Showing 1–50 of 152 results for author: Vandersypen, L M K

Site-resolved magnon and triplon dynamics on a programmable quantum dot spin ladder

Authors: Pablo Cova Fariña, Daniel Jirovec, Xin Zhang, Elizaveta Morozova, Stefan D. Oosterhout, Stefano Reale, Tzu-Kan Hsiao, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: Quasi-particle dynamics in interacting systems in the presence of disorder challenges the notion of internal thermalization, but proves difficult to investigate theoretically for large particle numbers. Engineered quantum systems may offer a viable alternative, as witnessed in experimental demonstrations in a variety of physical platforms, each with its own capabilities and limitations. Semiconduc… ▽ More Quasi-particle dynamics in interacting systems in the presence of disorder challenges the notion of internal thermalization, but proves difficult to investigate theoretically for large particle numbers. Engineered quantum systems may offer a viable alternative, as witnessed in experimental demonstrations in a variety of physical platforms, each with its own capabilities and limitations. Semiconductor gate-defined quantum dot arrays are of particular interest since they offer both a direct mapping of their Hamiltonian to Fermi-Hubbard and Heisenberg models and the in-situ tunability of (magnetic) interactions and onsite potentials. In this work, we use an array of germanium quantum dots to simulate the dynamics of both single-spin excitations (magnons) and two-spin excitations (triplons). We develop a methodology that combines digital spin qubit operations for state preparation and readout with analog evolution under the full system Hamiltonian. Using these techniques, we can reconstruct quantum walk plots for both magnons and triplons, and for various configurations of Heisenberg exchange couplings. We furthermore explore the effect of single-site disorder and its impact on the propagation of spin excitations. The obtained results can provide a basis for simulating disorder-based solid-state phenomena such as many-body localization. △ Less

Submitted 10 June, 2025; originally announced June 2025.

Running a six-qubit quantum circuit on a silicon spin qubit array

Authors: I. Fernández de Fuentes, E. Raymenants, B. Undseth, O. Pietx-Casas, S. Philips M. Mądzik, S. L. de Snoo, S. V. Amitonov, L. Tryputen, A. T. Schmitz, A. Y. Matsuura, G. Scappucci, L. M. K. Vandersypen

Abstract: The simplicity of encoding a qubit in the state of a single electron spin and the potential for their integration into industry-standard microchips continue to drive the field of semiconductor-based quantum computing. However, after decades of progress, validating universal logic in these platforms has advanced little beyond first-principles demonstrations of meeting the DiVincenzo criteria. Case… ▽ More The simplicity of encoding a qubit in the state of a single electron spin and the potential for their integration into industry-standard microchips continue to drive the field of semiconductor-based quantum computing. However, after decades of progress, validating universal logic in these platforms has advanced little beyond first-principles demonstrations of meeting the DiVincenzo criteria. Case in point, and specifically for silicon-based quantum dots, three-qubit algorithms have been the upper limit to date, despite the availability of devices containing more qubits. In this work, we fully exploit the capacity of a spin-qubit array and implement a six qubit quantum circuit, the largest utilizing semiconductor quantum technology. By programming the quantum processor, we execute quantum circuits across all permutations of three, four, five, and six neighbouring qubits, demonstrating successful programmable multi-qubit operation throughout the array. The results reveal that, despite the high quality of individual units, errors quickly accumulate when combining all of them in a quantum circuit. This work highlights the necessity to minimize idling times through simultaneous operations, boost dephasing times, and consistently improve state preparation and measurement fidelities. △ Less

Submitted 25 May, 2025; originally announced May 2025.

Comments: main text with 10 pages and 4 figures, methods and supplementary materials with 14 pages and 9 figures, in a single file

Exchange cross-talk mitigation in dense quantum dot arrays

Authors: Daniel Jirovec, Pablo Cova Fariña, Stefano Reale, Stefan D. Oosterhout, Xin Zhang, Elizaveta Morozova, Sander de Snoo, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: Coupled spins in semiconductor quantum dots are a versatile platform for quantum computing and simulations of complex many-body phenomena. However, on the path of scale-up, cross-talk from densely packed electrodes poses a severe challenge. While cross-talk onto the dot potentials is nowadays routinely compensated for, cross-talk on the exchange interaction is much more difficult to tackle because… ▽ More Coupled spins in semiconductor quantum dots are a versatile platform for quantum computing and simulations of complex many-body phenomena. However, on the path of scale-up, cross-talk from densely packed electrodes poses a severe challenge. While cross-talk onto the dot potentials is nowadays routinely compensated for, cross-talk on the exchange interaction is much more difficult to tackle because it is not always directly measurable. Here we propose and implement a way of characterizing and compensating cross-talk on adjacent exchange interactions by following the singlet-triplet avoided crossing in Ge. We show that we can easily identify the barrier-to-barrier cross-talk element without knowledge of the particular exchange value in a 2x4 quantum dot array. We uncover striking differences among these cross-talk elements which can be linked to the geometry of the device and the barrier gate fan-out. We validate the methodology by tuning up four-spin Heisenberg chains. The same methodology should be applicable to longer chains of spins and to other semiconductor platforms in which mixing of the singlet and the lowest-energy triplet is present or can be engineered. Additionally, this procedure is well suited for automated tuning routines as we obtain a stand-out feature that can be easily tracked and directly returns the magnitude of the cross-talk. △ Less

Submitted 31 March, 2025; originally announced March 2025.

Two-qubit logic and teleportation with mobile spin qubits in silicon

Authors: Yuta Matsumoto, Maxim De Smet, Larysa Tryputen, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Maximilian Rimbach-Russ, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: The scalability and power of quantum computing architectures depend critically on high-fidelity operations and robust and flexible qubit connectivity. In this respect, mobile qubits are particularly attractive as they enable dynamic and reconfigurable qubit arrays. This approach allows quantum processors to adapt their connectivity patterns during operation, implement different quantum error corre… ▽ More The scalability and power of quantum computing architectures depend critically on high-fidelity operations and robust and flexible qubit connectivity. In this respect, mobile qubits are particularly attractive as they enable dynamic and reconfigurable qubit arrays. This approach allows quantum processors to adapt their connectivity patterns during operation, implement different quantum error correction codes on the same hardware, and optimize resource utilization through dedicated functional zones for specific operations like measurement or entanglement generation. Such flexibility also relieves architectural constraints, as recently demonstrated in atomic systems based on trapped ions and neutral atoms manipulated with optical tweezers. In solid-state platforms, highly coherent shuttling of electron spins was recently reported. A key outstanding question is whether it may be possible to perform quantum gates directly on the mobile spins. In this work, we demonstrate two-qubit operations between two electron spins carried towards each other in separate traveling potential minima in a semiconductor device. We find that the interaction strength is highly tunable by their spatial separation, achieving an average two-qubit gate fidelity of about 99\%. Additionally, we implement conditional post-selected quantum state teleportation between spatially separated qubits with an average gate fidelity of 87\%, showcasing the potential of mobile spin qubits for non-local quantum information processing. We expect that operations on mobile qubits will become a universal feature of future large-scale semiconductor quantum processors. △ Less

Submitted 19 March, 2025; originally announced March 2025.

