Showing 1–11 of 11 results for author: Tedesco, J L

Giant magneto-optical Kerr enhancement from films on SiC due to the optical properties of the substrate

Authors: A. Mukherjee, C. T. Ellis, M. M. Arik, P. Taheri, E. Oliverio, P. Fowler, J. G. Tischler, Y. Liu, E. R. Glaser, R. L. Myers-Ward, J. L. Tedesco, C. R. Eddy Jr, D. Kurt Gaskill, H. Zeng, G. Wang, J. Cerne

Abstract: We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a factor of 68, which is in good agreement with Kerr signal modeling. Strong Kerr enhancement is also observed in Fe films grown on SiC and Al-doped bulk Si… ▽ More We report a giant enhancement of the mid-infrared (MIR) magneto-optical complex Kerr angle (polarization change of reflected light) in a variety of materials grown on SiC. In epitaxially-grown multilayer graphene, the Kerr angle is enhanced by a factor of 68, which is in good agreement with Kerr signal modeling. Strong Kerr enhancement is also observed in Fe films grown on SiC and Al-doped bulk SiC. Our experiments and modelling indicate that the enhancement occurs at the high-energy edge of the SiC reststrahlen band where the real component of the complex refractive index n passes through unity. Furthermore, since the signal is greatly enhanced when n=1, the enhancement is predicted to exist over the entire visible/infrared (IR) spectrum for a free-standing film. We also predict similar giant enhancement in both Faraday (transmission) and Kerr rotation for thin films on a metamaterial substrate with refractive index n=-1. This work demonstrates that the substrate used in MOKE measurements must be carefully chosen when investigating magneto-optical materials with weak MOKE signals or when designing MOKE-based optoelectronic devices. △ Less

Submitted 19 January, 2019; originally announced January 2019.

Comments: 15 pages, 4 figures

Multi-carrier Transport in Epitaxial Multi-layer Graphene

Authors: Yu-Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer, Shu-Jen Han, Yanqing Wu, Wenjuan Zhu, D. Kurt Gaskill, Joseph L. Tedesco, Rachael L. Myers-Ward, Charles R. Eddy Jr., Alfred Grill, Phaedon Avouris

Abstract: Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport… ▽ More Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-layer graphene, regardless of SiC face. However, in multi-layer graphene (MLG) grown on C-face SiC, the Hall measurements indicated the existence of several groups of carriers with distinct mobilities. Electrical transport in MLG can be properly described by invoking three independent conduction channels in parallel. Two of these are n- and p-type, while the third involves nearly intrinsic graphene. The carriers in this lightly doped channel have significantly higher mobilities than the other two. △ Less

Submitted 1 September, 2010; originally announced September 2010.

Comments: 13 pages, 3 figures, accepted in Appl. Phys. Lett

Morphology Characterization of Argon-Mediated Epitaxial Graphene on C-face SiC

Authors: Joseph L. Tedesco, Glenn G. Jernigan, James C. Culbertson, Jennifer K. Hite, Yang Yang, Kevin M. Daniels, Rachael L. Myers-Ward, Charles R. Eddy, Jr., Joshua A. Robinson, Kathleen A. Trumbull, Maxwell T. Wetherington, Paul M. Campbell, D. Kurt Gaskill

Abstract: Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of th… ▽ More Epitaxial graphene layers were grown on the C-face of 4H- and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: 12 pages, 4 figures

Journal ref: Appl. Phys. Lett. 96, 222103 (2010)

Conducting Atomic Force Microscopy Studies of Nanoscale Cobalt Silicide Schottky Barriers on Si(111) and Si(100)

