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Off-resonant photoluminescence spectroscopy of high-optical quality single photon emitters in GaN
Authors:
Nilesh Dalla,
Paweł Kulboka,
Michał Kobecki,
Jan Misiak,
Paweł Prystawko,
Henryk Turski,
Piotr Kossacki,
Tomasz Jakubczyk
Abstract:
In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of different emitters by photoluminescence excitation technique at 10\,K. We report large spectral jumps (shifts up to 22\,meV) in the emitters' zero-phonon line (ZPL). The likelihood of such jumps is increased by the change in ex…
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In this work, we analyze the relevance of excitation parameters on the emission from single-photon emitting defect centers in GaN. We investigate the absorption spectrum of different emitters by photoluminescence excitation technique at 10\,K. We report large spectral jumps (shifts up to 22\,meV) in the emitters' zero-phonon line (ZPL). The likelihood of such jumps is increased by the change in excitation energy. The shifts indicate a large built-in dipole moment of the defects and suggest a possibility to electrically tune their ZPL in a wide range. From the photoluminescence excitation studies, we observe that for majority of the emitters the absorption peaks exist between 2 and 2.55\,eV. The absorption peaks vary from emitter to emitter, and no universal absorption pattern is apparent. Finally, for selected emitters we observe significantly reduced spectral diffusion and instrument-limited linewidth of $138\,μeV$ (0.04\,nm).These findings show a new perspective for atomic defect GaN emitters as sources of coherent photons, shine new light on their energy level structure and show the possibility of tuning the ZPL, paving the way to fully harness their potential for applications in quantum technologies.
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Submitted 28 January, 2025; v1 submitted 9 January, 2025;
originally announced January 2025.
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Leveraging both faces of polar semiconductor wafers for functional devices
Authors:
Len van Deurzen,
Eungkyun Kim,
Naomi Pieczulewski,
Zexuan Zhang,
Anna Feduniewicz-Zmuda,
Mikolaj Chlipala,
Marcin Siekacz,
David Muller,
Huili Grace Xing,
Debdeep Jena,
Henryk Turski
Abstract:
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium)…
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Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we introduce dualtronics, showing that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for leveraging both faces of polar semiconductors in a single structure, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family.
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Submitted 25 September, 2024; v1 submitted 4 April, 2024;
originally announced April 2024.
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Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells
Authors:
Paweł Wolny,
Henryk Turski,
Grzegorz Muziol,
Marta Sawicka,
Julita Smalc-Koziorowska,
Joanna Moneta,
Anna Feduniewicz-Żmuda,
Szymon Grzanka,
Czesław Skierbiszewski
Abstract:
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effe…
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InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effect as it allows to reduce the formation of defects, responsible for nonradiative Shockley-Read-Hall recombination, at the bottom interface of the QW. Staggered QWs comprised an InGaN layer of an intermediate In content between the barrier and the QW. We show that insertion of such a layer results in a significant increase of the luminescence intensity, even if the calculated wavefunction overlap drops. We study the dependence of the thickness of such an intermediate In content layer on photoluminescence (PL) intensity behavior. Staggered QWs exhibit increased cathodoluminescence (CL) homogeneity that is a fingerprint of lower density of defects, in contrast to standard QWs for which high density of dark spots are observed in QW emission mapping. Transmission electron microscopy of standard QWs revealed formation of basal-plane stacking faults (BSFs) and voids that could have resulted from vacancy aggregation. Stepwise increase of the In content in staggered QWs prevents formation of point defects and results in an increased luminescence efficiency. The In composition difference between the barrier and the well is therefore a key parameter to control the formation of point defects in the high-In content QWs, influencing the luminescence efficiency.
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Submitted 21 June, 2022;
originally announced June 2022.
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Electrically pumped blue laser diodes with nanoporous bottom cladding
Authors:
Marta Sawicka,
Grzegorz Muziol,
Natalia Fiuczek,
Mateusz Hajdel,
Marcin Siekacz,
Anna Feduniewicz-Żmuda,
Krzesimir Nowakowski-Szkudlarek,
Paweł Wolny,
Mikołaj Żak,
Henryk Turski,
Czesław Skierbiszewski
Abstract:
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cla…
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We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cladding are compared to the refer-ence structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The de-sign of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.
