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Localisation of hexagonal boron nitride colour centres using patterned dielectric layers on graphene
Authors:
M. K. Prasad,
V. Babenko,
A. W. Tadbier,
S. Hofmann,
J. P. Goss,
J. D. Mar
Abstract:
One of the most promising building blocks for the development of spin qubits, single-photon sources, and quantum sensors at room temperature, as well as 2D ultraviolet light-emitting diodes, are defect colour centres in 2D hexagonal boron nitride (hBN). However, a significant requirement for the realisation of such devices towards scalable technologies is the deterministic localisation of hBN colo…
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One of the most promising building blocks for the development of spin qubits, single-photon sources, and quantum sensors at room temperature, as well as 2D ultraviolet light-emitting diodes, are defect colour centres in 2D hexagonal boron nitride (hBN). However, a significant requirement for the realisation of such devices towards scalable technologies is the deterministic localisation of hBN colour centres. Here, we demonstrate a novel approach to the localisation of hBN colour centre emission by using patterned dielectric layers grown on graphene via atomic layer deposition (ALD). While colour centre emission is quenched within areas where hBN is deposited directly on graphene due to charge transfer, it is maintained where hBN is deposited on micron-sized Al2O3 pillars which act as barriers to charge transfer. Importantly, our approach allows for device architectures where graphene layers are used as top and bottom electrodes for the application of vertical electric fields, such as for carrier injection in electroluminescent devices, Stark shifting of colour centre emission, and charge state control of defect colour centres. Furthermore, the use of ALD to grow dielectric layers directly on graphene allows for the control of tunnel barrier thicknesses with atomic layer precision, which is crucial for many of these device applications. Our work represents an important step towards the realisation of a wide range of scalable device applications based on the determinsitic localisation of electrically controlled hBN colour centres
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Submitted 12 March, 2025;
originally announced March 2025.
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Achieving 100% amplitude modulation depth in a graphene-based tuneable capacitance metamaterial
Authors:
Ruqiao Xia,
Nikita W. Almond,
Stephen J. Kindness,
Sergey A. Mikhailov,
Wadood Tadbier,
Riccardo Degl'Innocenti,
Yuezhen Lu,
Abbie Lowe,
Ben Ramsay,
Lukas A. Jakob,
James Dann,
Stephan Hofmann,
Harvey E. Beere,
David A. Ritchie,
Wladislaw Michailow
Abstract:
Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly…
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Effective control of terahertz radiation requires the development of efficient and fast modulators with a large modulation depth. This challenge is often tackled by using metamaterials, artificial sub-wavelength optical structures engineered to resonate at the desired terahertz frequency. Metamaterial-based devices exploiting graphene as the active tuneable element have been proven to be a highly effective solution for THz modulation. However, whilst the graphene conductivity can be tuned over a wide range, it cannot be reduced to zero due to the gapless nature of graphene, which directly limits the maximum achievable modulation depth for single-layer metamaterial modulators. Here, we demonstrate two novel solutions to circumvent this restriction: Firstly, we excite the modulator from the back of the substrate, and secondly, we incorporate air gaps into the graphene patches. This results in a ground-breaking graphene-metal metamaterial terahertz modulator, operating at 2.0-2.5 THz, which demonstrates a 99.01 % amplitude and a 99.99 % intensity modulation depth at 2.15 THz, with a reconfiguration speed in excess of 3 MHz. Our results open up new frontiers in the area of terahertz technology.
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Submitted 26 December, 2023;
originally announced December 2023.
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GFET Lab: A Graphene Field-Effect Transistor TCAD Tool
Authors:
Nathaniel J. Tye,
Abdul Wadood Tadbier,
Stephan Hofmann,
Phillip Stanley-Marbell
Abstract:
Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority of GFET modelling relies on user implementation. To this end, we present GFET Lab, a user-friendly, open-source software tool for simulating GFETs.
We first pr…
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Graphene field-effect transistors (GFETs) are experimental devices which are increasingly seeing commercial and research applications. Simulation and modelling forms an important stage in facilitating this transition, however the majority of GFET modelling relies on user implementation. To this end, we present GFET Lab, a user-friendly, open-source software tool for simulating GFETs.
We first provide an overview of approaches to device modelling and a brief survey of GFET compact models and limitations. From this survey, we identify three key criteria for a suitable predictive model for circuit design: it must be a compact model; it must be SPICE-compatible; it must have a minimal number of fitting parameters. We selected Jimenez's drain-current model as it best matched these criteria, and we introduce some modifications to improve the predictive properties, namely accounting for saturation velocity and the asymmetry in n- and p-type carrier mobilities.
We then validate the model by comparing GFETs simulated in our tool against experimentally-obtained GFET characteristics with the same materials and geometries and find good agreement between GFET Lab and experiment. We demonstrate the ability to export SPICE models for use in higher level circuit simulations and compare SPICE simulations of GFETs against GFETs simulated in GFET Lab, again showing good agreement.
Lastly, we provide a brief tutorial of GFET Lab to demonstrate and encourage its use as a community-developed piece of software with both research and educational applications.
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Submitted 24 June, 2022;
originally announced June 2022.
