning method reveals the linear relation between the glass transition temperature and the melting point, which is a key factor for pharmaceutical solubility. Our predictive approaches are reliable tools for developing drug formulation.
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Submitted 7 December, 2019;
originally announced December 2019.
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Characterization of in-gap states in epitaxial CoFe2O4(111) layers grown on Al2O3(111)/Si(111) by resonant inelastic x-ray scattering
Authors:
Yuki K. Wakabayashi,
Takashi Tokushima,
Kentaro Kuga,
Hiroshi Yomosa,
Masaki Oura,
Hidenori Fujiwara,
Tetsuya Ishikawa,
Masaaki Tanaka,
Takayuki Kiss,
Ryosho Nakane
Abstract:
We have studied in-gap states in epitaxial CoFe2O4(111), which potentially acts as a perfect spin filter, grown on a Al2O3(111)/Si(111) structure by using ellipsometry, Fe L2,3-edge x-ray absorption spectroscopy (XAS), and Fe L2,3-edge resonant inelastic x-ray scattering (RIXS), and revealed the relation between the in-gap states and chemical defects due to the Fe2+ cations at the octahedral sites…
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We have studied in-gap states in epitaxial CoFe2O4(111), which potentially acts as a perfect spin filter, grown on a Al2O3(111)/Si(111) structure by using ellipsometry, Fe L2,3-edge x-ray absorption spectroscopy (XAS), and Fe L2,3-edge resonant inelastic x-ray scattering (RIXS), and revealed the relation between the in-gap states and chemical defects due to the Fe2+ cations at the octahedral sites (Fe2+ (Oh) cations). The ellipsometry measurements showed the indirect band gap of 1.24 eV for the CoFe2O4 layer and the Fe L2,3-edge XAS confirmed the characteristic photon energy for the preferential excitation of the Fe2+ (Oh) cations. In the Fe L3-edge RIXS spectra, a band-gap excitation and an excitation whose energy is smaller than the band-gap energy (Eg = 1.24 eV) of CoF2O4, which we refer to as "below-band-gap excitation (BBGE)" hereafter, were observed. The intensity of the BBGE was strengthened at the preferential excitation energy of the Fe2+ (Oh) cations. In addition, the intensity of the BBGE was significantly increased when the thickness of the CoFe2O4 layer was decreased from 11 to 1.4 nm, which coincides with the increase in the site occupancy of the Fe2+ (Oh) cations with decreasing the thickness. These results indicate that the BBGE comes from the in-gap states of the Fe2+ (Oh) cations whose density increases near the heterointerface on the bottom Al2O3 layer. We have demonstrated that RIXS measurements and analyses in combination with ellipsometry and XAS are effective to provide an insight into in-gap states in thin-film oxide heterostructures.
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Submitted 13 October, 2019;
originally announced October 2019.
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An epitaxial graphene platform for zero-energy edge state nanoelectronics
Authors:
Vladimir S. Prudkovskiy,
Yiran Hu,
Yue Hu,
Kaimin Zhang,
Peixuan Ji,
Grant Nunn,
Jian Zhao,
Chenqian Shi,
Antonio Tejeda,
David Wander,
Alessandro De Cecco,
Clemens B. Winkelmann,
Yuxuan Jiang,
Tianhao Zhao,
Katsunori Wakabayashi,
Zhigang Jiang,
Lei Ma,
Claire Berger,
Walt A. de Heer
Abstract:
Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge…
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Graphene's original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater that the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon-ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
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Submitted 25 October, 2022; v1 submitted 8 October, 2019;
originally announced October 2019.
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Confinement effect on solar thermal heating process of TiN solutions
Authors:
Anh D. Phan,
Nam B. Le,
Nghiem T. H. Lien,
Lilia M. Woods,
Satoshi Ishi,
Katsunori Wakabayashi
Abstract:
We propose a theoretical approach to describe quantitatively the heating process in aqueous solutions of dispersed TiN nanoparticles under solar illumination. The temperature gradients of solution with different concentrations of TiN nanoparticles are calculated when confinement effects of the container on the solar absorption are taken into account. We find that the average penetration of solar r…
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We propose a theoretical approach to describe quantitatively the heating process in aqueous solutions of dispersed TiN nanoparticles under solar illumination. The temperature gradients of solution with different concentrations of TiN nanoparticles are calculated when confinement effects of the container on the solar absorption are taken into account. We find that the average penetration of solar radiation into the solution is significantly reduced with increasing the nanoparticle concentration. At high concentrations, our numerical results show that photons are localized near the surface of the solution. Moreover, the heat energy balance equation at the vapor-liquid interface is used to describe the solar steam generation. The theoretical time dependence of temperature rise and vaporization weight losses is consistent with experiments. Our calculations give strong evidence that the substantially localized heating near the vapor-liquid interface is the main reason for the more efficient steam generation process by floating plasmonic membranes when compared to randomly dispersed nanoparticles. The validated theoretical model suggests that our approach can be applied towards new predictions and other experimental data descriptions.
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Submitted 18 August, 2019;
originally announced August 2019.
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Machine-learning-assisted thin-film growth: Bayesian optimization in molecular beam epitaxy of SrRuO3 thin films
Authors:
Yuki K. Wakabayashi,
Takuma Otsuka,
Yoshiharu Krockenberger,
Hiroshi Sawada,
Yoshitaka Taniyasu,
Hideki Yamamoto
Abstract:
Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular beam epitaxy (MBE) of SrRuO3, one of the most-intensively studied materials in th…
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Materials informatics exploiting machine learning techniques, e.g., Bayesian optimization (BO), has the potential to offer high-throughput optimization of thin-film growth conditions through incremental updates of machine learning models in accordance with newly measured data. Here, we demonstrated BO-based molecular beam epitaxy (MBE) of SrRuO3, one of the most-intensively studied materials in the research field of oxide electronics, mainly owing to its unique nature as a ferromagnetic metal. To simplify the intricate search space of entangled growth conditions, we ran the BO for a single condition while keeping the other conditions fixed. As a result, high-crystalline-quality SrRuO3 film exhibiting a high residual resistivity ratio (RRR) of over 50 as well as strong perpendicular magnetic anisotropy was developed in only 24 MBE growth runs in which the Ru flux rate, growth temperature, and O3-nozzle-to-substrate distance were optimized. Our BO-based search method provides an efficient experimental design that is not as dependent on the experience and skills of individual researchers, and it reduces experimental time and cost, which will accelerate materials research.
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Submitted 2 August, 2019;
originally announced August 2019.