Showing 1–50 of 51 results for author: Tan, H H

Optically detected magnetic resonance of wafer-scale hexagonal boron nitride thin films

Authors: Sam C. Scholten, Jakub Iwański, Kaijian Xing, Johannes Binder, Aleksandra K. Dąbrowska, Hark H. Tan, Tin S. Cheng, Jonathan Bradford, Christopher J. Mellor, Peter H. Beton, Sergei V. Novikov, Jan Mischke, Sergej Pasko, Emre Yengel, Alexander Henning, Simonas Krotkus, Andrzej Wysmołek, Jean-Philippe Tetienne

Abstract: Hexagonal boron nitride (hBN) has recently been shown to host native defects exhibiting optically detected magnetic resonance (ODMR) with applications in nanoscale magnetic sensing and imaging. To advance these applications, deposition methods to create wafer-scale hBN films with controlled thicknesses are desirable, but a systematic study of the ODMR properties of the resultant films is lacking.… ▽ More Hexagonal boron nitride (hBN) has recently been shown to host native defects exhibiting optically detected magnetic resonance (ODMR) with applications in nanoscale magnetic sensing and imaging. To advance these applications, deposition methods to create wafer-scale hBN films with controlled thicknesses are desirable, but a systematic study of the ODMR properties of the resultant films is lacking. Here we perform ODMR measurements of thin films (3-2000nm thick) grown via three different methods: metal-organic chemical vapour deposition (MOCVD), chemical vapour deposition (CVD), and molecular beam epitaxy (MBE). We find that they all exhibit an ODMR response, including the thinnest 3nm film, albeit with different characteristics. The best volume-normalised magnetic sensitivity obtained is 30uT/sqrt(Hz um^3). We study the effect of growth temperature on a series of MOCVD samples grown under otherwise fixed conditions and find 800-900C to be an optimum range for magnetic sensitivity, with a significant improvement (up to two orders of magnitude) from post-growth annealing. This work provides a useful baseline for the magnetic sensitivity of hBN thin films deposited via standard methods and informs the feasibility of future sensing applications. △ Less

Submitted 27 May, 2025; originally announced May 2025.

Physics-Aware Inverse Design for Nanowire Single-Photon Avalanche Detectors via Deep Learning

Authors: Boyang Zhang, Zhe Li, Zhongju Wang, Yang Yu, Hark Hoe Tan, Chennupati Jagadish, Daoyi Dong, Lan Fu

Abstract: Single-photon avalanche detectors (SPADs) have enabled various applications in emerging photonic quantum information technologies in recent years. However, despite many efforts to improve SPAD's performance, the design of SPADs remained largely an iterative and time-consuming process where a designer makes educated guesses of a device structure based on empirical reasoning and solves the semicondu… ▽ More Single-photon avalanche detectors (SPADs) have enabled various applications in emerging photonic quantum information technologies in recent years. However, despite many efforts to improve SPAD's performance, the design of SPADs remained largely an iterative and time-consuming process where a designer makes educated guesses of a device structure based on empirical reasoning and solves the semiconductor drift-diffusion model for it. In contrast, the inverse problem, i.e., directly inferring a structure needed to achieve desired performance, which is of ultimate interest to designers, remains an unsolved problem. We propose a novel physics-aware inverse design workflow for SPADs using a deep learning model and demonstrate it with an example of finding the key parameters of semiconductor nanowires constituting the unit cell of an SPAD, given target photon detection efficiency. Our inverse design workflow is not restricted to the case demonstrated and can be applied to design conventional planar structure-based SPADs, photodetectors, and solar cells. △ Less

Submitted 26 February, 2025; originally announced February 2025.

Modulation of nanowire emitter arrays using micro-LED technology

Authors: Zhongyi Xia, Dimitars Jevtics, Benoit Guilhabert, Jonathan J. D. McKendry, Qian Gao, Hark Hoe Tan, Chennupati Jagadish, Martin D. Dawson, Michael J. Strain

Abstract: A scalable excitation platform for nanophotonic emitters using individually addressable micro-LED-on-CMOS arrays is demonstrated for the first time. Heterogeneous integration by transfer-printing of semiconductor nanowires was used for the deterministic assembly of the infrared emitters embedded in polymer optical waveguides with high yield and positional accuracy. Direct optical pumping of these… ▽ More A scalable excitation platform for nanophotonic emitters using individually addressable micro-LED-on-CMOS arrays is demonstrated for the first time. Heterogeneous integration by transfer-printing of semiconductor nanowires was used for the deterministic assembly of the infrared emitters embedded in polymer optical waveguides with high yield and positional accuracy. Direct optical pumping of these emitters is demonstrated using micro-LED pixels as source, with optical modulation (on-off keying) measured up to 150 MHz. A micro-LED-on-CMOS array of pump sources were employed to demonstrate individual control of multiple waveguide coupled nanowire emitters in parallel, paving the way for future large scale photonic integrated circuit applications. △ Less

Submitted 9 January, 2025; originally announced January 2025.

Accelerated Design of Microring Lasers with Multi-Objective Bayesian Optimization

Authors: Mihir R. Athavale, Ruqaiya Al-Abri, Stephen Church, Wei Wen Wong, Andre KY Low, Hark Hoe Tan, Kedar Hippalgaonkar, Patrick Parkinson

Abstract: On-chip coherent laser sources are crucial for the future of photonic integrated circuits, yet progress has been hindered by the complex interplay between material quality, device geometry, and performance metrics. We combine high-throughput characterization, statistical analysis, experimental design, and multi-objective Bayesian optimization to accelerate the design process for low-threshold, hig… ▽ More On-chip coherent laser sources are crucial for the future of photonic integrated circuits, yet progress has been hindered by the complex interplay between material quality, device geometry, and performance metrics. We combine high-throughput characterization, statistical analysis, experimental design, and multi-objective Bayesian optimization to accelerate the design process for low-threshold, high-yield III-V microring lasers with room-temperature operation at communication wavelengths. We demonstrate a 1.6$\times$ reduction in threshold over expert-designed configurations, achieving a 100% lasing yield that emits within the O-band with a median threshold as low as 33$μ$J cm$^{-2}$ pulse$^{-1}$. △ Less

Submitted 7 November, 2024; originally announced November 2024.

Violet to near-infrared optical addressing of spin pairs in hexagonal boron nitride

Authors: Priya Singh, Islay O. Robertson, Sam C. Scholten, Alexander J. Healey, Hiroshi Abe, Takeshi Ohshima, Hark Hoe Tan, Mehran Kianinia, Igor Aharonovich, David A. Broadway, Philipp Reineck, Jean-Philippe Tetienne

Abstract: Optically addressable solid-state spins are an important platform for practical quantum technologies. Van der Waals material hexagonal boron nitride (hBN) is a promising host as it contains a wide variety of optical emitters, but thus far observations of addressable spins have been sparse, and most of them lacked a demonstration of coherent spin control. Here we demonstrate robust optical readout… ▽ More Optically addressable solid-state spins are an important platform for practical quantum technologies. Van der Waals material hexagonal boron nitride (hBN) is a promising host as it contains a wide variety of optical emitters, but thus far observations of addressable spins have been sparse, and most of them lacked a demonstration of coherent spin control. Here we demonstrate robust optical readout of spin pairs in hBN with emission wavelengths spanning from violet to the near-infrared. We find these broadband spin pairs exist naturally in a variety of hBN samples from bulk crystals to powders to epitaxial films, and can be coherently controlled across the entire wavelength range. Furthermore, we identify the optimal wavelengths for independent readout of spin pairs and boron vacancy spin defects co-existing in the same sample. Our results establish the ubiquity of the optically addressable spin pair system in hBN across a broad parameter space, making it a versatile playground for spin-based quantum technologies. △ Less

Submitted 30 September, 2024; originally announced September 2024.

