-
Dynamic Hypergraph Partitioning of Quantum Circuits with Hybrid Execution
Authors:
Shane Sweeney,
Krishnendu Guha
Abstract:
Quantum algorithms offer an exponential speedup over classical algorithms for a range of computational problems. The fundamental mechanisms underlying quantum computation required the development and construction of quantum computers. These devices are referred to as NISQ (Noisy Intermediate-Scale Quantum) devices. Not only are NISQ devices extremely limited in their qubit count but they also suff…
▽ More
Quantum algorithms offer an exponential speedup over classical algorithms for a range of computational problems. The fundamental mechanisms underlying quantum computation required the development and construction of quantum computers. These devices are referred to as NISQ (Noisy Intermediate-Scale Quantum) devices. Not only are NISQ devices extremely limited in their qubit count but they also suffer from noise during computation and this problem only gets worse as the size of the circuit increases which limits the practical use of quantum computers for modern day applications. This paper will focus on utilizing quantum circuit partitioning to overcome the inherent issues of NISQ devices. Partitioning a quantum circuit into smaller subcircuits has allowed for the execution of quantum circuits that are too large to fit on one quantum device. There have been many previous approaches to quantum circuit partitioning and each of these approaches differ in how they work with some focusing on hardware-aware partitioning, optimal graph-based partitioning, multi-processor architectures and many more. These approaches achieve success in their objective but they often fail to scale well which impacts cost and noise. The ultimate goal of this paper is to mitigate these issues by minimizing 3 important metrics; noise, time and cost. To achieve this we use dynamic partitioning for practical circuit cutting and we take advantage of the benefits of hybrid execution where classical computation will be used alongside quantum hardware. This approach has proved to be beneficial with respect to noise with classical execution enabling a 42.30% reduction in noise and a 40% reduction in the number of qubits required in cases where a mixture of classical and quantum computation were required.
△ Less
Submitted 11 June, 2025;
originally announced June 2025.
-
Heterogeneous-free narrow linewidth semiconductor laser with optical injection locking
Authors:
Xiao Sun,
Zhibo Li,
Yiming Sun,
Yupei Wang,
Jue Wang,
John H. Marsh,
Stephen. J. Sweeney,
Anthony E. Kelly,
Lianping Hou
Abstract:
Narrow linewidth lasers are indispensable for coherent optical systems, including communications, metrology, and sensing. Although compact semiconductor lasers with narrow linewidths and low noise have been demonstrated, their spectral purity typically relies on hybrid or heterogeneous external cavity feedback. Here, we present a theoretical and experimental demonstration of a heterogeneous free o…
▽ More
Narrow linewidth lasers are indispensable for coherent optical systems, including communications, metrology, and sensing. Although compact semiconductor lasers with narrow linewidths and low noise have been demonstrated, their spectral purity typically relies on hybrid or heterogeneous external cavity feedback. Here, we present a theoretical and experimental demonstration of a heterogeneous free optical injection locking (HF OIL) semiconductor laser. By integrating a topological interface state extended (TISE) laser with a micro ring resonator (MRR) on an AlGaInAs multiple quantum well platform,we achieve monolithic photon injection and phase locking, thereby reducing the optical linewidth. We fabricated and characterized a 1550 nm sidewall HF OIL laser, achieving stable single mode operation over a broad current range (65 to 300 mA) and a side mode suppression ratio (SMSR) over 50 dB. Under injection locking, the devices Voigt fitted linewidth narrowed from over 1.7 MHz (free running) to 4.2 kHz, representing a three order of magnitude improvement over conventional distributed feedback lasers. The intrinsic linewidth of 1.4 kHz is measured by correlated delayed self-heterodyne frequency noise power spectrum density (FN PSD) method. Moreover, the HF OIL laser demonstrated high phase stability and the ability to transition from a random phased to a phase locked state. These results underscore the potential of HF-OIL lasers in advancing coherent optical communications and phase encoders in quantum key distribution (QKD) systems.
△ Less
Submitted 13 January, 2025;
originally announced January 2025.
