Graphene Enhanced Resonant Raman Spectroscopy of Gallium Nitride Nanocrystals
Authors:
Marek Kostka,
Jindřich Mach,
Miroslav Bartošík,
David Nezval,
Martin Konečný,
Vojtěch Mikerásek,
Linda Supalová,
Jakub Piastek,
Tomáš Šikola
Abstract:
The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN nanocrystals, further enhanced by the underlying graphene. Raman spectroscopy using various excitation energies shows how the exciton-phonon interaction behaves, unve…
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The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN nanocrystals, further enhanced by the underlying graphene. Raman spectroscopy using various excitation energies shows how the exciton-phonon interaction behaves, unveiling the scattering strength. The origin of the interaction is in the condition of resonance, which is directly observed in the temperature resolved spectra. Most importantly, the underlying graphene strongly enhances the coupling of phonons and excitons. Consequently, an enhanced resonant Raman spectrum of GaN nanocrystals possessing clearly observable phonon overtones up to the 4th order has been obtained. It has been demonstrated that the responsible effect is the electron transfer between nanocrystals and the underlying graphene. The utilization of such an increased coupling effect can be beneficial for a study of the charge carrier scattering in semiconducting nanomaterials, analysis of their crystal quality, improvement of sensor sensitivity and in the subsequent development of new-generation optoelectronic devices.
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Submitted 25 April, 2025;
originally announced April 2025.