Authors: Joseph L. Tedesco, J. E. Rowe, Robert J. Nemanich

Abstract: Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (~0.1 to 0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) followed by annealing to ~880 degrees C. Conducting atomic force microscopy has been performed on these islands to characterize and measure their current-voltage (I-V) characteristics. Current-voltage curves were analyzed usin… ▽ More Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (~0.1 to 0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) followed by annealing to ~880 degrees C. Conducting atomic force microscopy has been performed on these islands to characterize and measure their current-voltage (I-V) characteristics. Current-voltage curves were analyzed using thermionic emission theory to obtain the Schottky barrier heights and ideality factors between the silicide islands and the silicon substrates. Current-voltage measurements were performed ex situ for samples ("passivated surfaces") where the silicon surface surrounding the islands was passivated with a native oxide. Other samples ("clean surfaces") remained in UHV while I-V curves were recorded. By comparing barrier heights and ideality factors for islands on both surfaces, the effects of the non-passivated surfaces on conduction were studied. The clean surface barrier heights were found to be ~0.2 to 0.3 eV below barrier heights measured from similar islands on passivated surfaces. The reduced Schottky barrier is mainly attributed to Fermi level pinning by non-passivated surface states of the clean silicon surface. However, the measured barrier heights of the clean surface islands are equivalent on both Si(111) and Si(100), suggesting that the non-passivated surfaces are influenced by cobalt impurities. Furthermore, the barrier heights of islands on the clean surfaces are lower than due to Fermi level pinning alone and the additional barrier height lowering is primarily attributed to spreading resistance effects. Schottky barrier inhomogeneity may also cause additional barrier height lowering and non-ideality in the contacts. The clean surface barrier heights decreased and the ideality factors increased with decreasing temperature, which is attributed to the temperature variation of the Fermi level. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: 26 pages, 6 figures

Journal ref: J. Appl. Phys. 105, 083721 (2009)

Titanium Silicide Islands on Atomically Clean Si(100): Identifying Single Electron Tunneling Effects

Authors: Joseph L. Tedesco, J. E. Rowe, Robert J. Nemanich

Abstract: Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (< 2 nm) on atomically clean Si(100) substrates followed by annealing to ~800 degrees C. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy have been performed on these islands to record current-voltage (I-V) curves. Because each island forms a double barrier tunnel junction… ▽ More Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (< 2 nm) on atomically clean Si(100) substrates followed by annealing to ~800 degrees C. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy have been performed on these islands to record current-voltage (I-V) curves. Because each island forms a double barrier tunnel junction (DBTJ) structure with the STM tip and the substrate, they would be expected to exhibit single electron tunneling (SET) according to the orthodox model of SET. Some of the islands formed are small enough (diameter < 10 nm) to exhibit SET at room temperature and evidence of SET has been identified in some of the I-V curves recorded from these small islands. Those curves are analyzed within the framework of the orthodox model and are found to be consistent with that model, except for slight discrepancies of the shape of the I-V curves at current steps. However, most islands that were expected to exhibit SET did not do so, and the reasons for the absence of observable SET are evaluated. The most likely reasons for the absence of SET are determined to be a wide depletion region in the substrate and Schottky barrier lowering due to Fermi level pinning by surface states of the clean silicon near the islands. The results establish that although the Schottky barrier can act as an effective tunnel junction in a DBTJ structure, the islands may be unreliable in future nanoelectronic devices. Therefore, methods are discussed to improve the reliability of future devices. △ Less

Submitted 28 July, 2010; originally announced July 2010.

Comments: 24 pages, 5 figures

Journal ref: J. Appl. Phys. 107, 123715 (2010)

Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates

Authors: Joshua D. Caldwell, Travis J. Anderson, James C. Culbertson, Glenn G. Jernigan, Karl D. Hobart, Fritz J. Kub, Marko J. Tadjer, Joseph L. Tedesco, Jennifer K. Hite, Michael A. Mastro, Rachael L. Myers-Ward, Charles R. Eddy Jr., Paul M. Campbell, D. Kurt Gaskill

Abstract: In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr… ▽ More In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts. △ Less

Submitted 14 October, 2009; originally announced October 2009.

