Electronic structure and exchange interactions in altermagnetic MnGeP$_2$ in the quasiparticle-self-consistent $GW$ approach
Authors:
Ilteris K. Turan,
Walter R L. Lambrecht,
Jerome Jackson
Abstract:
The QS$GW$ method is used to study the electronic band structure, optical dielectric function, and exchange interactions in chalcopyrite, $I\bar{4}2d$, structure MnGeP$_2$. The material is found to be an antiferromagnetic semiconductor with lowest direct gap of 2.44 eV at the $Γ$ point and an indirect gap of 2.16 eV. The spin splittings along a low symmetry line like $PN$ are sizable, while at {\b…
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The QS$GW$ method is used to study the electronic band structure, optical dielectric function, and exchange interactions in chalcopyrite, $I\bar{4}2d$, structure MnGeP$_2$. The material is found to be an antiferromagnetic semiconductor with lowest direct gap of 2.44 eV at the $Γ$ point and an indirect gap of 2.16 eV. The spin splittings along a low symmetry line like $PN$ are sizable, while at {\bf k}-points on the diagonal mirror planes or on the twofold symmetry axes the spin splitting is zero. The exchange interactions are calculated using a linear response approach. The antiferromagnetic exchange-interaction between nearest neighbors in the primitive unit cell is dominating and found to be slightly decreasing upon carrier doping. The transverse spin susceptibilities, which provide interatomic site exchange interactions after averaging over the muffin-tin spheres, are calculated from the $GW$ band structure and wave functions. From these exchange interactions, the spin wave spectra are obtained along the high symmetry lines and the Néel temperature is calculated using the mean-field, and Tyablikov estimations. The dielectric function and the optical absorption spectra are calculated including excitonic effects using the Bethe Salpeter equation. The exchange interactions around Mn$_{\rm Ge}$ defect sites is also studied. While we find it can generate ferromagnetic interactions with neighboring spins, we did not find evidence of producing an overall ferromagnetic phase. If Mn antisites are introduced by exchanging Mn with a nearby Ge, the interactions stay largely antiferromagnetic. Adding Mn antisites leads to a metallic band structure.
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Submitted 5 May, 2025;
originally announced May 2025.
Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire
Authors:
Chenxi Hu,
Vijay Gopal Thirupakuzi Vangipuram,
Christopher Chae,
Ilteris K. Turan,
Nichole Hoven,
Walter R. L. Lambrecht,
Jinwoo Hwang,
Yumi Ijiri,
Hongping Zhao,
Kathleen Kash
Abstract:
MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate magnesium evaporation, the films were grown at pyrometer temperature 745 °C with a wafer rotation speed of 1000 rpm. Growth rates were determined by fitting energ…
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MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy was used to estimate the cation composition ratios. To mitigate magnesium evaporation, the films were grown at pyrometer temperature 745 °C with a wafer rotation speed of 1000 rpm. Growth rates were determined by fitting energy-dispersive X-ray spectroscopy spectra to film thicknesses using NIST DTSA-II software. The thickness estimates determined by this method were consistent with scanning transmission electron microscopy measurements done for selected samples. Scanning electron microscopy images revealed faceted surfaces indicative of a tendency toward three-dimensional growth. X-ray diffraction spectra confirmed that the films were highly crystalline and exhibited preferential orientation in alignment with the substrate. Atomic force microscopy measurements show that film thicknesses are consistent across samples grown on both GaN templates and sapphire substrates, with typical roughnesses around 10 nm. Transmittance spectra of films grown on double-side-polished sapphire substrates yielded band gaps of 4.28 +- 0.06 eV for samples exhibiting close-to-ideal stoichiometry. Comparison of the measured spectra with ab initio calculations are in good agreement both near the band gap and at higher energies where excitation is into higher-lying bands. These findings provide insight into the growth and characterization of MgGeN2, contributing to the development of this material for potential applications in optoelectronics and power electronics.
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Submitted 25 February, 2025;
originally announced February 2025.
