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Impact of the circuit layout on the charge collection in a monolithic pixel sensor
Authors:
Corentin Lemoine,
Rafael Ballabriga,
Eric Buschmann,
Michael Campbell,
Raimon Casanova Mohr,
Dominik Dannheim,
Jona Dilg,
Ana Dorda,
Finn King,
Ono Feyens,
Philipp Gadow,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Iraklis Kremastiotis,
Stefano Maffessanti,
Larissa Mendes,
Younes Otarid,
Christian Reckleben,
Sébastien Rettie,
Manuel Alejandro del Rio Viera,
Sara Ruiz Daza,
Judith Schlaadt,
Adriana Simancas
, et al. (6 additional authors not shown)
Abstract:
CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a n…
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CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a new test-chip produced in the same process but with a larger pixel pitch than previous prototypes, exhibits an unexpected asymmetric efficiency pattern.
This contribution describes a simulation procedure combining TCAD, Monte Carlo and circuit simulations to model and understand this effect. It proved able to reproduce measurement results and attribute the asymmetric efficiency drop to a slow charge collection due to low amplitude potential wells created by the circuitry layout and impacting efficiency via ballistic deficit.
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Submitted 27 March, 2025;
originally announced March 2025.
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Transient studies using a TCAD and Allpix Squared combination approach
Authors:
Manuel A. Del Rio Viera,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Judith Schlaadt,
Paul Schütze,
Adriana Simancas,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the s…
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The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. The response of the sensors can then be tested in laboratory and test beam facilities and compared to simulation results. Transient simulations allow for studying the response of the sensor as a function of time, such as the signal produced after a charged particle passes through the sensor. The study of these signals is important to understand the magnitude and timing of the response from the sensors and improve upon them. While TCAD simulations are accurate, the time required to produce a single pulse is large compared to a combination of MC and TCAD simulations. In this work, a validation of the transient simulation approach and studies on charge collection are presented.
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Submitted 10 February, 2025;
originally announced February 2025.
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The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
Authors:
Sara Ruiz Daza,
Rafael Ballabriga,
Eric Buschmann,
Michael Campbell,
Raimon Casanova Mohr,
Dominik Dannheim,
Jona Dilg,
Ana Dorda,
Finn King,
Ono Feyens,
Philipp Gadow,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Iraklis Kremastiotis,
Corentin Lemoine,
Stefano Maffessanti,
Larissa Mendes,
Younes Otarid,
Christian Reckleben,
Sébastien Rettie,
Manuel Alejandro del Rio Viera,
Judith Schlaadt,
Adriana Simancas
, et al. (6 additional authors not shown)
Abstract:
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflo…
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The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology.
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Submitted 15 May, 2025; v1 submitted 10 February, 2025;
originally announced February 2025.
