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Surface spin polarization of the non-stoichiometric Heusler compound Co2Mn(alpha)Si
Authors:
Jan-Peter Wüstenberg,
Mirko Cinchetti,
Martin Aeschlimann,
Jan Minár,
Jürgen Braun,
Hubert Ebert,
Takayuki Ishikawa,
Tetsuya Uemura,
Masafumi Yamamoto
Abstract:
Using a combined approach of spin-resolved photoemission spectroscopy, band structure and photoemission calculations we investigate the influence of bulk defects and surface states on the spin polarization of Co2Mn(alpha)Si thin films with bulk L21 order. We find that for Mn-poor alloys the spin polarization at EF is negative due to the presence of Co_Mn antisite and minority surface state contrib…
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Using a combined approach of spin-resolved photoemission spectroscopy, band structure and photoemission calculations we investigate the influence of bulk defects and surface states on the spin polarization of Co2Mn(alpha)Si thin films with bulk L21 order. We find that for Mn-poor alloys the spin polarization at EF is negative due to the presence of Co_Mn antisite and minority surface state contributions. In Mn-rich alloys, the suppression of Co(Mn) antisites leads to a positive spin polarization at the Fermi energy, and the influence of minority surface states on the photoelectron spin polarization is reduced.
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Submitted 28 October, 2011; v1 submitted 25 October, 2011;
originally announced October 2011.
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Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction
Authors:
Jan-Peter Wüstenberg,
Takayuki Ishikawa,
Masafumi Yamamoto,
Christian Herbort,
Martin Jourdan,
Martin Aeschlimann,
Mirko Cinchetti
Abstract:
The performance of Heusler based magnetoresistive multilayer devices depends crucially on the spin polarization and thus on the structural details of the involved surfaces. Using low energy electron diffraction (LEED), one can non-destructively distinguish between important surface terminations of Co2XY full-Heusler alloys. We present an analysis of the LEED patterns of the Y-Z ,the vacancy-Z, t…
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The performance of Heusler based magnetoresistive multilayer devices depends crucially on the spin polarization and thus on the structural details of the involved surfaces. Using low energy electron diffraction (LEED), one can non-destructively distinguish between important surface terminations of Co2XY full-Heusler alloys. We present an analysis of the LEED patterns of the Y-Z ,the vacancy-Z, the Co and the disordered B2 and A2 terminations. As an example, we show that the surface geometries of bulk L21 ordered Co2MnSi and bulk B2 disordered Co2Cr0.6Fe0.4Al can be determined by comparing the experimental LEED patterns with the presented reference patterns.
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Submitted 18 December, 2009; v1 submitted 26 October, 2009;
originally announced October 2009.
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Towards a full Heusler alloy showing room temperature half-metallicity at the surface
Authors:
M. Cinchetti,
J. -P. Wüstenberg,
M. Sánchez Albaneda,
F. Steeb,
A. Conca,
M. Jourdan,
M. Aeschlimann
Abstract:
In this article we investigate the surface spin polarization in a 100 nm Co2Cr0.6Fe0.4Al (CCFA) film grown ex situ epitaxially on MgO(100) with a 10 nm Fe buffer layer by means of spin resolved photoemission. We show that a careful in situ preparation of the sample surface leads to values for the room temperature spin polarization up to 45% at the Fermi level. To our knowledge, this is the highe…
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In this article we investigate the surface spin polarization in a 100 nm Co2Cr0.6Fe0.4Al (CCFA) film grown ex situ epitaxially on MgO(100) with a 10 nm Fe buffer layer by means of spin resolved photoemission. We show that a careful in situ preparation of the sample surface leads to values for the room temperature spin polarization up to 45% at the Fermi level. To our knowledge, this is the highest value measured so far at the surface region of a full Heusler alloy at room temperature.
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Submitted 20 September, 2006;
originally announced September 2006.