Unified evolutionary optimization for high-fidelity spin qubit operations

Authors: Sam R. Katiraee-Far, Yuta Matsumoto, Brennan Undseth, Maxim De Smet, Valentina Gualtieri, Christian Ventura Meinersen, Irene Fernandez de Fuentes, Kenji Capannelli, Maximilian Rimbach-Russ, Giordano Scappucci, Lieven M. K. Vandersypen, Eliska Greplova

Abstract: Developing optimal strategies to calibrate quantum processors for high-fidelity operation is one of the outstanding challenges in quantum computing today. Here, we demonstrate multiple examples of high-fidelity operations achieved using a unified global optimization-driven automated calibration routine on a six dot semiconductor quantum processor. Within the same algorithmic framework we optimize… ▽ More Developing optimal strategies to calibrate quantum processors for high-fidelity operation is one of the outstanding challenges in quantum computing today. Here, we demonstrate multiple examples of high-fidelity operations achieved using a unified global optimization-driven automated calibration routine on a six dot semiconductor quantum processor. Within the same algorithmic framework we optimize readout, shuttling and single-qubit quantum gates by tailoring task-specific cost functions and tuning parameters based on the underlying physics of each operation. Our approach reaches systematically $99\%$ readout fidelity, $>99\%$ shuttling fidelity over an effective distance of 10$μ$m, and $>99.5\%$ single-qubit gate fidelity on timescales similar or shorter compared to those of expert human operators. The flexibility of our gradient-free closed loop algorithmic procedure allows for seamless application across diverse qubit functionalities while providing a systematic framework to tune-up semiconductor quantum devices and enabling interpretability of the identified optimal operation points. △ Less

Submitted 15 March, 2025; originally announced March 2025.

Comments: 13 pages, 10 figures, code https://gitlab.com/QMAI/papers/evolutionarytuning

Single-step high-fidelity three-qubit gates by anisotropic chiral interactions

Authors: Minh T. P. Nguyen, Maximilian Rimbach-Russ, Lieven M. K. Vandersypen, Stefano Bosco

Abstract: Direct multi-qubit gates are becoming critical to facilitate quantum computations in near-term devices by reducing the gate counts and circuit depth. Here, we demonstrate that fast and high fidelity three-qubit gates can be realized in a single step by leveraging small anisotropic and chiral three-qubit interactions. These ingredients naturally arise in state-of-the-art spin-based quantum hardware… ▽ More Direct multi-qubit gates are becoming critical to facilitate quantum computations in near-term devices by reducing the gate counts and circuit depth. Here, we demonstrate that fast and high fidelity three-qubit gates can be realized in a single step by leveraging small anisotropic and chiral three-qubit interactions. These ingredients naturally arise in state-of-the-art spin-based quantum hardware through a combination of spin-orbit interactions and orbital magnetic fields. These interactions resolve the key synchronization issues inherent in protocols relying solely on two-qubit couplings, which significantly limit gate fidelity. We confirm with numerical simulations that our single-step three-qubit gate can outperform existing protocols, potentially achieving infidelity $\leq 10^{-4}$ in 80-100 ns under current experimental conditions. To further benchmark its performance, we also propose an alternative composite three-qubit gate sequence based on anisotropic two-qubit interactions with built-in echo sequence and show that the single-step protocol can outperform it, making it highly suitable for near-term quantum processors. △ Less

Submitted 15 March, 2025; originally announced March 2025.

Comments: 23 pages, 8 figures, comments are welcome!

Near-Term Spin-Qubit Architecture Design via Multipartite Maximally-Entangled States

Authors: Nikiforos Paraskevopoulos, Matthew Steinberg, Brennan Undseth, Aritra Sarkar, Lieven M. K. Vandersypen, Xiao Xue, Sebastian Feld

Abstract: The design and benchmarking of quantum computer architectures traditionally rely on practical hardware restrictions, such as gate fidelities, control, and cooling. At the theoretical and software levels, numerous approaches have been proposed for benchmarking quantum devices, ranging from, inter alia, quantum volume to randomized benchmarking. In this work, we utilize the quantum information-theor… ▽ More The design and benchmarking of quantum computer architectures traditionally rely on practical hardware restrictions, such as gate fidelities, control, and cooling. At the theoretical and software levels, numerous approaches have been proposed for benchmarking quantum devices, ranging from, inter alia, quantum volume to randomized benchmarking. In this work, we utilize the quantum information-theoretic properties of multipartite maximally-entangled quantum states, in addition to their correspondence with quantum error correction codes, permitting us to quantify the entanglement generated on near-term bilinear spin-qubit architectures. For this aim, we introduce four metrics which ascertain the quality of genuine multipartite quantum entanglement, along with circuit-level fidelity measures. As part of the task of executing a quantum circuit on a device, we devise simulations which combine expected hardware characteristics of spin-qubit devices with appropriate compilation techniques; we then analyze three different architectural choices of varying lattice sizes for bilinear arrays, under three increasingly realistic noise models. We find that if the use of a compiler is assumed, sparsely-connected spin-qubit lattices can approach comparable values of our metrics to those of the most highly-connected device architecture. Even more surprisingly, by incorporating crosstalk into our last noise model, we find that, as error rates for crosstalk approach realistic values, the benefits of utilizing a bilinear array with advanced connectivity vanish. Our results highlight the limitations of adding local connectivity to near-term spin-qubit devices, and can be readily adapted to other qubit technologies. The framework developed here can be used for analyzing quantum entanglement on a device before fabrication, informing experimentalists on concomitant realistic expectations. △ Less

Submitted 4 March, 2025; v1 submitted 17 December, 2024; originally announced December 2024.

Journal ref: PRX Quantum 6, 020307 (2025)

Baseband control of single-electron silicon spin qubits in two dimensions

Authors: Florian K. Unseld, Brennan Undseth, Eline Raymenants, Yuta Matsumoto, Saurabh Karwal, Oriol Pietx-Casas, Alexander S. Ivlev, Marcel Meyer, Amir Sammak, Menno Veldhorst, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method of high-fidelity single-spin control in silicon. However, the resulting architectural limitations have restrained silicon quantum processors to one-dimensional arrays, and heating effects from the associated microwave dissipation exacerbates crosstalk during multi-qubit operations. In contrast, qubit control based o… ▽ More Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method of high-fidelity single-spin control in silicon. However, the resulting architectural limitations have restrained silicon quantum processors to one-dimensional arrays, and heating effects from the associated microwave dissipation exacerbates crosstalk during multi-qubit operations. In contrast, qubit control based on hopping spins has recently emerged as a compelling primitive for high-fidelity baseband control in sparse two-dimensional hole arrays in germanium. In this work, we commission a $^{28}$Si/SiGe 2x2 quantum dot array both as a four-qubit device with pairwise exchange interactions using established EDSR techniques and as a two-qubit device using baseband hopping control. In this manner, we can evaluate the two modes of operation in terms of fidelity, coherence, and crosstalk. We establish a lower bound on the fidelity of the hopping gate of 99.50(6)%, which is similar to the average fidelity of the resonant gate of 99.54(4)%. Lowering the external field to reach the hopping regime nearly doubles the measured $T_2^{\mathrm{H}}$, suggesting a reduced coupling to charge noise. Finally, the hopping gate circumvents the transient pulse-induced resonance shift. To further motivate the hopping gate approach as an attractive means of scaling silicon spin-qubit arrays, we propose an extensible nanomagnet design that enables engineered baseband control of large spin arrays. △ Less

Submitted 6 December, 2024; originally announced December 2024.

Comments: main text with 12 pages and 5 figures, methods and extended data and supplementary materials with 22 pages and 11 figures and 1 table, in a single file

High-fidelity single-spin shuttling in silicon

Authors: Maxim De Smet, Yuta Matsumoto, Anne-Marije J. Zwerver, Larysa Tryputen, Sander L. de Snoo, Sergey V. Amitonov, S. R. Katiraee-Far, Amir Sammak, Nodar Samkharadze, Önder Gül, Rick N. M. Wasserman, E. Greplová, Maximilian Rimbach-Russ, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms… ▽ More The computational power and fault-tolerance of future large-scale quantum processors derive in large part from the connectivity between the qubits. One approach to increase connectivity is to engineer qubit-qubit interactions at a distance. Alternatively, the connectivity can be increased by physically displacing the qubits. This has been explored in trapped-ion experiments and using neutral atoms trapped with optical tweezers. For semiconductor spin qubits, several studies have investigated spin coherent shuttling of individual electrons, but high-fidelity transport over extended distances remains to be demonstrated. Here we report shuttling of an electron inside an isotopically purified Si/SiGe heterostructure using electric gate potentials. First, we form static quantum dots, and study how spin coherence decays as we repeatedly move a single electron between up to five dots. Next, we create a traveling wave potential to transport an electron in a moving quantum dot. This second method shows substantially better spin coherence than the first. It allows us to displace an electron over an effective distance of 10 $μ$m in under 200 ns with an average fidelity of 99.5%. These results will guide future efforts to realize large-scale semiconductor quantum processors, making use of electron shuttling both within and between qubit arrays. △ Less

Submitted 12 June, 2025; v1 submitted 11 June, 2024; originally announced June 2024.