Generation of tunable quantum entanglement via nonlinearity symmetry breaking in semiconductor metasurfaces

Authors: Jinyong Ma, Tongmiao Fan, Tuomas Haggren, Laura Valencia Molina, Matthew Parry, Saniya Shinde, Jihua Zhang, Rocio Camacho Morales, Frank Setzpfandt, Hark Hoe Tan, Chennupati Jagadish, Dragomir N. Neshev, Andrey A. Sukhorukov

Abstract: Tunable biphoton quantum entanglement generated from nonlinear processes is highly desirable for cutting-edge quantum technologies, yet its tunability is substantially constrained by the symmetry of material nonlinear tensors. Here, we overcome this constraint by introducing symmetry-breaking in nonlinear polarization to generate optically tunable biphoton entanglement at picosecond speeds. Asymme… ▽ More Tunable biphoton quantum entanglement generated from nonlinear processes is highly desirable for cutting-edge quantum technologies, yet its tunability is substantially constrained by the symmetry of material nonlinear tensors. Here, we overcome this constraint by introducing symmetry-breaking in nonlinear polarization to generate optically tunable biphoton entanglement at picosecond speeds. Asymmetric optical responses have made breakthroughs in classical applications like non-reciprocal light transmission. We now experimentally demonstrate the nonlinear asymmetry response for biphoton entanglement using a semiconductor metasurface incorporating [110] InGaP nano-resonators with structural asymmetry. We realize continuous tuning of polarization entanglement from near-unentangled states to a Bell state. This tunability can also extend to produce tailored hyperentanglement. Furthermore, our nanoscale entanglement source features an ultra-high coincidence-to-accidental ratio of $\approx7\times10^4$, outperforming existing semiconductor flat optics by two orders of magnitude. Introducing asymmetric nonlinear response in quantum metasurfaces opens new directions for tailoring on-demand quantum states and beyond. △ Less

Submitted 16 September, 2024; originally announced September 2024.

Comments: 27 pages, 4 figures

A single spin in hexagonal boron nitride for vectorial quantum magnetometry

Authors: Carmem M. Gilardoni, Simone Eizagirre Barker, Catherine L. Curtin, Stephanie A. Fraser, Oliver. F. J. Powell, Dillon K. Lewis, Xiaoxi Deng, Andrew J. Ramsay, Chi Li, Igor Aharonovich, Hark Hoe Tan, Mete Atatüre, Hannah L. Stern

Abstract: Quantum sensing based on solid-state spin defects provides a uniquely versatile platform for imaging physical properties at the nanoscale under diverse environmental conditions. Operation of most sensors used to-date is based on projective measurement along a single axis combined with computational extrapolation. Here, we show that the individually addressable carbon-related spin defect in hexagon… ▽ More Quantum sensing based on solid-state spin defects provides a uniquely versatile platform for imaging physical properties at the nanoscale under diverse environmental conditions. Operation of most sensors used to-date is based on projective measurement along a single axis combined with computational extrapolation. Here, we show that the individually addressable carbon-related spin defect in hexagonal boron nitride is a multi-axis spin system for vectorial nanoscale magnetometry. We demonstrate how its low symmetry and strongly spin-selective direct and reverse intersystem crossing dynamics provide sub-$μ$T/$\sqrt{\text{Hz}}$ magnetic-field sensitivity for both on and off-axis bias magnetic field exceeding 50 mT. Alongside these features, the room-temperature operation and the nanometer-scale proximity enabled by the van der Waals host material further consolidate this system as an exciting quantum sensing platform. △ Less

Submitted 19 August, 2024; originally announced August 2024.

Data-driven Discovery for Robust Optimization of Semiconductor Nanowire Lasers

Authors: Stephen A Church, Francesco Vitale, Aswani Gopakumar, Nikita Gagrani, Yunyan Zhang, Nian Jiang, Hark Hoe Tan, Chennupati Jagadish, Huiyun Liu, Hannah Joyce, Carsten Ronning, Patrick Parkinson

Abstract: Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the p… ▽ More Active wavelength-scale optoelectronic components are widely used in photonic integrated circuitry, however coherent sources of light -- namely optical lasers -- remain the most challenging component to integrate. Semiconductor nanowire lasers represent a flexible class of light source where each nanowire is both gain material and cavity; however, strong coupling between these properties and the performance leads to inhomogeneity across the population. While this has been studied and optimized for individual material systems, no architecture-wide insight is available. Here, nine nanowire laser material systems are studied and compared using 55,516 nanowire lasers to provide statistically robust insight into performance. These results demonstrate that, while it may be important to optimise internal quantum efficiency for certain materials, cavity effects are always critical. Our study provides a roadmap to optimize the performance of nanowire lasers made from any material: this can be achieved by ensuring a narrow spread of lengths and end-facet reflectivities. △ Less

Submitted 20 September, 2024; v1 submitted 21 May, 2024; originally announced May 2024.

MR-MT3: Memory Retaining Multi-Track Music Transcription to Mitigate Instrument Leakage

Authors: Hao Hao Tan, Kin Wai Cheuk, Taemin Cho, Wei-Hsiang Liao, Yuki Mitsufuji

Abstract: This paper presents enhancements to the MT3 model, a state-of-the-art (SOTA) token-based multi-instrument automatic music transcription (AMT) model. Despite SOTA performance, MT3 has the issue of instrument leakage, where transcriptions are fragmented across different instruments. To mitigate this, we propose MR-MT3, with enhancements including a memory retention mechanism, prior token sampling, a… ▽ More This paper presents enhancements to the MT3 model, a state-of-the-art (SOTA) token-based multi-instrument automatic music transcription (AMT) model. Despite SOTA performance, MT3 has the issue of instrument leakage, where transcriptions are fragmented across different instruments. To mitigate this, we propose MR-MT3, with enhancements including a memory retention mechanism, prior token sampling, and token shuffling are proposed. These methods are evaluated on the Slakh2100 dataset, demonstrating improved onset F1 scores and reduced instrument leakage. In addition to the conventional multi-instrument transcription F1 score, new metrics such as the instrument leakage ratio and the instrument detection F1 score are introduced for a more comprehensive assessment of transcription quality. The study also explores the issue of domain overfitting by evaluating MT3 on single-instrument monophonic datasets such as ComMU and NSynth. The findings, along with the source code, are shared to facilitate future work aimed at refining token-based multi-instrument AMT models. △ Less

Submitted 15 March, 2024; originally announced March 2024.

