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Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators
Authors:
Yury Yu. Illarionov,
Theresia Knobloch,
Burkay Uzlu,
Alexander G. Banshikov,
Iliya A. Ivanov,
Viktor Sverdlov,
Mikhail I. Vexler,
Michael Waltl,
Zhenxing Wang,
Bibhas Manna,
Daniel Neumaier,
Max C. Lemme,
Nikolai S. Sokolov,
Tibor Grasser
Abstract:
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stabi…
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Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stability. Previously used amorphous oxides, such as SiO2 and Al2O3, however, typically suffer from oxide dangling bonds at the interface, high surface roughness and numerous border oxide traps. In order to address these challenges, here we use for the first time 2nm thick epitaxial CaF2 as a gate insulator in GFETs. By analyzing device-to-device variability for over 200 devices fabricated in two batches, we find that tens of them show similar gate transfer characteristics. Our statistical analysis of the hysteresis up to 175C has revealed that while an ambient-sensitive counterclockwise hysteresis can be present in some devices, the dominant mechanism is thermally activated charge trapping by border defects in CaF2 which results in the conventional clockwise hysteresis. We demonstrate that both the hysteresis and bias-temperature instabilities in our GFETs with CaF2 are comparable to similar devices with SiO2 and Al2O3. In particular, we achieve a small hysteresis below 0.01 V for equivalent oxide thickness (EOT) of about 1 nm at the electric fields up to 15 MV/cm and sweep times in the kilosecond range. Thus, our results demonstrate that crystalline CaF2 is a promising insulator for highly-stable GFETs.
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Submitted 20 September, 2023;
originally announced September 2023.
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Zero Bias Power Detector Circuits based on MoS$_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates
Authors:
Eros Reato,
Paula Palacios,
Burkay Uzlu,
Mohamed Saeed,
Annika Grundmann,
Zhenyu Wang,
Daniel S. Schneider,
Zhenxing Wang,
Michael Heuken,
Holger Kalisch,
Andrei Vescan,
Alexandra Radenovic,
Andras Kis,
Daniel Neumaier,
Renato Negra,
Max C. Lemme
Abstract:
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing dif…
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We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS$_2$, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes.
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Submitted 9 April, 2022; v1 submitted 9 February, 2022;
originally announced February 2022.
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Terahertz rectennas on flexible substrates based on one-dimensional metal-insulator-graphene diodes
Authors:
Andreas Hemmetter,
Xinxin Yang,
Zhenxing Wang,
Martin Otto,
Burkay Uzlu,
Marcel Andree,
Ullrich Pfeiffer,
Andrei Vorobiev,
Jan Stake,
Max C. Lemme,
Daniel Neumaier
Abstract:
Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a…
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Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator-graphene diode, which offers low-noise power detection at terahertz (THz) frequencies. The rectennas are fabricated on a flexible polyimide film in a scalable process by photolithography using graphene grown by chemical vapor deposition. A one-dimensional junction area reduces the junction capacitance and enables operation in the D-band (110 - 170 GHz). The rectenna on polyimide shows a maximum voltage responsivity of 80 V/W at 167 GHz in free space measurements and minimum noise equivalent power of 80 pW/$\sqrt{\text{Hz}}$.
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Submitted 22 June, 2021;
originally announced June 2021.
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Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning
Authors:
Theresia Knobloch,
Burkay Uzlu,
Yury Yu. Illarionov,
Zhenxing Wang,
Martin Otto,
Lado Filipovic,
Michael Waltl,
Daniel Neumaier,
Max C. Lemme,
Tibor Grasser
Abstract:
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped char…
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Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction of charge carriers originating from the 2D semiconductors with defects in the surrounding insulating materials. The resulting dynamically trapped charges are particularly relevant in field effect transistors (FETs) and can lead to a large hysteresis, which endangers stable circuit operation. Based on the notion that charge trapping is highly sensitive to the energetic alignment of the channel Fermi-level with the defect band in the insulator, we propose to optimize device stability by deliberately tuning the channel Fermi-level. Our approach aims to minimize the amount of electrically active border traps without modifying the total number of traps in the insulator. We demonstrate the applicability of this idea by using two differently doped graphene layers in otherwise identical FETs with Al$_2$O$_3$ as a gate oxide mounted on a flexible substrate. Our results clearly show that by increasing the distance of the Fermi-level to the defect band, the hysteresis is significantly reduced. Furthermore, since long-term reliability is also very sensitive to trapped charges, a corresponding improvement in reliability is both expected theoretically and demonstrated experimentally. Our study paves the way for the construction of more stable and reliable 2D FETs in which the channel material is carefully chosen and tuned to maximize the energetic distance between charge carriers in the channel and the defect bands in the insulator employed.
