Showing 1–12 of 12 results for author: Toyosaki, H

Bulk and Surface Magnetization of Co atoms in Rutile Ti_[1-x]Co_xO_[2-delta] Thin Films Revealed by X-Ray Magnetic Circular Dichroism

Authors: V. R. Singh, Y. Sakamoto, T. Kataoka, M. Kobayashi, Y. Yamazaki, A. Fujimori, F. -H. Chang, D. -J. Huang, H. -J. Lin, C. T. Chen, H. Toyosaki, T. Fukumura, M. Kawasaki

Abstract: We have studied magnetism in Ti_[1-x]Co_xO_[2-δ] thin films with various x and δby soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L_[2,3] absorption edges. The estimated ferromagnetic moment by XMCD was 0.15-0.24 μβ/Co in the surface, while in the bulk it was 0.82-2.25 μβ/Co, which is in the same range as the saturation magnetization of 1.0-1.5 μβ/Co. Theseresults suggest tha… ▽ More We have studied magnetism in Ti_[1-x]Co_xO_[2-δ] thin films with various x and δby soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L_[2,3] absorption edges. The estimated ferromagnetic moment by XMCD was 0.15-0.24 μβ/Co in the surface, while in the bulk it was 0.82-2.25 μβ/Co, which is in the same range as the saturation magnetization of 1.0-1.5 μβ/Co. Theseresults suggest that the intrinsic origin of the erromagnetism. The smaller moment of Co atom at surface is an indication of a magnetically dead layer of a few nm thick at the surface of the thin films. △ Less

Submitted 1 April, 2011; v1 submitted 31 March, 2011; originally announced March 2011.

Comments: This Paper is accepted in J. of Phys: Conds. Matter

Journal ref: J. Phys. Condens. Mat. 23 (2011),176001--1-5

Role of charge carriers for ferromagnetism in cobalt-doped rutile TiO2

Authors: T Fukumura, H Toyosaki, K Ueno, M Nakano, M Kawasaki

Abstract: Electric and magnetic properties of a high temperature ferromagnetic oxide semiconductor, cobalt-doped rutile TiO2, are summarized. The cobalt-doped rutile TiO2 epitaxial thin films with different electron densities and cobalt contents were grown on r-sapphire substrates with laser molecular beam epitaxy. Results of magnetization, magnetic circular dichroism, and anomalous Hall effect measuremen… ▽ More Electric and magnetic properties of a high temperature ferromagnetic oxide semiconductor, cobalt-doped rutile TiO2, are summarized. The cobalt-doped rutile TiO2 epitaxial thin films with different electron densities and cobalt contents were grown on r-sapphire substrates with laser molecular beam epitaxy. Results of magnetization, magnetic circular dichroism, and anomalous Hall effect measurements were examined for samples with systematically varied electron densities and cobalt contents. The samples with high electron densities and cobalt contents show the high temperature ferromagnetism, suggesting that charge carriers induce the ferromagnetism. △ Less

Submitted 24 May, 2008; originally announced May 2008.

Comments: 14 pages, 12 figures

Journal ref: New J. Phys. 10, 055018 (2008)

X-ray Anomalous Scattering of Diluted Magnetic Oxide Semiconductors: Possible Evidence of Lattice Deformation for High Temperature Ferromagnetism

Authors: Takeshi Matsumura, Daisuke Okuyama, Shinya Niioka, Hideaki Ishida, Tadashi Satoh, Youichi Murakami, Hidemi Toyosaki, Yasuhiro Yamada, Tomoteru Fukumura, Masashi Kawasaki

Abstract: We have examined whether the Co ions crystallographically substitute on the Ti sites in rutile and anatase Ti_{1-x}$Co$_{x}$O$_{2-delta}$ thin films that exhibit room-temperature ferromagnetism. Intensities of the x-ray Bragg reflection from the films were measured around the $K… ▽ More We have examined whether the Co ions crystallographically substitute on the Ti sites in rutile and anatase Ti_{1-x}$Co$_{x}$O$_{2-delta}$ thin films that exhibit room-temperature ferromagnetism. Intensities of the x-ray Bragg reflection from the films were measured around the $K$-absorption-edge of Co. If the Co ions randomly substitute on the Ti sites, the intensity should exhibit an anomaly due to the anomalous dispersion of the atomic scattering factor of Co. However, none of the anatase and rutile samples did exhibit an anomaly, unambiguously showing that the Co ions in Ti$_{1-x}$Co$_{x}$O$_{2-delta}$ are not exactly located at the Ti sites of TiO$_2$. The absence of the anomaly is probably caused by a significant deformation of the local structure around Co due to the oxygen vacancy. We have applied the same method to paramagnetic Zn$_{1-x}$Co$_{x}$O thin films and obtained direct evidence that the Co ions are indeed substituted on the Zn sites. △ Less

Submitted 28 August, 2007; originally announced August 2007.

