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Impact of the circuit layout on the charge collection in a monolithic pixel sensor
Authors:
Corentin Lemoine,
Rafael Ballabriga,
Eric Buschmann,
Michael Campbell,
Raimon Casanova Mohr,
Dominik Dannheim,
Jona Dilg,
Ana Dorda,
Finn King,
Ono Feyens,
Philipp Gadow,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Iraklis Kremastiotis,
Stefano Maffessanti,
Larissa Mendes,
Younes Otarid,
Christian Reckleben,
Sébastien Rettie,
Manuel Alejandro del Rio Viera,
Sara Ruiz Daza,
Judith Schlaadt,
Adriana Simancas
, et al. (6 additional authors not shown)
Abstract:
CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a n…
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CERN's strategic R&D programme on technologies for future experiments recently started investigating the TPSCo 65nm ISC CMOS imaging process for monolithic active pixels sensors for application in high energy physics. In collaboration with the ALICE experiment and other institutes, several prototypes demonstrated excellent performance, qualifying the technology. The Hybrid-to-Monolithic (H2M), a new test-chip produced in the same process but with a larger pixel pitch than previous prototypes, exhibits an unexpected asymmetric efficiency pattern.
This contribution describes a simulation procedure combining TCAD, Monte Carlo and circuit simulations to model and understand this effect. It proved able to reproduce measurement results and attribute the asymmetric efficiency drop to a slow charge collection due to low amplitude potential wells created by the circuitry layout and impacting efficiency via ballistic deficit.
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Submitted 27 March, 2025;
originally announced March 2025.
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Transient studies using a TCAD and Allpix Squared combination approach
Authors:
Manuel A. Del Rio Viera,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Judith Schlaadt,
Paul Schütze,
Adriana Simancas,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the s…
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The goal of the TANGERINE project is to develop the next generation of monolithic silicon pixel detectors using a 65 nm CMOS imaging process, which offers a higher logic density and overall lower power consumption compared to previously used processes. A combination of Technology Computer-Aided Design (TCAD) and Monte Carlo (MC) simulations is used to understand the physical processes within the sensing element and thus the overall performance of the pixel detector. The response of the sensors can then be tested in laboratory and test beam facilities and compared to simulation results. Transient simulations allow for studying the response of the sensor as a function of time, such as the signal produced after a charged particle passes through the sensor. The study of these signals is important to understand the magnitude and timing of the response from the sensors and improve upon them. While TCAD simulations are accurate, the time required to produce a single pulse is large compared to a combination of MC and TCAD simulations. In this work, a validation of the transient simulation approach and studies on charge collection are presented.
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Submitted 10 February, 2025;
originally announced February 2025.
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The H2M Monolithic Active Pixel Sensor -- characterizing non-uniform in-pixel response in a 65 nm CMOS imaging technology
Authors:
Sara Ruiz Daza,
Rafael Ballabriga,
Eric Buschmann,
Michael Campbell,
Raimon Casanova Mohr,
Dominik Dannheim,
Jona Dilg,
Ana Dorda,
Finn King,
Ono Feyens,
Philipp Gadow,
Ingrid-Maria Gregor,
Karsten Hansen,
Yajun He,
Lennart Huth,
Iraklis Kremastiotis,
Corentin Lemoine,
Stefano Maffessanti,
Larissa Mendes,
Younes Otarid,
Christian Reckleben,
Sébastien Rettie,
Manuel Alejandro del Rio Viera,
Judith Schlaadt,
Adriana Simancas
, et al. (6 additional authors not shown)
Abstract:
The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflo…
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The high energy physics community recently gained access to the TPSCo 65 nm ISC (Image Sensor CMOS), which enables a higher in-pixel logic density in monolithic active pixel sensors (MAPS) compared to processes with larger feature sizes. To explore this novel technology, the Hybrid-to-Monolithic (H2M) test chip has been designed and manufactured. The design followed a digital-on-top design workflow and ports a hybrid pixel-detector architecture, with digital pulse processing in each pixel, into a monolithic chip. The chip matrix consists of 64$\times$16 square pixels with a size of 35$\times$35 um2, and a total active area of approximately 1.25 um2. The chip has been successfully integrated into the Caribou DAQ system. It is fully functional, and the measured threshold dispersion and noise agree with the expectation from front-end simulations. However, a non-uniform in-pixel response related to the size and location of the n-wells in the analog circuitry has been observed in test beam measurements and will be discussed in this contribution. This asymmetry in the pixel response, enhanced by the 35 um pixel pitch - larger than in other prototypes - and certain features of the readout circuit, has not been observed in prototypes with smaller pixel pitches in this technology.