Comments: 15 pages, 15 figures

Universal control of four singlet-triplet qubits

Authors: Xin Zhang, Elizaveta Morozova, Maximilian Rimbach-Russ, Daniel Jirovec, Tzu-Kan Hsiao, Pablo Cova Fariña, Chien-An Wang, Stefan D. Oosterhout, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubi… ▽ More The coherent control of interacting spins in semiconductor quantum dots is of strong interest for quantum information processing as well as for studying quantum magnetism from the bottom up. Here, we present a $2\times4$ germanium quantum dot array with full and controllable interactions between nearest-neighbor spins. As a demonstration of the level of control, we define four singlet-triplet qubits in this system and show two-axis single-qubit control of each qubit and SWAP-style two-qubit gates between all neighbouring qubit pairs, yielding average single-qubit gate fidelities of 99.49(8)-99.84(1)% and Bell state fidelities of 73(1)-90(1)%. Combining these operations, we experimentally implement a circuit designed to generate and distribute entanglement across the array. A remote Bell state with a fidelity of 75(2)% and concurrence of 22(4)% is achieved. These results highlight the potential of singlet-triplet qubits as a competing platform for quantum computing and indicate that scaling up the control of quantum dot spins in extended bilinear arrays can be feasible. △ Less

Submitted 23 July, 2024; v1 submitted 26 December, 2023; originally announced December 2023.

Comments: In the updated version, data on single- and two-qubit gate fidelities, as well as two-qubit Bell state fidelities, have been added

Modeling and Experimental Validation of the Intrinsic SNR in Spin Qubit Gate-Based Readout and Its Impacts on Readout Electronics

Authors: Bagas Prabowo, Jurgen Dijkema, Xiao Xue, Fabio Sebastiano, Lieven M. K. Vandersypen, Masoud Babaie

Abstract: In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple qubits to be read out simultaneously. This paper introduces a theoretical framework to evaluate the effect of various parameters, such as the readout probe power, r… ▽ More In semiconductor spin quantum bits (qubits), the radio-frequency (RF) gate-based readout is a promising solution for future large-scale integration, as it allows for a fast, frequency-multiplexed readout architecture, enabling multiple qubits to be read out simultaneously. This paper introduces a theoretical framework to evaluate the effect of various parameters, such as the readout probe power, readout chain's noise performance, and integration time on the intrinsic readout signal-to-noise ratio (SNR), and thus readout fidelity of RF gate-based readout systems. By analyzing the underlying physics of spin qubits during readout, this work proposes a qubit readout model that takes into account the qubit's quantum mechanical properties, providing a way to evaluate the trade-offs among the aforementioned parameters. The validity of the proposed model is evaluated by comparing the simulation and experimental results. The proposed analytical approach, the developed model, and the experimental results enable designers to optimize the entire readout chain effectively, thus leading to a faster, lower-power readout system with integrated cryogenic electronics. △ Less

Submitted 14 December, 2023; originally announced December 2023.

Two-qubit logic between distant spins in silicon

Authors: Jurgen Dijkema, Xiao Xue, Patrick Harvey-Collard, Maximilian Rimbach-Russ, Sander L. de Snoo, Guoji Zheng, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Direct interactions between quantum particles naturally fall off with distance. For future-proof qubit architectures, however, it is important to avail of interaction mechanisms on different length scales. In this work, we utilize a superconducting resonator to facilitate a coherent interaction between two semiconductor spin qubits 250 $μ$m apart. This separation is several orders of magnitude lar… ▽ More Direct interactions between quantum particles naturally fall off with distance. For future-proof qubit architectures, however, it is important to avail of interaction mechanisms on different length scales. In this work, we utilize a superconducting resonator to facilitate a coherent interaction between two semiconductor spin qubits 250 $μ$m apart. This separation is several orders of magnitude larger than for the commonly employed direct interaction mechanisms in this platform. We operate the system in a regime where the resonator mediates a spin-spin coupling through virtual photons. We report anti-phase oscillations of the populations of the two spins with controllable frequency. The observations are consistent with iSWAP oscillations and ten nanosecond entangling operations. These results hold promise for scalable networks of spin qubit modules on a chip. △ Less

Submitted 25 October, 2023; originally announced October 2023.

Comments: 17 pages, 9 figures

Journal ref: Nature Physics (2024)

Single-electron occupation in quantum dot arrays at selectable plunger gate voltage

Authors: Marcel Meyer, Corentin Déprez, Ilja N. Meijer, Florian K. Unseld, Saurabh Karwal, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen, Menno Veldhorst

Abstract: The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the… ▽ More The small footprint of semiconductor qubits is favourable for scalable quantum computing. However, their size also makes them sensitive to their local environment and variations in gate structure. Currently, each device requires tailored gate voltages to confine a single charge per quantum dot, clearly challenging scalability. Here, we tune these gate voltages and equalize them solely through the temporary application of stress voltages. In a double quantum dot, we reach a stable (1,1) charge state at identical and predetermined plunger gate voltage and for various interdot couplings. Applying our findings, we tune a 2$\times$2 quadruple quantum dot such that the (1,1,1,1) charge state is reached when all plunger gates are set to 1 V. The ability to define required gate voltages may relax requirements on control electronics and operations for spin qubit devices, providing means to advance quantum hardware. △ Less

Submitted 7 September, 2023; originally announced September 2023.

Low disorder and high valley splitting in silicon

Authors: Davide Degli Esposti, Lucas E. A. Stehouwer, Önder Gül, Nodar Samkharadze, Corentin Déprez, Marcel Meyer, Ilja N. Meijer, Larysa Tryputen, Saurabh Karwal, Marc Botifoll, Jordi Arbiol, Sergey V. Amitonov, Lieven M. K. Vandersypen, Amir Sammak, Menno Veldhorst, Giordano Scappucci

Abstract: The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductio… ▽ More The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically-purified, strained quantum wells with high mobility of 3.14(8)$\times$10$^5$ cm$^2$/Vs and low percolation density of 6.9(1)$\times$10$^{10}$ cm$^{-2}$. These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) $μ$eV/Hz$^{1/2}$ and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors. △ Less

Submitted 2 February, 2024; v1 submitted 6 September, 2023; originally announced September 2023.

Exciton transport in a germanium quantum dot ladder

Authors: T. -K. Hsiao, P. Cova Fariña, S. D. Oosterhout, D. Jirovec, X. Zhang, C. J. van Diepen, W. I. L. Lawrie, C. -A. Wang, A. Sammak, G. Scappucci, M. Veldhorst, E. Demler, L. M. K. Vandersypen

Abstract: Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a g… ▽ More Quantum systems with engineered Hamiltonians can be used as simulators of many-body physics problems to provide insights beyond the capabilities of classical computers. Semiconductor gate-defined quantum dot arrays have emerged as a versatile platform for quantum simulation of generalized Fermi-Hubbard physics, one of the richest playgrounds in condensed matter physics. In this work, we employ a germanium 4$\times$2 quantum dot array and show that the naturally occurring long-range Coulomb interaction can lead to exciton formation and transport. We tune the quantum dot ladder into two capacitively-coupled channels and exploit Coulomb drag to probe the binding of electrons and holes. Specifically, we shuttle an electron through one leg of the ladder and observe that a hole is dragged along in the second leg under the right conditions. This corresponds to a transition from single-electron transport in one leg to exciton transport along the ladder. Our work paves the way for the study of excitonic states of matter in quantum dot arrays. △ Less

Submitted 5 July, 2023; originally announced July 2023.