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Submitted 26 April, 2021; v1 submitted 16 April, 2021;
originally announced April 2021.
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Graphene in 2D/3D Heterostructure Diodes for High Performance Electronics and Optoelectronics
Authors:
Zhenxing Wang,
Andreas Hemmetter,
Burkay Uzlu,
Mohamed Saeed,
Ahmed Hamed,
Satender Kataria,
Renato Negra,
Daniel Neumaier,
Max C. Lemme
Abstract:
Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insulator-graphene (MIG) diodes over conventional metal-insulator-metal diodes are discussed with respect to relevant figures-of-merit. The MIG concept is…
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Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insulator-graphene (MIG) diodes over conventional metal-insulator-metal diodes are discussed with respect to relevant figures-of-merit. The MIG concept is extended to 1D diodes. Several experimentally implemented radio frequency circuit applications with MIG diodes as active elements are presented. Furthermore, graphene-silicon Schottky diodes as well as MIG diodes are reviewed in terms of their potential for photodetection. Here, graphene-based diodes have the potential to outperform conventional photodetectors in several key figures-of-merit, such as overall responsivity or dark current levels. Obviously, advantages in some areas may come at the cost of disadvantages in others, so that 2D/3D diodes need to be tailored in application-specific ways.
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Submitted 27 March, 2021;
originally announced March 2021.
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Evidence for local spots of viscous electron flow in graphene at moderate mobility
Authors:
Sayanti Samaddar,
Jeff Strasdas,
Kevin Janßen,
Sven Just,
Tjorven Johnsen,
Zhenxing Wang,
Burkay Uzlu,
Sha Li,
Daniel Neumaier,
Marcus Liebmann,
Markus Morgenstern
Abstract:
Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate…
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Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experiments and mapping of the Poiseuille profile. Here, we probe the current-induced surface potential maps of graphene field effect transistors with moderate mobility using scanning probe microscopy at room temperature. We discover micron-sized large areas appearing close to charge neutrality that show current induced electric fields opposing the externally applied field. By estimating the local scattering lengths from the gate dependence of local in-plane electric fields, we find that electron-electron scattering dominates in these areas as expected for viscous flow. Moreover, we suppress the inverted fields by artificially decreasing the electron-disorder scattering length via mild ion bombardment. These results imply that viscous electron flow is omnipresent in graphene devices, even at moderate mobility.
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Submitted 16 January, 2022; v1 submitted 21 March, 2021;
originally announced March 2021.
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Graphene-Quantum Dots Hybrid Photodetectors with Low Dark-Current Readout
Authors:
D. De Fazio,
B. Uzlu,
I. Torre,
C. Monasterio,
S. Gupta,
T. Khodkov,
Y. Bi,
Z. Wang,
M. Otto,
M. C. Lemme,
S. Goossens,
D. Neumaier,
F. H. L. Koppens
Abstract:
Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout…
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Graphene-based photodetectors have shown responsivities up to 10$^8$A/W and photoconductive gains up to 10$^{8}$ electrons per photon. These photodetectors rely on a highly absorbing layer in close proximity of graphene, which induces a shift of the graphene chemical potential upon absorption, hence modifying its channel resistance. However, due to the semi-metallic nature of graphene, the readout requires dark currents of hundreds of $μ$A up to mA, leading to high power consumption needed for the device operation. Here we propose a novel approach for highly responsive graphene-based photodetectors with orders of magnitude lower dark current levels. A shift of the graphene chemical potential caused by light absorption in a layer of colloidal quantum dots, induces a variation of the current flowing across a metal-insulator-graphene diode structure. Owing to the low density of states of graphene near the neutrality point, the light-induced shift in chemical potential can be relatively large, dramatically changing the amount of current flowing across the insulating barrier, and giving rise to a novel type of gain mechanism. This readout requires dark currents of hundreds of nA up to few $μ$A, orders of magnitude lower than other graphene-based photodetectors, while keeping responsivities of $\sim$70A/W in the infrared, almost two orders of magnitude higher compared to established germanium on silicon and indium gallium arsenide infrared photodetectors. This makes the device appealing for applications where high responsivity and low power consumption are required.
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Submitted 21 May, 2020;
originally announced May 2020.