-
Widely Tunable Photonic Filter Based on Equivalent Chirped Four-Phase-Shifted Sampled Bragg Gratings
Authors:
Simeng Zhu,
Bocheng Yuan,
Mohanad Al-Rubaiee,
Yiming Sun,
Yizhe Fan,
Ahmet Seckin Hezarfen,
Stephen J. Sweeney,
John H. Marsh,
Lianping Hou
Abstract:
We have developed an integrated dual-band photonic filter (PF) utilizing equivalent chirped four-phase-shifted sidewall-sampled Bragg gratings (4PS-SBG) on a silicon-on-insulator (SOI) platform. Using the reconstruction equivalent-chirp technique, we designed linearly chirped 4PS Bragg gratings with two π-phase shifts (π-PS) positioned at 1/3 and 2/3 of the grating cavity, introducing two passband…
▽ More
We have developed an integrated dual-band photonic filter (PF) utilizing equivalent chirped four-phase-shifted sidewall-sampled Bragg gratings (4PS-SBG) on a silicon-on-insulator (SOI) platform. Using the reconstruction equivalent-chirp technique, we designed linearly chirped 4PS Bragg gratings with two π-phase shifts (π-PS) positioned at 1/3 and 2/3 of the grating cavity, introducing two passbands in the +1st order channel. Leveraging the significant thermo-optic effect of silicon, dual-band tuning is achieved through integrated micro-heaters (MHs) on the chip surface. By varying the injection currents from 0 to 85 mA into the MHs, the device demonstrates continuous and wide-range optical frequency division (OFD) performance, with the frequency interval between the two passbands adjustable from 52.1 GHz to 439.5 GHz. Four notable frequency division setups at 100 GHz, 200 GHz, 300 GHz, and 400 GHz were demonstrated using a 100 GHz, 1535 nm semiconductor passive mode-locked laser as the light source.
△ Less
Submitted 10 October, 2024;
originally announced October 2024.
-
Continuous Phase Modulation Technology Based on Grating Period Interval for High Grating Coupling Efficiency and Precise Wavelength Control
Authors:
Yiming Sun,
Simeng Zhu,
Bocheng Yuan,
Yizhe Fan,
Mohanad Al-Rubaiee,
Xiao Sun,
John H. Marsh,
Stephen J. Sweeney,
Lianping Hou
Abstract:
A novel grating modulation technique for laser arrays is proposed and demonstrated. This method modifies the initial phase within each grating period, applying a total phase shift that increments in an arithmetic progression, ensuring equal channel spacing across the array. Despite the varying phase shifts, the device maintains coupling efficiency comparable to traditional uniform grating structur…
▽ More
A novel grating modulation technique for laser arrays is proposed and demonstrated. This method modifies the initial phase within each grating period, applying a total phase shift that increments in an arithmetic progression, ensuring equal channel spacing across the array. Despite the varying phase shifts, the device maintains coupling efficiency comparable to traditional uniform grating structures. Furthermore, the continuous phase modulation enhances the stability of the lasing wavelength of the primary mode, reducing sensitivity to fabrication errors. This improved tolerance to manufacturing inaccuracies represents a significant technological advancement, making this approach highly promising for applications requiring precise and stable wavelength control.
△ Less
Submitted 1 October, 2024;
originally announced October 2024.
-
Multi-Wavelength DFB Laser Based on Sidewall Third Order Four Phase-Shifted Sampled Bragg Grating with Uniform Wavelength Spacing
Authors:
Xiao Sun,
Zhibo Li,
Yizhe Fan,
Mohanad Jamal Al-Rubaiee,
John H. Marsh,
Anthony E Kelly,
Stephen. J. Sweeney,
Lianping Hou
Abstract:
We present the first demonstration of a 1550 nm multi-wavelength distributed feedback (MW-DFB) laser employing a third-order, four-phase-shifted sampled sidewall grating. By utilizing linearly chirped sampled gratings and incorporating multiple true π-phase shifts within the cavity, we achieved and experimentally validated a four-wavelength laser with a channel spacing of 0.4 nm. The device operat…
▽ More
We present the first demonstration of a 1550 nm multi-wavelength distributed feedback (MW-DFB) laser employing a third-order, four-phase-shifted sampled sidewall grating. By utilizing linearly chirped sampled gratings and incorporating multiple true π-phase shifts within the cavity, we achieved and experimentally validated a four-wavelength laser with a channel spacing of 0.4 nm. The device operates stably and uniformly across a wide range of injection currents from 280 mA to 350 mA. The average wavelength spacing was measured at 0.401 nm with a standard deviation of 0.0081 nm. Additionally, we demonstrated a 0.3 nm MW-DFB laser with a seven-channel output, achieving a wavelength spacing of 0.274 nm and a standard deviation of 0.0055 nm. This MW-DFB laser features a ridge waveguide with sidewall gratings, requiring only one metalorganic vapor-phase epitaxy (MOVPE) step and a single III-V material etching process. This streamlined fabrication approach simplifies device manufacturing and is well-suited for dense wavelength division multiplexing (DWDM) systems.
