Optimization of the coherence properties of diamond samples with an intermediate concentration of NV centers
Authors:
O. R. Rubinas,
V. V. Soshenko,
S. V. Bolshedvorskii,
A. I. Zeleneev,
A. S. Galkin,
S. A. Tarelkin,
S. Y. Troschiev,
V. V. Vorobyov,
V. N. Sorokin,
A. A. Sukhanov,
V. G. Vins,
A. N. Smolyaninov,
A. V. Akimov
Abstract:
The sensitivity of the nitrogen-vacancy (NV) color centers in diamond-based magnetometers strongly depends on the number of NV centers involved in the measurement. Unfortunately, an increasing concentration of NV centers leads to decreases of their dephasing and coherence time if the nitrogen content exceeds a certain threshold level (approximately ${10^{17}}{\rm{ c}}{\rm{m}^{ - 3}}$). Here, we de…
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The sensitivity of the nitrogen-vacancy (NV) color centers in diamond-based magnetometers strongly depends on the number of NV centers involved in the measurement. Unfortunately, an increasing concentration of NV centers leads to decreases of their dephasing and coherence time if the nitrogen content exceeds a certain threshold level (approximately ${10^{17}}{\rm{ c}}{\rm{m}^{ - 3}}$). Here, we demonstrate that this increased dephasing can be efficiently compensated by postprocessing procedures in the vicinity of the threshold concertation, thus extending possible useful concentrations on NV centers with the maximum possible decoherence time in diamonds with a natural carbon content.
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Submitted 22 April, 2020;
originally announced April 2020.
Resolving isotope splitting of boron-related intracenter transitions in diamond by infrared absorption spectroscopy
Authors:
Dmitrii Prikhodko,
Sergey Pavlov,
Sergey Tarelkin,
Vitaly Bormashov,
Mikhail Kuznetsov,
Sergey Terentiev,
Sergey Nosukhin,
Sergey Troschiev,
Heinz-Wilhelm Hübers,
Vladimir Blank
Abstract:
Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both…
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Isotopic enrichment offers cutting-edge properties of materials opening exciting research and development opportunities. In semiconductors, reached progress of ultimate control in growth and doping techniques follows nowadays the high level isotopic purification. This requires deep understanding of isotopic disorder effects and techniques of their effective determination. Isotopic content of both crystal lattice and impurity centers cause the effects, which can be examined by different optical techniques. While disorder in the host lattice can be straight forward evaluated by inelastic light scattering or by SIMS measurements, determination of isotopic contributions of many orders less presented impurities remains challenging and usually observed in high-resolution photoluminescence or optical absorption spectra. Boron-doped diamonds exhibit complex infrared absorption spectra while boron-related luminescence remains unobserved. Boron, as a most light element acting as a hydrogen-like dopant in elemental semiconductors, has a largest relative difference in its isotope masses, and by this, cause the largest isotopic disorder in semiconductors, including diamond, an elemental semiconductor with the lightest atomic mass of a host lattice. This enables an access to the isotopic constitution of boron in diamond by infrared absorption spectroscopy. By comparison of low-temperature absorption spectra of a natural (20% of 10B and 80% of 11B isotopes) and 11B enriched (up to 99%) doped diamonds we differentiate the intracenter transitions related to 10B and to 11B isotopes. We have found that the isotopic spectral lines of the same boron intracenter transition are separated with the energy of about 0.7 meV. This is the largest impurity isotopic shift ever observed in semiconductors doped by hydrogen-like impurity centers.
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Submitted 26 November, 2019;
originally announced November 2019.
