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Lattice stability and formation energies of intrinsic defects in Mg2Si and Mg2Ge via first principles simulations
Authors:
Philippe Jund,
Romain Viennois,
Catherine Colinet,
Gilles Hug,
Mathieu Fevre,
Jean-Claude Tedenac
Abstract:
We report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) compounds and in particular we analyze the formation energy of the different point defects with the aim to understand the intrinsic doping mechanisms. We find that the formation energy of Mg2Ge is 50 % larger than the one of Mg2Si, in agreement with the experimental tendency. From the study of the stability and the electroni…
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We report an ab initio study of the semiconducting Mg2X (with X = Si, Ge) compounds and in particular we analyze the formation energy of the different point defects with the aim to understand the intrinsic doping mechanisms. We find that the formation energy of Mg2Ge is 50 % larger than the one of Mg2Si, in agreement with the experimental tendency. From the study of the stability and the electronic properties of the most stable defects taking into account the growth conditions, we show that the main reason for the n-doping in these materials comes from interstitial magnesium defects. Conversely, since other defects acting like acceptors such as Mg vacancies or multivacancies are more stable in Mg2Ge than in Mg2Si, this explains why Mg2Ge can be of n or p type, contrary to Mg2Si. The finding that the most stable defects are different in Mg2Si and Mg2Ge and depend on the growth conditions is important and must be taken into account in the search of the optimal doping to improve the thermoelectric properties of these materials.
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Submitted 27 September, 2013;
originally announced September 2013.
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Physical properties of thermoelectric zinc antimonide using first-principles calculations
Authors:
Philippe Jund,
Romain Viennois,
Xiaoma Tao,
Kinga Niedziolka,
Jean-Claude Tedenac
Abstract:
We report first principles calculations of the structural, electronic, elastic and vibrational properties of the semiconducting orthorhombic ZnSb compound. We study also the intrinsic point defects in order to eventually improve the thermoelectric properties of this already very promising thermoelectric material. Concerning the electronic properties, in addition to the band structure, we show that…
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We report first principles calculations of the structural, electronic, elastic and vibrational properties of the semiconducting orthorhombic ZnSb compound. We study also the intrinsic point defects in order to eventually improve the thermoelectric properties of this already very promising thermoelectric material. Concerning the electronic properties, in addition to the band structure, we show that the Zn (Sb) crystallographically equivalent atoms are not exactly equivalent from the electronic point of view. Lattice dynamics, elastic and thermodynamic properties are found to be in good agreement with experiments and they confirm the non equivalency of the zinc and antimony atoms from the vibrational point of view. The calculated elastic properties show a relatively weak anisotropy and the hardest direction is the y direction. We observe the presence of low energy modes involving both Zn and Sb atoms at about 5-6 meV, similarly to what has been found in Zn4Sb3 and we suggest that the interactions of these modes with acoustic phonons could explain the relatively low thermal conductivity of ZnSb. Zinc vacancies are the most stable defects and this explains the intrinsic p-type conductivity of ZnSb.
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Submitted 6 July, 2012;
originally announced July 2012.
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Physical properties of Thallium-Tellurium based thermoelectric compounds using first-principles simulations
Authors:
Xiaoma Taoa,
Philippe Jund,
Romain Viennois,
Jean-Claude Tédenac
Abstract:
We present a study of the thermodynamic and physical properties of Tl5Te3, BiTl9Te6 and SbTl9Te6 compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The electronic density of states and band structures are calculated to understand the bonding mechanism in the three compounds. The indi…
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We present a study of the thermodynamic and physical properties of Tl5Te3, BiTl9Te6 and SbTl9Te6 compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The electronic density of states and band structures are calculated to understand the bonding mechanism in the three compounds. The indirect band gap of BiTl9Te6 and SbTl9Te6 compounds are found to be equal to 0.256 eV and 0.374 eV, respectively. The spin-orbit coupling has important effects on the electronic structure of the two semiconducting compounds and should therefore be included for a good numerical description of these materials. The elastic constants of the three compounds have been calculated, and the bulk modulus, shear modulus, and young's modulus have been determined. The change from ductile to brittle behavior after Sb or Bi alloying is related to the change of the electronic properties. Finally, the Debye temperature, longitudinal, transverse and average sound velocities have been obtained.
