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Quasi-HfO$_x$/ AlO$_y$ and AlO$_y$/ HfO$_x$ Based Memristor Devices: Role of Bi-layered Oxides in Digital Set and Analog Reset Switching
Authors:
Pradip Basnet,
Erik Anderson,
Bhaswar Chakrabarti,
Matthew P. West,
Fabia Farlin Athena,
Eric M. Vogel
Abstract:
Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one can confirm its usefulness in non-volatile memory and/or in artificial neural networks. Although bi- or multi-layered oxides have been reported to improve the…
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Understanding the resistive switching behavior, or the resistance change, of oxide-based memristor devices, is critical to predicting their responses with known electrical inputs. Also, with the known electrical response of a memristor, one can confirm its usefulness in non-volatile memory and/or in artificial neural networks. Although bi- or multi-layered oxides have been reported to improve the switching performance, compared to the single oxide layer, the detailed explanation about why the switching can easily be improved for some oxides combinations is still missing. Herein, we fabricated two types of bi-layered heterostructure devices, quasi-HfO$_x$/AlO$_y$ and AlO$_y$/HfO$_x$ sandwiched between Au electrodes, and their electrical responses are investigated. For a deeper understanding of the switching mechanism, the performance of a HfOx only device is also considered, which serves as a control device. The role of bi-layered heterostructures is investigated using both the experimental and simulated results. Our results suggest that synergistic switching performance can be achieved with a proper combination of these materials and/or devices. These results open the avenue for designing more efficient double- or multi-layers memristor devices for an analog response.
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Submitted 2 October, 2021; v1 submitted 4 August, 2021;
originally announced August 2021.
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Substrate Dependent Resistive Switching in Amorphous-HfOx Memristors: An Experimental and Computational Investigation
Authors:
Pradip Basnet,
Darshan G Pahinkar,
Matthew P. West,
Christopher J. Perini,
Samuel Graham,
Eric M. Vogel
Abstract:
While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work, amorphous-HfOX based memristor devices on two different substrates, thin SiO2(280 nm)/Si and glass, with different thermal conductivities in the range from 1.2 to 138 W/m-K…
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While two-terminal HfOX (x<2) memristor devices have been studied for ion transport and current evolution, there have been limited reports on the effect of the long-range thermal environment on their performance. In this work, amorphous-HfOX based memristor devices on two different substrates, thin SiO2(280 nm)/Si and glass, with different thermal conductivities in the range from 1.2 to 138 W/m-K were fabricated. Devices on glass substrates exhibit lower reset voltage, wider memory window and, in turn, a higher performance window. In addition, the devices on glass show better endurance than the devices on the SiO2/Si substrate. These devices also show non-volatile multi-level resistances at relatively low operating voltages which is critical for neuromorphic computing applications. A Multiphysics COMSOL computational model is presented that describes the transport of heat, ions and electrons in these structures. The combined experimental and COMSOL simulation results indicate that the long-range thermal environment can have a significant impact on the operation of HfOx-based memristors and that substrates with low thermal conductivity can enhance switching performance.
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Submitted 1 April, 2020; v1 submitted 7 December, 2019;
originally announced December 2019.
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Quantum-statistical transport phenomena in memristive computing architectures
Authors:
Christopher N. Singh,
Brian A. Crafton,
Mathew P. West,
Alex S. Weidenbach,
Keith T. Butler,
Allan H. MacDonald,
Arjit Raychowdury,
Eric M. Vogel,
W. Alan Doolittle,
L. F. J. Piper,
Wei-Cheng Lee
Abstract:
The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave functions play a pivotal role in the nanoscale transport properties of these emerging, non-volatile memories. By characterizing both filamentary and non-filame…
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The advent of reliable, nanoscale memristive components is promising for next generation compute-in-memory paradigms, however, the intrinsic variability in these devices has prevented widespread adoption. Here we show coherent electron wave functions play a pivotal role in the nanoscale transport properties of these emerging, non-volatile memories. By characterizing both filamentary and non-filamentary memristive devices as disordered Anderson systems, the switching characteristics and intrinsic variability arise directly from the universality of electron transport in disordered media. Our framework suggests localization phenomena in nanoscale, solid-state memristive systems are directly linked to circuit level performance. We discuss how quantum conductance fluctuations in the active layer set a lower bound on device variability. This finding implies there is a fundamental quantum limit on the reliability of memristive devices, and electron coherence will play a decisive role in surpassing or maintaining Moore's Law with these systems.
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Submitted 31 May, 2021; v1 submitted 21 August, 2019;
originally announced August 2019.