Comments: 5 pages, 4 figures, accepted in PRB

Journal ref: Phys. Rev. B, 76, 115320 (2007).

A scaling relation of anomalous Hall effect in ferromagnetic semiconductors and metals

Authors: Tomoteru Fukumura, Hidemi Toyosaki, Kazunori Ueno, Masaki Nakano, Takashi Yamasaki, Masashi Kawasaki

Abstract: A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity sigma_xx_ < 10^4 ohm^-1 cm^-1 are also found to exhibit similar relation: anomalous Hall conductivity sigma_AH_ approximately scales as sigma_AH_ proportional… ▽ More A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity sigma_xx_ < 10^4 ohm^-1 cm^-1 are also found to exhibit similar relation: anomalous Hall conductivity sigma_AH_ approximately scales as sigma_AH_ proportional to sigma_xx_^1.6, that is coincident with a recent theory. This relation is valid over five decades of sigma_xx_ irrespective of metallic or hopping conduction. △ Less

Submitted 20 June, 2007; originally announced June 2007.

Comments: 10 pages, 1 table, 1 figure. To be published in Jpn. J. Appl. Phys. 46, issue 26 (2007)

Report number: cond-mat/07062924

Journal ref: Jpn. J. Appl. Phys. 46, L642 (2007)

Anomalous Hall effect in anatase Ti1-xCoxO2 at low temperature regime

Authors: Kazunori Ueno, Tomoteru Fukumura, Hidemi Toyosaki, Masaki Nakano, Masashi Kawasaki

Abstract: Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity sigma_AHE is found to be proportion… ▽ More Anomalous Hall effect (AHE) of a ferromagnetic semiconductor anatase \cotio thin film is studied from 10K to 300K. Magnetic field dependence of anomalous Hall resistance is coincident with that of magnetization, while the anomalous Hall resistance decreases at low temperature in spite of nearly temperature-independent magnetization. Anomalous Hall conductivity sigma_AHE is found to be proportional to the square of Hall mobility, suggesting that charge scattering strongly affects the AHE in this system. The anatase Ti1-xCoxO2 also follows a scaling relationship to conductivity sigma_xx as sigma_AHE ~ sigma_xx^1.6, which was observed for another polymorph rutile Ti1-xCoxO2, suggesting an identical mechanism of their AHE. △ Less

Submitted 13 February, 2007; v1 submitted 16 January, 2007; originally announced January 2007.

Comments: 3 pages, 4 figures; modified Refs. 9 and 13 according to journal's queries, and modified some sentences related on sample composition of Refs. 7, 8 and 9 in order to avoid misinterpretation of these references

Journal ref: Applied Physics Letters, 90, 072103 (2007)

Indication of intrinsic room-temperature ferromagnetism in Ti1-xCoxO2-d thin film: An x-ray magnetic circular dichroism study

Authors: K. Mamiya, T. Koide, A. Fujimori, H. Tokano, H. Manaka, A. Tanaka, H. Toyosaki, T. Fukumura, M. Kawasaki

Abstract: Soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L2,3 edges of Co doped rutile TiO2 at room temperature have revealed clear multiplet features characteristic of ferromagnetic Co2+ ions coordinated by O2- ions, being in sharp contrast to the featureless XMCD spectrum of Co metal or metallic clusters. The absorption and XMCD spectra agree well with a full atomic-multiplet calcu… ▽ More Soft x-ray magnetic circular dichroism (XMCD) measurements at the Co L2,3 edges of Co doped rutile TiO2 at room temperature have revealed clear multiplet features characteristic of ferromagnetic Co2+ ions coordinated by O2- ions, being in sharp contrast to the featureless XMCD spectrum of Co metal or metallic clusters. The absorption and XMCD spectra agree well with a full atomic-multiplet calculation for the Co2+ high-spin state in the D2h-symmetry crystal field at the Ti site in rutile TiO2. The results indicate that the ferromagnetism arises from the Co2+ ions substituting the Ti4+ ions. △ Less

Submitted 7 March, 2006; originally announced March 2006.

Comments: 11 pages including 3 figures

Journal ref: Appl. Phys. Lett. 89, 062506 (2006)

Signature of Carrier-Induced Ferromagnetism in Ti_{1-x}Co_{x}O_{2-delta}: Exchange Interaction Between High-Spin Co 2+ and the Ti 3d Conduction Band

Authors: J. W. Quilty, A. Shibata, J. -Y. Son, K. Takubo, T. Mizokawa, H. Toyosaki, T. Fukumura, M. Kawasaki

