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On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact
Authors:
Jules Duraz,
Hassen Souissi,
Maksym Gromovyi,
David Troadec,
Teo Baptiste,
Nathaniel Findling,
Phuong Vuong,
Rajat Gujrati,
Thi May Tran,
Jean Paul Salvestrini,
Maria Tchernycheva,
Suresh Sundaram,
Abdallah Ougazzaden,
Gilles Patriarche,
Sophie Bouchoule
Abstract:
The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide…
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The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide (NiOx) is accompanied by Au diffusion down to the GaN surface, and by Ga out-diffusion through the GaN/metal interface. Electrical characterizations of the contact by Transmission Line Method (TLM) show that an ohmic contact is obtained as soon as a thin, Au-Ga interfacial layer is formed, even after complete diffusion of Ni or NiOx to the top surface of the contact. Our results clarify that the presence of Ni or NiOx at the interface is not the main origin of the ohmic-like behavior in such contacts. Auto-cleaning of the interface during the interdiffusion process may play a role, but TEM-EDX analysis evidences that the creation of Ga vacancies associated to the formation of a Ga-Au interfacial layer is crucial for reducing the Schottky barrier height, and maximizing the amount of current flowing through the contact.
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Submitted 10 February, 2025; v1 submitted 16 December, 2024;
originally announced December 2024.
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Lasing of Quantum-Dot Micropillar Lasers under Elevated Temperatures
Authors:
Andrey Babichev,
Ivan Makhov,
Natalia Kryzhanovskaya,
Alexey Blokhin,
Yuriy Zadiranov,
Yulia Salii,
Marina Kulagina,
Mikhail Bobrov,
Alexey Vasiliev,
Sergey Blokhin,
Nikolay Maleev,
Maria Tchernycheva,
Leonid Karachinsky,
Innokenty Novikov,
Anton Egorov
Abstract:
A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (~65000 for 5 $μ$m pillar) due to better vertical mode confinement. The minimum laser threshold (~370 $μ$W for 5 $μ$m pillar) coincided with a temperature of 130…
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A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (~65000 for 5 $μ$m pillar) due to better vertical mode confinement. The minimum laser threshold (~370 $μ$W for 5 $μ$m pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.
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Submitted 23 July, 2024;
originally announced July 2024.
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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells
Authors:
Patrick Quach,
Arnaud Jollivet,
Andrey Babichev,
Nathalie Isac,
Martina Morassi,
Aristide Lemaitre,
Pavel Yunin,
Eric Frayssinet,
Philippe de Mierry,
Mathieu Jeannin,
Adel Bousseksou,
Raffaele Colombelli,
Maria Tchernycheva,
Yvon Cordier,
François Julien
Abstract:
We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride…
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We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.
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Submitted 14 April, 2022;
originally announced April 2022.
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Crystal polarity discrimination for GaN nanowires on graphene
Authors:
Alexander Pavlov,
Alexey Mozharov,
Yury Berdnikov,
Camille Barbier,
Jean-Christophe Harmand,
Maria Tchernycheva,
Roman Polozkov,
Ivan Mukhin
Abstract:
We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate that among different possible configurations of Ga and N atoms only the N-polar one is stable. We suggest that polarity discrimination occurs due to t…
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We present experimental data and computational analysis of the formation of GaN nanowires on graphene virtual substrates. We show that GaN nanowires on graphene exhibit nitrogen polarity. We employ the DFT-based computational analysis to demonstrate that among different possible configurations of Ga and N atoms only the N-polar one is stable. We suggest that polarity discrimination occurs due to the dipole interaction between the GaN nanocrystal and $π$-orbitals of the graphene sheet.
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Submitted 21 July, 2021;
originally announced July 2021.
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Modified silicone rubbers for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with single-walled carbon nanotube transparent contact
Authors:
Vladimir Neplokh,
Fedor M. Kochetkov,
Konstantin V. Deriabin,
Vladimir V. Fedorov,
Alexey D. Bolshakov,
Igor E. Eliseev,
Vladimir Yu. Mikhailovskii,
Daniil A. Ilatovskii,
Dmitry V. Krasnikov,
Maria Tchernycheva,
George E. Cirlin,
Albert G. Nasibulin,
Ivan S. Mukhin,
Regina M. Islamova
Abstract:
This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane-graft-polystyrene and released from the Si growth substrate. The fabricated membranes…
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This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane-graft-polystyrene and released from the Si growth substrate. The fabricated membranes were contacted with different materials including single-walled carbon nanotubes or ferrocenyl-containing polymethylhydrosiloxane with and without multi-walled carbon nanotubes doping. The electrical connection of the fabricated membranes was verified by electron beam induced current (EBIC) spectroscopy. The developed methods and materials can be applied for fabrication of high quality flexible inorganic optoelectronic devices.