Comments: 15 pages and 13 figures

Journal ref: Phys. Rev. X 14, 011048 (2024)

A 2D quantum dot array in planar $^{28}$Si/SiGe

Authors: Florian K. Unseld, Marcel Meyer, Mateusz T. Mądzik, Francesco Borsoi, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking… ▽ More Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking advantage of high-quality heterostructures and carefully designed gate patterns, we are able to form a tunnel coupled 2 $\times$ 2 quantum dot array in a $^{28}$Si/SiGe heterostructure. We are able to load a single electron in all four quantum dots, thus reaching the (1,1,1,1) charge state. Furthermore we characterise and control the tunnel coupling between all pairs of dots by measuring polarisation lines over a wide range of barrier gate voltages. Tunnel couplings can be tuned from about $30~\rm μeV$ up to approximately $400~\rm μeV$. These experiments provide a first step toward the operation of spin qubits in $^{28}$Si/SiGe quantum dots in two dimensions. △ Less

Submitted 6 June, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: 8 pages, 6 figures

Hotter is easier: unexpected temperature dependence of spin qubit frequencies

Authors: Brennan Undseth, Oriol Pietx-Casas, Eline Raymenants, Mohammad Mehmandoost, Mateusz T. Mądzik, Stephan G. J. Philips, Sander L. de Snoo, David J. Michalak, Sergey V. Amitonov, Larysa Tryputen, Brian Paquelet Wuetz, Viviana Fezzi, Davide Degli Esposti, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Workarounds for small devices, including pr… ▽ More As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Workarounds for small devices, including prepulsing with an off-resonant microwave burst to bring a device to a steady-state, wait times prior to measurement, and qubit-specific calibrations all bode ill for device scalability. Here, we make substantial progress in understanding and overcoming this effect. We report a surprising non-monotonic relation between mixing chamber temperature and spin Larmor frequency which is consistent with observed frequency shifts induced by microwave and baseband control signals. We find that purposefully operating the device at 200 mK greatly suppresses the adverse heating effect while not compromising qubit coherence or single-qubit fidelity benchmarks. Furthermore, systematic non-Markovian crosstalk is greatly reduced. Our results provide a straightforward means of improving the quality of multi-spin control while simplifying calibration procedures for future spin-based quantum processors. △ Less

Submitted 28 April, 2023; v1 submitted 25 April, 2023; originally announced April 2023.

Comments: 17 pages, 11 figures

Journal ref: Phys. Rev. X 13, 041015 (2023)

Simple framework for systematic high-fidelity gate operations

Authors: Maximilian Rimbach-Russ, Stephan G. J. Philips, Xiao Xue, Lieven M. K. Vandersypen

Abstract: Semiconductor spin qubits demonstrated single-qubit gates with fidelities up to $99.9\%$ benchmarked in the single-qubit subspace. However, tomographic characterizations reveals non-negligible crosstalk errors in a larger space. Additionally, it was long thought that the two-qubit gate performance is limited by charge noise which couples to the qubits via the exchange interaction. Here, we show th… ▽ More Semiconductor spin qubits demonstrated single-qubit gates with fidelities up to $99.9\%$ benchmarked in the single-qubit subspace. However, tomographic characterizations reveals non-negligible crosstalk errors in a larger space. Additionally, it was long thought that the two-qubit gate performance is limited by charge noise which couples to the qubits via the exchange interaction. Here, we show that coherent error sources such as a limited bandwidth of the control signals, diabaticity errors, microwave crosstalk, and non-linear transfer functions can equally limit the fidelity. We report a simple theoretical framework for pulse optimization that relates erroneous dynamics to spectral concentration problems and allows for the reuse of existing signal shaping methods on a larger set of gate operations. We apply this framework to common gate operations for spin qubits and show that simple pulse shaping techniques can significantly improve the performance of these gate operations in the presence of such coherent error sources. The methods presented in the paper were used to demonstrate two-qubit gate fidelities with $F>99.5\%$ in Ref.~[Xue et al, Nature 601, 343]. We also find that single and two-qubit gates can be optimized using the same pulse shape. We use analytic derivations and numerical simulations to arrive at predicted gate fidelities greater than $99.9\%$ with duration less than $4/(Δf)$ where $Δf$ is the difference in qubit frequencies. △ Less

Submitted 29 November, 2022; originally announced November 2022.

Comments: 18 pages, 4 figures

Reducing charge noise in quantum dots by using thin silicon quantum wells

Authors: B. Paquelet Wuetz, D. Degli Esposti, A. M. J. Zwerver, S. V. Amitonov, M. Botifoll, J. Arbiol, A. Sammak, L. M. K. Vandersypen, M. Russ, G. Scappucci

Abstract: Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure a… ▽ More Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a $^{28}$Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick $^{28}$Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29$\pm$0.02 $μ$eV/sqrt(Hz) at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to cz-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system. △ Less

Submitted 15 September, 2022; originally announced September 2022.

Journal ref: Nature Communications, 14, 1385 (2023)

Shuttling an electron spin through a silicon quantum dot array

Authors: A. M. J. Zwerver, S. V. Amitonov, S. L. de Snoo, M. T. Mądzik, M. Russ, A. Sammak, G. Scappucci, L. M. K. Vandersypen

Abstract: Coherent links between qubits separated by tens of micrometers are expected to facilitate scalable quantum computing architectures for spin qubits in electrically-defined quantum dots. These links create space for classical on-chip control electronics between qubit arrays, which can help to alleviate the so-called wiring bottleneck. A promising method of achieving coherent links between distant sp… ▽ More Coherent links between qubits separated by tens of micrometers are expected to facilitate scalable quantum computing architectures for spin qubits in electrically-defined quantum dots. These links create space for classical on-chip control electronics between qubit arrays, which can help to alleviate the so-called wiring bottleneck. A promising method of achieving coherent links between distant spin qubits consists of shuttling the spin through an array of quantum dots. Here, we use a linear array of four tunnel-coupled quantum dots in a 28Si/SiGe heterostructure to create a short quantum link. We move an electron spin through the quantum dot array by adjusting the electrochemical potential for each quantum dot sequentially. By pulsing the gates repeatedly, we shuttle an electron forward and backward through the array up to 250 times, which corresponds to a total distance of approximately 80 μm. We make an estimate of the spin-flip probability per hop in these experiments and conclude that this is well below 0.01% per hop. △ Less

Submitted 12 September, 2022; v1 submitted 2 September, 2022; originally announced September 2022.

Comments: 11 pages, 3 main figures, 6 appendix figures

Journal ref: PRX Quantum 4, 030303, (2023)

Nonlinear response and crosstalk of electrically driven silicon spin qubits

Authors: Brennan Undseth, Xiao Xue, Mohammad Mehmandoost, Maximilian Russ, Pieter T. Eendebak, Nodar Samkharadze, Amir Sammak, Viatcheslav V. Dobrovitski, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Micromagnet-based electric dipole spin resonance (EDSR) offers an attractive path for the near-term scaling of dense arrays of silicon spin qubits in gate-defined quantum dots while maintaining long coherence times and high control fidelities. However, accurately controlling dense arrays of qubits using a multiplexed drive will require an understanding of the crosstalk mechanisms that may reduce o… ▽ More Micromagnet-based electric dipole spin resonance (EDSR) offers an attractive path for the near-term scaling of dense arrays of silicon spin qubits in gate-defined quantum dots while maintaining long coherence times and high control fidelities. However, accurately controlling dense arrays of qubits using a multiplexed drive will require an understanding of the crosstalk mechanisms that may reduce operational fidelity. We identify a novel crosstalk mechanism whereby the Rabi frequency of a driven qubit is drastically changed when the drive of an adjacent qubit is turned on. These observations raise important considerations for scaling single-qubit control. △ Less

Submitted 6 January, 2023; v1 submitted 10 May, 2022; originally announced May 2022.

