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Formation of a Te-Ag Honeycomb Alloy: A New Type of Two-Dimensional Material
Authors:
J. Shah,
H. M. Sohail,
R. I. G. Uhrberg,
W. Wang
Abstract:
Inspired by the unique properties of graphene, the focus in the literature is now on investigations of various two-dimensional (2D) materials with the aim to explore their properties for future applications. The group IV analogues of graphene, i.e., silicene, germanene and stanene have been intensively studied in recent years. However, their semi-metallic band structures hamper their use in electr…
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Inspired by the unique properties of graphene, the focus in the literature is now on investigations of various two-dimensional (2D) materials with the aim to explore their properties for future applications. The group IV analogues of graphene, i.e., silicene, germanene and stanene have been intensively studied in recent years. However, their semi-metallic band structures hamper their use in electronic applications. Hence, the synthesis of 2D materials with band gaps of various sizes has attracted a large interest. Here, we report a successful preparation of a 2D Te-Ag binary alloy with a honeycomb structure. Angle-resolved photoelectron spectroscopy (ARPES) in combination with first-principles calculations using density functional theory (DFT) confirmed the formation of this binary alloy. The semiconducting property is verified by the ARPES data and a direct gap of ~0.7 eV is predicted by the DFT calculations.
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Submitted 19 September, 2019;
originally announced September 2019.
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Experimental evidence of monolayer arsenene: An exotic two-dimensional semiconducting material
Authors:
J. Shah,
W. Wang,
H. M. Sohail,
R. I. G. Uhrberg
Abstract:
Group V element analogues of graphene have attracted a lot attention recently due to their semiconducting band structures, which make them promising for next generation electronic and optoelectronic devices based on two-dimensional materials. Theoretical investigations predict high electron mobility, large band gaps, band gap tuning by strain, formation of topological phases, quantum spin Hall eff…
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Group V element analogues of graphene have attracted a lot attention recently due to their semiconducting band structures, which make them promising for next generation electronic and optoelectronic devices based on two-dimensional materials. Theoretical investigations predict high electron mobility, large band gaps, band gap tuning by strain, formation of topological phases, quantum spin Hall effect at room temperature, and superconductivity amongst others. Here, we report a successful formation of freestanding like monolayer arsenene on Ag(111). This was concluded from our experimental atomic and electronic structure data by comparing to results of our theoretical calculations. Arsenene forms a buckled honeycomb layer on Ag(111) with a lattice constant of 3.6 Å showing an indirect band gap of about 1.4 eV as deduced from the position of the Fermi level pinning.
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Submitted 14 December, 2018;
originally announced December 2018.
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Coexistence of strongly buckled germanene phases on Al(111)
Authors:
W. Wang,
R. I. G. Uhrberg
Abstract:
We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a germanium layer can be formed at a relatively high substrate temperature showing either (3$\times$3) or ($\sqrt{7}$$\times$$\sqrt{7}$)R$\pm$19.1° reconstructio…
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We report a study of structural and electronic properties of a germanium layer on Al(111) using scanning tunneling microscopy (STM), low energy electron diffraction and core-level photoelectron spectroscopy. Experimental results show that a germanium layer can be formed at a relatively high substrate temperature showing either (3$\times$3) or ($\sqrt{7}$$\times$$\sqrt{7}$)R$\pm$19.1° reconstructions. First-principles calculations based on density functional theory suggest an atomic model consisting of a strongly buckled (2$\times$2) germanene layer, which is stable in two different orientations on Al(111). Simulated STM of both orientations fit nicely with experimental STM images and the Ge 3d core-level data decomposed into four components is consistent with the suggested model.
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Submitted 7 December, 2017; v1 submitted 22 November, 2017;
originally announced November 2017.
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Investigation of the atomic and electronic structures of highly ordered two-dimensional germanium on Au(111)
Authors:
W. Wang,
R. I. G. Uhrberg
Abstract:
Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), and photoelectron spectroscopy have been used to study an ordered structure formed by Ge atoms deposited onto the Au(111) surface. Based on a careful analysis of STM images and LEED patterns, we propose a new unit cell for the atomic structure of the Ge layer. Core level data indicate that some Ge atoms diffuse into the A…
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Low energy electron diffraction (LEED), scanning tunneling microscopy (STM), and photoelectron spectroscopy have been used to study an ordered structure formed by Ge atoms deposited onto the Au(111) surface. Based on a careful analysis of STM images and LEED patterns, we propose a new unit cell for the atomic structure of the Ge layer. Core level data indicate that some Ge atoms diffuse into the Au(111) crystal during annealing after deposition at room temperature. This is further corroborated by angle resolved photoelectron spectroscopy measured for different amounts of Ge remaining after sputtering and annealing. The results of the ARPES study clearly exclude the interpretation, in the literature, of a parabolic band as part of a Dirac cone of germanene.
