Showing 1–11 of 11 results for author: Tan, C S

Physics-informed Transformer Model for the Design of Wavelength-filtering Ring Resonator

Authors: Yu Dian Lim, Feng Shuo Wan, Ren Jie Wan, Chuan Seng Tan

Abstract: We have developed a physics-informed transformer model to suggest design parameters in wavelength-filtering ring resonator, that suit a given pair of resonant wavelengths with <6 nm errors. The model provides a versatile method for rapid and accurate design of resonators corresponding to various resonant wavelengths. We have developed a physics-informed transformer model to suggest design parameters in wavelength-filtering ring resonator, that suit a given pair of resonant wavelengths with <6 nm errors. The model provides a versatile method for rapid and accurate design of resonators corresponding to various resonant wavelengths. △ Less

Submitted 23 April, 2025; originally announced April 2025.

Real-time Detection and Auto focusing of Beam Profiles from Silicon Photonics Gratings using YOLO model

Authors: Yu Dian Lim, Hong Yu Li, Simon Chun Kiat Goh, Xiangyu Wang, Peng Zhao, Chuan Seng Tan

Abstract: When observing the chip-to-free-space light beams from silicon photonics (SiPh) to free-space, manual adjustment of camera lens is often required to obtain a focused image of the light beams. In this letter, we demonstrated an auto-focusing system based on you-only-look-once (YOLO) model. The trained YOLO model exhibits high classification accuracy of 99.7% and high confidence level >0.95 when det… ▽ More When observing the chip-to-free-space light beams from silicon photonics (SiPh) to free-space, manual adjustment of camera lens is often required to obtain a focused image of the light beams. In this letter, we demonstrated an auto-focusing system based on you-only-look-once (YOLO) model. The trained YOLO model exhibits high classification accuracy of 99.7% and high confidence level >0.95 when detecting light beams from SiPh gratings. A video demonstration of real-time light beam detection, real-time computation of beam width, and auto focusing of light beams are also included. △ Less

Submitted 22 September, 2024; originally announced September 2024.

Recognizing Beam Profiles from Silicon Photonics Gratings using Transformer Model

Authors: Yu Dian Lim, Hong Yu Li, Simon Chun Kiat Goh, Xiangyu Wang, Peng Zhao, Chuan Seng Tan

Abstract: Over the past decade, there has been extensive work in developing integrated silicon photonics (SiPh) gratings for the optical addressing of trapped ion qubits in the ion trap quantum computing community. However, when viewing beam profiles from infrared (IR) cameras, it is often difficult to determine the corresponding heights where the beam profiles are located. In this work, we developed transf… ▽ More Over the past decade, there has been extensive work in developing integrated silicon photonics (SiPh) gratings for the optical addressing of trapped ion qubits in the ion trap quantum computing community. However, when viewing beam profiles from infrared (IR) cameras, it is often difficult to determine the corresponding heights where the beam profiles are located. In this work, we developed transformer models to recognize the corresponding height categories of beam profiles of light from SiPh gratings. The model is trained using two techniques: (1) input patches, and (2) input sequence. For model trained with input patches, the model achieved recognition accuracy of 0.938. Meanwhile, model trained with input sequence shows lower accuracy of 0.895. However, when repeating the model-training 150 cycles, model trained with input patches shows inconsistent accuracy ranges between 0.445 to 0.959, while model trained with input sequence exhibit higher accuracy values between 0.789 to 0.936. The obtained outcomes can be expanded to various applications, including auto-focusing of light beam and auto-adjustment of z-axis stage to acquire desired beam profiles. △ Less

Submitted 22 August, 2024; v1 submitted 19 August, 2024; originally announced August 2024.

1D photonic crystal direct bandgap GeSn-on-insulator laser

Authors: Hyo-Jun Joo, Youngmin Kim, Daniel Burt, Yongduck Jung, Lin Zhang, Melvina Chen, Samuel Jior Parluhutan, Dong-Ho Kang, Chulwon Lee, Simone Assali, Zoran Ikonic, Oussama Moutanabbir, Yong-Hoon Cho, Chuan Seng Tan, Donguk Nam

Abstract: GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal (PC… ▽ More GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal (PC) nanobeam with a very small device footprint of 7 $μm^2$ and a compact active area of ~1.2 $μm^2$ on a high-quality GeSn-on-insulator (GeSnOI) substrate. We also report that the improved directness in our strain-free nanobeam lasers leads to a lower threshold density and a higher operating temperature compared to the compressive strained counterparts. The threshold density of the strain-free nanobeam laser is ~18.2 kW cm$^{ -2}$ at 4 K, which is significantly lower than that of the unreleased nanobeam laser (~38.4 kW cm$^{ -2}$ at 4 K). Lasing in the strain-free nanobeam device persists up to 90 K, whereas the unreleased nanobeam shows a quenching of the lasing at a temperature of 70 K. Our demonstration offers a new avenue towards developing practical group-IV light sources with high-density integration and low power consumption. △ Less

Submitted 1 November, 2021; v1 submitted 13 August, 2021; originally announced August 2021.

