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Layer-dependent optically-induced spin polarization in InSe
Authors:
Jovan Nelson,
Teodor K. Stanev,
Dmitry Lebedev,
Trevor LaMountain,
J. Tyler Gish,
Hongfei Zeng,
Hyeondeok Shin,
Olle Heinonen,
Kenji Watanabe,
Takashi Taniguchi,
Mark C. Hersam,
Nathaniel P. Stern
Abstract:
Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for opto-electronics due to its high electron mobility…
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Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semiconductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for opto-electronics due to its high electron mobility, tunable direct bandgap, and quantum transport. There are predictions of spin-dependent optical selection rules suggesting potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the $g$-factor for InSe was extracted. Further investigations are done by calculating precession values using a $\textbf{k} \cdot \textbf{p}$ model, which is supported by \textit{ab-initio} density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. Optical orientation of spin is an important prerequisite for opto-spintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material.
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Submitted 11 December, 2022;
originally announced December 2022.
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Spatial Mapping of Electrostatics and Dynamics across 2D Heterostructures
Authors:
Akshay A. Murthy,
Stephanie M. Ribet,
Teodor K. Stanev,
Pufan Liu,
Kenji Watanabe,
Takashi Taniguchi,
Nathaniel P. Stern,
Roberto dos Reis,
Vinayak P. Dravid
Abstract:
In situ electron microscopy is a key tool for understanding the mechanisms driving novel phenomena in 2D structures. Unfortunately, due to various practical challenges, technologically relevant 2D heterostructures prove challenging to address with electron microscopy. Here, we use the differential phase contrast imaging technique to build a methodology for probing local electrostatic fields during…
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In situ electron microscopy is a key tool for understanding the mechanisms driving novel phenomena in 2D structures. Unfortunately, due to various practical challenges, technologically relevant 2D heterostructures prove challenging to address with electron microscopy. Here, we use the differential phase contrast imaging technique to build a methodology for probing local electrostatic fields during electrical operation with nanoscale precision in such materials. We find that by combining a traditional DPC setup with a high pass filter, we can largely eliminate electric fluctuations emanating from short-range atomic potentials. With this method, a priori electric field expectations can be directly compared with experimentally derived values to readily identify inhomogeneities and potentially problematic regions. We use this platform to analyze the electric field and charge density distribution across layers of hBN and MoS2.
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Submitted 22 April, 2021; v1 submitted 26 December, 2020;
originally announced December 2020.
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Direct Visualization of Electric Field induced Structural Dynamics in Monolayer Transition Metal Dichalcogenides
Authors:
Akshay A. Murthy,
Teodor K. Stanev,
Roberto dos Reis,
Shiqiang Hao,
Chris Wolverton,
Nathaniel P. Stern,
Vinayak P. Dravid
Abstract:
Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order…
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Layered transition metal dichalcogenides (TMDs) offer many attractive features for next-generation low-dimensional device geometries. Due to the practical and fabrication challenges related to in situ methods, the atomistic dynamics that give rise to realizable macroscopic device properties are often unclear. In this study, in situ transmission electron microscopy techniques are utilized in order to understand the structural dynamics at play, especially at interfaces and defects, in the prototypical film of monolayer MoS2 under electrical bias. Through our sample fabrication process, we clearly identify the presence of mass transport in the presence of a lateral electric field. In particular, we observe that the voids present at grain boundaries combine to induce structural deformation. The electric field mediates a net vacancy flux from the grain boundary interior to the exposed surface edge sites that leaves molybdenum clusters in its wake. Following the initial biasing cycles, however, the mass flow is largely diminished, and the resultant structure remains stable over repeated biasing. We believe insights from this work can help explain observations of non-uniform heating and preferential oxidation at grain boundary sites in these materials.
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Submitted 11 February, 2020; v1 submitted 7 October, 2019;
originally announced October 2019.
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Valley-selective optical Stark effect probed by Kerr rotation
Authors:
Trevor LaMountain,
Hadallia Bergeron,
Itamar Balla,
Teodor K. Stanev,
Mark C. Hersam,
Nathaniel P. Stern
Abstract:
The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS$_2$ and WSe$_2$ using ultrafast optical pulses. Despite these advances, under…
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The ability to monitor and control distinct states is at the heart of emerging quantum technologies. The valley pseudospin in transition metal dichalcogenide (TMDC) monolayers is a promising degree of freedom for such control, with the optical Stark effect allowing for valley-selective manipulation of energy levels in WS$_2$ and WSe$_2$ using ultrafast optical pulses. Despite these advances, understanding of valley-sensitive optical Stark shifts in TMDCs has been limited by reflectance-based detection methods where the signal is small and prone to background effects. More sensitive polarization-based spectroscopy is required to better probe ultrafast Stark shifts for all-optical manipulation of valley energy levels. Here, we show time-resolved Kerr rotation to be a more sensitive probe of the valley-selective optical Stark effect in monolayer TMDCs. Compared to the established time-resolved reflectance methods, Kerr rotation is less sensitive to background effects. Kerr rotation provides a five-fold improvement in the signal-to-noise ratio of the Stark effect optical signal and a more precise estimate of the energy shift. This increased sensitivity allows for observation of an optical Stark shift in monolayer MoS$_2$ that exhibits both valley- and energy-selectivity, demonstrating the promise of this method for investigating this effect in other layered materials and heterostructures.
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Submitted 26 October, 2017;
originally announced October 2017.