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Submitted 15 May, 2025; v1 submitted 10 February, 2025;
originally announced February 2025.
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Simulating Monolithic Active Pixel Sensors: A Technology-Independent Approach Using Generic Doping Profiles
Authors:
Håkan Wennlöf,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Lennart Huth,
Stephan Lachnit,
Larissa Mendes,
Daniil Rastorguev,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Alessandra Tomal,
Anastasiia Velyka,
Gianpiero Vignola
Abstract:
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an e…
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The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper presents the guiding principles of such simulations, using a CMOS pixel sensor with a small collection electrode and a high-resistivity epitaxial layer as an example. The full simulation workflow is described, along with possible pitfalls and how to avoid them. For commercial CMOS processes, detailed doping profiles are confidential, but the presented method provides an optimisation tool that is sufficiently accurate to investigate sensor behaviour and trade-offs of different sensor designs without knowledge of proprietary information.
The workflow starts with detailed electric field finite element method simulations in TCAD, using generic doping profiles. Examples of the effect of varying different parameters of the simulated sensor are shown, as well as the creation of weighting fields, and transient pulse simulations. The fields resulting from TCAD simulations can be imported into the Allpix Squared Monte Carlo simulation framework, which enables high-statistics simulations, including modelling of stochastic fluctuations from the underlying physics processes of particle interaction. Example Monte Carlo simulation setups are presented and the different parts of a simulation chain are described.
Simulation studies from small collection electrode CMOS sensors are presented, and example results are shown for both single sensors and multiple sensors in a test beam telescope configuration. The studies shown are those typically performed on sensor prototypes in test beam campaigns, and a comparison is made to test beam data, showing a maximum deviation of 4% and demonstrating that the approach is viable for generating realistic results.
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Submitted 31 July, 2024;
originally announced August 2024.
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Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology
Authors:
Adriana Simancas,
Justus Braach,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Judith Schlaadt,
Paul Schütze,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improv…
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Monolithic active pixel sensors (MAPS) produced in a 65 nm CMOS imaging technology are being investigated for applications in particle physics. The MAPS design has a small collection electrode characterized by an input capacitance of ~fF, granting a high signal-to-noise ratio and low power consumption. Additionally, the 65 nm CMOS imaging technology brings a reduction in material budget and improved logic density of the readout circuitry, compared to previously studied technologies. Given these features, this technology was chosen by the TANGERINE project to develop the next generation of silicon pixel sensors. The sensor design targets temporal and spatial resolutions compatible with the requirements for a vertex detector at future lepton colliders. Simulations and test-beam characterization of technology demonstrators have been carried out in close collaboration with the CERN EP R&D program and the ALICE ITS3 upgrade. TCAD device simulations using generic doping profiles and Monte Carlo simulations have been used to build an understanding of the technology and predict the performance parameters of the sensor. Technology demonstrators of a 65 nm CMOS MAPS with a small collection electrode have been characterized in laboratory and test-beam facilities by studying performance parameters such as cluster size, charge collection, and efficiency. This work compares simulation results to test-beam data. The experimental results establish this technology as a promising candidate for a vertex detector at future lepton colliders and give valuable information for improving the simulation approach.
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Submitted 22 February, 2024;
originally announced February 2024.
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Developing a Monolithic Silicon Sensor in a 65 nm CMOS Imaging Technology for Future Lepton Collider Vertex Detectors
Authors:
Adriana Simancas,
Justus Braach,
Eric Buschmann,
Ankur Chauhan,
Dominik Dannheim,
Manuel Del Rio Viera,
Katharina Dort,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Walter Snoeys,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scatterin…
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Monolithic CMOS sensors in a 65 nm imaging technology are being investigated by the CERN EP Strategic R&D Programme on Technologies for Future Experiments for an application in particle physics. The appeal of monolithic detectors lies in the fact that both sensor volume and readout electronics are integrated in the same silicon wafer, providing a reduction in production effort, costs and scattering material. The Tangerine Project WP1 at DESY participates in the Strategic R&D Programme and is focused on the development of a monolithic active pixel sensor with a time and spatial resolution compatible with the requirements for a future lepton collider vertex detector. By fulfilling these requirements, the Tangerine detector is suitable as well to be used as telescope planes for the DESY-II Test Beam facility. The project comprises all aspects of sensor development, from the electronics engineering and the sensor design using simulations, to laboratory and test beam investigations of prototypes. Generic TCAD Device and Monte-Carlo simulations are used to establish an understanding of the technology and provide important insight into performance parameters of the sensor. Testing prototypes in laboratory and test beam facilities allows for the characterization of their response to different conditions. By combining results from all these studies it is possible to optimize the sensor layout. This contribution presents results from generic TCAD and Monte-Carlo simulations, and measurements performed with test chips of the first sensor submission.