△ Less
Submitted 31 October, 2024; v1 submitted 26 September, 2024;
originally announced September 2024.
-
Narrow Linewidth Distributed Feedback Lasers Utilizing Distributed Phase Shift
Authors:
Yiming Sun,
Bocheng Yuan,
Xiao Sun,
Simeng Zhu,
Yizhe Fan,
Mohanad Al-Rubaiee,
John H. Marsh,
Stephen J. Sweeney,
Lianping Hou
Abstract:
This study proposes and experimentally demonstrates a distributed feedback (DFB) laser with a distributed phase shift (DPS) region at the center of the DFB cavity. By modeling the field intensity distribution in the cavity and the output spectrum, the DPS region length and phase shift values have been optimized. Experimental comparisons with lasers using traditional π-phase shifts confirm that DFB…
▽ More
This study proposes and experimentally demonstrates a distributed feedback (DFB) laser with a distributed phase shift (DPS) region at the center of the DFB cavity. By modeling the field intensity distribution in the cavity and the output spectrum, the DPS region length and phase shift values have been optimized. Experimental comparisons with lasers using traditional π-phase shifts confirm that DFB lasers with optimized DPS lengths and larger phase shifts (up to 15π) achieve stable single longitudinal mode operation over a broader current range, with lower threshold current, higher power slope efficiency, and a higher side mode suppression ratio (SMSR). Furthermore, the minimum optical linewidth is reduced significantly, from 1.3 MHz to 220 kHz.
△ Less
Submitted 28 August, 2024;
originally announced August 2024.
-
Embracing Fairness in Consumer Electricity Markets using an Automatic Market Maker
Authors:
Shaun Sweeney,
Chris King,
Mark O'Malley,
Robert Shorten
Abstract:
As consumer flexibility becomes expected, it is important that the market mechanisms which attain that flexibility are perceived as fair. We set out fairness issues in energy markets today, and propose a market design to address them. Consumption is categorised as either essential or flexible with different prices and reliability levels for each. Prices are generated by an Automatic Market Maker (…
▽ More
As consumer flexibility becomes expected, it is important that the market mechanisms which attain that flexibility are perceived as fair. We set out fairness issues in energy markets today, and propose a market design to address them. Consumption is categorised as either essential or flexible with different prices and reliability levels for each. Prices are generated by an Automatic Market Maker (AMM) based on instantaneous scarcity and resource is allocated using a novel Fair Play algorithm. We empirically show the performance of the system over 1 year for 101 UK households and benchmark its performance against more classical approaches.
△ Less
Submitted 30 July, 2024;
originally announced July 2024.
-
A smart electric bike for smart cities
Authors:
Shaun Sweeney,
Robert Shorten,
David Timoney,
Giovanni Russo,
Francesco Pilla
Abstract:
This is a Masters Thesis completed at University College Dublin, Ireland in 2017 which involved augmenting an off-the-shelf electric bike with sensors to enable new services to be delivered to cyclists in cities. The application of primary interest was to control the cyclist's ventilation rate based on the concentration of local air pollutants. Detailed modelling and system design is presented for…
▽ More
This is a Masters Thesis completed at University College Dublin, Ireland in 2017 which involved augmenting an off-the-shelf electric bike with sensors to enable new services to be delivered to cyclists in cities. The application of primary interest was to control the cyclist's ventilation rate based on the concentration of local air pollutants. Detailed modelling and system design is presented for our Cyberphysical system which consisted of a modified BTwin e-bike, Cycle Analyst sensors, the cyclist themselves, a Bluetooth connected smartphone and our algorithms. Control algorithms to regulate the proportion of power the cyclist provided as a proxy for their ventilation rate were proposed and validated in a basic way, which were later proven significantly further in Further Work (see IEEE Transactions on Intelligent Transportation Systems paper: https://ieeexplore.ieee.org/abstract/document/8357977). The basic idea was to provide more electrical assistance to cyclists in areas of high air pollution to reduce the cyclist ventilation rate and thereby the amount of air pollutants inhaled. This presents an interesting control challenge due to the human-in-the-loop characteristics and the potential for impactful real life applications. A background literature review is provided on energy as it relates to cycling and some other applications are also discussed. A link to a video which demonstrates the system is provided, and also to a blog published by IBM Research about the system.
