Measurements of time resolution of the RD50-MPW2 DMAPS prototype using TCT and $^{90}\mathrm{Sr}$
Authors:
J. Debevc,
M. Franks,
B. Hiti,
U. Kraemer,
G. Kramberger,
I. Mandić,
R. Marco-Hernández,
D. J. L. Nobels,
S. Powell,
J. Sonneveld,
H. Steininger,
C. Tsolanta,
E. Vilella,
C. Zhang
Abstract:
Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a $^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot 10^{14}\,\mathrm{n}_\mathrm{eq}/\mathrm{cm}^2$ was used to study the effect of radiation damage…
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Results in this paper present an in-depth study of time resolution for active pixels of the RD50-MPW2 prototype CMOS particle detector. Measurement techniques employed include Backside- and Edge-TCT configurations, in addition to electrons from a $^{90}\mathrm{Sr}$ source. A sample irradiated to $5\cdot 10^{14}\,\mathrm{n}_\mathrm{eq}/\mathrm{cm}^2$ was used to study the effect of radiation damage. Timing performance was evaluated for the entire pixel matrix and with positional sensitivity within individual pixels as a function of the deposited charge. Time resolution obtained with TCT is seen to be uniform throughout the pixel's central region with approx. $220\,\mathrm{ps}$ at $12\,\mathrm{ke}^-$ of deposited charge, degrading at the edges and lower values of deposited charge. $^{90}\mathrm{Sr}$ measurements show a slightly worse time resolution as a result of delayed events coming from the peripheral areas of the pixel.
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Submitted 25 January, 2024; v1 submitted 4 December, 2023;
originally announced December 2023.
