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Theory of excitonic complexes in gated WSe$_2$ quantum dots
Authors:
Daniel Miravet,
Ludmiła Szulakowska,
Maciej Bieniek,
Marek Korkusiński,
Paweł Hawrylak
Abstract:
Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance of the repulsion of electrons due to the gate potential with the attraction caused by the Coulomb interaction with a hole localized in the quantum dot. This work…
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Single-layer quantum dot gate potential causes type-II band alignment, i.e. electrostatically confines holes and repels electrons, or vice versa. Hence, the confinement of excitons in gated type II quantum dots involves a delicate balance of the repulsion of electrons due to the gate potential with the attraction caused by the Coulomb interaction with a hole localized in the quantum dot. This work presents a theory for neutral excitonic complexes within gated $\text{WSe}_\text{2}$ quantum dots, considering spin, valley, electronic orbitals, and many-body interactions. We analyze how the electron-hole attraction depends on a range of system parameters, such as screened Coulomb interaction, strength of confinement of holes, and repulsion of electrons. Using an atomistic tight binding model we compute valence and conduction band states within a computational box comprising over one million atoms with applied gate potential. The atomistic wavefunctions are then used to calculate direct and exchange Coulomb matrix elements for a fictitious type I quantum dot, and to obtain a spectrum of interacting electron-hole pairs. Next, we study the effect of repulsive potential, pulling away electrons from the valence hole. We determine whether electron-hole pairs are sufficiently attracted to overcome electron repulsion by the confinement potential. Finally, we compute the dipole transition between hole and electron states to obtain the absorption spectrum.
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Submitted 21 June, 2024;
originally announced June 2024.
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Bayesian autotuning of Hubbard model quantum simulators
Authors:
Ludmila Szulakowska,
Jun Dai
Abstract:
Spins in gated semiconductor quantum dots (QDs) are a promising platform for Hubbard model simulation inaccessible to computation. Precise control of the tunnel couplings by tuning voltages on metallic gates is vital for a successful QD-based simulator. However, the number of tunable voltages and the complexity of the relationships between gate voltages and the parameters of the resulting Hubbard…
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Spins in gated semiconductor quantum dots (QDs) are a promising platform for Hubbard model simulation inaccessible to computation. Precise control of the tunnel couplings by tuning voltages on metallic gates is vital for a successful QD-based simulator. However, the number of tunable voltages and the complexity of the relationships between gate voltages and the parameters of the resulting Hubbard models quickly increase with the number of quantum dots. As a consequence, it is not known if and how a particular gate geometry yields a target Hubbard model. To solve this problem, we propose a hybrid machine-learning approach using a combination of support vector machines (SVMs) and Bayesian optimization (BO) to identify combinations of voltages that realize a desired Hubbard model. SVM constrains the space of voltages by rejecting voltage combinations producing potentials unsuitable for tight-binding (TB) approximation. The target voltage combinations are then identified by BO in the constrained subdomain. For large QD arrays, we propose a scalable efficient iterative procedure using our SVM-BO approach, which optimises voltage subsets and utilises a two-QD SVM model for large systems. Our results use experimental gate lithography images and accurate integrals calculated with linear combinations of harmonic orbitals to train the machine learning algorithms.
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Submitted 6 October, 2022;
originally announced October 2022.
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Physics graduate student employment: what we can learn from professional social media
Authors:
Erin M. Tonita,
Ludmila Szulakowska,
Joshua Baxter,
Erin L. Flannigan,
Naveena Janakiraman Narayanan,
Jean-Michel Menard
Abstract:
In this study, we investigated the employment status of recent University of Ottawa physics MSc and PhD graduates, finding that 94% of graduates are either employed or pursuing further physics education one year post-graduation. Our database was populated from the public online repository of MSc and PhD theses submitted between the academic years of 2011 to 2019, with employment information collec…
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In this study, we investigated the employment status of recent University of Ottawa physics MSc and PhD graduates, finding that 94% of graduates are either employed or pursuing further physics education one year post-graduation. Our database was populated from the public online repository of MSc and PhD theses submitted between the academic years of 2011 to 2019, with employment information collected in 2020 from the professional social media platform LinkedIn. Our results highlight that graduates primarily find employment quickly and in their field of study, with most graduates employed in either academia or physics-related industries. We also found that a significant portion of employed graduates, 20%, find employment in non-traditional physics careers, such as business management and healthcare. Graduates with careers in academia tend to have lower online connectivity compared to graduates with careers in industry or non-traditional fields, suggesting a greater importance for online networking for students interested in non-academic careers.