Comments: 12 pages, 9 figures

Journal ref: Phys. Rev. Applied 19, 044078 (2023)

Probing the Jaynes-Cummings Ladder with Spin Circuit Quantum Electrodynamics

Authors: Tobias Bonsen, Patrick Harvey-Collard, Maximilian Russ, Jurgen Dijkema, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: We report observations of transitions between excited states in the Jaynes-Cummings ladder of circuit quantum electrodynamics with electron spins (spin circuit QED). We show that unexplained features in recent experimental work correspond to such transitions and present an input-output framework that includes these effects. In new experiments, we first reproduce previous observations and then reve… ▽ More We report observations of transitions between excited states in the Jaynes-Cummings ladder of circuit quantum electrodynamics with electron spins (spin circuit QED). We show that unexplained features in recent experimental work correspond to such transitions and present an input-output framework that includes these effects. In new experiments, we first reproduce previous observations and then reveal both excited-state transitions and multiphoton transitions by increasing the probe power and using two-tone spectroscopy. This ability to probe the Jaynes-Cummings ladder is enabled by improvements in the coupling-to-decoherence ratio, and shows an increase in the maturity of spin circuit QED as an interesting platform for studying quantum phenomena. △ Less

Submitted 25 April, 2023; v1 submitted 10 March, 2022; originally announced March 2022.

Comments: 12 pages, 7 figures

Journal ref: Physical review letters, 130(13), 137001 (2023)

Universal control of a six-qubit quantum processor in silicon

Authors: Stephan G. J. Philips, Mateusz T. Mądzik, Sergey V. Amitonov, Sander L. de Snoo, Maximilian Russ, Nima Kalhor, Christian Volk, William I. L. Lawrie, Delphine Brousse, Larysa Tryputen, Brian Paquelet Wuetz, Amir Sammak, Menno Veldhorst, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity… ▽ More Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity of either single- or two-qubit operations, or initialization and readout. Here we increase the number of qubits and simultaneously achieve respectable fidelities for universal operation, state preparation and measurement. We design, fabricate and operate a six-qubit processor with a focus on careful Hamiltonian engineering, on a high level of abstraction to program the quantum circuits and on efficient background calibration, all of which are essential to achieve high fidelities on this extended system. State preparation combines initialization by measurement and real-time feedback with quantum-non-demolition measurements. These advances will allow for testing of increasingly meaningful quantum protocols and constitute a major stepping stone towards large-scale quantum computers. △ Less

Submitted 18 February, 2022; originally announced February 2022.

Comments: 38 pages (including supplementary material)

Long-range electron-electron interactions in quantum dot systems and applications in quantum chemistry

Authors: Johannes Knörzer, Cornelis J. van Diepen, Tzu-Kan Hsiao, Géza Giedke, Uditendu Mukhopadhyay, Christian Reichl, Werner Wegscheider, J. Ignacio Cirac, Lieven M. K. Vandersypen

Abstract: Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a c… ▽ More Long-range interactions play a key role in several phenomena of quantum physics and chemistry. To study these phenomena, analog quantum simulators provide an appealing alternative to classical numerical methods. Gate-defined quantum dots have been established as a platform for quantum simulation, but for those experiments the effect of long-range interactions between the electrons did not play a crucial role. Here we present the first detailed experimental characterization of long-range electron-electron interactions in an array of gate-defined semiconductor quantum dots. We demonstrate significant interaction strength among electrons that are separated by up to four sites, and show that our theoretical prediction of the screening effects matches well the experimental results. Based on these findings, we investigate how long-range interactions in quantum-dot arrays may be utilized for analog simulations of artificial quantum matter. We numerically show that about ten quantum dots are sufficient to observe binding for a one-dimensional $H_2$-like molecule. These combined experimental and theoretical results pave the way for future quantum simulations with quantum dot arrays and benchmarks of numerical methods in quantum chemistry. △ Less

Submitted 14 February, 2022; originally announced February 2022.

Comments: 6 pages, 3 figures, supplemental material: 4 pages, 3 figures

Journal ref: Phys. Rev. Research 4, 033043 (2022)

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E. A. Stehouwer, Anne-Marije J. Zwerver, Stephan G. J. Philips, Mateusz T. Mądzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey V. Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M. K. Vandersypen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, Giordano Scappucci

Abstract: Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor… ▽ More Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting. △ Less

Submitted 1 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Journal ref: Nature Communications 13, 7730 (2022)

Spiderweb array: A sparse spin-qubit array

Authors: Jelmer M. Boter, Juan P. Dehollain, Jeroen P. G. van Dijk, Yuanxing Xu, Toivo Hensgens, Richard Versluis, Henricus W. L. Naus, James S. Clarke, Menno Veldhorst, Fabio Sebastiano, Lieven M. K. Vandersypen

Abstract: One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowin… ▽ More One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowing for a significant reduction in the number of signal connections at the chip boundary. By arranging the qubits in a two-dimensional (2D) array with $\sim$12 $μ$m pitch, we create space to implement locally integrated sample-and-hold circuits. This allows to offset the inhomogeneities in the potential landscape across the array and to globally share the majority of the control signals for qubit operations. We make use of advanced circuit modeling software to go beyond conceptual drawings of the component layout, to assess the feasibility of the scheme through a concrete floor plan, including estimates of footprints for quantum and classical electronics, as well as routing of signal lines across the chip using different interconnect layers. We make use of local demultiplexing circuits to achieve an efficient signal-connection scaling leading to a Rent's exponent as low as $p = 0.43$. Furthermore, we use available data from state-of-the-art spin qubit and microelectronics technology development, as well as circuit models and simulations, to estimate the operation frequencies and power consumption of a million-qubit processor. This work presents a novel and complementary approach to previously proposed architectures, focusing on a feasible scheme to integrating quantum and classical hardware, and significantly closing the gap towards a fully CMOS-compatible quantum computer implementation. △ Less

Submitted 24 August, 2022; v1 submitted 30 September, 2021; originally announced October 2021.

Comments: 19 pages, 16 figures

Journal ref: Phys. Rev. Applied 18, 024053 (2022)

Coherent spin-spin coupling mediated by virtual microwave photons

Authors: Patrick Harvey-Collard, Jurgen Dijkema, Guoji Zheng, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spi… ▽ More We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spin linewidths is observed with an exchange splitting around $2J/2π= 20 \ \text{MHz}$. In addition, photon-number states are resolved from the shift $2χ_s/2π= -13 \ \text{MHz}$ that they induce on the spin frequency. These observations demonstrate that we reach the strong dispersive regime of circuit quantum electrodynamics with spins. Achieving spin-spin coupling without real photons is essential to long-range two-qubit gates between spin qubits and scalable networks of spin qubits on a chip. △ Less

Submitted 12 May, 2022; v1 submitted 2 August, 2021; originally announced August 2021.

Journal ref: Phys. Rev. X 12, 021026 (2022)

Computing with spin qubits at the surface code error threshold

Authors: Xiao Xue, Maximilian Russ, Nodar Samkharadze, Brennan Undseth, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface… ▽ More High-fidelity control of quantum bits is paramount for the reliable execution of quantum algorithms and for achieving fault-tolerance, the ability to correct errors faster than they occur. The central requirement for fault-tolerance is expressed in terms of an error threshold. Whereas the actual threshold depends on many details, a common target is the ~1% error threshold of the well-known surface code. Reaching two-qubit gate fidelities above 99% has been a long-standing major goal for semiconductor spin qubits. These qubits are well positioned for scaling as they can leverage advanced semiconductor technology. Here we report a spin-based quantum processor in silicon with single- and two-qubit gate fidelities all above 99.5%, extracted from gate set tomography. The average single-qubit gate fidelities remain above 99% when including crosstalk and idling errors on the neighboring qubit. Utilizing this high-fidelity gate set, we execute the demanding task of calculating molecular ground state energies using a variational quantum eigensolver algorithm. Now that the 99% barrier for the two-qubit gate fidelity has been surpassed, semiconductor qubits have gained credibility as a leading platform, not only for scaling but also for high-fidelity control. △ Less

Submitted 1 July, 2021; originally announced July 2021.

