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Showing 1–2 of 2 results for author: Stubley, P G

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  1. Atomistic deformation mechanism of silicon under laser-driven shock compression

    Authors: S. Pandolfi, S. Brennan Brown, P. G. Stubley, A. Higginbotham, C. A. Bolme, H. J. Lee, B. Nagler, E. Galtier, R. Sandberg, W. Yang, W. L. Mao, J. S. Wark, A. Gleason

    Abstract: Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely used semiconductor, constituting the basis of modern electronic devices. Despite extensive study, some properties of Si remain elusive. For example, the behaviour of Si under high pressure, in particular at the ultra-high strain rates characteristic of dynamic compression, has been a matter of debat… ▽ More

    Submitted 15 November, 2021; v1 submitted 10 June, 2021; originally announced June 2021.

  2. arXiv:1503.05131  [pdf, other

    cond-mat.mtrl-sci

    Single Hit Energy-resolved Laue Diffraction

    Authors: Shamim Patel, Matthew J. Suggit, Paul G. Stubley, James A. Hawreliak, Orlando Ciricosta, Andrew J. Comley, Gilbert W. Collins, Jon H. Eggert, John M. Foster, Justin S. Wark, Andrew Higginbotham

    Abstract: In-situ white light Laue diffraction has been successfully used to interrogate the structure of single crystal materials undergoing rapid (nanosecond) dynamic compression up to megabar pressures. However, information on strain state accessible via this technique is limited, reducing its applicability for a range of applications. We present an extension to the existing Laue diffraction platform in… ▽ More

    Submitted 31 May, 2015; v1 submitted 17 March, 2015; originally announced March 2015.