Nanowire Array Breath Acetone Sensor for Diabetes Monitoring

Authors: Shiyu Wei, Zhe Li, Krishnan Murugappan, Ziyuan Li, Mykhaylo Lysevych, Kaushal Vora, Hark Hoe Tan, Chennupati Jagadish, Buddini I Karawdeniya, Christopher J Nolan, Antonio Tricoli, Lan Fu

Abstract: Diabetic ketoacidosis (DKA) is a life-threatening acute complication of diabetes in which ketone bodies accumulate in the blood. Breath acetone (a ketone) directly correlates with blood ketones, such that breath acetone monitoring could be used to improve safety in diabetes care. In this work, we report the design and fabrication of a chitosan/Pt/InP nanowire array based chemiresistive acetone sen… ▽ More Diabetic ketoacidosis (DKA) is a life-threatening acute complication of diabetes in which ketone bodies accumulate in the blood. Breath acetone (a ketone) directly correlates with blood ketones, such that breath acetone monitoring could be used to improve safety in diabetes care. In this work, we report the design and fabrication of a chitosan/Pt/InP nanowire array based chemiresistive acetone sensor. By implementing chitosan as a surface functionalization layer and a Pt Schottky contact for efficient charge transfer processes and photovoltaic effect, self-powered, highly selective acetone sensing has been achieved. This sensor has an ultra-wide detection range from sub-ppb to >100,000 ppm levels at room temperature, incorporating the range from healthy individuals (300-800 ppb) to those at high-risk of DKA (> 75 ppm). The nanowire sensor has been further integrated into a handheld breath testing prototype, the Ketowhistle, which can successfully detect different ranges of acetone concentrations in simulated breath. The Ketowhistle demonstrates immediate potential for non-invasive ketone testing and monitoring for persons living with diabetes, in particular for DKA prevention. △ Less

Submitted 1 December, 2023; originally announced December 2023.

An efficient modeling workflow for high-performance nanowire single-photon avalanche detector

Authors: Zhe Li, H. Hoe Tan, Chennupati Jagadish, Lan Fu

Abstract: Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consumi… ▽ More Single-photon detector (SPD), an essential building block of the quantum communication system, plays a fundamental role in developing next-generation quantum technologies. In this work, we propose an efficient modeling workflow of nanowire SPDs utilizing avalanche breakdown at reverse-biased conditions. The proposed workflow is explored to maximize computational efficiency and balance time-consuming drift-diffusion simulation with fast script-based post-processing. Without excessive computational effort, we could predict a suite of key device performance metrics, including breakdown voltage, dark/light avalanche built-up time, photon detection efficiency, dark count rate, and the deterministic part of timing jitter due to device structures. Implementing the proposed workflow onto a single InP nanowire and comparing it to the extensively studied planar devices and superconducting nanowire SPDs, we showed the great potential of nanowire avalanche SPD to outperform their planar counterparts and obtain as superior performance as superconducting nanowires, i.e., achieve a high photon detection efficiency of 70% with a dark count rate less than 20 Hz at non-cryogenic temperature. The proposed workflow is not limited to single-nanowire or nanowire-based device modeling and can be readily extended to more complicated two-/three dimensional structures. △ Less

Submitted 29 October, 2023; originally announced October 2023.

A quantum coherent spin in a two-dimensional material at room temperature

Authors: Hannah L. Stern, Carmem M. Gilardoni, Qiushi Gu, Simone Eizagirre Barker, Oliver Powell, Xiaoxi Deng, Louis Follet, Chi Li, Andrew Ramsay, Hark Hoe Tan, Igor Aharonovich, Mete Atatüre

Abstract: Quantum networks and sensing require solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration, ideally at ambient conditions. Despite rapid progress reported across several candidate systems, those possessing quantum coherent single spins at room temperature remain extremely rare. Here, we report quantum coherent contro… ▽ More Quantum networks and sensing require solid-state spin-photon interfaces that combine single-photon generation and long-lived spin coherence with scalable device integration, ideally at ambient conditions. Despite rapid progress reported across several candidate systems, those possessing quantum coherent single spins at room temperature remain extremely rare. Here, we report quantum coherent control under ambient conditions of a single-photon emitting defect spin in a a two-dimensional material, hexagonal boron nitride. We identify that the carbon-related defect has a spin-triplet electronic ground-state manifold. We demonstrate that the spin coherence is governed predominantly by coupling to only a few proximal nuclei and is prolonged by decoupling protocols. Our results allow for a room-temperature spin qubit coupled to a multi-qubit quantum register or quantum sensor with nanoscale sample proximity. △ Less

Submitted 22 June, 2023; originally announced June 2023.

Post-growth shaping and transport anisotropy in 2D InAs nanofins

Authors: J. Seidl, J. G. Gluschke, X. Yuan, H. H. Tan, C. Jagadish, P. Caroff, A. P. Micolich

Abstract: We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid based wet etch that enables complex shapes, e.g., van der Pauw cloverleaf structures, with patterning resolution down to 150 nm as well as partial thinning of the nanofin to improve the gate… ▽ More We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid based wet etch that enables complex shapes, e.g., van der Pauw cloverleaf structures, with patterning resolution down to 150 nm as well as partial thinning of the nanofin to improve the gate response. We exploit the high sensitivity of the cloverleaf structures to transport anisotropy to address the fundamental question of whether there is a measurable transport anisotropy arising from wurtzite/zincblende polytypism in 2D InAs nanostructures. We demonstrate a mobility anisotropy of order 2-4 at room temperature arising from polytypic stacking faults in our nanofins. Our work highlights a key materials consideration for devices featuring self-assembled 2D III-V nanostructures using advanced epitaxy methods. △ Less

Submitted 14 May, 2023; originally announced May 2023.

Journal ref: ACS Nano 15, 7226 (2021)

Pushing limits of photovoltaics and photodetection using radial junction nanowire devices

Authors: Vidur Raj, Yi Zhu, Kaushal Vora, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

Abstract: Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of doping and p-n junction formation in nanowire devices (along axial or radial axis) have significantly impeded their development. The problems are further amplified if a p-n junction has t… ▽ More Nanowire devices have long been proposed as an efficient alternative to their planar counterparts for different optoelectronic applications. Unfortunately, challenges related to the growth and characterization of doping and p-n junction formation in nanowire devices (along axial or radial axis) have significantly impeded their development. The problems are further amplified if a p-n junction has to be implemented radially. Therefore, even though radial junction devices are expected to be on par with their axial junction counterparts, there are minimal reports on high-performance radial junction nanowire optoelectronic devices. This paper summarizes our recent results on the simulation and fabrication of radial junction nanowire solar cells and photodetectors, which have shown unprecedented performance and clearly demonstrate the importance of radial junction for optoelectronic applications. Our simulation results show that the proposed radial junction device is both optically and electrically optimal for solar cell and photodetector applications, especially if the absorber quality is extremely low. The radial junction nanowire solar cells could achieve a 17.2% efficiency, whereas the unbiased radial junction photodetector could show sensitivity down to a single photon level using an absorber with a lifetime of less than 50 ps. In comparison, the axial junction planar device made using same substrate as absorber showed less than 1% solar cell efficiency and almost no photodetection at 0 V. This study is conclusive experimental proof of the superiority of radial junction nanowire devices over their thin film or axial junction counterparts, especially when absorber lifetime is extremely low. The proposed device holds huge promise for III-V based photovoltaics and photodetectors. △ Less

Submitted 20 January, 2023; originally announced January 2023.

Decoupling the Roles of Defects/Impurities and Wrinkles in Thermal Conductivity of Wafer-scale hBN Films

Authors: Kousik Bera, Dipankar Chugh, Aditya Bandopadhyay, Hark Hoe Tan, Anushree Roy, Chennupati Jagadish

Abstract: We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which in turn is used to estimate the rise… ▽ More We demonstrate a non-monotonic evolution of thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which in turn is used to estimate the rise in the temperature of the films under different laser powers. As the conventional Fourier law of heat diffusion cannot be directly employed analytically to evaluate the thermal conductivity of these films with defects and wrinkles, finite element modeling is used instead. In the model, average heat resistance is used to incorporate an overall defect structure, and Voronoi cells with contact resistance at the cell boundaries are constructed to mimic the wrinkled domains. The effective thermal conductivity is estimated to be 87, 55, and 117 W/m.K for the 2, 10, and 30 nm-thick films, respectively. We also present a quantitative estimation of the thermal resistance by defects and wrinkles individually to the heat flow. Our study reveals that the defects/impurities render a much higher resistance to heat transfer in the films than wrinkles. △ Less

Submitted 21 June, 2023; v1 submitted 16 November, 2022; originally announced November 2022.