△ Less
Submitted 13 March, 2022;
originally announced March 2022.
-
Pitchfork-bifurication-based competitive and collaborative control of an E-bike system
Authors:
Shaun Sweeney,
Hugo Lhachemi,
Andrew Mannion,
Giovanni Russo,
Robert Shorten
Abstract:
This paper is concerned with the design of a human-in-the-loop system for deployment on a smart pedelec (e-bike). From the control-theoretic perspective, the goal is not only to use the power assistance of the e-bike to reject disturbances along the route but also to manage the possibly competitive interactions between a human and the motor intervention. Managing the competitive/cooperative nature…
▽ More
This paper is concerned with the design of a human-in-the-loop system for deployment on a smart pedelec (e-bike). From the control-theoretic perspective, the goal is not only to use the power assistance of the e-bike to reject disturbances along the route but also to manage the possibly competitive interactions between a human and the motor intervention. Managing the competitive/cooperative nature of the interactions is crucial for applications in which we wish to control physical aspects of the cycling behavior (e.g. heart rate and breathing rate). The basis of the control is a pitchfork bifurcation system, modeling the interactions, augmented using ideas from gain-scheduling. In vivo experiments have been conducted, showing the effectiveness of the proposed control strategy.
△ Less
Submitted 23 September, 2021;
originally announced September 2021.
-
Thermal performance of GaInSb quantum well lasers for silicon photonics applications
Authors:
Christopher R. Fitch,
Graham W. Read,
Igor P. Marko,
Dominic A. Duffy,
Laurent Cerutti,
Jean-Baptiste Rodriguez,
Eric Tournié,
Stephen J. Sweeney
Abstract:
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 $μ$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon. In this study, silicon-compatible strained Ga$_{0.8}$In$_{0.2}$Sb/Al$_{0.35}$Ga$_{0.65}$As$_{0.03}$Sb$_{0.97}$ composite quantum well (CQW) lasers grown on GaSb subs…
▽ More
A key component for the realization of silicon-photonics are integrated lasers operating in the important communications band near 1.55 $μ$m. One approach is through the use of GaSb-based alloys which may be grown directly on silicon. In this study, silicon-compatible strained Ga$_{0.8}$In$_{0.2}$Sb/Al$_{0.35}$Ga$_{0.65}$As$_{0.03}$Sb$_{0.97}$ composite quantum well (CQW) lasers grown on GaSb substrates emitting at 1.55 $μ$m have been developed and investigated in terms of their thermal performance. Variable temperature and high-pressure techniques were used to investigate the influence of device design on performance. These measurements show that the temperature dependence of the devices is dominated by carrier leakage to the X minima of the Al$_{0.35}$Ga$_{0.65}$As$_{0.03}$Sb$_{0.97}$ barrier layers accounting for up to 43% of the threshold current at room temperature. Improvement in device performance may be possible through refinements in the CQW design, while carrier confinement may be improved by optimization of the barrier layer composition. This investigation provides valuable design insights for the monolithic integration of GaSb-based lasers on silicon.
△ Less
Submitted 24 December, 2020;
originally announced December 2020.
-
Performance characteristics of low threshold current 1.25-μm type-II GaInAs/GaAsSb W-lasers for optical communications
Authors:
Dominic A. Duffy,
Igor P. Marko,
Christian Fuchs,
Timothy D. Eales,
Jannik Lehr,
Wolfgang Stolz,
Stephen J. Sweeney
Abstract:
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range. (GaIn)As/Ga(AsSb) type-II W structures emitting at 1255 nm have been realised on a GaAs substrate and exhibit low room temperature threshold current densities of 200-300…
▽ More
Type-II W-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range. (GaIn)As/Ga(AsSb) type-II W structures emitting at 1255 nm have been realised on a GaAs substrate and exhibit low room temperature threshold current densities of 200-300 Acm$^{-2}$, pulsed output powers exceeding 1 W for 100 $μ$m wide stripes, and a characteristic temperature T${_0}$${\approx}$90 K around room temperature. Optical gain studies indicate a high modal gain around 15-23 cm$^{-1}$ at 200-300 Acm$^{-2}$ and low optical losses of 8 ${\pm}$ 3 cm$^{-1}$. Analysis of the spontaneous emission indicates that at room temperature, up to 24% of the threshold current is due to radiative recombination, with the remaining current due to other thermally activated non-radiative processes. The observed decrease in differential quantum efficiency with increasing temperature suggests that this is primarily due to a carrier leakage process. The impact of these processes is discussed in terms of the potential for further device optimisation. Our results present strong figures of merit for near-infrared type-II laser diodes and indicate significant potential for their applications in optical communications.