Comments: 19 pages, 11 figures

Journal ref: Nature 601, 343-347 (2022)

Quantum simulation of antiferromagnetic Heisenberg chain with gate-defined quantum dots

Authors: C. J. van Diepen, T. -K. Hsiao, U. Mukhopadhyay, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum system… ▽ More Quantum-mechanical correlations of interacting fermions result in the emergence of exotic phases. Magnetic phases naturally arise in the Mott-insulator regime of the Fermi-Hubbard model, where charges are localized and the spin degree of freedom remains. In this regime, the occurrence of phenomena such as resonating valence bonds, frustrated magnetism, and spin liquids is predicted. Quantum systems with engineered Hamiltonians can be used as simulators of such spin physics to provide insights beyond the capabilities of analytical methods and classical computers. To be useful, methods for the preparation of intricate many-body spin states and access to relevant observables are required. Here, we show the quantum simulation of magnetism in the Mott-insulator regime with a linear quantum-dot array. We characterize the energy spectrum for a Heisenberg spin chain, from which we can identify when the conditions for homogeneous exchange couplings are met. Next, we study the multispin coherence with global exchange oscillations in both the singlet and triplet subspace of the Heisenberg Hamiltonian. Last, we adiabatically prepare the low-energy global singlet of the homogeneous spin chain and probe it with two-spin singlettriplet measurements on each nearest-neighbor pair and the correlations therein. The methods and control presented here open new opportunities for the simulation of quantum magnetism benefiting from the flexibility in tuning and layout of gate-defined quantum-dot arrays. △ Less

Submitted 17 November, 2021; v1 submitted 15 March, 2021; originally announced March 2021.

Comments: 15 pages, 11 figures

Journal ref: Physical Review X 11, 041025 (2021)

Qubits made by advanced semiconductor manufacturing

Authors: A. M. J. Zwerver, T. Krähenmann, T. F. Watson, L. Lampert, H. C. George, R. Pillarisetty, S. A. Bojarski, P. Amin, S. V. Amitonov, J. M. Boter, R. Caudillo, D. Corras-Serrano, J. P. Dehollain, G. Droulers, E. M. Henry, R. Kotlyar, M. Lodari, F. Luthi, D. J. Michalak, B. K. Mueller, S. Neyens, J. Roberts, N. Samkharadze, G. Zheng, O. K. Zietz , et al. (4 additional authors not shown)

Abstract: Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr… ▽ More Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer △ Less

Submitted 29 January, 2021; originally announced January 2021.

Comments: 23 pages, 4 figures, 12 supplementary figures

Journal ref: Nature Electronics 5, 184-190 (2022)

Radio frequency reflectometry in silicon-based quantum dots

Authors: Y. -Y. Liu, S. G. J. Philips, L. A. Orona, N. Samkharadze, T. McJunkin, E. R. MacQuarrie, M. A. Eriksson, L. M. K. Vandersypen, A. Yacoby

Abstract: RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a se… ▽ More RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $μ$s. △ Less

Submitted 6 January, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Applied 16, 014057 (2021)

CMOS-based cryogenic control of silicon quantum circuits

Authors: Xiao Xue, Bishnu Patra, Jeroen P. G. van Dijk, Nodar Samkharadze, Sushil Subramanian, Andrea Corna, Charles Jeon, Farhana Sheikh, Esdras Juarez-Hernandez, Brando Perez Esparza, Huzaifa Rampurawala, Brent Carlton, Surej Ravikumar, Carlos Nieva, Sungwon Kim, Hyung-Jin Lee, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Fabio Sebastiano, Masoud Babaie, Stefano Pellerano, Edoardo Charbon, Lieven M. K. Vandersypen

Abstract: The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, a major bottleneck appears between the quantum chip in a dilution refrigerator and the room temperature electronics. Advanced l… ▽ More The most promising quantum algorithms require quantum processors hosting millions of quantum bits when targeting practical applications. A major challenge towards large-scale quantum computation is the interconnect complexity. In current solid-state qubit implementations, a major bottleneck appears between the quantum chip in a dilution refrigerator and the room temperature electronics. Advanced lithography supports the fabrication of both CMOS control electronics and qubits in silicon. When the electronics are designed to operate at cryogenic temperatures, it can ultimately be integrated with the qubits on the same die or package, overcoming the wiring bottleneck. Here we report a cryogenic CMOS control chip operating at 3K, which outputs tailored microwave bursts to drive silicon quantum bits cooled to 20mK. We first benchmark the control chip and find electrical performance consistent with 99.99% fidelity qubit operations, assuming ideal qubits. Next, we use it to coherently control actual silicon spin qubits and find that the cryogenic control chip achieves the same fidelity as commercial instruments. Furthermore, we highlight the extensive capabilities of the control chip by programming a number of benchmarking protocols as well as the Deutsch-Josza algorithm on a two-qubit quantum processor. These results open up the path towards a fully integrated, scalable silicon-based quantum computer. △ Less

Submitted 29 September, 2020; originally announced September 2020.

High-fidelity two-qubit gates in silicon above one Kelvin

Authors: L. Petit, M. Russ, H. G. J. Eenink, W. I. L. Lawrie, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to exec… ▽ More Spin qubits in quantum dots define an attractive platform for scalable quantum information because of their compatibility with semiconductor manufacturing, their long coherence times, and the ability to operate at temperatures exceeding one Kelvin. Qubit logic can be implemented by pulsing the exchange interaction or via driven rotations. Here, we show that these approaches can be combined to execute a multitude of native two-qubit gates in a single device, reducing the operation overhead to perform quantum algorithms. We demonstrate, at a temperature above one Kelvin, single-qubit rotations together with the two-qubit gates CROT, CPHASE and SWAP. Furthermore we realize adiabatic, diabatic and composite sequences to optimize the qubit control fidelity and the gate time. We find two-qubit gates that can be executed within 67 ns and by theoretically analyzing the experimental noise sources we predict fidelities exceeding 99%. This promises fault-tolerant operation using quantum hardware that can be embedded with classical electronics for quantum integrated circuits. △ Less

Submitted 17 July, 2020; originally announced July 2020.

Comments: 7 pages, 5 figures

Low percolation density and charge noise with holes in germanium

Authors: M. Lodari, N. W. Hendrickx, W. I. L. Lawrie, T. -K. Hsiao, L. M. K. Vandersypen, A. Sammak, M. Veldhorst, G. Scappucci

Abstract: We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of $2.1\times10^{10}~\text{cm}^{-2}$, indicative of a very low disorder potential landscape experi… ▽ More We engineer planar Ge/SiGe heterostructures for low disorder and quiet hole quantum dot operation by positioning the strained Ge channel 55~nm below the semiconductor/dielectric interface. In heterostructure field effect transistors, we measure a percolation density for two-dimensional hole transport of $2.1\times10^{10}~\text{cm}^{-2}$, indicative of a very low disorder potential landscape experienced by holes in the buried Ge channel. These Ge heterostructures support quiet operation of hole quantum dots and we measure charge noise levels that are below the detection limit $\sqrt{S_\text{E}}=0.2~μ\text{eV}/\sqrt{\text{Hz}}$ at 1 Hz. These results establish planar Ge as a promising platform for scaled two-dimensional spin qubit arrays. △ Less

Submitted 13 July, 2020; originally announced July 2020.

On-chip microwave filters for high-impedance resonators with gate-defined quantum dots

Authors: Patrick Harvey-Collard, Guoji Zheng, Jurgen Dijkema, Nodar Samkharadze, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertent… ▽ More Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertently lead to a parasitic port through which microwave photons can leak, thereby reducing the quality factor of the resonator. This is particularly the case for high-impedance resonators, as the ratio of their total capacitance over the parasitic port capacitance is smaller, leading to larger microwave leakage than for 50-$Ω$ resonators. Here, we introduce an implementation of on-chip filters to suppress the microwave leakage. The filters comprise a high-kinetic-inductance nanowire inductor and a thin-film capacitor. The filter has a small footprint and can be placed close to the resonator, confining microwaves to a small area of the chip. The inductance and capacitance of the filter elements can be varied over a wider range of values than their typical spiral inductor and interdigitated capacitor counterparts. We demonstrate that the total linewidth of a 6.4 GHz and approximately 3-k$Ω$ resonator can be improved down to 540 kHz using these filters. △ Less

Submitted 2 October, 2020; v1 submitted 11 May, 2020; originally announced May 2020.