Comments: 24 pages, 8 figures, minor changes

Nanoscale 3D tomography by in-flight fluorescence spectroscopy of atoms sputtered by a focused ion beam

Authors: Garrett Budnik, John Scott, Chengge Jiao, Mostafa Maazouz, Galen Gledhill, Lan Fu, Hark Hoe Tan, Milos Toth

Abstract: Nanoscale fabrication and characterisation techniques critically underpin a vast range of fields, including materials science, nanoelectronics and nanobiotechnology. Focused ion beam (FIB) techniques are particularly appealing due to their high spatial resolution and widespread use for processing of nanostructured materials and devices. Here, we introduce FIB-induced fluorescence spectroscopy (FIB… ▽ More Nanoscale fabrication and characterisation techniques critically underpin a vast range of fields, including materials science, nanoelectronics and nanobiotechnology. Focused ion beam (FIB) techniques are particularly appealing due to their high spatial resolution and widespread use for processing of nanostructured materials and devices. Here, we introduce FIB-induced fluorescence spectroscopy (FIB-FS) as a nanoscale technique for spectroscopic detection of atoms sputtered by an ion beam. We use semiconductor heterostructures to demonstrate nanoscale lateral and depth resolution and show that it is limited by ion-induced intermixing of nanostructured materials. Sensitivity is demonstrated qualitatively by depth-profiling of 3.5, 5 and 8 nm quantum wells, and quantitatively by detection of trace-level impurities present at parts-per-million levels. To showcase the utility of the FIB-FS technique, we use it to characterise quantum wells and Li-ion batteries. Our work introduces FIB-FS as a high-resolution, high sensitivity, 3D analysis and tomography technique that combines the versatility of FIB nanofabrication techniques with the power of diffraction-unlimited fluorescence spectroscopy. It is applicable to all elements in the periodic table, and enables real-time analysis during direct-write nanofabrication by focused ion beams. △ Less

Submitted 21 June, 2022; originally announced June 2022.

Semi-supervised music emotion recognition using noisy student training and harmonic pitch class profiles

Authors: Hao Hao Tan

Abstract: We present Mirable's submission to the 2021 Emotions and Themes in Music challenge. In this work, we intend to address the question: can we leverage semi-supervised learning techniques on music emotion recognition? With that, we experiment with noisy student training, which has improved model performance in the image classification domain. As the noisy student method requires a strong teacher mode… ▽ More We present Mirable's submission to the 2021 Emotions and Themes in Music challenge. In this work, we intend to address the question: can we leverage semi-supervised learning techniques on music emotion recognition? With that, we experiment with noisy student training, which has improved model performance in the image classification domain. As the noisy student method requires a strong teacher model, we further delve into the factors including (i) input training length and (ii) complementary music representations to further boost the performance of the teacher model. For (i), we find that models trained with short input length perform better in PR-AUC, whereas those trained with long input length perform better in ROC-AUC. For (ii), we find that using harmonic pitch class profiles (HPCP) consistently improve tagging performance, which suggests that harmonic representation is useful for music emotion tagging. Finally, we find that noisy student method only improves tagging results for the case of long training length. Additionally, we find that ensembling representations trained with different training lengths can improve tagging results significantly, which suggest a possible direction to explore incorporating multiple temporal resolutions in the network architecture for future work. △ Less

Submitted 9 December, 2021; v1 submitted 1 December, 2021; originally announced December 2021.

Comments: MediaEval 2021 submission for Emotion and Themes in Music

Self-powered InP Nanowire Photodetector for Single Photon Level Detection at Room Temperature

Authors: Yi Zhu, Vidur Raj, Ziyuan Li, Hark Hoe Tan, Chennupati Jagadish, Lan Fu

Abstract: Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations fo… ▽ More Highly sensitive photodetectors with single photon level detection is one of the key components to a range of emerging technologies, in particular the ever-growing field of optical communication, remote sensing, and quantum computing. Currently, most of the single-photon detection technologies require external biasing at high voltages and/or cooling to low temperatures, posing great limitations for wider applications. Here, we demonstrate InP nanowire array photodetectors that can achieve single-photon level light detection at room temperature without an external bias. We use top-down etched, heavily doped p-type InP nanowires and n-type AZO/ZnO carrier selective contact to form a radial p-n junction with a built-in electric field exceeding 3x10^5 V/cm at 0 V. The device exhibits broadband light sensitivity and can distinguish a single photon per pulse from the dark noise at 0 V, enabled by its design to realize near-ideal broadband absorption, extremely low dark current, and highly efficient charge carrier separation. Meanwhile, the bandwidth of the device reaches above 600 MHz with a timing jitter of 538 ps. The proposed device design provides a new pathway towards low-cost, high-sensitivity, self-powered photodetectors for numerous future applications. △ Less

Submitted 15 September, 2021; originally announced September 2021.

Ultralow Threshold, Single-Mode InGaAs/GaAs Multi-Quantum Disk Nanowire Lasers

Authors: Xutao Zhang, Ruixuan Yi, Nikita Gagrani, Ziyuan Li, Fanlu Zhang, Xuetao Gan, Xiaomei Yao, Xiaoming Yuan, Naiyin Wang, Jianlin Zhao, Pingping Chen, Wei Lu, Lan Fu, Hark Hoe Tan, Chennupati Jagadish

Abstract: We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs mul… ▽ More We present single-mode nanowire (NW) lasers with ultralow threshold in the near-infrared spectral range. To ensure the single-mode operation, the NW diameter and length are reduced specifically to minimize the longitudinal and transverse modes of the NW cavity. Increased optical losses and reduced gain volume by the dimension reduction are compensated by excellent NW morphology and InGaAs/GaAs multi-quantum disks. At 5 K, a threshold low as 1.6 μJ/cm2 per pulse is achieved with a resulting quality factor exceeding 6400. By further passivating the NW with an AlGaAs shell to suppress surface non-radiative recombination, single-mode lasing operation is obtained with a threshold of only 48 μJ/cm2 per pulse at room temperature with a high characteristic temperature of 223 K and power output of ~ 0.9 μW. These single-mode, ultralow threshold, high power output NW lasers are promising for the development of near-infrared nanoscale coherent light sources for integrated photonic circuits, sensing, and spectroscopy. △ Less

Submitted 26 May, 2021; originally announced May 2021.

Journal ref: ACS Nano, 2021, 5, 5, 9126-9133

Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride

Authors: Hannah L. Stern, John Jarman, Qiushi Gu, Simone Eizagirre Barker, Noah Mendelson, Dipankar Chugh, Sam Schott, Hoe H. Tan, Henning Sirringhaus, Igor Aharonovich, Mete Atatüre

Abstract: Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from pre… ▽ More Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Axial vs. Radial Junction Nanowire Solar Cell

Authors: Vidur Raj, Hark Hoe Tan, Chennupati Jagadish

Abstract: Both axial and radial junction nanowire solar cells have their challenges and advantages. However, so far, there is no review that explicitly provides a detailed comparative analysis of both axial and radial junction solar cells. This article reviews some of the recent results on axial and radial junction nanowire solar cells with an attempt to perform a comparative study between the optical and d… ▽ More Both axial and radial junction nanowire solar cells have their challenges and advantages. However, so far, there is no review that explicitly provides a detailed comparative analysis of both axial and radial junction solar cells. This article reviews some of the recent results on axial and radial junction nanowire solar cells with an attempt to perform a comparative study between the optical and device behavior of these cells. In particular, we start by reviewing different results on how the absorption can be tuned in axial and radial junction solar cells. We also discuss results on some of the critical device concepts that are required to achieve high efficiency in axial and radial junction solar cells. We include a section on new device concepts that can be realized in nanowire structures. Finally, we conclude this review by discussing a few of the standing challenges of nanowire solar cells. △ Less

Submitted 24 March, 2021; originally announced March 2021.

