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Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
M. V. Durnev,
J. Loher,
D. Schuh,
D. Bougeard,
S. V. Ivanov,
S. D. Ganichev
Abstract:
Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting…
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Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band kp method and g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying tilted magnetic field.
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Submitted 11 October, 2016;
originally announced October 2016.
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Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
H. Plank,
J. Loher,
D. Schuh,
D. Bougeard,
D. Weiss,
M. V. Durnev,
S. A. Tarasenko,
I. V. Rozhansky,
S. V. Ivanov,
D. R. Yakovlev,
S. D. Ganichev
Abstract:
We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field…
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We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.
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Submitted 21 February, 2015;
originally announced February 2015.
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Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
J. Loher,
D. Schuh,
D. Bougeard,
D. Weiss,
M. V. Durnev,
S. A. Tarasenko,
M. S. Mukhin,
S. V. Ivanov,
S. D. Ganichev
Abstract:
Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by…
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Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes.
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Submitted 30 January, 2014; v1 submitted 29 January, 2014;
originally announced January 2014.
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Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation
Authors:
P. Olbrich,
C. Zoth,
P. Lutz,
C. Drexler,
V. V. Bel'kov,
Ya. V. Terent'ev,
S. A. Tarasenko,
A. N. Semenov,
S. V. Ivanov,
D. R. Yakovlev,
T. Wojtowicz,
U. Wurstbauer,
D. Schuh,
S. D. Ganichev
Abstract:
We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalen…
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We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.
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Submitted 27 April, 2012;
originally announced April 2012.
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Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs
Authors:
Ya. V. Terent'ev,
C. Zoth,
V. V. Bel'kov,
P. Olbrich,
C. Drexler,
V. Lechner,
P. Lutz,
A. N. Semenov,
V. A. Solov'ev,
I. V. Sedova,
G. V. Klimko,
T. A. Komissarova,
S. V. Ivanov,
S. D. Ganichev
Abstract:
A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by…
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A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.
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Submitted 5 April, 2011;
originally announced April 2011.
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Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation
Authors:
C. Drexler,
V. V. Bel'kov,
B. Ashkinadze,
P. Olbrich,
C. Zoth,
V. Lechner,
Ya. V. Terent'ev,
D. R. Yakovlev,
G. Karczewski,
T. Wojtowicz,
D. Schuh,
W. Wegscheider,
S. D. Ganichev
Abstract:
We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding…
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We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current.
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Submitted 16 September, 2010;
originally announced September 2010.
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Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well
Authors:
A. A. Toropov,
I. V. Sedova,
S. V. Sorokin,
Ya. V. Terent'ev,
E. L. Ivchenko,
S. V. Ivanov
Abstract:
We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitating penetration of the electron wave function from the diluted magnetic semiconductor ZnCdMnSe QW into the nonmagnetic GaAs QW and vice versa. Magneto…
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We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitating penetration of the electron wave function from the diluted magnetic semiconductor ZnCdMnSe QW into the nonmagnetic GaAs QW and vice versa. Magneto-photoluminescence studies demonstrate level anticrossing and strong intermixing resulting in a drastic renormalization of the electron effective g factor, in perfect agreement with the energy level calculations.
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Submitted 16 November, 2004;
originally announced November 2004.