△ Less
Submitted 29 November, 2020;
originally announced November 2020.
-
Auger Recombination Coefficients in Type-I Mid-Infrared InGaAsSb Quantum Well Lasers
Authors:
Timothy D. Eales,
Igor P. Marko,
Alfred R. Adams,
Jerry R. Meyer,
Igor Vurgaftman,
Stephen J. Sweeney
Abstract:
From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 $μ$m wavelength range. From hydrostatic pressure measureme…
▽ More
From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 $μ$m wavelength range. From hydrostatic pressure measurements, the non-radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. We observe a minimum in the Auger rate around 2.1 $μ$m. A strong increase with decreasing mid-infrared wavelength (< 2 $μ$m) indicates the prominent role of inter-valence Auger transitions to the split-off hole band (CHSH process). Above 2 $μ$m, the increase with wavelength is approximately exponential due to CHCC or CHLH Auger recombination, limiting long wavelength operation. The observed dependence is consistent with that derived by analysing literature values of lasing thresholds for type-I InGaAsSb quantum well diodes. Over the wavelength range considered, the Auger coefficient varies from a minimum of $\leq$ 1x10$ ^{16}$cm$^{4}$s$^{-1}$ at 2.1 $μ$m to ~8x10$^{16}$cm$^{4}$s$^{-1}$ at 3.2 $μ$m.
△ Less
Submitted 28 June, 2020;
originally announced June 2020.
-
Theory and design of In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 $μ$m on InP substrates
Authors:
Christopher A. Broderick,
Wanshu Xiong,
Stephen J. Sweeney,
Eoin P. O'Reilly,
Judy M. Rorison
Abstract:
We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering.…
▽ More
We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering. Our calculations demonstrate that structures based on compressively strained In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ quantum wells (QWs) can readily achieve emission wavelengths in the 3 -- 5 $μ$m range, and that these QWs have large type-I band offsets. As such, these structures have the potential to overcome a number of limitations commonly associated with this application-rich but technologically challenging wavelength range. By considering structures having (i) fixed QW thickness and variable strain, and (ii) fixed strain and variable QW thickness, we quantify key trends in the properties and performance as functions of the alloy composition, structural properties, and emission wavelength, and on this basis identify routes towards the realisation of optimised devices for practical applications. Our analysis suggests that simple laser structures -- incorporating In$_{x}$Ga$_{1-x}$As$_{1-y}$Bi$_{y}$ QWs and unstrained ternary In$_{0.53}$Ga$_{0.47}$As barriers -- which are compatible with established epitaxial growth, provide a route to realising InP-based mid-infrared diode lasers.
△ Less
Submitted 14 May, 2018;
originally announced May 2018.