Comments: It is a comparative review on axial vs. radial junction solar cell

Infrared up-conversion imaging in nonlinear metasurfaces

Authors: Rocio Camacho-Morales, Davide Rocco, Lei Xu, Valerio Flavio Gili, Nikolay Dimitrov, Lyubomir Stoyanov, Zhonghua Ma, Andrei Komar, Mykhaylo Lysevych, Fouad Karouta, Alexander Dreischuh, Hark Hoe Tan, Giuseppe Leo, Costantino De Angelis, Chennupati Jagadish, Andrey E. Miroshnichenko, Mohsen Rahmani, Dragomir N. Neshev

Abstract: Infrared imaging is a crucial technique in a multitude of applications, including night vision, autonomous vehicles navigation, optical tomography, and food quality control. Conventional infrared imaging technologies, however, require the use of materials like narrow-band gap semiconductors which are sensitive to thermal noise and often require cryogenic cooling. Here, we demonstrate a compact all… ▽ More Infrared imaging is a crucial technique in a multitude of applications, including night vision, autonomous vehicles navigation, optical tomography, and food quality control. Conventional infrared imaging technologies, however, require the use of materials like narrow-band gap semiconductors which are sensitive to thermal noise and often require cryogenic cooling. Here, we demonstrate a compact all-optical alternative to perform infrared imaging in a metasurface composed of GaAs semiconductor nanoantennas, using a nonlinear wave-mixing process. We experimentally show the up-conversion of short-wave infrared wavelengths via the coherent parametric process of sum-frequency generation. In this process, an infrared image of a target is mixed inside the metasurface with a strong pump beam, translating the image from infrared to the visible in a nanoscale ultra-thin imaging device. Our results open up new opportunities for the development of compact infrared imaging devices with applications in infrared vision and life sciences. △ Less

Submitted 5 January, 2021; originally announced January 2021.

Comments: 32 pages, 13 figures

Impact of invasive metal probes on Hall measurements in semiconductor nanostructures

Authors: J. G. Gluschke, J. Seidl, H. H. Tan, C. Jagadish, P. Caroff, A. P. Micolich

Abstract: Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that deviate significantly from the ideal of elongated Hall bars with currentless contacts. Many devices using these new materials have a low aspect ratio a… ▽ More Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that deviate significantly from the ideal of elongated Hall bars with currentless contacts. Many devices using these new materials have a low aspect ratio and feature metal Hall probes that overlap with the semiconductor channel. This can lead to a significant distortion of the current flow. We present experimental data from InAs 2D nanofin devices with different Hall probe geometries to study the influence of Hall probe length and width. We use finite-element simulations to further understand the implications of these aspects and expand the scope to contact resistance and sample aspect ratios. Our key finding is that invasive probes lead to a significant underestimation in the measured Hall voltage, typically of the order of 40-80%. This in turn leads to a subsequent proportional overestimation of carrier concentration and an underestimation of mobility △ Less

Submitted 19 October, 2020; originally announced October 2020.

Comments: 8 pages, 7 figures

Journal ref: Nanoscale 12, 20317-20325 (2020)

Music FaderNets: Controllable Music Generation Based On High-Level Features via Low-Level Feature Modelling

Authors: Hao Hao Tan, Dorien Herremans

Abstract: High-level musical qualities (such as emotion) are often abstract, subjective, and hard to quantify. Given these difficulties, it is not easy to learn good feature representations with supervised learning techniques, either because of the insufficiency of labels, or the subjectiveness (and hence large variance) in human-annotated labels. In this paper, we present a framework that can learn high-le… ▽ More High-level musical qualities (such as emotion) are often abstract, subjective, and hard to quantify. Given these difficulties, it is not easy to learn good feature representations with supervised learning techniques, either because of the insufficiency of labels, or the subjectiveness (and hence large variance) in human-annotated labels. In this paper, we present a framework that can learn high-level feature representations with a limited amount of data, by first modelling their corresponding quantifiable low-level attributes. We refer to our proposed framework as Music FaderNets, which is inspired by the fact that low-level attributes can be continuously manipulated by separate "sliding faders" through feature disentanglement and latent regularization techniques. High-level features are then inferred from the low-level representations through semi-supervised clustering using Gaussian Mixture Variational Autoencoders (GM-VAEs). Using arousal as an example of a high-level feature, we show that the "faders" of our model are disentangled and change linearly w.r.t. the modelled low-level attributes of the generated output music. Furthermore, we demonstrate that the model successfully learns the intrinsic relationship between arousal and its corresponding low-level attributes (rhythm and note density), with only 1% of the training set being labelled. Finally, using the learnt high-level feature representations, we explore the application of our framework in style transfer tasks across different arousal states. The effectiveness of this approach is verified through a subjective listening test. △ Less

Submitted 29 July, 2020; originally announced July 2020.

Journal ref: Proc. of 21st International Society of Music Information Retrieval Conference, ISMIR 2020

Generative Modelling for Controllable Audio Synthesis of Expressive Piano Performance

Authors: Hao Hao Tan, Yin-Jyun Luo, Dorien Herremans

Abstract: We present a controllable neural audio synthesizer based on Gaussian Mixture Variational Autoencoders (GM-VAE), which can generate realistic piano performances in the audio domain that closely follows temporal conditions of two essential style features for piano performances: articulation and dynamics. We demonstrate how the model is able to apply fine-grained style morphing over the course of syn… ▽ More We present a controllable neural audio synthesizer based on Gaussian Mixture Variational Autoencoders (GM-VAE), which can generate realistic piano performances in the audio domain that closely follows temporal conditions of two essential style features for piano performances: articulation and dynamics. We demonstrate how the model is able to apply fine-grained style morphing over the course of synthesizing the audio. This is based on conditions which are latent variables that can be sampled from the prior or inferred from other pieces. One of the envisioned use cases is to inspire creative and brand new interpretations for existing pieces of piano music. △ Less

Submitted 12 July, 2020; v1 submitted 16 June, 2020; originally announced June 2020.

Journal ref: Published at ICML Workshop on Machine Learning for Media Discovery Workshop (ML4MD) 2020

Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride

Authors: Noah Mendelson, Dipankar Chugh, Jeffrey R. Reimers, Tin S. Cheng, Andreas Gottscholl, Hu Long, Christopher J. Mellor, Alex Zettl, Vladimir Dyakonov, Peter H. Beton, Sergei V. Novikov, Chennupati Jagadish, Hark Hoe Tan, Michael J. Ford, Milos Toth, Carlo Bradac, Igor Aharonovich

Abstract: Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by… ▽ More Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices. △ Less

Submitted 20 April, 2020; v1 submitted 2 March, 2020; originally announced March 2020.