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Submitted 11 January, 2022;
originally announced January 2022.
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Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs
Authors:
Len van Deurzen,
Mikel Gómez Ruiz,
Kevin Lee,
Henryk Turski,
Shyam Bharadwaj,
Ryan Page,
Vladimir Protasenko,
Huili,
Xing,
Jonas Lähnemann,
Debdeep Jena
Abstract:
This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities a…
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This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N$_{2}$ formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots due to leakage current and nonradiative recombination.
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Submitted 20 June, 2021;
originally announced June 2021.
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Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
Authors:
Shyam Bharadwaj,
Jeffrey Miller,
Kevin Lee,
Joshua Lederman,
Marcin Siekacz,
Huili Xing,
Debdeep Jena,
Czesław Skierbiszewski,
Henryk Turski
Abstract:
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga…
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Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga$_{0.83}$N/GaN TJs and UID GaN spacers to separate the optical mode from the heavily doped absorbing p-cladding regions. In such laser structures, polarization offsets at the electron blocking layer, spacer, and quantum barrier interfaces play discernable roles in carrier transport. By comparing a top-TJ structure to a bottom-TJ structure, and correlating features in the electroluminescence, capacitance-voltage, and current-voltage characteristics to unique signatures of the N- and Ga-polar polarization heterointerfaces in energy band diagram simulations, we identify that improved hole injection at low currents, and improved electron blocking at high currents, leads to higher injection efficiency and higher output power for the bottom-TJ device throughout 5 orders of current density (0.015 - 1000 A/cm$^2$). Moreover, even with the addition of a UID GaN spacer, differential resistances are state-of-the-art, below 7x10-4 $Ω$cm$^2$. These results highlight the virtues of the bottom-TJ geometry for use in high-efficiency laser diodes.
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Submitted 8 November, 2019;
originally announced November 2019.
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Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells
Authors:
Michał Jarema,
Marta Gładysiewicz,
Łukasz Janicki,
Ewelina Zdanowicz,
Henryk Turski,
Grzegorz Muzioł,
Czesław Skierbiszewski,
Robert Kudrawiec
Abstract:
In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous broadening observed in photoluminescence (PL) and electromodulated reflectance (ER) spectra of InGaN QWs dedicated to green/blue lasers is explained. Spectra of both pol…
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In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous broadening observed in photoluminescence (PL) and electromodulated reflectance (ER) spectra of InGaN QWs dedicated to green/blue lasers is explained. Spectra of both polar and non-polar QWs are simulated within the random QW model distinguishing contributions of individual transitions taking into account QW inhomogeneities (QW width and indium content fluctuations). On this basis we interpret the ER and PL spectra measured for a polar multiple QW InGaN/GaN structure. The built-in electric field shifts the emission wavelength to red, and enhances the broadening of optical transitions. It is clearly shown that for polar QWs the Stokes shift can be easily overestimated if PL spectra are compared with ER spectra since the intensity of the fundamental transition observed in ER spectra significantly decreases with the increase in QW width. In this way ER signal related to excited states start to dominate. This effect is strongly enhanced by QW inhomogeneities.
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Submitted 7 February, 2020; v1 submitted 22 July, 2019;
originally announced July 2019.
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Highly efficient optical transition between excited states in wide InGaN quantum wells
Authors:
Grzegorz Muziol,
Henryk Turski,
Marcin Siekacz,
Krzesimir Szkudlarek,
Lukasz Janicki,
Sebastian Zolud,
Robert Kudrawiec,
Tadeusz Suski,
Czeslaw Skierbiszewski
Abstract:
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission wavelengths due to the quantum confined Stark effect (QCSE). In this paper we present a design of the active region based on wide InGaN quantum wells (QWs) which do not…
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There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission wavelengths due to the quantum confined Stark effect (QCSE). In this paper we present a design of the active region based on wide InGaN quantum wells (QWs) which do not suffer from QCSE and profit from an enhancement in the internal quantum efficiency (IQE). The design exploits highly efficient optical transitions between excited states. It is shown that, counterintuitively, the devices with higher InGaN composition exhibit a higher enhancement in IQE. Experimental evidence is provided showing a gradual change in the nature of the optical transition with increasing thickness of the QW. Moreover, optical gain in long wavelength LDs incorporating standard and wide QWs is investigated to show the utilization of our concept.