Journal ref: Phys. Rev. Applied 14, 034025 (2020)

On-chip Integration of Si/SiGe-based Quantum Dots and Switched-capacitor Circuits

Authors: Y. Xu, F. K. Unseld, A. Corna, A. M. J. Zwerver, A. Sammak, D. Brousse, N. Samkharadze, S. V. Amitonov, M. Veldhorst, G. Scappucci, R. Ishihara, L. M. K. Vandersypen

Abstract: Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an effective strategy to overcome this bottleneck. In the case of gate-defined quantum dot arrays, specific static voltages need to be applied to many gates simult… ▽ More Solid-state qubits integrated on semiconductor substrates currently require at least one wire from every qubit to the control electronics, leading to a so-called wiring bottleneck for scaling. Demultiplexing via on-chip circuitry offers an effective strategy to overcome this bottleneck. In the case of gate-defined quantum dot arrays, specific static voltages need to be applied to many gates simultaneously to realize electron confinement. When a charge-locking structure is placed between the quantum device and the demultiplexer, the voltage can be maintained locally. In this study, we implement a switched-capacitor circuit for charge-locking and use it to float the plunger gate of a single quantum dot. Parallel plate capacitors, transistors and quantum dot devices are monolithically fabricated on a Si/SiGe-based substrate to avoid complex off-chip routing. We experimentally study the effects of the capacitor and transistor size on the voltage accuracy of the floating node. Furthermore, we demonstrate that the electrochemical potential of the quantum dot can follow a 100 Hz pulse signal while the dot is partially floating, which is essential for applying this strategy in qubit experiments. △ Less

Submitted 8 May, 2020; originally announced May 2020.

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures

Authors: Anastasios Pateras, Joonkyu Park, Youngjun Ahn, Jack A. Tilka, Martin V. Holt, Christian Reichl, Werner Wegscheider, Timothy A. Baart, Juan Pablo Dehollain, Uditendu Mukhopadhyay, Lieven M. K. Vandersypen, Paul G. Evans

Abstract: Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic ele… ▽ More Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Journal ref: Nano Lett. 18, 2780 (2018)

Electron cascade for spin readout

Authors: C. J. van Diepen, T. -K. Hsiao, U. Mukhopadhyay, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge tran… ▽ More Electrons confined in semiconductor quantum dot arrays have both charge and spin degrees of freedom. The spin provides a well-controllable and long-lived qubit implementation. The charge configuration in the dot array is influenced by Coulomb repulsion, and the same interaction enables charge sensors to probe this configuration. Here we show that the Coulomb repulsion allows an initial charge transition to induce subsequent charge transitions, inducing a cascade of electron hops, like toppling dominoes. A cascade can transmit information along a quantum dot array over a distance that extends by far the effect of the direct Coulomb repulsion. We demonstrate that a cascade of electrons can be combined with Pauli spin blockade to read out spins using a remote charge sensor. We achieve > 99.9% spin readout fidelity in 1.7 $\mathrmμ$s. The cascade-based readout enables operation of a densely-packed two-dimensional quantum dot array with charge sensors placed at the periphery. The high connectivity of such arrays greatly improves the capabilities of quantum dot systems for quantum computation and simulation. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Comments: 13 pages, 6 figures

Journal ref: Nature Communications 12, 77 (2021)

Efficient orthogonal control of tunnel couplings in a quantum dot array

Authors: T. -K. Hsiao, C. J. van Diepen, U. Mukhopadhyay, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific… ▽ More Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all inter-dot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays. △ Less

Submitted 21 January, 2020; originally announced January 2020.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. Applied 13, 054018 (2020)

A sparse spin qubit array with integrated control electronics

Authors: Jelmer M. Boter, Juan P. Dehollain, Jeroen P. G. van Dijk, Toivo Hensgens, Richard Versluis, James S. Clarke, Menno Veldhorst, Fabio Sebastiano, Lieven M. K. Vandersypen

Abstract: Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer. Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer. △ Less

Submitted 13 December, 2019; originally announced December 2019.

Comments: Paper accompanying an invited talk at the 2019 IEEE International Electron Devices Meeting (IEDM), December 7-11, 2019

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM), 31.4. 1-31.4. 4 (2020)

Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit

Authors: Xiao Xue, Benjamin D'Anjou, Thomas F. Watson, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, William A. Coish, Lieven M. K. Vandersypen

Abstract: Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logica… ▽ More Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logical qubit and the other serving as the ancilla. Making use of a two-qubit controlled-rotation gate, the state of the logical qubit is mapped onto the ancilla, followed by a destructive readout of the ancilla. Repeating this procedure enhances the logical readout fidelity from $75.5\pm 0.3\%$ to $94.5 \pm 0.2\%$ after 15 ancilla readouts. In addition, we compare the conventional thresholding method with an improved signal processing method called soft decoding that makes use of analog information in the readout signal to better estimate the state of the logical qubit. We demonstrate that soft decoding leads to a significant reduction in the required number of repetitions when the readout errors become limited by Gaussian noise, for instance in the case of readouts with a low signal-to-noise ratio. These results pave the way for the implementation of quantum error correction with spin qubits in silicon. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. X 10, 021006 (2020)

Universal quantum logic in hot silicon qubits

Authors: L. Petit, H. G. J. Eenink, M. Russ, W. I. L. Lawrie, N. W. Hendrickx, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is ext… ▽ More Quantum computation requires many qubits that can be coherently controlled and coupled to each other. Qubits that are defined using lithographic techniques are often argued to be promising platforms for scalability, since they can be implemented using semiconductor fabrication technology. However, leading solid-state approaches function only at temperatures below 100 mK, where cooling power is extremely limited, and this severely impacts the perspective for practical quantum computation. Recent works on spins in silicon have shown steps towards a platform that can be operated at higher temperatures by demonstrating long spin lifetimes, gate-based spin readout, and coherent single-spin control, but the crucial two-qubit logic gate has been missing. Here we demonstrate that silicon quantum dots can have sufficient thermal robustness to enable the execution of a universal gate set above one Kelvin. We obtain single-qubit control via electron-spin-resonance (ESR) and readout using Pauli spin blockade. We show individual coherent control of two qubits and measure single-qubit fidelities up to 99.3 %. We demonstrate tunability of the exchange interaction between the two spins from 0.5 up to 18 MHz and use this to execute coherent two-qubit controlled rotations (CROT). The demonstration of `hot' and universal quantum logic in a semiconductor platform paves the way for quantum integrated circuits hosting the quantum hardware and their control circuitry all on the same chip, providing a scalable approach towards practical quantum information. △ Less

Submitted 11 October, 2019; originally announced October 2019.

Journal ref: Nature 580, 355-359 (2020)

Quantum Dot Arrays in Silicon and Germanium

Authors: W. I. L. Lawrie, H. G. J. Eenink, N. W. Hendrickx, J. M. Boter, L. Petit, S. V. Amitonov, M. Lodari, B. Paquelet Wuetz, C. Volk, S. Philips, G. Droulers, N. Kalhor, F. van Riggelen, D. Brousse, A. Sammak, L. M. K. Vandersypen, G. Scappucci, M. Veldhorst

Abstract: Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereb… ▽ More Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating the fabrication of scaled structures such as linear and 2D arrays. Group IV semiconductors contain stable isotopes with zero nuclear spin and can thereby serve as excellent host for spins with long quantum coherence. Here we demonstrate group IV quantum dot arrays in silicon metal-oxide-semiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). We fabricate using a multi-layer technique to achieve tightly confined quantum dots and compare integration processes. While SiMOS can benefit from a larger temperature budget and Ge/SiGe can make ohmic contact to metals, the overlapping gate structure to define the quantum dots can be based on a nearly identical integration. We realize charge sensing in each platform, for the first time in Ge/SiGe, and demonstrate fully functional linear and two-dimensional arrays where all quantum dots can be depleted to the last charge state. In Si/SiGe, we tune a quintuple quantum dot using the N+1 method to simultaneously reach the few electron regime for each quantum dot. We compare capacitive cross talk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. These results constitute an excellent base for quantum computation with quantum dots and provide opportunities for each platform to be integrated with standard semiconductor manufacturing. △ Less

Submitted 14 September, 2019; originally announced September 2019.