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Submitted 8 June, 2021;
originally announced June 2021.
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Valley and spin polarized broken symmetry states of interacting electrons in gated MoS$_2$ quantum dots
Authors:
Ludmila Szulakowska,
Moritz Cygorek,
Maciej Bieniek,
Pawel Hawrylak
Abstract:
Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons to atomically thin layers of 2D crystals with reduced screening. The interplay of strong interactions on a hexagonal lattice with two nonequivalent valleys, topo…
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Understanding strongly interacting electrons enables the design of materials, nanostructures and devices. Developing this understanding relies on the ability to tune and control electron-electron interactions by, e.g., confining electrons to atomically thin layers of 2D crystals with reduced screening. The interplay of strong interactions on a hexagonal lattice with two nonequivalent valleys, topological moments, and the Ising-like spin-orbit interaction gives rise to a variety of phases of matter corresponding to valley and spin polarized broken symmetry states. In this work we describe a highly tunable strongly interacting system of electrons laterally confined to monolayer transition metal dichalcogenide MoS$_2$ by metalic gates. We predict the existence of valley and spin polarized broken symmetry states tunable by the parabolic confining potential using exact diagonalization techniques for up to $N=6$ electrons. We find that the ground state is formed by one of two phases, either both spin and valley polarized or valley unpolarised but spin intervalley antiferromagnetic, which compete as a function of electronic shell spacing. This finding can be traced back to the combined effect of Ising-like spin-orbit coupling and weak intervalley exchange interaction. These results provide an explanation for interaction-driven symmetry-breaking effects in valley systems and highlight the important role of electron-electron interactions for designing valleytronic devices.
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Submitted 9 May, 2020;
originally announced May 2020.
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Band nesting and exciton spectrum in monolayer MoS$_2$
Authors:
Maciej Bieniek,
Ludmiła Szulakowska,
Paweł Hawrylak
Abstract:
We discuss here the effect of band nesting and topology on the spectrum of excitons in a single layer of MoS$_2$, a prototype transition metal dichalcogenide material. We solve for the single particle states using the ab initio based tight-binding model containing metal $d$ and sulfur $p$ orbitals. The metal orbitals contribution evolving from $K$ to $Γ$ points results in conduction-valence band n…
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We discuss here the effect of band nesting and topology on the spectrum of excitons in a single layer of MoS$_2$, a prototype transition metal dichalcogenide material. We solve for the single particle states using the ab initio based tight-binding model containing metal $d$ and sulfur $p$ orbitals. The metal orbitals contribution evolving from $K$ to $Γ$ points results in conduction-valence band nesting and a set of second minima at $Q$ points in the conduction band. There are three $Q$ minima for each $K$ valley. We accurately solve the Bethe-Salpeter equation including both $K$ and $Q$ points and obtain ground and excited exciton states. We determine the effects of the electron-hole single particle energies including band nesting, direct and exchange screened Coulomb electron-hole interactions and resulting topological magnetic moments on the exciton spectrum. The ability to control different contributions combined with accurate calculations of the ground and excited exciton states allows for the determination of the importance of different contributions and a comparison with effective mass and $k\cdot p$ massive Dirac fermion models.
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Submitted 29 February, 2020; v1 submitted 2 January, 2020;
originally announced January 2020.
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The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
Authors:
Maciej Bieniek,
Ludmila Szulakowska,
Pawel Hawrylak
Abstract:
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box including up to million atoms with periodic boundary conditions and parabolic confining potential due to external gates embedded in it. With this methodology a…
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We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box including up to million atoms with periodic boundary conditions and parabolic confining potential due to external gates embedded in it. With this methodology applied to MoS2, we find a twofold degenerate energy spectrum of electrons confined in the two non-equivalent K-valleys by the metallic gates as well as six-fold degenerate spectrum associated with Q-valleys. We compare the electron spectrum with the energy levels of electrons confined in GaAs/GaAlAs and in self-assembled quantum dots. We discuss the role of spin splitting and topological moments on the K and Q valley electronic states in quantum dots with sizes comparable to experiment.
