Atomistic deformation mechanism of silicon under laser-driven shock compression
Authors:
S. Pandolfi,
S. Brennan Brown,
P. G. Stubley,
A. Higginbotham,
C. A. Bolme,
H. J. Lee,
B. Nagler,
E. Galtier,
R. Sandberg,
W. Yang,
W. L. Mao,
J. S. Wark,
A. Gleason
Abstract:
Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely used semiconductor, constituting the basis of modern electronic devices. Despite extensive study, some properties of Si remain elusive. For example, the behaviour of Si under high pressure, in particular at the ultra-high strain rates characteristic of dynamic compression, has been a matter of debat…
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Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely used semiconductor, constituting the basis of modern electronic devices. Despite extensive study, some properties of Si remain elusive. For example, the behaviour of Si under high pressure, in particular at the ultra-high strain rates characteristic of dynamic compression, has been a matter of debate for decades. A detailed understanding of how Si deforms is crucial for a variety of fields, ranging from planetary science to materials design. Simulations suggest that in Si the shear stress generated during shock compression is released inelastically, i.e., via a high-pressure phase transition, challenging the classical picture of relaxation via defect-mediated plasticity. However, experiments at the short timescales characteristic of shock compression are challenging, and direct evidence supporting either deformation mechanism remain elusive. Here, we use sub-picosecond, highly-monochromatic x-ray diffraction to study (100)-oriented single-crystal Si under laser-driven shock compression. We provide the first unambiguous, time-resolved picture of Si deformation at ultra-high strain rates, demonstrating the predicted inelastic shear release. Our results resolve the longstanding controversy on silicon deformation under dynamic compression, and provide direct proof of strain rate-dependent deformation mechanisms in a non-metallic system, which is key for the study of planetary-relevant materials.
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Submitted 15 November, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
Single Hit Energy-resolved Laue Diffraction
Authors:
Shamim Patel,
Matthew J. Suggit,
Paul G. Stubley,
James A. Hawreliak,
Orlando Ciricosta,
Andrew J. Comley,
Gilbert W. Collins,
Jon H. Eggert,
John M. Foster,
Justin S. Wark,
Andrew Higginbotham
Abstract:
In-situ white light Laue diffraction has been successfully used to interrogate the structure of single crystal materials undergoing rapid (nanosecond) dynamic compression up to megabar pressures. However, information on strain state accessible via this technique is limited, reducing its applicability for a range of applications. We present an extension to the existing Laue diffraction platform in…
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In-situ white light Laue diffraction has been successfully used to interrogate the structure of single crystal materials undergoing rapid (nanosecond) dynamic compression up to megabar pressures. However, information on strain state accessible via this technique is limited, reducing its applicability for a range of applications. We present an extension to the existing Laue diffraction platform in which we record the photon energy of a subset of diffraction peaks. This allows for a measurement of the longitudinal and transverse strains in-situ during compression. Consequently, we demonstrate measurement of volumetric compression of the unit cell, in addition to the limited aspect ratio information accessible in conventional white light Laue. We present preliminary results for silicon, where only an elastic strain is observed. VISAR measurements show the presence of a two wave structure and measurements show that material downstream of the second wave does not contribute to the observed diffraction peaks, supporting the idea that this material may be highly disordered, or has undergone large scale rotation.
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Submitted 31 May, 2015; v1 submitted 17 March, 2015;
originally announced March 2015.
