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Current-induced spin and orbital polarization in the ferroelectric Rashba semiconductor GeTe
Authors:
Sergio Leiva-Montecinos,
Libor Vojáček,
Jing Li,
Mairbek Chshiev,
Laurent Vila,
Ingrid Mertig,
Annika Johansson
Abstract:
The Edelstein effect is a promising mechanism for generating spin and orbital polarization from charge currents in systems without inversion symmetry. In ferroelectric materials, such as Germanium Telluride (GeTe), the combination of bulk Rashba splitting and voltage-controlled ferroelectric polarization provides a pathway for electrical control of the sign of the charge-spin conversion. In this w…
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The Edelstein effect is a promising mechanism for generating spin and orbital polarization from charge currents in systems without inversion symmetry. In ferroelectric materials, such as Germanium Telluride (GeTe), the combination of bulk Rashba splitting and voltage-controlled ferroelectric polarization provides a pathway for electrical control of the sign of the charge-spin conversion. In this work, we investigate current-induced spin and orbital magnetization in bulk GeTe using Wannier-based tight-binding models derived from \textit{ab initio} calculations and semiclassical Boltzmann theory. Employing the modern theory of orbital magnetization, we demonstrate that the orbital Edelstein effect entirely dominates its spin counterpart. This difference is visualized through the spin and orbital textures at the Fermi surfaces, where the orbital moment surpasses the spin moment by one order of magnitude. Moreover, the orbital Edelstein effect remains largely unaffected in the absence of spin-orbit coupling, highlighting its distinct physical origin compared to the spin Edelstein effect.
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Submitted 27 May, 2025;
originally announced May 2025.
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Dzyaloshinskii-Moriya interaction chirality reversal with ferromagnetic thickness
Authors:
Capucine Gueneau,
Fatima Ibrahim,
Johanna Fischer,
Libor Vojáček,
Charles-Élie Fillion,
Stefania Pizzini,
Laurent Ranno,
Isabelle Joumard,
Stéphane Auffret,
Jérôme Faure-Vincent,
Claire Baraduc,
Mairbek Chshiev,
Hélène Béa
Abstract:
In ultrathin ferromagnetic films sandwiched between two distinct heavy metal layers or between a heavy metal and an oxide layer, the Dzyaloshinskii-Moriya interaction (DMI) is recognized as being of interfacial origin. Its chirality and strength are determined by the properties of the adjacent heavy metals and the degree of oxidation at the interfaces. Here, we demonstrate that the chirality of th…
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In ultrathin ferromagnetic films sandwiched between two distinct heavy metal layers or between a heavy metal and an oxide layer, the Dzyaloshinskii-Moriya interaction (DMI) is recognized as being of interfacial origin. Its chirality and strength are determined by the properties of the adjacent heavy metals and the degree of oxidation at the interfaces. Here, we demonstrate that the chirality of the DMI can change solely with variations in the thickness of the ferromagnetic layer - an effect that has not been experimentally observed or explained until now. Our experimental observation in the trilayer system Ta/FeCoB/TaOx is supported by ab initio calculations: they reveal that variations in orbital filling and inter-atomic distances at the interface, driven by the number of ferromagnetic atomic layers, lead to an inversion of DMI chirality. This mechanism takes place for ferromagnetic layers with more than three atomic layers, for which the two interfaces start to be decoupled. We hence propose a new degree of freedom to tune DMI chirality and the associated chiral spin textures by tailoring crystal structure e.g. using strain or surface acoustic waves.
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Submitted 21 January, 2025;
originally announced January 2025.
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Monolayer control of spin-charge conversion in van der Waals heterostructures
Authors:
K. Abdukayumov,
O. Paull,
M. Mičica,
F. Ibrahim,
L. Vojáček,
A. Wright,
S. Massabeau,
F. Mazzola,
V. Polewczyk,
C. Jego,
R. Sharma,
C. Vergnaud,
A. Marty,
I. Gomes de Moraes,
A. Ouerghi,
H. Okuno,
A. Jana,
I. Kar,
J. Fuji,
I. Vobornik,
J. Li,
F. Bonell,
M. Chshiev,
M. Bibes,
J. -M. George
, et al. (3 additional authors not shown)
Abstract:
The diversity of 2D materials and their van der Waals (vdW) stacking presents a fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be invest…
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The diversity of 2D materials and their van der Waals (vdW) stacking presents a fertile ground for engineering novel multifunctional materials and quantum states of matter. This permits unique opportunities to tailor the electronic properties of vdW heterostructures by the insertion of only a single 2D material layer. However, such vdW materials engineering at the atomic scale has yet to be investigated for spin-charge interconversion phenomena. Here, we report on the control of these effects at the monolayer level, where drastic increase in intensity and change in sign of THz spintronic emission are demonstrated by inserting a single layer of MoSe$_2$ between PtSe$_2$ and graphene in a fully epitaxial, large area stacked structure. By using a combination of spin and angle resolved photoemission and density functional theory to reveal the electronic and spin structures, we illustrate two different mechanisms relying on charge transfer and electronic hybridization for the formation of Rashba states, which are responsible for spin-charge conversion and hence the THz spintronic emission. These findings open new pathways to design, at the atomic scale, efficient THz spintronic emitters made of 2D materials and other spintronic devices based on spin-charge interconversion phenomena.
