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Using Cryogenic CMOS Control Electronics To Enable A Two-Qubit Cross-Resonance Gate
Authors:
Devin L. Underwood,
Joseph A. Glick,
Ken Inoue,
David J. Frank,
John Timmerwilke,
Emily Pritchett,
Sudipto Chakraborty,
Kevin Tien,
Mark Yeck,
John F. Bulzacchelli,
Chris Baks,
Pat Rosno,
Raphael Robertazzi,
Matthew Beck,
Rajiv V. Joshi,
Dorothy Wisnieff,
Daniel Ramirez,
Jeff Ruedinger,
Scott Lekuch,
Brian P. Gaucher,
Daniel J. Friedman
Abstract:
Qubit control electronics composed of CMOS circuits are of critical interest for next generation quantum computing systems. A CMOS-based application specific integrated circuit (ASIC) fabricated in 14nm FinFET technology was used to generate and sequence qubit control waveforms and demonstrate a two-qubit cross resonance gate between fixed frequency transmons. The controller was thermally anchored…
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Qubit control electronics composed of CMOS circuits are of critical interest for next generation quantum computing systems. A CMOS-based application specific integrated circuit (ASIC) fabricated in 14nm FinFET technology was used to generate and sequence qubit control waveforms and demonstrate a two-qubit cross resonance gate between fixed frequency transmons. The controller was thermally anchored to the T = 4K stage of a dilution refrigerator and the measured power was 23 mW per qubit under active control. The chip generated single--side banded output frequencies between 4.5 and 5.5 GHz with a maximum power output of -18 dBm. Randomized benchmarking (RB) experiments revealed an average number of 1.71 instructions per Clifford (IPC) for single-qubit gates, and 17.51 IPC for two-qubit gates. A single-qubit error per gate of $ε_{\text{1Q}}$=8e-4 and two-qubit error per gate of $ε_\text{2Q}$=1.4e-2 is shown. A drive-induced Z-rotation is observed by way of a rotary echo experiment; this observation is consistent with expected qubit behavior given measured excess local oscillator (LO) leakage from the CMOS chip. The effect of spurious drive induced Z-errors is numerically evaluated with a two-qubit model Hamiltonian, and shown to be in good agreement with measured RB data. The modeling results suggest the Z-error varies linearly with pulse amplitude.
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Submitted 8 December, 2023; v1 submitted 22 February, 2023;
originally announced February 2023.
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Modeling of parallel power MOSFETs in steady-state
Authors:
Minh Nhat Huynh,
Minh Khoi Nguyen Tien,
Cong Toai Truong,
Minh Tri Nguyen,
Quoc Minh Lam,
Van Tu Duong,
Huy Hung Nguyen,
Tan Tien Nguyen
Abstract:
In high-power applications, multiple power MOSFETs are connected in parallel and treated as a single switch in order to handle much larger total currents. In this paper, a parallel power MOSFETs model from the turnoff state until they reach their steady state is introduced. The model represents the relationship between each power MOSFET's gate voltage and the current distribution among them. The s…
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In high-power applications, multiple power MOSFETs are connected in parallel and treated as a single switch in order to handle much larger total currents. In this paper, a parallel power MOSFETs model from the turnoff state until they reach their steady state is introduced. The model represents the relationship between each power MOSFET's gate voltage and the current distribution among them. The study's key purpose is to use the model for dealing with the asymmetry in sharing current and power loss between these semiconductor devices during the steady state region.
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Submitted 15 February, 2023;
originally announced February 2023.
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Evidence for Semileptonic B- to p pbar l nubar Decays
Authors:
K. -J. Tien,
M. -Z. Wang,
I. Adachi,
H. Aihara,
D. M. Asner,
V. Aulchenko,
T. Aushev,
A. M. Bakich,
A. Bala,
B. Bhuyan,
A. Bozek,
M. Bračko,
T. E. Browder,
P. Chang,
V. Chekelian,
A. Chen,
P. Chen,
B. G. Cheon,
K. Chilikin,
R. Chistov,
I. -S. Cho,
K. Cho,
V. Chobanova,
Y. Choi,
D. Cinabro
, et al. (144 additional authors not shown)
Abstract:
We find evidence for the semileptonic baryonic decay $B^-\to p\bar p\ell^-\barν_\ell$ ($\ell=e,μ$), based on a data sample of 772 million $B\bar B$ pairs collected at the $Υ(4S)$ resonance with the Belle detector at the KEKB asymmetric-energy electron-positron collider. A neural-network based hadronic $B$-meson tagging method is used in this study. The branching fraction of…
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We find evidence for the semileptonic baryonic decay $B^-\to p\bar p\ell^-\barν_\ell$ ($\ell=e,μ$), based on a data sample of 772 million $B\bar B$ pairs collected at the $Υ(4S)$ resonance with the Belle detector at the KEKB asymmetric-energy electron-positron collider. A neural-network based hadronic $B$-meson tagging method is used in this study. The branching fraction of $B^-\to p\bar p\ell^-\barν_\ell$ is measured to be $(5.8^{+2.4}_{-2.1}\textrm{(stat.)}\pm 0.9\textrm{(syst.)})\times 10^{-6}$ with a significance of 3.2$σ$, where lepton universality is assumed. We also estimate the corresponding upper limit: $\mathcal{B}(B^-\to p\bar p\ell^-\barν_\ell) < 9.6\times 10^{-6}$ at the 90% confidence level. This measurement helps constrain the baryonic transition form factor in B decays.
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Submitted 4 October, 2013; v1 submitted 14 June, 2013;
originally announced June 2013.