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Submitted 12 December, 2019; v1 submitted 22 July, 2019;
originally announced July 2019.
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Electronic structure, magnetoexcitons and valley polarized electron gas in 2D crystals
Authors:
Ludmila Szulakowska,
Maciej Bieniek,
Pawel Hawrylak
Abstract:
We describe here recent work on the electronic properties, magnetoexcitons and valley polarised electron gas in 2D crystals. Among 2D crystals, monolayer $MoS_2$ has attracted significant attention as a direct-gap 2D semiconductor analogue of graphene. The crystal structure of monolayer $MoS_2$ breaks inversion symmetry and results in K valley selection rules allowing to address individual valleys…
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We describe here recent work on the electronic properties, magnetoexcitons and valley polarised electron gas in 2D crystals. Among 2D crystals, monolayer $MoS_2$ has attracted significant attention as a direct-gap 2D semiconductor analogue of graphene. The crystal structure of monolayer $MoS_2$ breaks inversion symmetry and results in K valley selection rules allowing to address individual valleys optically. Additionally, the band nesting near Q points is responsible for enhancing the optical response of $MoS_2$.We show that at low energies the electronic structure of $MoS_2$ is well approximated by the massive Dirac Fermion model. We focus on the effect of magnetic field on optical properties of $MoS_2$. We discuss the Landau level structure of massive Dirac fermions in the two non-equivalent valleys and resulting valley Zeeman splitting. The effects of electron-electron interaction on the valley Zeeman splitting and on the magneto-exciton spectrum are described. We show the changes in the absorption spectrum as the self-energy, electron-hole exchange and correlation effects are included. Finally, we describe the valley-polarised electron gas in $WS_2$ and its optical signature in finite magnetic fields.
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Submitted 29 October, 2018;
originally announced October 2018.
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Band nesting, massive Dirac Fermions and Valley Lande and Zeeman effects in transition metal dichalcogenides: a tight-binding model
Authors:
M. Bieniek,
M. Korkusiński,
L. Szulakowska,
P. Potasz,
I. Ozfidan,
P. Hawrylak
Abstract:
We present here the minimal tight--binding model for a single layer of transition metal dichalcogenides (TMDCs) MX$_{2}$ (M--metal, X--chalcogen) which illuminates the physics and captures band nesting, massive Dirac Fermions and Valley Lande and Zeeman magnetic field effects. TMDCs share the hexagonal lattice with graphene but their electronic bands require much more complex atomic orbitals. Usin…
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We present here the minimal tight--binding model for a single layer of transition metal dichalcogenides (TMDCs) MX$_{2}$ (M--metal, X--chalcogen) which illuminates the physics and captures band nesting, massive Dirac Fermions and Valley Lande and Zeeman magnetic field effects. TMDCs share the hexagonal lattice with graphene but their electronic bands require much more complex atomic orbitals. Using symmetry arguments, a minimal basis consisting of 3 metal d--orbitals and 3 chalcogen dimer p--orbitals is constructed. The tunneling matrix elements between nearest neighbor metal and chalcogen orbitals are explicitly derived at $K$, $-K$ and $Γ$ points of the Brillouin zone. The nearest neighbor tunneling matrix elements connect specific metal and sulfur orbitals yielding an effective $6\times 6$ Hamiltonian giving correct composition of metal and chalcogen orbitals but not the direct gap at $K$ points. The direct gap at $K$, correct masses and conduction band minima at $Q$ points responsible for band nesting are obtained by inclusion of next neighbor Mo--Mo tunneling. The parameters of the next nearest neighbor model are successfully fitted to MX$_2$ (M=Mo, X=S) density functional (DFT) ab--initio calculations of the highest valence and lowest conduction band dispersion along $K-Γ$ line in the Brillouin zone. The effective two--band massive Dirac Hamiltonian for MoS$_2$, Lande g--factors and valley Zeeman splitting are obtained.
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Submitted 8 May, 2017;
originally announced May 2017.