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Spin- and time-resolved photoemission studies of thin Co2FeSi Heusler alloy films
Authors:
J. -P. Wüstenberg,
M. Cinchetti,
M. Sánchez Albaneda,
M. Bauer,
M. Aeschlimann
Abstract:
We have studied the possibly half metallic Co2FeSi full Heusler alloy by means of spin- and time-resolved photoemission spectroscopy. For excitation, the second and fourth harmonic of femtosecond Ti:sapphire lasers were used, with photon energies of 3.1 eV and 5.9 eV, respectively. We compare the dependence of the measured surface spin polarization on the particular photoemission mechanism, i.e.…
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We have studied the possibly half metallic Co2FeSi full Heusler alloy by means of spin- and time-resolved photoemission spectroscopy. For excitation, the second and fourth harmonic of femtosecond Ti:sapphire lasers were used, with photon energies of 3.1 eV and 5.9 eV, respectively. We compare the dependence of the measured surface spin polarization on the particular photoemission mechanism, i.e. 1-photon-photoemission (1PPE) or 2-photon photoemission (2PPE). The observed differences in the spin polarization can be explained by a spin-dependent lifetime effect occurring in the 2-photon absorption process. The difference in escape depth of the two methods in this context suggests that the observed reduction of spin polarization (compared to the bulk) cannot be attributed just to the outermost surface layer but takes place at least 4-6 nm away from the surface.
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Submitted 31 May, 2006;
originally announced June 2006.
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Spin-flip processes and ultrafast magnetization dynamics in Co - unifying the microscopic and macroscopic view of femtosecond magnetism
Authors:
M. Cinchetti,
M. Sánchez Albaneda,
D. Hoffmann,
T. Roth,
J. -P. Wüstenberg,
M. Krauß,
O. Andreyev,
H. C. Schneider,
M. Bauer,
M. Aeschlimann
Abstract:
The femtosecond magnetization dynamics of a thin cobalt film excited with ultrashort laser pulses has been studied using two complementary pump-probe techniques, namely spin-, energy- and time-resolved photoemission and time-resolved magneto-optical Kerr effect. Combining the two methods it is possible to identify the microscopic electron spin-flip mechanisms responsible for the ultrafast macros…
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The femtosecond magnetization dynamics of a thin cobalt film excited with ultrashort laser pulses has been studied using two complementary pump-probe techniques, namely spin-, energy- and time-resolved photoemission and time-resolved magneto-optical Kerr effect. Combining the two methods it is possible to identify the microscopic electron spin-flip mechanisms responsible for the ultrafast macroscopic magnetization dynamics of the cobalt film. In particular, we show that electron-magnon excitation does not affect the overall magnetization even though it is an efficient spin-flip channel on the sub-200 fs timescale. Instead we find experimental evidence for the relevance of Elliott-Yafet type spin-flip processes for the ultrafast demagnetization taking place on a time scale of 300 fs.
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Submitted 3 October, 2006; v1 submitted 10 May, 2006;
originally announced May 2006.
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Energy-resolved electron-spin dynamics at surfaces of p-doped GaAs
Authors:
H. C. Schneider,
J. -P. Wuestenberg,
O. Andreyev,
K. Hiebbner,
L. Guo,
J. Lange,
L. Schreiber,
B. Beschoten,
M. Bauer,
M. Aeschlimann
Abstract:
Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface…
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Electron-spin relaxation at different surfaces of p-doped GaAs is investigated by means of spin, time and energy resolved 2-photon photoemission. These results are contrasted with bulk results obtained by time-resolved Faraday rotation measurements as well as calculations of the Bir-Aronov-Pikus spin-flip mechanism. Due to the reduced hole density in the band bending region at the (100) surface the spin-relaxation time increases over two orders of magnitude towards lower energies. At the flat-band (011) surface a constant spin relaxation time in agreement with our measurements and calculations for bulk GaAs is obtained.
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Submitted 25 August, 2005;
originally announced August 2005.
