Graphene films with large domain size by a two-step chemical vapor deposition process
Authors:
Xuesong Li,
Carl W. Magnuson,
Archana Venugopal,
Jinho An,
Ji Won Suk,
Boyang Han,
Mark Borysiak,
Weiwei Cai,
Aruna Velamakanni,
Yanwu Zhu,
Lianfeng Fu,
Eric M. Vogel,
Edgar Voelkl,
Luigi Colombo,
Rodney S. Ruoff
Abstract:
The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by chemical vapor deposition (CVD) of methane on Cu foils. We also showed that graphene growth on Cu is a surface-mediated process and the films were polycrystalline…
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The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by chemical vapor deposition (CVD) of methane on Cu foils. We also showed that graphene growth on Cu is a surface-mediated process and the films were polycrystalline with domains having an area of tens of square microns. In this paper we report on the effect of growth parameters such as temperature, and methane flow rate and partial pressure on the growth rate, domain size, and surface coverage of graphene as determined by Raman spectroscopy, and transmission and scanning electron microscopy. Based on the results, we developed a two-step CVD process to synthesize graphene films with domains having an area of hundreds of square microns. Scanning electron microscopy and Raman spectroscopy clearly show an increase in domain size by changing the growth parameters. Transmission electron microscopy further shows that the domains are crystallographically rotated with respect to each other with a range of angles from about 13 degrees to nearly 30 degrees. Electrical transport measurements performed on back-gated FETs show that overall films with larger domains tend to have higher carrier mobility, up to about 16,000 cm2 V-1 s-1 at room temperature.
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Submitted 22 October, 2010;
originally announced October 2010.
Domain (Grain) Boundaries and Evidence of Twin Like Structures in CVD Grown Graphene
Authors:
Jinho An,
Edgar Voelkl,
Jiwon Suk,
Xuesong Li,
Carl W. Magnuson,
Lianfeng Fu,
Peter Tiemeijer,
Maarten Bischoff,
Bert Freitag,
Elmira Popova,
Rodney S. Ruoff
Abstract:
Understanding and engineering the domain boundaries in chemically vapor deposited (CVD) monolayer graphene will be critical for improving its properties. In this study, a combination of transmission electron microscopy (TEM) techniques including selected area electron diffraction (SAED), high resolution transmission electron microscopy (HRTEM), and dark field (DF) TEM was used to study the boundar…
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Understanding and engineering the domain boundaries in chemically vapor deposited (CVD) monolayer graphene will be critical for improving its properties. In this study, a combination of transmission electron microscopy (TEM) techniques including selected area electron diffraction (SAED), high resolution transmission electron microscopy (HRTEM), and dark field (DF) TEM was used to study the boundary orientation angle distribution and the nature of the carbon bonds at the domain boundaries. This report provides an important first step towards a fundamental understanding of these domain boundaries. The results show that, for the graphene grown in this study, the 46 measured misorientation angles are all between 11-30 degrees (with the exception of one at 7 degrees). HRTEM images show the presence of adsorbates in almost all of the boundary areas. When a boundary was imaged, defects were seen (dangling bonds) at the boundaries that likely contribute to adsorbates binding at these boundaries. DFTEM images also showed the presence of a 'twin like' boundary.
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Submitted 19 October, 2010;
originally announced October 2010.
