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Coherent spectroscopy of a single Mn-doped InGaAs quantum dot
Authors:
Jovana Filipovic,
Ankit Kundu,
Neelesh Kumar Vij,
Simon Fécherolle,
Aristide Lemaître,
Shilpi Gupta,
Olivier Krebs
Abstract:
Doping a self-assembled InGaAs/GaAs quantum dot (QD) with a single Mn atom, a magnetic acceptor impurity, provides a quantum system with discrete energy levels and original spin-dependent optical selection rules, which thus has large potential in quantum photonics, notably as a source of multi-entangled photons. To investigate this potential further, we perform coherent optical spectroscopy under…
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Doping a self-assembled InGaAs/GaAs quantum dot (QD) with a single Mn atom, a magnetic acceptor impurity, provides a quantum system with discrete energy levels and original spin-dependent optical selection rules, which thus has large potential in quantum photonics, notably as a source of multi-entangled photons. To investigate this potential further, we perform coherent optical spectroscopy under continuous wave excitation of the 3-level V-like system formed in such a Mn-doped QD when charged by a single hole. In spite of a large inhomogeneous broadening of the optical transitions, we demonstrate Autler-Townes splitting both by resonant Raman scattering and by probe absorption spectroscopy for different saturation powers. Analysing these data with a comprehensive model based on optical Bloch equations, we show evidence for quantum interference within the V-like system and assess the pure dephasing rate between the corresponding spin states.
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Submitted 25 October, 2024;
originally announced October 2024.
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Cavity enhanced emission from a silicon T center
Authors:
Fariba Islam,
Chang-Min Lee,
Samuel Harper,
Mohammad Habibur Rahaman,
Yuqi Zhao,
Neelesh Kumar Vij,
Edo Waks
Abstract:
Silicon T centers present the promising possibility to generate optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through t…
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Silicon T centers present the promising possibility to generate optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect. In this work we demonstrate cavity-enhanced emission from a single T center in a nanophotonic cavity. We achieve a two-orders of magnitude increase in brightness of the zero-phonon line relative to waveguide-coupled emitters, a 23% collection efficiency from emitter to fiber, and an overall emission efficiency into the zero-phonon line of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a Purcell factor exceeding 18 when correcting for the emission to the phonon sideband. These results pave the way towards efficient spin-photon interfaces in silicon photonics.
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Submitted 25 October, 2023; v1 submitted 20 October, 2023;
originally announced October 2023.
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Multi-parameter Optimization for Ground-state Cooling of Mechanical Mode using Quantum Dots
Authors:
Neelesh Kumar Vij,
Meenakshi Khosla,
Shilpi Gupta
Abstract:
Cooling a mechanical mode to its motional ground state opens up avenues for both scientific and technological advancements in the field of quantum meteorology and information processing. We propose a multi-parameter optimization scheme for ground-state cooling of a mechanical mode using quantum dots. Applying the master equation approach, we formulate the optimization scheme over a broad range of…
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Cooling a mechanical mode to its motional ground state opens up avenues for both scientific and technological advancements in the field of quantum meteorology and information processing. We propose a multi-parameter optimization scheme for ground-state cooling of a mechanical mode using quantum dots. Applying the master equation approach, we formulate the optimization scheme over a broad range of system parameters including detunings, decay rates, pumping rates, and coupling strengths. We implement the optimization scheme on two major types of semiconductor quantum dot systems: colloidal and epitaxial quantum dots. These systems span a broad range of mechanical mode frequencies, coupling rates, and decay rates. Our optimization scheme lowers the steady-state phonon number in all cases by several orders of magnitude. We also calculate the net cooling rate by estimating the phonon decay rate and show that the optimized system parameters also result in efficient cooling. The proposed optimization scheme can be readily extended to other driven systems coupled to a mechanical mode.
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Submitted 18 July, 2022; v1 submitted 29 April, 2021;
originally announced April 2021.
