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Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
Authors:
N. I. Dumoulin Stuyck,
R. Li,
C. Godfrin,
A. Elsayed,
S. Kubicek,
J. Jussot,
B. T. Chan,
F. A. Mohiyaddin,
M. Shehata,
G. Simion,
Y. Canvel,
L. Goux,
M. Heyns,
B. Govoreanu,
I. P. Radu
Abstract:
Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an 'all-Silicon' and lithographically flexible 300mm flow. Low-disorder Si/SiO…
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Larger arrays of electron spin qubits require radical improvements in fabrication and device uniformity. Here we demonstrate excellent qubit device uniformity and tunability from 300K down to mK temperatures. This is achieved, for the first time, by integrating an overlapping polycrystalline silicon-based gate stack in an 'all-Silicon' and lithographically flexible 300mm flow. Low-disorder Si/SiO$_2$ is proved by a 10K Hall mobility of $1.5 \cdot 10^4$ $cm^2$/Vs. Well-controlled sensors with low charge noise (3.6 $μ$eV/$\sqrt{\mathrm{Hz}}$ at 1 Hz) are used for charge sensing down to the last electron. We demonstrate excellent and reproducible interdot coupling control over nearly 2 decades (2-100 GHz). We show spin manipulation and single-shot spin readout, extracting a valley splitting energy of around 150 $μ$eV. These low-disorder, uniform qubit devices and 300mm fab integration pave the way for fast scale-up to large quantum processors.
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Submitted 24 August, 2021;
originally announced August 2021.
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Low dephasing and robust micromagnet designs for silicon spin qubits
Authors:
N. I. Dumoulin Stuyck,
F. A. Mohiyaddin,
R. Li,
M. Heyns,
B. Govoreanu,
I. P. Radu
Abstract:
Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes q…
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Using micromagnets to enable electron spin manipulation in silicon qubits has emerged as a very popular method, enabling single-qubit gate fidelities larger than 99:9%. However, these micromagnets also apply stray magnetic field gradients onto the qubits, making the spin states susceptible to electric field noise and limiting their coherence times. We describe here a magnet design that minimizes qubit dephasing, while allowing for fast qubit control and addressability. Specifically, we design and optimize magnet dimensions and position relative to the quantum dots, minimizing dephasing from magnetic field gradients. The micromagnet-induced dephasing rates with this design are up to 3-orders of magnitude lower than state-of-the-art implementations, allowing for long coherence times. This design is robust against fabrication errors, and can be combined with a wide variety of silicon qubit device geometries, thereby allowing exploration of coherence limiting factors and novel upscaling approaches.
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Submitted 24 August, 2021;
originally announced August 2021.
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A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
Authors:
R. Li,
N. I. Dumoulin Stuyck,
S. Kubicek,
J. Jussot,
B. T. Chan,
F. A. Mohiyaddin,
A. Elsayed,
M. Shehata,
G. Simion,
C. Godfrin,
Y. Canvel,
Ts. Ivanov,
L. Goux,
B. Govoreanu,
I. P. Radu
Abstract:
We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are charact…
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We report on a flexible 300 mm process that optimally combines optical and electron beam lithography to fabricate silicon spin qubits. It enables on-the-fly layout design modifications while allowing devices with either n- or p-type ohmic implants, a pitch smaller than 100 nm, and uniform critical dimensions down to 30 nm with a standard deviation ~ 1.6 nm. Various n- and p-type qubits are characterized in a dilution refrigerator at temperatures ~ 10 mK. Electrical measurements demonstrate well-defined quantum dots, tunable tunnel couplings, and coherent spin control, which are essential requirements for the implementation of a large-scale quantum processor.
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Submitted 7 February, 2021;
originally announced February 2021.