-
Valence band-anticrossing in GaP$_{1-x}$Bi$_{x}$ dilute bismide alloys: giant bowing of the band gap and spin-orbit splitting energy
Authors:
Zoe L. Bushell,
Christopher A. Broderick,
Lukas Nattermann,
Rita M. Joseph,
Joseph L. Keddie,
Judy M. Rorison,
Kerstin Volz,
Stephen J. Sweeney
Abstract:
Using spectroscopic ellipsometry measurements on GaP$_{1-x}$Bi$_{x}$/GaP epitaxial layers up to $x = 3.7$% we observe a giant bowing of the direct band gap ($E_{g}^Γ$) and valence band spin-orbit splitting energy ($Δ_{\textrm{SO}}$). $E_{g}^Γ$ ($Δ_{\textrm{SO}}$) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than f…
▽ More
Using spectroscopic ellipsometry measurements on GaP$_{1-x}$Bi$_{x}$/GaP epitaxial layers up to $x = 3.7$% we observe a giant bowing of the direct band gap ($E_{g}^Γ$) and valence band spin-orbit splitting energy ($Δ_{\textrm{SO}}$). $E_{g}^Γ$ ($Δ_{\textrm{SO}}$) is measured to decrease (increase) by approximately 200 meV (240 meV) with the incorporation of 1% Bi, corresponding to a greater than fourfold increase in $Δ_{\textrm{SO}}$ in going from GaP to GaP$_{0.99}$Bi$_{0.01}$. The evolution of $E_{g}^Γ$ and $Δ_{\textrm{SO}}$ with $x$ is characterised by strong, composition-dependent bowing. We demonstrate that a simple valence band-anticrossing model, parametrised directly from atomistic supercell calculations, quantitatively describes the measured evolution of $E_{g}^Γ$ and $Δ_{\textrm{SO}}$ with $x$. In contrast to the well-studied GaAs$_{1-x}$Bi$_{x}$ alloy, in GaP$_{1-x}$Bi$_{x}$ substitutional Bi creates localised impurity states lying energetically within the GaP host matrix band gap. This leads to the emergence of an optically active band of Bi-hybridised states, accounting for the overall large bowing of $E_{g}^Γ$ and $Δ_{\textrm{SO}}$ and in particular for the giant bowing observed for $x \lesssim 1$%. Our analysis provides insight into the action of Bi as an isovalent impurity, and constitutes the first detailed experimental and theoretical analysis of the GaP$_{1-x}$Bi$_{x}$ alloy band structure.
△ Less
Submitted 24 October, 2017;
originally announced October 2017.
-
A context-aware e-bike system to reduce pollution inhalation while cycling
Authors:
Shaun Sweeney,
Rodrigo Ordonez-Hurtado,
Francesco Pilla,
Giovanni Russo,
David Timoney,
Robert Shorten
Abstract:
The effect of transport-related pollution on human health is fast becoming recognised as a major issue in cities worldwide. Cyclists, in particular, face great risks, as they typically are most exposed to tail-pipe emissions. Three avenues are being explored worldwide in the fight against urban pollution: (i) outright bans on polluting vehicles and embracing zero tailpipe emission vehicles; (ii) m…
▽ More
The effect of transport-related pollution on human health is fast becoming recognised as a major issue in cities worldwide. Cyclists, in particular, face great risks, as they typically are most exposed to tail-pipe emissions. Three avenues are being explored worldwide in the fight against urban pollution: (i) outright bans on polluting vehicles and embracing zero tailpipe emission vehicles; (ii) measuring air-quality as a means to better informing citizens of zones of higher pollution; and (iii) developing smart mobility devices that seek to minimize the effect of polluting devices on citizens as they transport goods and individuals in our cities. Following this latter direction, in this paper we present a new way to protect cyclists from the effect of urban pollution. Namely, by exploiting the actuation possibilities afforded by pedelecs or e-bikes (electric bikes), we design a cyber-physical system that mitigates the effect of urban pollution by indirectly controlling the breathing rate of cyclists in polluted areas. Results from a real device are presented to illustrate the efficacy of our system.
△ Less
Submitted 24 April, 2018; v1 submitted 2 June, 2017;
originally announced June 2017.
-
High-Q photonic crystal cavities in all-semiconductor photonic-crystal heterostructures
Authors:
Zoe Bushell,
Marian Florescu,
Stephen Sweeney
Abstract:
Photonic crystal cavities enable the realization of high Q-factor and low mode-volume resonators, with typical architectures consisting of a thin suspended periodically-patterned layer to maximize confinement of light by strong index guiding. We investigate a heterostructure-based approach comprising a high refractive index core and lower refractive index cladding layers. Whilst confinement typica…
▽ More
Photonic crystal cavities enable the realization of high Q-factor and low mode-volume resonators, with typical architectures consisting of a thin suspended periodically-patterned layer to maximize confinement of light by strong index guiding. We investigate a heterostructure-based approach comprising a high refractive index core and lower refractive index cladding layers. Whilst confinement typically decreases with decreasing index contrast between the core and cladding layers, we show that, counter-intuitively, due to the confinement provided by the photonic band structure in the cladding layers, it becomes possible to achieve Q-factors $>10^4$ with only a small refractive index contrast. This opens up new opportunities for implementing high Q-factor cavities in conventional semiconductor heterostructures, with direct applications to the design of electrically-pumped nano-cavity lasers using conventional fabrication approaches.