Characterisation, Selection and Micro-Assembly of Nanowire Laser Systems

Authors: Dimitars Jevtics, John McPhillimy, Benoit Guilhabert, Juan A. Alanis, Hark Hoe Tan, Chennupati Jagadish, Martin D. Dawson, Antonio Hurtado, Patrick Parkinson, Michael J. Strain

Abstract: Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complement… ▽ More Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complementary, high-throughput techniques are combined: the characterisation of nanowire laser populations using automated optical microscopy, and a high accuracy transfer printing process with automatic device spatial registration and transfer. In this work a population of NW lasers is characterised, binned by threshold energy density and subsequently printed in arrays onto a secondary substrate. Statistical analysis of the transferred and control devices show that the transfer process does not incur measurable laser damage and the threshold binning can be maintained. Analysis is provided on the threshold and mode spectra of the device populations to investigate the potential for using NW lasers for integrated systems fabrication. △ Less

Submitted 7 January, 2020; originally announced January 2020.

Comments: 18 pages, 7 figures

Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy

Authors: Seyyedesadaf Pournia, Samuel Linser, Giriraj Jnawali, Howard E. Jackson, Leigh M. Smith, Amira Ameruddin, Philippe Caroff, Jennifer Wong-Leung, Hark Hoe Tan, Chennupati Jagadish, Hannah J. Joyce

Abstract: We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with phot… ▽ More We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is essential to the development of crystal phase engineering of this important III-V semiconductor. △ Less

Submitted 18 February, 2020; v1 submitted 16 September, 2019; originally announced September 2019.

Comments: 25 pages, 5 figures

Journal ref: Nano Research 2020

Mechanical behavior of InP twinning superlattice nanowires

Authors: Z. Liu, I. Papadimitriou, M. Castillo-Rodríguez, C. Wang, G. Esteban-Manzanares, X. Yuan, H. H. Tan, J. M. Molina-Aldareguía, J. LLorca

Abstract: Taper-free InP twinning superlattice (TSL) nanowires with an average twin spacing of ~ 13 nm were grown along the zinc-blende close-packed [111] direction using metalorganic vapor phase epitaxy. The mechanical properties and fracture mechanisms of individual InP TSL nanowires in tension were ascertained by means of in situ uniaxial tensile tests in a transmission electron microscope. The elastic m… ▽ More Taper-free InP twinning superlattice (TSL) nanowires with an average twin spacing of ~ 13 nm were grown along the zinc-blende close-packed [111] direction using metalorganic vapor phase epitaxy. The mechanical properties and fracture mechanisms of individual InP TSL nanowires in tension were ascertained by means of in situ uniaxial tensile tests in a transmission electron microscope. The elastic modulus, failure strain and tensile strength along the [111] direction were determined. No evidence of inelastic deformation mechanisms was found before fracture, which took place in a brittle manner along the twin boundary. The experimental results were supported by molecular dynamics simulations of the tensile deformation of the nanowires that also showed that the fracture of twinned nanowires occurred in the absence of inelastic deformation mechanisms by the propagation of a crack from the nanowire surface along the twin boundary. △ Less

Submitted 29 August, 2019; originally announced August 2019.

Journal ref: Nano Letters, 19, 4490-4497, 2019

Strain distribution and thermal strain relaxation in MOVPE grown hBN films on sapphire substrates

Authors: Kousik Bera, D. Chugh, Atanu Patra, H. Hoe Tan, C. Jagadish Anushree Roy

Abstract: Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these films of relatively large size are potential candidates to be employed in designing real devices, they ex… ▽ More Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these films of relatively large size are potential candidates to be employed in designing real devices, they exhibit wrinkling. The formation of wrinkles is a key signature of strain distribution in a film. Raman imaging has been utilized to study the residual strain distribution in these wrinkled hBN films. An increase in the overall compressive strain in the films with an increase in the layer thickness has been observed. To find whether the residual lattice strain in the films can be removed by a thermal treatment, temperature dependent Raman measurements of these films are carried out. The study demonstrates that the thermal rate of strain evolution is higher in the films of lower thickness than in the thicker films. This observation further provides a possible explanation for the variation of strain in the as-grown films. An empirical relation has been proposed for estimating the residual strain from the morphology of the films. We have also shown that the residual strain can be partially released by the delamination of the films. △ Less

Submitted 12 July, 2019; originally announced July 2019.

Comments: 27 pages, 10 figures

Regaining a spatial dimension: Mechanically transferrable two-dimensional InAs nanofins grown by selective area epitaxy

Authors: J. Seidl, J. G. Gluschke, X. Yuan, S. Naureen, N. Shahid, H. H. Tan, C. Jagadish, A. P. Micolich, P. Caroff

Abstract: We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growt… ▽ More We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and four-terminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density $2.5~-~5 \times 10^{17}$ cm$^{-3}$, corresponding to an approximate surface accumulation layer density $3~-~6 \times 10^{12}$ cm$^{-2}$ that agrees well with previous studies of InAs nanowires. We obtain Hall mobilities as high as $1200$ cm$^{2}$/Vs, field-effect mobilities as high as $4400$ cm$^{2}$/Vs and clear quantum interference structure at temperatures as high as $20$ K. Our devices show excellent prospects for fabrication into more complicated devices featuring multiple ohmic contacts, local gates and possibly other functional elements, e.g., patterned superconductor contacts, that may make them attractive options for future quantum information applications. △ Less

Submitted 28 June, 2019; originally announced July 2019.

Comments: 36 pages, 5 figures, in press for Nano Letters

Agent Madoff: A Heuristic-Based Negotiation Agent For The Diplomacy Strategy Game

Authors: Hao Hao Tan

Abstract: In this paper, we present the strategy of Agent Madoff, which is a heuristic-based negotiation agent that won 2nd place at the Automated Negotiating Agents Competition (ANAC 2017). Agent Madoff is implemented to play the game Diplomacy, which is a strategic board game that mimics the situation during World War I. Each player represents a major European power which has to negotiate with other force… ▽ More In this paper, we present the strategy of Agent Madoff, which is a heuristic-based negotiation agent that won 2nd place at the Automated Negotiating Agents Competition (ANAC 2017). Agent Madoff is implemented to play the game Diplomacy, which is a strategic board game that mimics the situation during World War I. Each player represents a major European power which has to negotiate with other forces and win possession of a majority supply centers on the map. We propose a design architecture which consists of 3 components: heuristic module, acceptance strategy and bidding strategy. The heuristic module, responsible for evaluating which regions on the graph are more worthy, considers the type of region and the number of supply centers adjacent to the region and return a utility value for each region on the map. The acceptance strategy is done on a case-by-case basis according to the type of the order by calculating the acceptance probability using a composite function. The bidding strategy adopts a defensive approach aimed to neutralize attacks and resolve conflict moves with other players to minimize our loss on supply centers. △ Less

Submitted 19 February, 2019; originally announced February 2019.