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Submitted 4 January, 2025;
originally announced January 2025.
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Interfacial spin-orbitronic effects controlled with different oxidation levels at the Co|Al interface
Authors:
Sachin Krishnia,
Libor Vojáček,
Tristan Da Câmara Santa Clara Gomes,
Nicolas Sebe,
Fatima Ibrahim,
Jing Li,
Luis Moreno Vicente-Arche,
Sophie Collin,
Thibaud Denneulin,
Rafal E. Dunin-Borkowski,
Philippe Ohresser,
Nicolas Jaouen,
André Thiaville,
Albert Fert,
Henri Jaffrès,
Mairbek Chshiev,
Nicolas Reyren,
Vincent Cros
Abstract:
Perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interactions are key interactions in modern spintronics. These interactions are thought to be dominated by the oxidation of the Co|Al interface in the archetypal Platinum-Cobalt-Aluminum oxide system. Here, we observe a double sign change in the anisotropy and about threefold variation in interfacial chiral interaction, influenced n…
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Perpendicular magnetic anisotropy (PMA) and Dzyaloshinskii-Moriya interactions are key interactions in modern spintronics. These interactions are thought to be dominated by the oxidation of the Co|Al interface in the archetypal Platinum-Cobalt-Aluminum oxide system. Here, we observe a double sign change in the anisotropy and about threefold variation in interfacial chiral interaction, influenced not only by the oxidation, but also by the metallic Al thickness. Contrary to previous assumptions about negligible spin-orbit effects at light metal interfaces, we not only observe strong PMA with fully oxidized Al, decreasing and turning negative (in-plane) with less oxygen at the Co|Al interface, we also observe that the magnetic anisotropy reverts to positive (out-of-plane) values at fully metallic Co|Al interface. These findings suggest modification in Co d band via Co|Al orbital hybridization, an effect supported by X-ray absorption spectroscopy and ab initio theory calculations, highlighting the key impact of strain on interfacial mechanisms at fully metallic Co|Al interface.
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Submitted 16 September, 2024;
originally announced September 2024.
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Giant Spin-Orbit Torque in Cr-based Janus Transition Metal Dichalcogenides
Authors:
Libor Vojáček,
Joaquín Medina Dueñas,
Jing Li,
Fatima Ibrahim,
Aurélien Manchon,
Stephan Roche,
Mairbek Chshiev,
José H. García
Abstract:
We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of…
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We report a very large spin-orbit torque (SOT) capability of chromium-based transition metal dichalcogenides (TMD) in their Janus forms CrXTe, with X=S,Se. The structural inversion symmetry breaking, inherent to Janus structures is responsible for a large SOT response generated by giant Rashba splitting, equivalent to that obtained by applying a transverse electric field of $\sim 100 \,\text{V} \,\text{nm}^{-1}$ in non-Janus CrTe\textsubscript{2}, completely out of experimental reach. By performing transport simulations on custom-made Wannier tight-binding models, Janus systems are found to exhibit a SOT performance comparable to the most efficient two-dimensional materials, while allowing for field-free perpendicular magnetization switching owing to their reduced in-plane symmetry. Altogether, our findings evidence that magnetic Janus TMDs stand as suitable candidates for ultimate SOT-MRAM devices.
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Submitted 23 April, 2024;
originally announced April 2024.
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Domain wall migration-mediated ferroelectric switching and Rashba effect tuning in GeTe thin films
Authors:
Libor Vojáček,
Mairbek Chshiev,
Jing Li
Abstract:
Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for future electronic devices in computing and memory applications. However, its ferroelectric switching on a microscopic scale remains to be understood. Here, we propose that the migration of a domain wall can be the mechanism that mediates the ferroelectric switching. By employing…
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Germanium Telluride (GeTe), identified as a ferroelectric Rashba semiconductor, is a promising candidate for future electronic devices in computing and memory applications. However, its ferroelectric switching on a microscopic scale remains to be understood. Here, we propose that the migration of a domain wall can be the mechanism that mediates the ferroelectric switching. By employing $ab~initio$ methods, such a mechanism is characterized by an energy barrier of $66.8$ meV/nm$^2$, in a suitable range for retention and switchability. In accompanying the domain wall migration, the net Rashba effect is tunable, as it is a result of competition between layers with opposite electric polarization. These results shed light on the ferroelectric switching mechanism in GeTe, paving stones for the design of potential GeTe-based devices.
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Submitted 20 April, 2024;
originally announced April 2024.
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Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials
Authors:
Quentin Guillet,
Libor Vojacek,
Djordje Dosenovic,
Fatima Ibrahim,
Herve Boukari,
Jing Li,
Fadi Choueikani,
Philippe Ohresser,
Abdelkarim Ouerghi,
Florie Mesple,
Vincent Renard,
Jean-Francois Jacquot,
Denis Jalabert,
Hanako Okuno,
Mairbek Chshiev,
Celine Vergnaud,
Frederic Bonell,
Alain Marty,
Matthieu Jamet
Abstract:
Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a…
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Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface.
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Submitted 6 March, 2023;
originally announced March 2023.
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Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer
Authors:
Libor Vojáček,
Fatima Ibrahim,
Ali Hallal,
Bernard Dieny,
Mairbek Chshiev
Abstract:
Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage l…
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Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands.
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Submitted 31 July, 2020;
originally announced July 2020.
