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Formation mechanism, stability and role of zinc and sulfur vacancies on the electronic properties and optical response of ZnS
Authors:
P. R. A de Oliveira,
L. Lima,
G. Felix,
P. Venezuela,
F. Stavale
Abstract:
Combining experimental and theoretical tools, we report that Zn vacanciesplay an important role in the electronic and optical responses of ZnS sphalerite. The defective surface of ZnS (001) single crystal prepared in ultra-highvacuum conditions, has been shown to exhibit a semiconducting character instead of the insulating properties of the pristine structure, as revealed by X-ray photoelectron sp…
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Combining experimental and theoretical tools, we report that Zn vacanciesplay an important role in the electronic and optical responses of ZnS sphalerite. The defective surface of ZnS (001) single crystal prepared in ultra-highvacuum conditions, has been shown to exhibit a semiconducting character instead of the insulating properties of the pristine structure, as revealed by X-ray photoelectron spectroscopy (XPS). Interestingly, this effect is attributed to the formation of zinc vacancies in the ZnS system, which also alter the optical response of the material, as supported by photoluminescence (PL) measurements comparing pristine and S-rich (Zn-poor) ZnS. To address these findings from a theoretical point of view, first principles calculations based on density functional theory (DFT) were performed. The optical properties of cation-defective ZnS were evaluated using random-phase approximation and hybrid functional DFT calculations. These calculations revealed absorption peaks in the visible range in the defective ZnS rather than solely in the ultra-violet range obtained for defect-free ZnS. The combination of this finding with joint density of states (JDOS) analysis explains the emergence of new luminescence peaks observed in the PL spectra of cation-defective ZnS. These findings highlight the role of Zn vacancies in tuning ZnS optical properties, making it a potential candidate for optoelectronic applications such as LEDs and photodetectors.
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Submitted 21 February, 2025;
originally announced February 2025.
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Zinc blende ZnS (001) surface structure investigated by XPS,LEED and DFT
Authors:
Pablo Oliveira,
Corinne Arrouvel,
Fernando Stavale
Abstract:
The formation and stability of a sulfur-rich surface of the zinc blende ZnS (001) single crystal have been examined by x-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and density-functional theory (DFT) calculations. LEED patterns obtained from ZnS (001) surface prepared in ultrahigh vacuum conditions are compatible to the formation of the ($1 \times 2$) reconstruct…
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The formation and stability of a sulfur-rich surface of the zinc blende ZnS (001) single crystal have been examined by x-ray photoemission spectroscopy (XPS), low-energy electron diffraction (LEED), and density-functional theory (DFT) calculations. LEED patterns obtained from ZnS (001) surface prepared in ultrahigh vacuum conditions are compatible to the formation of the ($1 \times 2$) reconstruction. Further XPS investigation is consistent with the conversion of the surface region into a sulfur-rich surface. DFT calculations support the S-richer ZnS surface hypothesis and the indirect notion of increasing in the conductivity of such a new structure.
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Submitted 13 July, 2023;
originally announced July 2023.
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Training-induced inversion of spontaneous exchange bias field on La1.5Ca0.5CoMnO6
Authors:
L. Bufaical,
R. Finkler,
L. T. Coutrim,
P. G. Pagliuso,
C. Grossi,
F. Stavale,
E. Baggio-Saitovitch,
E. M. Bittar
Abstract:
In this work we report the synthesis and structural, electronic and magnetic properties of La1.5Ca0.5CoMnO6 double-perovskite. This is a re-entrant spin cluster material which exhibits a non-negligible negative exchange bias effect when it is cooled in zero magnetic field from an unmagnetized state down to low temperature. X-ray powder diffraction, X-ray photoelectron spectroscopy and magnetometry…
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In this work we report the synthesis and structural, electronic and magnetic properties of La1.5Ca0.5CoMnO6 double-perovskite. This is a re-entrant spin cluster material which exhibits a non-negligible negative exchange bias effect when it is cooled in zero magnetic field from an unmagnetized state down to low temperature. X-ray powder diffraction, X-ray photoelectron spectroscopy and magnetometry results indicate mixed valence state at Co site, leading to competing magnetic phases and uncompensated spins at the magnetic interfaces. We compare the results for this Ca-doped material with those reported for the resemblant compound La1.5Sr0.5CoMnO6, and discuss the much smaller spontaneous exchange bias effect observed for the former in terms of its structural and magnetic particularities. For La1.5Ca0.5CoMnO6, when successive magnetization loops are carried, the spontaneous exchange bias field inverts its sign from negative to positive from the first to the second measurement. We discuss this behavior based on the disorder at the magnetic interfaces, related to the presence of a glassy phase. This compound also exhibits a large conventional exchange bias, for which there is no sign inversion of the exchange bias field for consecutive cycles.
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Submitted 12 January, 2017;
originally announced January 2017.
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Compensation temperatures and exchange bias in La1.5Ca0.5CoIrO6
Authors:
L. T. Coutrim,
E. M. Bittar,
F. Stavale,
F. Garcia,
E. Baggio-Saitovitch,
M. Abbate,
R. J. O. Mossanek,
H. P. Martins,
D. Tobia,
P. G. Pagliuso,
L. Bufaiçal
Abstract:
We report on the study of magnetic properties of the La1.5Ca0.5CoIrO6 double perovskite. Via ac magnetic susceptibility we have observed evidence of weak ferromagnetism and reentrant spin glass behavior on an antiferromagnetic matrix. Regarding the magnetic behavior as a function of temperature, we have found that the material displays up to three inversions of its magnetization, depending on the…
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We report on the study of magnetic properties of the La1.5Ca0.5CoIrO6 double perovskite. Via ac magnetic susceptibility we have observed evidence of weak ferromagnetism and reentrant spin glass behavior on an antiferromagnetic matrix. Regarding the magnetic behavior as a function of temperature, we have found that the material displays up to three inversions of its magnetization, depending on the appropriate choice of the applied magnetic field. At low temperature the material exhibit exchange bias effect when it is cooled in the presence of a magnetic field. Also, our results indicate that this effect may be observed even when the system is cooled at zero field. Supported by other measurements and also by electronic structure calculations, we discuss the magnetic reversals and spontaneous exchange bias effect in terms of magnetic phase separation and magnetic frustration of Ir4+ ions located between the antiferromagnetically coupled Co ions.
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Submitted 18 May, 2016; v1 submitted 26 April, 2016;
originally announced April 2016.
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Quantifying defects in graphene via Raman spectroscopy at different excitation energies
Authors:
L. G. Cançado,
A. Jorio,
E. H. Martins Ferreira,
F. Stavale,
C. A. Achete,
R. B. Capaz,
M. V. O. Moutinho,
A. Lombardo,
T. Kulmala,
A. C. Ferrari
Abstract:
We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in g…
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We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.
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Submitted 3 May, 2011; v1 submitted 1 May, 2011;
originally announced May 2011.