Comments: 8 pages, 4 figures and supplementary info regarding procedure for transfer

Journal ref: ACS Nano 4(2), 1108-1114 (2010)

Epitaxial Graphene Growth on SiC Wafers

Authors: D. Kurt Gaskill, Glenn G. Jernigan, Paul M. Campbell, Joseph L. Tedesco, James C. Culbertson, Brenda L. VanMil, Rachael L. Myers-Ward, Charles R. Eddy, Jr., Jeong Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, Joshua A. Robinson, Mark A. Fanton, Joseph P. Stitt, Thomas Stitt, David Snyder, Xiaojun Weng, Eric Frantz

Abstract: An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm Si… ▽ More An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 215th Meeting of the Electrochemical Society, 8 pages, 8 figures

Journal ref: ECS Trans. 19, 117 (2009)

Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, James C. Culbertson, Glenn G. Jernigan, Paul M. Campbell, Joseph M. McCrate, Stephen A. Kitt, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free c… ▽ More Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: 215th Meeting of the Electrochemical Society (ECS 215), 14 pages, 6 figures

Journal ref: ECS Trans. 19, 137 (2009)

Graphene formation on SiC substrates

Authors: Brenda L. VanMil, Rachael L. Myers-Ward, Joseph L. Tedesco, Charles R. Eddy, Jr., Glenn G. Jernigan, James C. Culbertson, Paul M. Campbell, Joseph M. McCrate, Stephen A. Kitt, D. Kurt Gaskill

Abstract: Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A… ▽ More Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis sub-strates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; sur-face steps were up to 15 nm high and the uniform step morphology was sometimes lost. Mo-bilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 um square) samples are presented and shown to compare favorably to recent reports. △ Less

Submitted 28 July, 2009; originally announced July 2009.

Comments: European Conference on Silicon Carbide and Related Materials 2008 (ECSCRM '08), 4 pages, 4 figures

Journal ref: Mater. Sci. Forum 615-617, 211 (2009)

Hall Effect Mobility of Epitaxial Graphene Grown on Silicon Carbide

Authors: Joseph L. Tedesco, Brenda L. VanMil, Rachael L. Myers-Ward, Joseph M. McCrate, Stephen A. Kitt, Paul M. Campbell, Glenn G. Jernigan, James C. Culbertson, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carr… ▽ More Epitaxial graphene films were grown in vacuo by silicon sublimation from the (0001) and (000-1) faces of 4H- and 6H-SiC. Hall effect mobilities and sheet carrier densities of the films were measured at 300 K and 77 K and the data depended on the growth face. About 40% of the samples exhibited holes as the dominant carrier, independent of face. Generally, mobilities increased with decreasing carrier density, independent of carrier type and substrate polytype. The contributions of scattering mechanisms to the conductivities of the films are discussed. The results suggest that for near-intrinsic carrier densities at 300 K epitaxial graphene mobilities will be ~150,000 cm2V-1s-1 on the (000-1) face and ~5,800 cm2V-1s-1 on the (0001) face. △ Less

Submitted 29 July, 2009; originally announced July 2009.

Comments: Accepted for publication in Applied Physics Letters, 10 pages, 2 figures

Journal ref: Appl. Phys. Lett 95, 122102 (2009)

Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale

Authors: Joshua A. Robinson, Maxwell Wetherington, Joseph L. Tedesco, Paul M. Campbell, Xiaojun Weng, Joseph Stitt, Mark A. Fanton, Eric Frantz, David Snyder, Brenda L. VanMil, Glenn G. Jernigan, Rachael L. Myers-Ward, Charles R. Eddy, Jr., D. Kurt Gaskill

Abstract: We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the devic… ▽ More We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on thickness uniformity but also on monolayer strain uniformity. Only when both thickness and strain are uniform over a significant fraction (> 40%) of the device active area does the mobility exceed 1000 cm2/V-s. Additionally, we achieve high mobility epitaxial graphene (18,100 cm2/V-s at room temperature) on the C-face of SiC [SiC(000-1)] and show that carrier mobility depends strongly on the graphene layer stacking. These findings provide a means to rapidly estimate carrier mobility and provide a guide to achieve very high mobility in epitaxial graphene. Our results suggest that ultra-high mobilities (>50,000 cm2/V-s) are achievable via the controlled formation of uniform, rotationally faulted epitaxial graphene. △ Less

Submitted 27 February, 2009; originally announced February 2009.

Comments: 13 pages including supplimental material. Submitted to Nature Materials 2/23/2009