Comments: 14 pages, 6 figures

TSV-integrated Surface Electrode Ion Trap for Scalable Quantum Information Processing

Authors: P. Zhao, J. -P. Likforman, H. Y. Li, J. Tao, T. Henner, Y. D. Lim, W. W. Seit, C. S. Tan, Luca Guidoni

Abstract: In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing… ▽ More In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with established CMOS back end process. We demonstrate the basic functionality of the trap by loading and laser-cooling single 88Sr+ ions. It is found that both heating rate (17 quanta/ms for an axial frequency of 300 kHz) and lifetime (~30 minutes) are comparable with traps of similar dimensions. This work pioneers the development of TSV-integrated ion traps, enriching the toolbox for scalable quantum computing. △ Less

Submitted 4 January, 2021; originally announced January 2021.

Strain effects on Phase-Filling Singularities in Highly Doped n-Type Ge

Authors: Zhigang Song, Wei-Jun Fan, C. S. Tan, Qijie Wang, Donguk Nam, D. H. Zhang, Greg Sun

Abstract: Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+Δ_{1}$ transition by advanced \textit{in situ} doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between $E_{1}$ and $E_{1}+Δ_{1}$ optical transitions made the PFS associa… ▽ More Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+Δ_{1}$ transition by advanced \textit{in situ} doping technology [Phys. Rev. Lett. 118, 267402 (2017)], but the strong overlap between $E_{1}$ and $E_{1}+Δ_{1}$ optical transitions made the PFS associated $E_{1}$ transition that occurs at the high doping concentration unobservable in their measurement. In this work, we investigate the PFS of the highly doped n-type Ge in the presence of the uniaxial and biaxial tensile strain along [100], [110] and [111] crystal orientation. Compared with the relaxed bulk Ge, the tensile strain along [100] increases the energy separation between the $E_{1}$ and $E_{1}+Δ_{1}$ transition, making it possible to reveal the PFS associated $E_{1}$ transition in optical measurement. Besides, the application of tensile strain along [110] and [111] offers the possibility of lowering the required doping concentration for the PFS to be observed, resulting in new additional features associated with $E_{1}+Δ_{1}$ transition at inequivalent $L$-valleys. These theoretical predications with more distinguishable optical transition features in the presence of the uniaxial and biaxial tensile strain can be more conveniently observed in experiment, providing new insights into the excited states in heavily doped semiconductors. △ Less

Submitted 17 January, 2020; originally announced January 2020.

Comments: 5 pages, 5 figures

Band structure of strained Ge$_{1-x}$Sn$_x$ alloy: a full-zone 30-band $k\cdot p$ model

Authors: Zhigang Song, Weijun Fan, Chuan Seng Tan, Qijie Wang, Donguk Nam, Dao Hua Zhang, Greg Sun

Abstract: We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to the case of strained Ge$_{1-x}$Sn$_{x}$ alloy. The strain-relevant parameters for the 30-band $k$$\cdot$$p$ model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the depende… ▽ More We extend the previous 30-band $k$$\cdot$$p$ model effectively employed for relaxed Ge$_{1-x}$Sn$_{x}$ alloy to the case of strained Ge$_{1-x}$Sn$_{x}$ alloy. The strain-relevant parameters for the 30-band $k$$\cdot$$p$ model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at $L$-valley and $Γ$-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band $k$$\cdot$$p$ model and relevant input parameters successfully applied to relaxed and strained Ge$_{1-x}$Sn$_{x}$ alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy. △ Less

Submitted 8 August, 2019; originally announced August 2019.

Comments: 8-pages, 6 figures

Improved Thin Film Quality and Photoluminescence of N-Doped Epitaxial Germanium-on-Silicon using MOCVD

Authors: Guangnan Zhou, Alejandra V. Cuervo Covian, Kwang Hong Lee, Chuan Seng Tan, Jifeng Liu, Guangrui, Xia