Abstract: X-ray photoemission spectroscopy measurements were performed on thin-film samples of rutile Ti_{1-x}Co_{x}O_{2-delta} to reveal the electronic structure. The Co 2p core level spectra indicate that the Co ions take the high-spin Co 2+ configuration, consistent with substitution on the Ti site. The high spin state and the shift due to the exchange splitting of the conduction band suggest strong hy… ▽ More X-ray photoemission spectroscopy measurements were performed on thin-film samples of rutile Ti_{1-x}Co_{x}O_{2-delta} to reveal the electronic structure. The Co 2p core level spectra indicate that the Co ions take the high-spin Co 2+ configuration, consistent with substitution on the Ti site. The high spin state and the shift due to the exchange splitting of the conduction band suggest strong hybridization between carriers in the Ti 3d t2g band and the t2g states of the high-spin Co 2+. These observations support the argument that room temperature ferromagnetism in Ti_{1-x}Co_{x}O_{2-delta} is intrinsic. △ Less

Submitted 9 January, 2006; v1 submitted 8 July, 2005; originally announced July 2005.

Comments: 4 pages, 5 figures. Accepted for publication in Physical Review Letters

Journal ref: Phys. Rev. Lett. 96, 027202 (2006)

A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

Authors: H. Toyosaki, T. Fukumura, K. Ueno, M. Nakano, M. Kawasaki

Abstract: A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR act… ▽ More A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separated by AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ~11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface. △ Less

Submitted 6 July, 2005; originally announced July 2005.

Comments: 9 pages, 4 figures

Journal ref: Jpn. J. Appl. Phys. 44, L896 (2005)

Magnetic oxide semiconductors

Authors: T. Fukumura, H. Toyosaki, Y. Yamada

Abstract: Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magnet… ▽ More Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed. △ Less

Submitted 7 April, 2005; originally announced April 2005.

Comments: 26 pages, 5 tables, 6 figures

Journal ref: Semicond. Sci. Technol. 20, S103 (2005)

Evolution of ferromagnetic circular dichroism coincident with magnetization and anomalous Hall effect in Co-doped rutile TiO2

Authors: H. Toyosaki, T. Fukumura, Y. Yamada, M. Kawasaki

Abstract: Magnetic circular dichroism (MCD) of rutile Ti1-xCoxO2-d is systematically examined with various x and d to reveal a phase diagram for the appearance of ferromagnetism at higher carrier concentration and Co content. The phase diagram exactly matches with that determined from anomalous Hall effect (AHE). The magnetic field dependence of MCD also shows good coincidence with those of the magnetizat… ▽ More Magnetic circular dichroism (MCD) of rutile Ti1-xCoxO2-d is systematically examined with various x and d to reveal a phase diagram for the appearance of ferromagnetism at higher carrier concentration and Co content. The phase diagram exactly matches with that determined from anomalous Hall effect (AHE). The magnetic field dependence of MCD also shows good coincidence with those of the magnetization and AHE. The coincidence of these independent measurements strongly suggests single and intrinsic ferromagnetic origin. △ Less

Submitted 7 April, 2005; originally announced April 2005.

Comments: 9 pages, 4 figures

Journal ref: Appl. Phys. Lett. 86, 182503 (2005).

Carrier induced ferromagnetism in room temperature ferromagnetic semiconductor rutile TiO2 doped with Co

Authors: H. Toyosaki, T. Fukumura, Y. Yamada, K. Nakajima, T. Chikyow, T. Hasegawa, H. Koinuma, M. Kawasaki

Abstract: A ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier induced ferromagnetism in this compound. Both ferromagnetic responses are caused by the charge carriers at the band edge of host semiconductor, indicating possibili… ▽ More A ferromagnetic semiconductor, rutile (Ti,Co)O2, exhibits anomalous Hall effect at room temperature. Strong dependence of the anomalous Hall effect, as well as the magneto-optic response, on the carrier concentration suggests carrier induced ferromagnetism in this compound. Both ferromagnetic responses are caused by the charge carriers at the band edge of host semiconductor, indicating possibilities of spintronics devices operable at room temperature. △ Less

Submitted 31 July, 2003; originally announced July 2003.

Comments: 8 pages, 4 figures

Exploration of oxide-based diluted magnetic semiconductors toward transparent spintronics

Authors: T. Fukumura, Y. Yamada, H. Toyosaki, T. Hasegawa, H. Koinuma, M. Kawasaki

Abstract: A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are desc… ▽ More A review is given for the recent progress of research in the field of oxide-based diluted magnetic semiconductor (DMS), which was triggered by combinatorial discovery of transparent ferromagnet. The possible advantages of oxide semiconductor as a host of DMS are described in comparison with conventional compound semiconductors. Limits and problems for identifying novel ferromagnetic DMS are described in view of recent reports in this field. Several characterization techniques are proposed in order to eliminate unidentified ferromagnetism of oxide-based DMS (UFO). Perspectives and possible devices are also given. △ Less

Submitted 19 May, 2003; originally announced May 2003.

Comments: 10pages, 3 table, 1 figure

Journal ref: Appl. Surf. Sci. 223, 62-67 (2004)