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Submitted 17 October, 2018;
originally announced October 2018.
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Polarization control in Nitride Quantum Well Light Emitters Enabled by Bottom Tunnel-junctions
Authors:
Henryk Turski,
Shyam Bharadwaj,
Huili,
Xing,
Debdeep Jena
Abstract:
The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quantum well heterostructures point in a direction opposite to what is desired for efficient flow of electrons and holes. This state of affairs has persisted because of the desire to have p-type hole injectors on top of the…
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The frozen internal polarization-induced electric fields due to broken inversion symmetry in all conventional blue and green nitride semiconductor light emitting semiconductor quantum well heterostructures point in a direction opposite to what is desired for efficient flow of electrons and holes. This state of affairs has persisted because of the desire to have p-type hole injectors on top of the quantum well active region. Because of the internal polarization fields in nitride heterostructures, there exist four permutations of doping and polarization for the realization of such light emitters. Which permutation is the most desirable for efficient light emission? In this work, we answer this question by demonstrating a fundamentally new approach towards efficient light emission with bottom-tunnel junctions. The bottom-tunnel junction design aligns the polarization fields in a desired direction in the quantum well, while simultaneously eliminating the need for p-type contacts, and allowing efficient current spreading. By preventing electron overshoot past quantum wells, it disables carrier recombination in undesired regions of the quantized heterostructures, and opens up the possibility for new geometries of integrating and stacking multiple light emitters. Due to the inherent advantages, the bottom-tunnel junction light emitting diode enables a 200-300% increase in the light emission efficiency over alternate heterostructure designs.
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Submitted 3 October, 2018;
originally announced October 2018.
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Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature
Authors:
C. Chèze,
F. Feix,
J. Lähnemann,
T. Flissikowski,
O. Brandt,
M. Kryśko,
P. Wolny,
H. Turski,
C. Skierbiszewski,
O. Brandt
Abstract:
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperatur…
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N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially homogeneous green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.
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Submitted 23 October, 2017;
originally announced October 2017.
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Miscut dependent surface evolution in the process of N-polar GaN$(000\bar 1)$ growth under N-rich condition
Authors:
Filip Krzyzewski,
Magdalena A. Zaluska-Kotur,
Henryk Turski,
Marta Sawicka,
Czeslaw Skierbiszewski
Abstract:
The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally observed surface morphologies of (000-1) GaN layers grown by plasma-assisted molecular beam epitaxy. The proposed kMC two-component model of GaN(000-1) surface w…
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The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally observed surface morphologies of (000-1) GaN layers grown by plasma-assisted molecular beam epitaxy. The proposed kMC two-component model of GaN(000-1) surface where both types of atoms: nitrogen and gallium attach the surface and diffuse independently, explains that at relatively high rates of the step flow (miscut angle <2deg) the low diffusion of gallium adatoms causes surface instabilities and leads to experimentally observed roughening while for low rates of the step flow (miscut 4deg), smooth surface can be obtained. In the presence of almost immobile nitrogen atoms under N-rich conditions, the growth is realized by the process of two-dimensional island nucleation and coalescence. Additionally, we show that higher crystal miscut, lower crystal growth rate or higher temperature results in similar effect of the smoothening of the surface. We show that the surface also smoothens for the growth conditions with very high N-excess. The presence of large number of nitrogen atoms changes locally mobility of gallium atoms thus providing easier coalescence of separated island.
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Submitted 3 September, 2015;
originally announced September 2015.