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Submitted 31 March, 2023;
originally announced March 2023.
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Towards a New Generation of Monolithic Active Pixel Sensors
Authors:
Ankur Chauhan,
Manuel Del Rio Viera,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola,
Håkan Wennlöf
Abstract:
A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow for significant red…
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A new generation of Monolithic Active Pixel Sensors (MAPS), produced in a 65 nm CMOS imaging process, promises higher densities of on-chip circuits and, for a given pixel size, more sophisticated in-pixel logic compared to larger feature size processes. MAPS are a cost-effective alternative to hybrid pixel sensors since flip-chip bonding is not required. In addition, they allow for significant reductions of the material budget of detector systems, due to the smaller physical thicknesses of the active sensor and the absence of a separate readout chip. The TANGERINE project develops a sensor suitable for future Higgs factories as well as for a beam telescope to be used at beam-test facilities. The sensors will have small collection electrodes (order of $μ$m) to maximize the signal-to-noise ratio, which makes it possible to minimize power dissipation in the circuitry. The first batch of test chips, featuring full front-end amplifiers with Krummenacher feedback, was produced and tested at the Mainzer Mikrotron (MAMI) at the end of 2021. MAMI provides an electron beam with currents up to 100 $μ$A and an energy of 855 MeV. The analog output signal of the test chips was recorded with a high bandwidth oscilloscope and used to study the charge-sensitive amplifier of the chips in terms of waveform analysis. A beam telescope was used as a reference system to allow for track-based analysis of the recorded data.
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Submitted 18 October, 2022;
originally announced October 2022.
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The Tangerine project: Development of high-resolution 65 nm silicon MAPS
Authors:
Håkan Wennlöf,
Ankur Chauhan,
Manuel Del Rio Viera,
Doris Eckstein,
Finn Feindt,
Ingrid-Maria Gregor,
Karsten Hansen,
Lennart Huth,
Larissa Mendes,
Budi Mulyanto,
Daniil Rastorguev,
Christian Reckleben,
Sara Ruiz Daza,
Paul Schütze,
Adriana Simancas,
Simon Spannagel,
Marcel Stanitzki,
Anastasiia Velyka,
Gianpiero Vignola
Abstract:
The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This is the first application of this process in particle physics, and it is of great interest as it allows for an increased logic density and reduced…
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The Tangerine project aims to develop new state-of-the-art high-precision silicon detectors. Part of the project has the goal of developing a monolithic active pixel sensor using a novel 65 nm CMOS imaging process, with a small collection electrode. This is the first application of this process in particle physics, and it is of great interest as it allows for an increased logic density and reduced power consumption and material budget compared to other processes. The process is envisioned to be used in for example the next ALICE inner tracker upgrade, and in experiments at the electron-ion collider.
The initial goal of the three-year Tangerine project is to develop and test a sensor in a 65 nm CMOS imaging process that can be used in test beam telescopes at DESY, providing excellent spatial resolution and high time resolution, and thus demonstrating the capabilities of the process. The project covers all aspects of sensor R&D, from electronics and sensor design using simulations, to prototype test chip characterisation in labs and at test beams. The sensor design simulations are performed by using a powerful combination of detailed electric field simulations using technology computer-aided design and high-statistics Monte Carlo simulations using the Allpix Squared framework. A first prototype test chip in the process has been designed and produced, and successfully operated and tested both in labs and at test beams.
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Submitted 11 June, 2022;
originally announced June 2022.