△ Less
Submitted 1 June, 2017;
originally announced June 2017.
-
Minimal spanning trees at the percolation threshold: a numerical calculation
Authors:
Sean M. Sweeney,
A. Alan Middleton
Abstract:
The fractal dimension of minimal spanning trees on percolation clusters is estimated for dimensions $d$ up to $d=5$. A robust analysis technique is developed for correlated data, as seen in such trees. This should be a robust method suitable for analyzing a wide array of randomly generated fractal structures. The trees analyzed using these techniques are built using a combination of Prim's and Kru…
▽ More
The fractal dimension of minimal spanning trees on percolation clusters is estimated for dimensions $d$ up to $d=5$. A robust analysis technique is developed for correlated data, as seen in such trees. This should be a robust method suitable for analyzing a wide array of randomly generated fractal structures. The trees analyzed using these techniques are built using a combination of Prim's and Kruskal's algorithms for finding minimal spanning trees. This combination reduces memory usage and allows for simulation of larger systems than would otherwise be possible. The path length fractal dimension $d_{s}$ of MSTs on critical percolation clusters is found to be compatible with the predictions of the perturbation expansion developed by T.S.Jackson and N.Read [T.S.Jackson and N.Read, Phys.\ Rev.\ E \textbf{81}, 021131 (2010)].
△ Less
Submitted 28 June, 2013;
originally announced July 2013.
-
Impact of alloy disorder on the band structure of compressively strained GaBiAs
Authors:
Muhammad Usman,
Christopher A. Broderick,
Zahida Batool,
Konstanze Hild,
Thomas J. C. Hosea,
Stephen J. Sweeney,
Eoin P. O'Reilly
Abstract:
The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy (E$_g$) accompanied with a large increase in the spin-orbit splitting energy ($\bigtriangleup_{SO}$), leading to the condition that $\bigtriangleup_{SO} > E_g$ which is anticipated to reduce so-called CHSH Auger recombination losses whereby the energy and momentum of a recombining electron-hole pair is gi…
▽ More
The incorporation of bismuth (Bi) in GaAs results in a large reduction of the band gap energy (E$_g$) accompanied with a large increase in the spin-orbit splitting energy ($\bigtriangleup_{SO}$), leading to the condition that $\bigtriangleup_{SO} > E_g$ which is anticipated to reduce so-called CHSH Auger recombination losses whereby the energy and momentum of a recombining electron-hole pair is given to a second hole which is excited into the spin-orbit band. We theoretically investigate the electronic structure of experimentally grown GaBi$_x$As$_{1-x}$ samples on (100) GaAs substrates by directly comparing our data with room temperature photo-modulated reflectance (PR) measurements. Our atomistic theoretical calculations, in agreement with the PR measurements, confirm that E$_g$ is equal to $\bigtriangleup_{SO}$ for $\textit{x} \approx$ 9$%$. We then theoretically probe the inhomogeneous broadening of the interband transition energies as a function of the alloy disorder. The broadening associated with spin-split-off transitions arises from conventional alloy effects, while the behaviour of the heavy-hole transitions can be well described using a valence band-anticrossing model. We show that for the samples containing 8.5% and 10.4% Bi the difficulty in identifying a clear light-hole-related transition energy from the measured PR data is due to the significant broadening of the host matrix light-hole states as a result of the presence of a large number of Bi resonant states in the same energy range and disorder in the alloy. We further provide quantitative estimates of the impact of supercell size and the assumed random distribution of Bi atoms on the interband transition energies in GaBi$_{x}$As$_{1-x}$. Our calculations support a type-I band alignment at the GaBi$_x$As$_{1-x}$/GaAs interface, consistent with recent experimental findings.
△ Less
Submitted 5 March, 2013;
originally announced March 2013.
-
Band engineering in dilute nitride and bismide semiconductor lasers
Authors:
Christopher A. Broderick,
Muhammad Usman,
Stephen J. Sweeney,
Eoin P. O'Reilly
Abstract:
Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial p…
▽ More
Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecomm lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to efficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption.
△ Less
Submitted 31 August, 2012;
originally announced August 2012.