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Submitted 28 December, 2017; v1 submitted 26 September, 2017;
originally announced September 2017.
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Band structure of hydrogenated silicene on Ag(111): Evidence for silicane
Authors:
W. Wang,
W. Olovsson,
R. I. G. Uhrberg
Abstract:
In the case of graphene, hydrogenation removes the conductivity due to the bands forming the Dirac cone by opening up a band gap. This type of chemical functionalization is of utmost importance for electronic applications. As predicted by theoretical studies, a similar change of the band structure is expected for silicene, the closest analogue to graphene. We here report a study of the atomic and…
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In the case of graphene, hydrogenation removes the conductivity due to the bands forming the Dirac cone by opening up a band gap. This type of chemical functionalization is of utmost importance for electronic applications. As predicted by theoretical studies, a similar change of the band structure is expected for silicene, the closest analogue to graphene. We here report a study of the atomic and electronic structures of hydrogenated silicene, so called silicane. The ($\small 2\sqrt{3} \times 2\sqrt{3}$) phase of silicene on Ag(111) was used in this study since it can be formed homogeneously across the entire surface of the Ag substrate. Low energy electron diffraction and scanning tunneling microscopy data clearly show that hydrogenation changes the structure of silicene on Ag(111) resulting in a (1 $\times$ 1) periodicity with respect to the silicene lattice. The hydrogenated silicene also exhibits a quasi-regular ($\small 2\sqrt{3} \times 2\sqrt{3}$)-like arrangement of vacancies. Angle resolved photoelectron spectroscopy revealed two dispersive bands which can be unambiguously assigned to silicane. The common top of these bands is located at $\small \backsim$ 0.9 eV below the Fermi level. We find that the experimental bands are closely reproduced by the theoretical band structure of free standing silicane with H adsorbed on the upper hexagonal sub-lattice of silicene.
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Submitted 6 December, 2017; v1 submitted 19 November, 2015;
originally announced November 2015.
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Experimental and theoretical determination of σ-bands on ("2$\sqrt{3}$x2$\sqrt{3}$") silicene grown on Ag(111)
Authors:
W. Wang,
W. Olovsson,
R. I. G. Uhrberg
Abstract:
Silicene, the two-dimensional (2D) allotrope of silicon has very recently attracted a lot of attention. It has a structure that is similar to graphene and it is theoretically predicted to show the same kind of electronic properties which has put graphene into the focus of large research and development projects world-wide. In particular, a 2D structure made from Si is of high interest because of t…
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Silicene, the two-dimensional (2D) allotrope of silicon has very recently attracted a lot of attention. It has a structure that is similar to graphene and it is theoretically predicted to show the same kind of electronic properties which has put graphene into the focus of large research and development projects world-wide. In particular, a 2D structure made from Si is of high interest because of the application potential in Si-based electronic devices. However, so far there is not much known about the silicene band structure from experimental studies. A comprehensive study is here presented of the atomic and electronic structure of the silicene phase on Ag(111) denoted as (2$\sqrt{3}$x2$\sqrt{3}$)R30° in the literature. Low energy electron diffraction (LEED) shows an unconventional rotated ("2$\sqrt{3}$x2$\sqrt{3}$") pattern with a complicated set of split diffraction spots. Scanning tunneling microscopy (STM) results reveal a Ag(111) surface that is homogeneously covered by the ("2$\sqrt{3}$x2$\sqrt{3}$") silicene which exhibits an additional quasi-periodic long range ordered superstructure. The complex structure, revealed by STM, has been investigated in detail and we present a consistent picture of the silicene structure based on both STM and LEED. The homogeneous coverage by the ("2$\sqrt{3}$x2$\sqrt{3}$") silicene facilitated an angle-resolved photoelectron spectroscopy study which reveals a silicene band structure of unprecedented detail. Here, we report four silicene bands which are compared to calculated dispersions based on a relaxed (2$\sqrt{3}$x2$\sqrt{3}$) model. We find good qualitative agreement between the experimentally observed bands and calculated silicene bands of σ character.
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Submitted 6 December, 2017; v1 submitted 16 October, 2015;
originally announced October 2015.