Comments: Main text: 8 pages, 6 figures. Supporting Info: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 116, 080501 (2020)

Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots

Authors: H. G. J. Eenink, L. Petit, W. I. L. Lawrie, J. S. Clarke, L. M. K. Vandersypen, M. Veldhorst

Abstract: Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hu… ▽ More Extremely long coherence times, excellent single-qubit gate fidelities and two-qubit logic have been demonstrated with silicon metal-oxide-semiconductor spin qubits, making it one of the leading platforms for quantum information processing. Despite this, a long-standing challenge in this system has been the demonstration of tunable tunnel coupling between single electrons. Here we overcome this hurdle with gate-defined quantum dots and show couplings that can be tuned on and off for quantum operations. We use charge sensing to discriminate between the (2,0) and (1,1) charge states of a double quantum dot and show excellent charge sensitivity. We demonstrate tunable coupling up to 13 GHz, obtained by fitting charge polarization lines, and tunable tunnel rates down to below 1 Hz, deduced from the random telegraph signal. The demonstration of tunable coupling between single electrons in a silicon metal-oxide-semiconductor device provides significant scope for high-fidelity two-qubit logic toward quantum information processing with standard manufacturing. △ Less

Submitted 13 January, 2020; v1 submitted 19 July, 2019; originally announced July 2019.

Comments: 6 pages, 3 figures

Journal ref: Nano Letters 19 (12), 8653-8657 (2019)

Ab Initio Exact Diagonalization Simulation of the Nagaoka Transition in Quantum Dots

Authors: Yao Wang, Juan Pablo Dehollain, Fang Liu, Uditendu Mukhopadhyay, Mark S. Rudner, Lieven M. K. Vandersypen, Eugene Demler

Abstract: Recent progress of quantum simulators provides insight into the fundamental problems of strongly correlated systems. To adequately assess the accuracy of these simulators, the precise modeling of the many-body physics, with accurate model parameters, is crucially important. In this paper, we introduce an \emph{ab intio} exact diagonalization framework to compute the correlated physics of a few ele… ▽ More Recent progress of quantum simulators provides insight into the fundamental problems of strongly correlated systems. To adequately assess the accuracy of these simulators, the precise modeling of the many-body physics, with accurate model parameters, is crucially important. In this paper, we introduce an \emph{ab intio} exact diagonalization framework to compute the correlated physics of a few electrons in artificial potentials. We apply this approach to a quantum-dot system and study the magnetism of the correlated electrons, obtaining good agreement with recent experimental measurements. Through dot separation, potential detuning and control of single tunneling, we examine the Nagaoka transition and determine the robustness of the ferromagnetic state. While the standard Nagaoka theorem considers only a single-band Hubbard model, in this work we perform extensive $ab$ $intio$ calculations that include realistic multi-orbital conditions in which the level splitting is smaller than the interactions. This simulation complements the experiments and provides insight into the formation of ferromagnetism in correlated systems. More generally, our calculation sets the stage for further theoretical analysis of analog quantum simulators at a quantitative level. △ Less

Submitted 21 October, 2019; v1 submitted 2 July, 2019; originally announced July 2019.

Comments: 16 pages; 11 figures; accepted by Phys. Rev. B

Journal ref: Phys. Rev. B 100, 155133 (2019)

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

Authors: Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann, Thomas F. Watson, Vickram N. Premakumar, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

Abstract: We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting… ▽ More We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Comments: 6+6 pages, 4+3 figures

Journal ref: Phys. Rev. B 101, 235133 (2020)

Nagaoka ferromagnetism observed in a quantum dot plaquette

Authors: Juan P. Dehollain, Uditendu Mukhopadhyay, Vincent P. Michal, Yao Wang, Bernhard Wunsch, Christian Reichl, Werner Wegscheider, Mark S. Rudner, Eugene Demler, Lieven M. K. Vandersypen

Abstract: Engineered, highly-controllable quantum systems hold promise as simulators of emergent physics beyond the capabilities of classical computers. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been subject to debate for decades. Here we use a quantum simulator consisting o… ▽ More Engineered, highly-controllable quantum systems hold promise as simulators of emergent physics beyond the capabilities of classical computers. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been subject to debate for decades. Here we use a quantum simulator consisting of a four-site square plaquette of quantum dots to demonstrate Nagaoka ferromagnetism. This form of itinerant magnetism has been rigorously studied theoretically but has remained unattainable in experiment. We load the plaquette with three electrons and demonstrate the predicted emergence of spontaneous ferromagnetic correlations through pairwise measurements of spin. We find the ferromagnetic ground state is remarkably robust to engineered disorder in the on-site potentials and can induce a transition to the low-spin state by changing the plaquette topology to an open chain. This demonstration of Nagaoka ferromagnetism highlights that quantum simulators can be used to study physical phenomena that have not yet been observed in any system before. The work also constitutes an important step towards large-scale quantum dot simulators of correlated electron systems. △ Less

Submitted 4 March, 2020; v1 submitted 11 April, 2019; originally announced April 2019.

Comments: This version: main (8 pages, 6 figures) + supplementary (15 pages, 8 figures)

Rapid high-fidelity gate-based spin read-out in silicon

Authors: G. Zheng, N. Samkharadze, M. L. Noordam, N. Kalhor, D. Brousse, A. Sammak, G. Scappucci, L. M. K. Vandersypen

Abstract: Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. As the signal from a single electron spin is minute, different spin states are converted to different charge states. Charge detection so far mostly relied on external electrometers,… ▽ More Silicon spin qubits form one of the leading platforms for quantum computation. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. As the signal from a single electron spin is minute, different spin states are converted to different charge states. Charge detection so far mostly relied on external electrometers, which hinders scaling to two-dimensional spin qubit arrays. As an alternative, gate-based dispersive read-out based on off-chip lumped element resonators were introduced, but here integration times of 0.2 to 2 ms were required to achieve single-shot read-out. Here we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge susceptibility, distinguishing whether or not an electron can oscillate between the dots in response to the probe power. With this approach, we achieve a signal-to-noise ratio (SNR) of about six within an integration time of only 1 $μ$s. Using Pauli's exclusion principle for spin-to-charge conversion, we demonstrate single-shot read-out of a two-electron spin state with an average fidelity of $>$98% in 6 $μ$s. This result may form the basis of frequency multiplexed read-out in dense spin qubit systems without external electrometers, therefore simplifying the system architecture. △ Less

Submitted 3 January, 2019; originally announced January 2019.

Comments: 5 pages, 3 figures

Journal ref: Nature Nanotechnology (2019)

Loading a quantum-dot based "Qubyte" register

Authors: C. Volk, A. M. J. Zwerver, U. Mukhopadhyay, P. T. Eendebak, C. J. van Diepen, J. P. Dehollain, T. Hensgens, T. Fujita, C. Reichl, W. Wegscheider, L. M. K. Vandersypen

Abstract: Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots i… ▽ More Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots is unaffected. The method allows individual control of the number of electrons on each of the dots, as well as of the interdot tunnel rates. We use this technique to tune up a linear array of eight GaAs quantum dots such that they are occupied by one electron each. This new method overcomes a critical bottleneck in scaling up quantum-dot based qubit registers. △ Less

Submitted 2 January, 2019; originally announced January 2019.

Comments: 8 pages, 5 figures. Supplementary: 4 pages, 5 figures

Journal ref: npj Quantum Information 5, Article number: 29 (2019)

Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

Authors: X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M. K. Vandersypen

Abstract: We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity i… ▽ More We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 6+5 pages, 6 figures

Journal ref: Phys. Rev. X 9, 021011 (2019)