Unusual spin properties of InP wurtzite nanowires revealed by Zeeman splitting spectroscopy

Authors: D. Tedeschi, M. De Luca, P. E. Faria Junior, A. Granados del Águila, Q. Gao, H. H. Tan, B. Scharf, P. C. M. Christianen, C. Jagadish, J. Fabian, A. Polimeni

Abstract: In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field… ▽ More In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy using magnetic fields up to 29 T. We found that $g_{exc}$ is strongly anisotropic with values differing in excess of 50\% between the magnetic field oriented parallel and perpendicular to the nanowire long axis. Furthermore, for magnetic fields oriented along the nanowire axis, $g_{exc}$ is nearly three times larger than in bulk zincblende InP and it shows a marked sublinear dependence on the magnetic field, a common feature to other non-nitride III-V wurtzite nanowires but not properly understood. Remarkably, this nonlinearity originates from only one Zeeman branch characterized by a specific type of light polarization. All the experimental findings are modeled theoretically by a robust approach combining the $k \cdot p$ method with the envelope function approximation and including the electron-hole interaction. We revealed that the nonlinear features arise due to the coupling between Landau levels pertaining to the A (heavy-hole like) and B (light-hole like) valence bands of the wurtzite crystal structure. This general behavior is particularly relevant for the understanding of the spin properties of several wurtzite nanowires that host the set for the observation of topological phases potentially at the base of quantum computing platforms. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. B 99, 161204 (2019)

Strong Hot Carrier Effects Observed in a Single Nanowire Heterostructure

Authors: Iraj Abbasian Shojaei, Samuel Linser, Giriraj Jnawali, N. Wickramasuriya, Howard E. Jackson, Leigh M. Smith, Fariborz Kargar, Alexander A. Balandin, Xiaoming Yuan, Philip Caroff, H. Hoe Tan, Chennupati Jagadish

Abstract: We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatu… ▽ More We use Transient Rayleigh Scattering to study the thermalization of hot photoexcited carriers in single GaAsSb/InP nanowire heterostructures. By comparing the energy loss rate in single bare GaAsSb nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the LO phonon emission rate at low temperatures leading to strong hot carrier effects. △ Less

Submitted 16 September, 2019; v1 submitted 29 October, 2018; originally announced October 2018.

Comments: 17 pages, 5 figures

Journal ref: Nano Letters 19, 5062-5069 (2019)

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

Authors: A. R. Ullah, H. J. Joyce, H. H. Tan, C. Jagadish, A. P. Micolich

Abstract: We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by… ▽ More We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires. △ Less

Submitted 1 October, 2017; v1 submitted 14 June, 2017; originally announced June 2017.

Comments: Accepted for publication in Nanotechnology

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry

Authors: D. J. Carrad, A. B. Mostert, A. R. Ullah, A. M. Burke, H. J. Joyce, H. H. Tan, C. Jagadish, P. Krogstrup, J. Nygård, P. Meredith, A. P. Micolich

Abstract: A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic poly… ▽ More A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best supported by very different materials types -- electronic signals in inorganic semiconductors and ionic/protonic signals in organic or bio-organic polymers, gels or electrolytes. Here we demonstrate a new class of organic-inorganic transducing interface featuring semiconducting nanowires electrostatically gated using a solid proton-transporting hygroscopic polymer. This model platform allows us to study the basic transducing mechanisms as well as deliver high fidelity signal conversion by tapping into and drawing together the best candidates from traditionally disparate realms of electronic materials research. By combining complementary n- and p-type transducers we demonstrate functional logic with significant potential for scaling towards high-density integrated bioelectronic circuitry. △ Less

Submitted 29 April, 2017; originally announced May 2017.

Journal ref: Nano Letters 17, 827-833 (2017)

Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy

Authors: Bin Chen, Xuewen Fu, Jau Tang, Mykhaylo Lysevych, Hark Hoe Tan, Chennupati Jagadish, Ahmed H. Zewail

Abstract: Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the ph… ▽ More Eutectic related reaction is a special chemical/physical reaction involving multiple phases, solid and liquid. Visualization of phase reaction of composite nanomaterials with high spatial and temporal resolution provides a key understanding of alloy growth with important industrial applications. However, it has been a rather challenging task. Here we report the direct imaging and control of the phase reaction dynamics of a single, as-grown free-standing gallium arsenide nanowire encapped with a gold nanoparticle, free from environmental confinement or disturbance, using four-dimensional electron microscopy. The non-destructive preparation of as-grown free-standing nanowires without supporting films allows us to study their anisotropic properties in their native environment with better statistical character. A laser heating pulse initiates the eutectic related reaction at a temperature much lower than the melting points of the composite materials, followed by a precisely time-delayed electron pulse to visualize the irreversible transient states of nucleation, growth and solidification of the complex. Combined with theoretical modeling, useful thermodynamic parameters of the newly formed alloy phases and their crystal structures could be determined. This technique of dynamical control and 4D imaging of phase reaction processes on the nanometer-ultrafast time scale open new venues for engineering various reactions in a wide variety of other systems. △ Less

Submitted 25 June, 2017; v1 submitted 19 January, 2017; originally announced January 2017.

Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires

Authors: Wen Jun Toe, Ignacio O. Piwonka, Christopher Angstmann, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish, Bruce Henry, Peter J. Reece

Abstract: We investigate the dynamics of high aspect ratio nanowires trapped axially in a single gradient force optical tweezers. A power spectrum analysis of the Brownian dynamics reveals a broad spectral resonance of the order of a kHz with peak properties that are strongly dependent on the input trapping power. Modelling of the dynamical equations of motion of the trapped nanowire that incorporate non-co… ▽ More We investigate the dynamics of high aspect ratio nanowires trapped axially in a single gradient force optical tweezers. A power spectrum analysis of the Brownian dynamics reveals a broad spectral resonance of the order of a kHz with peak properties that are strongly dependent on the input trapping power. Modelling of the dynamical equations of motion of the trapped nanowire that incorporate non-conservative effects through asymmetric coupling between translational and rotational degrees of freedom provides excellent agreement with the experimental observations. An associated observation of persistent cyclical motion around the equilibrium trapping position using winding analysis provides further evidence for the influence of non-conservative forces. △ Less

Submitted 12 August, 2015; originally announced August 2015.

Carrier thermalization dynamics in single Zincblende and Wurtzite InP nanowires

Authors: Yuda Wang, Howard E. Jackson, Leigh M. Smith, Tim Burgess, Suriati Paiman, Qiang Gao, Hark Hoe Tan, Chennupati Jagadish

Abstract: Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band to band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurem… ▽ More Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band to band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs. InP NW) and less strongly on crystal structure (ZB vs. WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NW reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures which lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices. △ Less

Submitted 30 October, 2014; originally announced October 2014.

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

Authors: D. J. Carrad, A. M. Burke, R. W. Lyttleton, H. J. Joyce, H. H. Tan, C. Jagadish, K. Storm, H. Linke, L. Samuelson, A. P. Micolich

Abstract: We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces… ▽ More We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices. △ Less

Submitted 7 April, 2014; originally announced April 2014.

Comments: 20 pages, 4 figures. Supplementary information available at Nano Letters or by contact with APM

Journal ref: Nano Letters 14, 94 (2014)

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors

Authors: A. R. Ullah, H. J. Joyce, A. M. Burke, H. H. Tan, C. Jagadish, A. P. Micolich

Abstract: We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility versus temperature for these devices to better understand how differences in InAs phase govern the electronic properties of nanowire transistors. △ Less

Submitted 18 June, 2013; originally announced June 2013.

Comments: Submitted to Physica Status Solidi - Rapid Research Letters Focus Issue on Semiconductor Nanowires

Co-development of significant elastic and reversible plastic deformation in nanowires

Authors: Peite Bao, Yanbo Wang, Xiangyuan Cui, Qiang Gao, Hongwei Liu, Wai Kong Yeoh, Hung-Wei Yen, Xiaozhou Liao, Sichao Du, H. Hoe Tan, Chennupati Jagadish, Jin Zou, Simon P. Ringer, Rongkun Zheng

Abstract: When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deforma… ▽ More When a material is subjected to an applied stress, the material will experience recoverable elastic deformation followed by permanent plastic deformation at the point when the applied stress exceeds the yield stress of the material. Microscopically, the onset of the plasticity usually indicates the activation of dislocation motion, which is considered to be the primary mechanism of plastic deformation. Once plastic deformation is initiated, further elastic deformation is negligible owing to the limited increase in the flow stress caused by work hardening. Here we present experimental evidence and quantitative analysis of simultaneous development of significant elastic deformation and dislocation-based plastic deformation in single crystal GaAs nanowires (NWs) under bending deformation up to a total strain of ~ 6%. The observation is in sharp contrast to the previous notions regarding the deformation modes. Most of the plastic deformation recovers spontaneously when the external stress is released, and therefore resembles an elastic deformation process. △ Less

Submitted 12 March, 2013; originally announced March 2013.

Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

Authors: Laurens H. Willems van Beveren, Jeffrey C. McCallum, Hoe H. Tan, Chennupati Jagadish

Abstract: In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diod… ▽ More In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization. △ Less

Submitted 11 March, 2013; originally announced March 2013.

Comments: 2 pages Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Authors: A. M. Burke, D. Waddington, D. Carrad, R. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of… ▽ More Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-doping layer with deep-trapping centers (e.g., by co-doping with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states. △ Less

Submitted 15 September, 2012; v1 submitted 12 July, 2012; originally announced July 2012.

Comments: 15 pages, 11 figures; Accepted for Physical Review B

Spin Selective Purcell Effect in a Quantum Dot Microcavity System

Authors: Qijun Ren, Jian Lu, H. H. Tan, Shan Wu, Liaoxin Sun, Weihang Zhou, Wei Xie, Zheng Sun, Yongyuan Zhu, C. Jagadish, S. C. Shen, Zhanghai Chen

Abstract: We demonstrate the selective coupling of a single quantum dot exciton spin state with the cavity mode in a quantum dot-micropillar cavity system. By tuning an external magnetic field, the Zeeman splitted exciton spin states coupled differently with the cavity due to field manipulated energy detuning. We found a 26 times increase in the emission intensity of spin-up exciton state with respect to sp… ▽ More We demonstrate the selective coupling of a single quantum dot exciton spin state with the cavity mode in a quantum dot-micropillar cavity system. By tuning an external magnetic field, the Zeeman splitted exciton spin states coupled differently with the cavity due to field manipulated energy detuning. We found a 26 times increase in the emission intensity of spin-up exciton state with respect to spin-down exciton state at resonance due to Purcell effect, which gives rise to the selective enhancement of light emission with the circular polarization degree up to 93%. A four-level rate equation model is developed and quantitatively agrees well with our experimental data. Our results pave the way for the realization of future quantum light sources and the quantum information processing applications. △ Less

Submitted 5 October, 2011; v1 submitted 5 August, 2010; originally announced August 2010.

Comments: 11 pages, 4 figures

Extraordinary transmission of nanohole lattices in gold films

Authors: Alexander Minovich, Haroldo T. Hattori, Ian McKerracher, Hark Hoe Tan, Dragomir N. Neshev, Chennupati Jagadish, Yuri S. Kivshar

Abstract: We study experimentally the transmission of light through a square lattice of nanoholes perforated in a optically-thick gold film. We observe that the periodicity of the structure enhances the light transmission for specific wavelengths, and we analyze this effect theoretically by employing finite-difference time-domain numerical simulations. Furthermore, we investigate the possibilities for man… ▽ More We study experimentally the transmission of light through a square lattice of nanoholes perforated in a optically-thick gold film. We observe that the periodicity of the structure enhances the light transmission for specific wavelengths, and we analyze this effect theoretically by employing finite-difference time-domain numerical simulations. Furthermore, we investigate the possibilities for manipulation of the spectral transmission in quasi-periodic and chirped lattices consisting of square nanoholes with varying hole size or lattice periodicity. △ Less

Submitted 2 July, 2008; originally announced July 2008.

Comments: 6 pages, 8 figures

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

Authors: J. Lloyd-Hughes, S. K. E. Merchant, F. Lan, H. H. Tan, C. Jagadish, E. Castro-Camus, M. B. Johnston

Abstract: The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoe… ▽ More The carrier dynamics of photoexcited electrons in the vicinity of the surface of (NH4)2S-passivated GaAs were studied via terahertz (THz) emission spectroscopy and optical-pump THz-probe spectroscopy. THz emission spectroscopy measurements, coupled with Monte Carlo simulations of THz emission, revealed that the surface electric field of GaAs reverses after passivation. The conductivity of photoexcited electrons was determined via optical-pump THz-probe spectroscopy, and was found to double after passivation. These experiments demonstrate that passivation significantly reduces the surface state density and surface recombination velocity of GaAs. Finally, we have demonstrated that passivation leads to an enhancement in the power radiated by photoconductive switch THz emitters, thereby showing the important influence of surface chemistry on the performance of ultrafast THz photonic devices. △ Less

Submitted 20 October, 2006; originally announced October 2006.

Comments: 4 pages, 3 figures, to appear in Applied Physics Letters

Detecting the full polarisation state of terahertz transients

Authors: E. Castro-Camus, J. Lloyd-Hughes, M. D. Fraser, H. H. Tan, C. Jagadish, M. B. Johnston

Abstract: We have developed a detector which records the full polarisation state of a terahertz (THz) pulse propagating in free space. The three-electrode photoconductive receiver simultaneously records the electric field of an electromagnetic pulse in two orthogonal directions as a function of time. A prototype device fabricated on Fe+ ion implanted InP exhibited a cross polarised extinction ratio better… ▽ More We have developed a detector which records the full polarisation state of a terahertz (THz) pulse propagating in free space. The three-electrode photoconductive receiver simultaneously records the electric field of an electromagnetic pulse in two orthogonal directions as a function of time. A prototype device fabricated on Fe+ ion implanted InP exhibited a cross polarised extinction ratio better than 390:1. The design and optimisation of this device are discussed along with its significance for the development of new forms of polarisation sensitive time domain spectroscopy, including THz circular dichroism spectroscopy. △ Less

Submitted 14 March, 2006; originally announced March 2006.

Comments: 7 pages, 6 figures, conference

Journal ref: Proc. of SPIE Vol. 6120, 61200Q, (2005)

Polarisation-Sensitive THz Detectors

Authors: M. B. Johnston, E. Castro-Camus, J. Lloyd-Hughes, M. D. Fraser, H. H. Tan, C. Jagadish

Abstract: We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is three-contact photoconductive receiver, which is capable of recording two time-varying electric field components of a THz pulse simultaneously. Our receiver was fabricated on Fe+ implanted InP and showed a cross-polarised extinction ratio greater than… ▽ More We have developed a detector of coherent terahertz (THz) radiation that can recover the full polarisation state of a THz transient. The device is three-contact photoconductive receiver, which is capable of recording two time-varying electric field components of a THz pulse simultaneously. Our receiver was fabricated on Fe+ implanted InP and showed a cross-polarised extinction ratio greater than 100:1. The detector will be useful for spectroscopy of birefringent and optically active materials. △ Less

Submitted 9 February, 2006; originally announced February 2006.

Comments: 2 pages, 3 figures, conference abstract

Photoconductive detection of arbitrary polarised terahertz pulses

Authors: E. Castro-Camus, J. Lloyd-Hughes, M. B. Johnston, M. D. Fraser, H. H. Tan, C. Jagadish

Abstract: To perform polarization sensitive THz-TDS, it is necessary to be able to measure two (preferably orthogonal) electric field components of a terahertz transient. We have developed a polarization sensitive detector by fabricating a three-contact photoconductive receiver. To perform polarization sensitive THz-TDS, it is necessary to be able to measure two (preferably orthogonal) electric field components of a terahertz transient. We have developed a polarization sensitive detector by fabricating a three-contact photoconductive receiver. △ Less

Submitted 2 February, 2006; originally announced February 2006.

Comments: Conference, 1 page, 1 figure