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Roadmap on Neuromorphic Photonics
Authors:
Daniel Brunner,
Bhavin J. Shastri,
Mohammed A. Al Qadasi,
H. Ballani,
Sylvain Barbay,
Stefano Biasi,
Peter Bienstman,
Simon Bilodeau,
Wim Bogaerts,
Fabian Böhm,
G. Brennan,
Sonia Buckley,
Xinlun Cai,
Marcello Calvanese Strinati,
B. Canakci,
Benoit Charbonnier,
Mario Chemnitz,
Yitong Chen,
Stanley Cheung,
Jeff Chiles,
Suyeon Choi,
Demetrios N. Christodoulides,
Lukas Chrostowski,
J. Chu,
J. H. Clegg
, et al. (125 additional authors not shown)
Abstract:
This roadmap consolidates recent advances while exploring emerging applications, reflecting the remarkable diversity of hardware platforms, neuromorphic concepts, and implementation philosophies reported in the field. It emphasizes the critical role of cross-disciplinary collaboration in this rapidly evolving field.
This roadmap consolidates recent advances while exploring emerging applications, reflecting the remarkable diversity of hardware platforms, neuromorphic concepts, and implementation philosophies reported in the field. It emphasizes the critical role of cross-disciplinary collaboration in this rapidly evolving field.
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Submitted 16 January, 2025; v1 submitted 14 January, 2025;
originally announced January 2025.
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Strong Thermo-mechanical Squeezing in a far detuned Membrane-in-the-middle System
Authors:
Sameer Sonar,
Vitaly Fedoseev,
Matthew Weaver,
Fernando Luna,
Elger Vlieg,
Harmen van der Meer,
Dirk Bouwmeester,
Wolfgang Löffler
Abstract:
We demonstrate 8.5 dB thermal squeezing of a membrane oscillator using the dynamical backaction effect and electrostatic feedback in an optomechanical membrane-in-the-middle setup. We show that strong squeezing can be obtained even in the far detuning regime of a sideband-resolved system. By using the dielectrophoretic force of a metallic needle kept in close proximity to the membrane, we implemen…
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We demonstrate 8.5 dB thermal squeezing of a membrane oscillator using the dynamical backaction effect and electrostatic feedback in an optomechanical membrane-in-the-middle setup. We show that strong squeezing can be obtained even in the far detuning regime of a sideband-resolved system. By using the dielectrophoretic force of a metallic needle kept in close proximity to the membrane, we implement the one-quadrature active feedback scheme to prevent the divergence of the amplified quadrature and surpass the 3 dB limit of mechanical squeezing. We also discuss different regions of the sideband spectrum where strong squeezing can be obtained. Although the demonstration here is classical, this technique is equally applicable to prepare the mechanical oscillator in a quantum squeezed state.
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Submitted 3 July, 2018; v1 submitted 24 May, 2018;
originally announced May 2018.
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Generic nano-imprint process for fabrication of nanowire arrays
Authors:
Aurelie Pierret,
Moira Hocevar,
Silke L. Diedenhofen,
Rienk E. Algra,
E. Vlieg,
Eugene C. Timmering,
Marc A. Verschuuren,
George W. G. Immink,
Marcel A. Verheijen,
Erik P. A. M. Bakkers
Abstract:
A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha so…
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A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
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Submitted 11 November, 2009;
originally announced November 2009.
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Twinning superlattices in indium phosphide nanowires
Authors:
Rienk Algra,
Marcel Verheijen,
Magnus Borgstrom,
Lou-Fe Feiner,
George Immink,
Willem van Enckevort,
Elias Vlieg,
Erik Bakkers
Abstract:
Here, we show that we control the crystal structure of indium phosphide (InP) nanowires by impurity dopants. We have found that zinc decreases the activation barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the InP nanowires to crystallise in the zinc blende, instead of the commonly found wurtzite crystal structure. More importantly, we demonstrate that we can, by contr…
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Here, we show that we control the crystal structure of indium phosphide (InP) nanowires by impurity dopants. We have found that zinc decreases the activation barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the InP nanowires to crystallise in the zinc blende, instead of the commonly found wurtzite crystal structure. More importantly, we demonstrate that we can, by controlling the crystal structure, induce twinning superlattices with long-range order in InP nanowires. We can tune the spacing of the superlattices by the wire diameter and the zinc concentration and present a model based on the cross-sectional shape of the zinc-blende InP nanowires to quantitatively explain the formation of the periodic twinning.
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Submitted 9 July, 2008;
originally announced July 2008.