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Submitted 29 October, 2019;
originally announced October 2019.
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Nanometre scale monitoring of the quantum confined stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires
Authors:
L. F. Zagonel,
L. H. G. Tizei,
G. Z. Vitiello,
G. Jacopin,
L. Rigutti,
M. Tchernycheva,
F. H. Julien,
R. Songmuang,
T. Ostasevicius,
F. de la Peña,
C. Ducati,
P. A Midgley,
M. Kociak
Abstract:
We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spannin…
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We report on a detailed study of the intensity dependent optical properties of individual GaN/AlN Quantum Disks (QDisks) embedded into GaN nanowires (NW). The structural and optical properties of the QDisks were probed by high spatial resolution cathodoluminescence (CL) in a scanning transmission electron microscope (STEM). By exciting the QDisks with a nanometric electron beam at currents spanning over 3 orders of magnitude, strong non-linearities (energy shifts) in the light emission are observed. In particular, we find that the amount of energy shift depends on the emission rate and on the QDisk morphology (size, position along the NW and shell thickness). For thick QDisks (>4nm), the QDisk emission energy is observed to blue-shift with the increase of the emission intensity. This is interpreted as a consequence of the increase of carriers density excited by the incident electron beam inside the QDisks, which screens the internal electric field and thus reduces the quantum confined Stark effect (QCSE) present in these QDisks. For thinner QDisks (<3 nm), the blue-shift is almost absent in agreement with the negligible QCSE at such sizes. For QDisks of intermediate sizes there exists a current threshold above which the energy shifts, marking the transition from unscreened to partially screened QCSE. From the threshold value we estimate the lifetime in the unscreened regime. These observations suggest that, counterintuitively, electrons of high energy can behave ultimately as single electron-hole pair generators. In addition, when we increase the current from 1 pA to 10 pA the light emission efficiency drops by more than one order of magnitude. This reduction of the emission efficiency is a manifestation of the efficiency droop as observed in nitride-based 2D light emitting diodes, a phenomenon tentatively attributed to the Auger effect.
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Submitted 24 May, 2016;
originally announced May 2016.
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Visualising highly localised luminescence in GaN/AlN heterostructures in nanowires
Authors:
L. F. Zagonel,
L. Rigutti,
M. Tchernycheva,
G. Jacopin,
R. Songmuang,
M. Kociak
Abstract:
The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM) operating in spectrum imaging mode. For the electron beam excitation in the QDisc region, the luminescence signal is highly localized with spatial extension as low as…
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The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM) operating in spectrum imaging mode. For the electron beam excitation in the QDisc region, the luminescence signal is highly localized with spatial extension as low as 5 nm due to the high band gap difference between GaN and AlN. This allows for the discrimination between the emission of neighbouring QDiscs and for evidencing the presence of lateral inclusions, about 3 nm thick and 20 nm long rods (quantum rods, QRods), grown unintentionally on the nanowire sidewalls. These structures, also observed by STEM dark-field imaging, are proven to be optically active in nanoCL, emitting at similar, but usually shorter, wavelengths with respect to most QDiscs.
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Submitted 7 February, 2015; v1 submitted 12 September, 2012;
originally announced September 2012.
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Nanometer Scale Spectral Imaging of Quantum Emitters in Nanowires and Its Correlation to Their Atomically Resolved Structure
Authors:
Luiz Fernando Zagonel,
Stefano Mazzucco,
Marcel Tencé,
Katia March,
Romain Bernard,
Benoît Laslier,
Gwénolé Jacopin,
Maria Tchernycheva,
Lorenzo Rigutti,
Francois H. Julien,
Rudeesun Songmuang,
Mathieu Kociak
Abstract:
We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the possibility to measure full spectral features of individual quantum emitters as small as 1 nm and separated from each other by only a few nanometers and the ability to c…
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We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the possibility to measure full spectral features of individual quantum emitters as small as 1 nm and separated from each other by only a few nanometers and the ability to correlate their optical properties to their size, measured with atomic resolution. The direct correlation between the quantum disk size and emission wavelength provides evidence of the quantum confined Stark effect leading to an emission below the bulk GaN band gap for disks thicker than 2.6 nm. With the help of simulations, we show that the internal electric field in the studied quantum disks is smaller than what is expected in the quantum well case. We show evidence of a clear dispersion of the emission wavelengths of different quantum disks of identical size but different positions along the wire. This dispersion is systematically correlated to a change of the diameter of the AlN shell coating the wire and is thus attributed to the related strain variations along the wire. The present work opens the way both to fundamental studies of quantum confinement in closely packed quantum emitters and to characterizations of optoelectronic devices presenting carrier localization on the nanometer scale.
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Submitted 5 September, 2012;
originally announced September 2012.