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Submitted 3 November, 2011;
originally announced November 2011.
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Phase stability and physical properties of Ta5Si3 compounds from first-principles calculations,
Authors:
Xiaoma Tao,
Philippe Jund,
Catherine Colinet,
Jean-Claude Tedenac
Abstract:
We present a study of the thermodynamic and physical properties of Ta5Si3 compounds by means of density functional theory based calculations. Among the three different structures (D8m, D8l, D88), the D8l structure (Cr5B3-prototype) is the low temperature phase with a high formation enthalpy of -449.20kJ/mol, the D8m structure (W5Si3-prototype) is the high temperature phase with a formation enthalp…
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We present a study of the thermodynamic and physical properties of Ta5Si3 compounds by means of density functional theory based calculations. Among the three different structures (D8m, D8l, D88), the D8l structure (Cr5B3-prototype) is the low temperature phase with a high formation enthalpy of -449.20kJ/mol, the D8m structure (W5Si3-prototype) is the high temperature phase with a formation enthalpy of -419.36kJ/mol, and the D88 structure (Mn5Si3-prototype) is a metastable phase. The optimized lattice constants of the different Ta5Si3 compounds are also in good agreement with the experimental data. The electronic density of states (DOS) and the bonding charge density have also been calculated to elucidate the bonding mechanism in these compounds and the results indicate that bonding is mostly of covalent nature. The elastic constants of the D8m and D8l structures have been calculated together with the different moduli. Finally, by using a quasiharmonic Debye model, the Debye temperature, the heat capacity, the coefficient of thermal expansion and the Grüneisen parameter have also been obtained in the present work. The transformation temperature (2303.7K) between the D8m and the D8l structures has been predicted by means of the Gibbs energy, and this predicted temperature (2303.7K) is close to the experimental value (2433.5K).
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Submitted 3 November, 2011;
originally announced November 2011.
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Effect of doping on the thermoelectric properties of thallium tellurides using first principles calculations
Authors:
Philippe Jund,
Xiaoma Tao,
Romain Viennois,
Jean-Claude Tédenac
Abstract:
We present a study of the electronic properties of Tl5Te3, BiTl9Te6 and SbTl9Te6 compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The band gap of BiTl9Te6 and SbTl9Te6 compounds are found to be equal to 0.589 eV and 0.538 eV, respectively and are in agreement with the available exp…
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We present a study of the electronic properties of Tl5Te3, BiTl9Te6 and SbTl9Te6 compounds by means of density functional theory based calculations. The optimized lattice constants of the compounds are in good agreement with the experimental data. The band gap of BiTl9Te6 and SbTl9Te6 compounds are found to be equal to 0.589 eV and 0.538 eV, respectively and are in agreement with the available experimental data. To compare the thermoelectric properties of the different compounds we calculate their thermopower using Mott's law and show, as expected experimentally, that the substituted tellurides have much better thermoelectric properties compared to the pure compound.
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Submitted 2 November, 2011;
originally announced November 2011.
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Stability and thermoelectric properties of transition metal silicides from first principles calculations
Authors:
P. Jund,
X. Tao,
R. Viennois,
C. Colinet,
J. -C. Tedenac
Abstract:
We report an ab-initio study of the stability and electronic properties of transition metal silicides in order to study their potential for high temperature thermoelectric applications. We focus on the family M5Si3 (M = Ta, W) which is stable up to about 2000 °C. We first investigate the structural stability of the two compounds and then determine the thermopower of the equilibrium structure using…
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We report an ab-initio study of the stability and electronic properties of transition metal silicides in order to study their potential for high temperature thermoelectric applications. We focus on the family M5Si3 (M = Ta, W) which is stable up to about 2000 °C. We first investigate the structural stability of the two compounds and then determine the thermopower of the equilibrium structure using the electronic density of states and Mott's law. We find that W5Si3 has a relatively large thermopower but probably not sufficient enough for thermoelectric applications.
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Submitted 2 November, 2011;
originally announced November 2011.