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Nonlinear Raman Shift Induced by Exciton-to-Trion Transformation in Suspended Trilayer MoS2
Authors:
Hossein Taghinejad,
Mohammad Taghinejad,
Alexey Tarasov,
Meng-Yen Tsai,
Amir H. Hosseinnia,
Philip M. Campbell,
Ali A. Eftekhar,
Eric M. Vogel,
Ali Adibi
Abstract:
Layered two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted remarkable attention because of their unique physical properties. Here, we use photoluminescence (PL) and Raman spectroscopy to study the formation of the so- called trions in a synthesized freestanding trilayer MoS2. A trion is a charged quasi-particle formed by adding one electron or hole to a…
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Layered two-dimensional (2D) semiconductors such as molybdenum disulfide (MoS2) have recently attracted remarkable attention because of their unique physical properties. Here, we use photoluminescence (PL) and Raman spectroscopy to study the formation of the so- called trions in a synthesized freestanding trilayer MoS2. A trion is a charged quasi-particle formed by adding one electron or hole to a neutral exciton (a bound electron-hole pair). We demonstrate accurate control over the transformation of excitons to trions by tuning the power of the optical pump (laser). Increasing the power of the excitation laser beyond a certain threshold (~ 4 mW) allows modulation of trion-to-exciton PL intensity ratio as well as the spectral linewidth of both trions and excitons. Via a systematic and complementary Raman analysis we disclose a strong coupling between laser induced exciton-to-trion transformation and the characteristic phononic vibrations of MoS2. The onset of such an optical transformation corresponds to the onset of a previously unknown nonlinear Raman shift of the in-plane (E12g) and out-of-plane (A1g) vibrational modes. This coupling directly affects the well-known linear red-shift of the A1g and E12g vibrations due to heating at low laser powers, and changes it to a nonlinear and non-monotonic dependence with a blue-shift in the high laser power regime. Local reduction of the electron density upon exciton-to-trion transformation is found to be the underlying mechanism for the blue-shift at high laser powers. Our findings enrich our knowledge about the strong coupling of photonic and phononic properties in 2D semiconductors, and enable reliable interpretation of PL and Raman spectra in the high laser power regimes.
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Submitted 2 February, 2015;
originally announced February 2015.
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Graphene films with large domain size by a two-step chemical vapor deposition process
Authors:
Xuesong Li,
Carl W. Magnuson,
Archana Venugopal,
Jinho An,
Ji Won Suk,
Boyang Han,
Mark Borysiak,
Weiwei Cai,
Aruna Velamakanni,
Yanwu Zhu,
Lianfeng Fu,
Eric M. Vogel,
Edgar Voelkl,
Luigi Colombo,
Rodney S. Ruoff
Abstract:
The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by chemical vapor deposition (CVD) of methane on Cu foils. We also showed that graphene growth on Cu is a surface-mediated process and the films were polycrystalline…
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The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by chemical vapor deposition (CVD) of methane on Cu foils. We also showed that graphene growth on Cu is a surface-mediated process and the films were polycrystalline with domains having an area of tens of square microns. In this paper we report on the effect of growth parameters such as temperature, and methane flow rate and partial pressure on the growth rate, domain size, and surface coverage of graphene as determined by Raman spectroscopy, and transmission and scanning electron microscopy. Based on the results, we developed a two-step CVD process to synthesize graphene films with domains having an area of hundreds of square microns. Scanning electron microscopy and Raman spectroscopy clearly show an increase in domain size by changing the growth parameters. Transmission electron microscopy further shows that the domains are crystallographically rotated with respect to each other with a range of angles from about 13 degrees to nearly 30 degrees. Electrical transport measurements performed on back-gated FETs show that overall films with larger domains tend to have higher carrier mobility, up to about 16,000 cm2 V-1 s-1 at room temperature.
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Submitted 22 October, 2010;
originally announced October 2010.
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Large domain graphene
Authors:
Xuesong Li,
Carl W. Magnuson,
Archana Venugopal,
Eric M. Vogel,
Rodney S. Ruoff,
Luigi Colombo
Abstract:
Graphene growth by chemical vapor deposition has received a lot of attention recently owing to the ease with which large area films can be grown, but growth of large domain or equivalently large grain size has not been reported yet. In this brevia, we report on a CVD process that yields graphene with domains of hundreds of micrometers, by very low pressure CVD, less than 50 mTorr, and very low pre…
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Graphene growth by chemical vapor deposition has received a lot of attention recently owing to the ease with which large area films can be grown, but growth of large domain or equivalently large grain size has not been reported yet. In this brevia, we report on a CVD process that yields graphene with domains of hundreds of micrometers, by very low pressure CVD, less than 50 mTorr, and very low precursor flow rates using methane as the source of carbon on the inside of copper foil enclosures at high temperature, around 1000 oC. The carrier mobility for the large-domain graphene films is up to 21,000 cm2/Vs.
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Submitted 19 October, 2010;
originally announced October 2010.