Abstract: Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light e… ▽ More Ge-on-Si structures in-situ doped with phosphorus or arsenic via metal organic chemical vapor deposition (MOCVD) were investigated. Surface roughness, strain, threading dislocation desnity, Si-Ge interdiffusion, dopant diffusion, and photoluminescence were characterized to study the impacts of defect annealing and Si substrate offcut effects on the Ge film quality and most importantly, the light emission properties. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films have a small tensile strain of 0.2%. As-grown P and As-doped Ge films have threading dislocaiton densities from 2.8e8 to 1.1e9 cm^(-2) without defect annealing. With thermal cycling, these values reduced to 1-1.5e8 cm^(-2). The six degree offcut of the Si substrate was shown to have little impact. In contrast to delta doping, the out-diffusion of dopants has been successfully suppressed to retain the doping concentration upon defect annealing. However, the photoluminescence intensity decreases mostly due to Si-Ge interdiffusion, which also causes a blue-shift in the emission wavelength. Compared to a benckmarking sample from the first Ge laser work doped by delta doping method in 2012, the as-grown P or As-doped Ge films have similar photoluminescence intensity at a 25% doping concentration and smoother surface, which are promising for Ge lasers with better light emission efficiencies. △ Less

Submitted 25 February, 2019; v1 submitted 29 January, 2019; originally announced January 2019.

Comments: arXiv admin note: text overlap with arXiv:1712.05468

Impacts of Doping on Epitaxial Germanium Thin Film Quality and Si-Ge Interdiffusion

Authors: Guangnan Zhou, Kwang Hong Lee, Dalaver H. Anjum, Qiang Zhang, Xixiang Zhang, Chuan Seng Tan, Guangrui, Xia

Abstract: Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations… ▽ More Ge-on-Si structures with three different dopants (P, As and B) and those without intentional doping were grown and annealed. Several different materials characterization methods have been performed to characterize the Ge film quality. All samples have a smooth surface (roughness < 1.5 nm), and the Ge films are almost entirely relaxed. On the other hand, B doped Ge films have threading dislocations above 1 x 10^8 cm-2. While P and As doping can reduce the threading dislocation density to be less than 10^6 cm-2 without annealing. The interdiffusion of Si and Ge of different films have been investigated experimentally and theoretically. A quantitative model of Si-Ge interdiffusion under extrinsic conditions across the full x_Ge range and with the dislocation mediated diffusion term was established. The Kirkendall effect has been observed. The results are of technical significance for the structure, doping, and process design of Ge-on-Si based devices, especially for photonic applications. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Low-threshold optically pumped lasing in highly strained Ge nanowires

Authors: Shuyu Bao, Daeik Kim, Chibuzo Onwukaeme, Shashank Gupta, Krishna Saraswat, Kwang Hong Lee, Yeji Kim, Dabin Min, Yongduck Jung, Haodong Qiu, Hong Wang, Eugene A. Fitzgerald, Chuan Seng Tan, Donguk Nam

Abstract: The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure ha… ▽ More The integration of efficient, miniaturized group IV lasers into CMOS architecture holds the key to the realization of fully functional photonic-integrated circuits. Despite several years of progress, however, all group IV lasers reported to date exhibit impractically high thresholds owing to their unfavorable bandstructures. Highly strained germanium with its fundamentally altered bandstructure has emerged as a potential low-threshold gain medium, but there has yet to be any successful demonstration of lasing from this seemingly promising material system. Here, we demonstrate a low-threshold, compact group IV laser that employs germanium nanowire under a 1.6% uniaxial tensile strain as the gain medium. The amplified material gain in strained germanium can sufficiently surmount optical losses at 83 K, thus allowing the first observation of multimode lasing with an optical pumping threshold density of ~3.0 kW cm^-^2. Our demonstration opens up a new horizon of group IV lasers for photonic-integrated circuits. △ Less

Submitted 15 August, 2017; originally announced August 2017.

Comments: 31 pages, 9 figures

On the Origins of Near-Surface Stresses in Silicon around Cu-filled and CNT-filled Through Silicon Vias

Authors: Ye Zhu, Kaushik Ghosh, Hong Yu Li, Yiheng Lin, Chuan Seng Tan, Guangrui Xia

Abstract: Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the observations, we proved that the stresses near TSVs are mainly from two sources: 1) pre-existing stress before via filling, and 2) coefficients of thermal expan… ▽ More Micro-Raman spectroscopy was employed to study the near-surface stress distributions and origins in Si around through silicon vias (TSVs) at both room temperature and elevated temperatures for Cu-filled and CNT-filled TSV samples. From the observations, we proved that the stresses near TSVs are mainly from two sources: 1) pre-existing stress before via filling, and 2) coefficients of thermal expansion (CTE) mismatch-induced stress. CTE-mismatch-induced stress is shown to dominate the compressive regime of the near-surface stress distribution around Cu-filled TSV structures, while pre-existing stress dominates the full range of the stress distribution in the CNT-filled TSV structures. Once the pre-existing stress is minimized, the total stress around CNT-filled TSVs can be minimized accordingly. Therefore, compared to Cu-filled TSVs, CNT-filled TSVs hold the potential to circumvent the hassle of stress-aware circuit layout and to solve the stress-related reliability issues. △ Less

Submitted 15 January, 2016; originally announced January 2016.