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The more you ask, the less you get: the negative impact of collaborative overload on performance
Authors:
Anna Velyka,
Marco Guerzoni
Abstract:
This paper is about the possible negative impact of excessive collaboration on the performance of top employees. With the rise of participatory culture and developments in communications technology, management practices require greater conceptual awareness about possible outcomes of increased organizational interconnectivity. While there exists a sound theoretical basis for possible burdens brough…
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This paper is about the possible negative impact of excessive collaboration on the performance of top employees. With the rise of participatory culture and developments in communications technology, management practices require greater conceptual awareness about possible outcomes of increased organizational interconnectivity. While there exists a sound theoretical basis for possible burdens brought by collaborative overload, the literature never really manage to measure and empirically test this phenomenon. We address this gap by developing a methodological framework for the identification of organizational actors at risk of operational capacity overload. Drawing on social network analysis as the widely applied approach for the estimation of employees' involvement in the information exchange networks, this paper describes potential personal and organizational causes leading to the emergence of collaborative overload. Relying on primary data gathered through a survey conducted among employees in a large insurance company, we present a testable model for overload detection. A second merit of the paper consists in finding a novel identification strategy for empirical works on cross-sectional network data, which often face the issue of endogeneity. This research suggests that active collaborative activity does not cause a decrease throughout every aspect of performance. We found that expertise sharing depends on a few key players who take core knowledge assets upon themselves and thus run higher risks of exposure to overload.
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Submitted 28 April, 2020;
originally announced April 2020.
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Development and simulations of Enhanced Lateral Drift Sensors
Authors:
Anastasiia Velyka,
Hendrik Jansen
Abstract:
We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing mechanism, which is achieved by a non-homogeneous electric field in the lateral direction in the sensor bulk. The non-homogeneous electric field is created by buried…
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We present the concept of a new type of silicon tracking sensor called Enhanced Lateral Drift (ELAD) sensor. In ELAD sensors the spatial resolution of the impact position of ionising particles is improved by a dedicated charge sharing mechanism, which is achieved by a non-homogeneous electric field in the lateral direction in the sensor bulk. The non-homogeneous electric field is created by buried doping implants with a higher concentration with respect to the background concentration of the bulk. The resulting position-dependent charge sharing allows for an improved interpolation of the impact position. TCAD-based electric field simulations for 2D and 3D geometries as well as transient simulations with a traversing particle for the 2D geometry have been carried out. The electric field profiles have further been optimised for position resolution. The simulations show a strong dependence of the charge sharing mechanism on the buried implant concentration. Optimal values for the buried implant concentration allow for nearly linear charge sharing between two readout electrodes as a function of the impact position. Additionally, the foreseen production technique combining silicon epitaxy and ion beam implantation is outlined.
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Submitted 8 May, 2019;
originally announced May 2019.
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Detector Technologies for CLIC
Authors:
A. C. Abusleme Hoffman,
G. Parès,
T. Fritzsch,
M. Rothermund,
H. Jansen,
K. Krüger,
F. Sefkow,
A. Velyka,
J. Schwandt,
I. Perić,
L. Emberger,
C. Graf,
A. Macchiolo,
F. Simon,
M. Szalay,
N. van der Kolk,
H. Abramowicz,
Y. Benhammou,
O. Borysov,
M. Borysova,
A. Joffe,
S. Kananov,
A. Levy,
I. Levy,
G. Eigen
, et al. (107 additional authors not shown)
Abstract:
The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Stan…
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The Compact Linear Collider (CLIC) is a high-energy high-luminosity linear electron-positron collider under development. It is foreseen to be built and operated in three stages, at centre-of-mass energies of 380 GeV, 1.5 TeV and 3 TeV, respectively. It offers a rich physics program including direct searches as well as the probing of new physics through a broad set of precision measurements of Standard Model processes, particularly in the Higgs-boson and top-quark sectors. The precision required for such measurements and the specific conditions imposed by the beam dimensions and time structure put strict requirements on the detector design and technology. This includes low-mass vertexing and tracking systems with small cells, highly granular imaging calorimeters, as well as a precise hit-time resolution and power-pulsed operation for all subsystems. A conceptual design for the CLIC detector system was published in 2012. Since then, ambitious R&D programmes for silicon vertex and tracking detectors, as well as for calorimeters have been pursued within the CLICdp, CALICE and FCAL collaborations, addressing the challenging detector requirements with innovative technologies. This report introduces the experimental environment and detector requirements at CLIC and reviews the current status and future plans for detector technology R&D.
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Submitted 7 May, 2019;
originally announced May 2019.