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Control of interlayer delocalization in 2H transition metal dichalcogenides
Authors:
Kuang-Chung Wang,
Teodor K. Stanev,
Daniel Valencia,
James Charles,
Alex Henning,
Vinod K. Sangwan,
Aritra Lahiri,
Daniel Mejia,
Prasad Sarangapani,
Michael Povolotskyi,
Aryan Afzalian,
Jesse Maassen,
Gerhard Klimeck,
Mark C. Hersam,
Lincoln J. Lauhon,
Nathaniel P. Stern,
Tillmann Kubis
Abstract:
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- ac…
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It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective devices. Gated transition metal dichalcogenide structures show electrons and holes to either localize in individual monolayers, or delocalize beyond multiple layers - depending on the balance between spin-orbit inter- action and interlayer hopping. This balance depends on layer thickness, momentum space symmetry points and applied gate fields. A good quantitative agreement of predictions and measurements of the quantum confined Stark effect in gated MoS2 systems unveils intralayer excitons as major source for the observed photoluminesence.
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Submitted 15 September, 2017; v1 submitted 6 March, 2017;
originally announced March 2017.
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Valley-Polarized Exciton-Polaritons in a Monolayer Semiconductor
Authors:
Yen-Jung Chen,
Jeffrey D. Cain,
Teodor K. Stanev,
Vinayak P. Dravid,
Nathaniel P. Stern
Abstract:
Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent superpositions of light and matter, exciton-polaritons, have been observed when these materials are strongly coupled to photons, but these hybrid quasiparticles do no…
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Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent superpositions of light and matter, exciton-polaritons, have been observed when these materials are strongly coupled to photons, but these hybrid quasiparticles do not harness the valley-sensitive excitations of monolayer transition metal dichalcogenides. Here, we demonstrate evidence for valley polarized exciton-polaritons in monolayers of MoS$_2$ embedded in a dielectric microcavity. Unlike traditional microcavity exciton-polaritons, these light-matter quasiparticles emit polarized light with spectral Rabi splitting. The interplay of cavity-modified exciton dynamics and intervalley relaxation in the high-cooperativity regime causes valley polarized exciton-polaritons to persist to room temperature, distinct from the vanishing polarization in bare monolayers. Achieving polarization-sensitive polaritonic devices operating at room temperature presents a pathway for manipulating novel valley degrees of freedom in coherent states of light and matter.
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Submitted 19 January, 2017;
originally announced January 2017.
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Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors
Authors:
Ying Jia,
Teodor K. Stanev,
Erik J. Lenferink,
Nathaniel P. Stern
Abstract:
Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers.…
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Energy band realignment at the interfaces between materials in heterostructures can give rise to unique electronic characteristics and non-trivial low-dimensional charge states. In a homojunction of monolayer and multilayer MoS$_2$, the thickness-dependent band structure implies the possibility of band realignment and a new interface charge state with properties distinct from the isolated layers. In this report, we probe the interface charge state using scanning photocurrent microscopy and gate-dependent transport with source-drain bias applied along the interface. Enhanced photoresponse observed at the interface is attributed to band bending. The effective conductivity of a material with a monolayer-multilayer interface of MoS$_2$ is demonstrated to be higher than that of independent monolayers or multilayers of MoS$_2$. A classic heterostructure model is constructed to interpret the electrical properties at the interface. Our work reveals that the band engineering at the transition metal dichalcogenides monolayer/multilayer interfaces can enhance the longitudinal conductance and field-effect mobility of the composite monolayer and multilayer devices.
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Submitted 12 December, 2016;
originally announced December 2016.
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Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots
Authors:
Guohua Wei,
David A. Czaplewski,
Erik J. Lenferink,
Teodor K. Stanev,
Il Woong Jung,
Nathaniel P. Stern
Abstract:
Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and sp…
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Three-dimensional confinement allows semiconductor quantum dots (QDs) to exhibit size-tunable electronic and optical properties that enable a wide range of opto-electronic applications from displays, solar cells and bio-medical imaging to single-electron devices. Additional modalities such as spin and valley properties can provide further degrees of freedom requisite for quantum information and spintronics. When seeking to combine these material features into QD structures, however, confinement can cause hybridization that inhibits the robustness of these emergent properties for insertion into quantum devices. Here, we show that a new class of laterally-confined materials, monolayer MoS$_2$ QDs, can be created through top-down nanopatterning of an atomically-thin two-dimensional semiconductor so that they exhibit the same valley polarization as in a continuous monolayer sheet. Semiconductor-compatible nanofabrication process allows for these low-dimensional materials to be integrated into complex systems, an important feature for advancing quantum information applications. The inherited bulk spin and valley properties, the size dependence of excitonic energies, and the ability to fabricate MoS$_2$ QDs using semiconductor-compatible processing suggest that monolayer semiconductor QDs have the potential to be multimodal building blocks of integrated quantum information and spintronics systems.
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Submitted 30 October, 2015;
originally announced October 2015.
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Silicon-nitride photonic circuits interfaced with monolayer MoS$_2$
Authors:
Guohua Wei,
Teodor K. Stanev,
David A. Czaplewski,
Il Woong Jung,
Nathaniel P. Stern
Abstract:
We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that…
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We report on the integration of monolayer molybdenum disulphide with silicon nitride microresonators assembled by visco-elastic layer transfer techniques. Evanescent coupling from the resonator mode to the monolayer is confirmed through measurements of cavity transmission. The absorption of the monolayer semiconductor flakes in this geometry is determined to be 850 dB/cm, which is larger than that of graphene and black phosphorus with the same thickness. This technique can be applied to diverse monolayer semiconductors for assembling hybrid optoelectronic devices such as photodetectors and modulators operating over a wide spectral range.
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Submitted 5 June, 2015;
originally announced June 2015.