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Flexible One-Dimensional Metal-Insulator-Graphene Diode
Authors:
Zhenxing Wang,
Burkay Uzlu,
Mehrdad Shaygan,
Martin Otto,
Mário Ribeiro,
Enrique González Marín,
Giuseppe Iannaccone,
Gianluca Fiori,
Mohamed Saeed Elsayed,
Renato Negra,
Daniel Neumaier
Abstract:
In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry deliv…
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In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier material. The diodes demonstrate ultra-high current density since the transport in the graphene and through the barrier is in plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.
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Submitted 18 March, 2020;
originally announced March 2020.
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Gate-tunable graphene-based Hall sensors on flexible substrates with increased sensitivity
Authors:
Burkay Uzlu,
Zhenxing Wang,
Sebastian Lukas,
Martin Otto,
Max C. Lemme,
Daniel Neumaier
Abstract:
We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f no…
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We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity can be doubled by utilizing both n- and p-type conductance. 2) A static magnetic field can be read out at frequencies in the kHz range, where the 1/f noise is lower compared to the static case. 3) The off-set voltage in the Hall signal can be reduced. This significantly increases the signal-to-noise ratio compared to Hall sensors without a gate electrode. A minimal detectable magnetic field Bmin down to 290 nT/sqrt(Hz) and sensitivity up to 0.55 V/VT was found for Hall sensors fabricated on flexible foil. This clearly outperforms state-of-the-art flexible Hall sensors and is comparable to the values obtained by the best rigid III/V semiconductor Hall sensors.
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Submitted 16 September, 2019;
originally announced September 2019.
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Graphene Based Adaptive Thermal Camouflage
Authors:
Omer Salihoglu,
Hasan Burkay Uzlu,
Ozan Yakar,
Shahnaz Aas,
Osman Balci,
Nurbek Kakevov,
Sinan Balci,
Selim Olcum,
Sefik Süzer,
Coskun Kocabas
Abstract:
In nature adaptive coloration has been effectively utilized for concealment and signaling. Various biological mechanisms have evolved that can tune the reflectivity for visible and ultraviolet light. These examples inspire many artificial systems for mimicking adaptive coloration to match the visual appearance to their surroundings. Thermal camouflage, however, has been an outstanding challenge wh…
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In nature adaptive coloration has been effectively utilized for concealment and signaling. Various biological mechanisms have evolved that can tune the reflectivity for visible and ultraviolet light. These examples inspire many artificial systems for mimicking adaptive coloration to match the visual appearance to their surroundings. Thermal camouflage, however, has been an outstanding challenge which requires an ability to control of the emitted thermal radiation from the surface. Here we report a new class of active thermal surfaces capable of efficient real-time electrical-control of thermal emission over the full infrared (IR) spectrum without changing the temperature of the surface. Our approach relies on electro-modulation of IR absorptivity and emissivity of multilayer graphene via reversible intercalation of nonvolatile ionic liquids. The demonstrated devices are light (30 g/m2), thin (<50 um) and ultra-flexible which can conformably coat their environment. In addition, combining active thermal surfaces with a feedback mechanism, we demonstrate realization of an adaptive thermal camouflage system which can reconfigure its thermal appearance and blend itself with the thermal background in a few seconds. Furthermore, we show that these devices can disguise hot objects as cold and cold ones as hot in a thermal imaging system. We anticipate that, the electrical control of thermal radiation will impact on a variety of new technologies ranging from adaptive IR optics to heat management for outer space applications.
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Submitted 29 April, 2018;
originally announced April 2018.
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Graphene Enabled Optoelectronics on Paper
Authors:
Emre O. Polat,
Hasan Burkay Uzlu,
Osman Balci,
Nurbek Kakenov,
Evgeniya Kovalska,
Coskun Kocabas
Abstract:
The realization of optoelectronic devices on paper has been an outstanding challenge due to the large surface roughness and incompatible nature of paper with optical materials. Here, we demonstrate a new class of optoelectronic devices on a piece of printing paper using graphene as an electrically reconfigurable optical medium. Our approach relies on electro-modulation of optical properties of mul…
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The realization of optoelectronic devices on paper has been an outstanding challenge due to the large surface roughness and incompatible nature of paper with optical materials. Here, we demonstrate a new class of optoelectronic devices on a piece of printing paper using graphene as an electrically reconfigurable optical medium. Our approach relies on electro-modulation of optical properties of multilayer graphene on paper via blocking the interband electronic transitions. The paper based devices yield high optical contrast in the visible spectrum with fast response speed. Pattering graphene into multiple pixels, folding paper into 3-dimensional shapes or printing coloured ink on paper substrates enable us to demonstrate novel optoelectronic devices which cannot be realized with wafer-based techniques.
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Submitted 14 January, 2018;
originally announced January 2018.
