Element-specific, non-destructive profiling of layered heterostructures
Authors:
Nicolò D'Anna,
Jamie Bragg,
Elizabeth Skoropata,
Nazareth Ortiz Hernández,
Aidan G. McConnell,
Maël Clémence,
Hiroki Ueda,
Procopios C. Constantinou,
Kieran Spruce,
Taylor J. Z. Stock,
Sarah Fearn,
Steven R. Schofield,
Neil J. Curson,
Dario Ferreira Sanchez,
Daniel Grolimund,
Urs Staub,
Guy Matmon,
Simon Gerber,
Gabriel Aeppli
Abstract:
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high…
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Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, e.g. atomically thin dopant layers ($δ$-layers), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging.
Here, we present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the X-ray energy. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $δ$-layers within silicon, and show that the sub-nm electronic thickness of the $δ$-layers corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices. Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates.
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Submitted 2 October, 2024; v1 submitted 30 September, 2024;
originally announced October 2024.
Needle in a haystack: efficiently finding atomically defined quantum dots for electrostatic force microscopy
Authors:
José Bustamante,
Yoichi Miyahara,
Logan Fairgrieve-Park,
Kieran Spruce,
Patrick See,
Neil Curson,
Taylor Stock,
Peter Grutter
Abstract:
The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this work, we introduce a novel Atomic Force Microscope (AFM) instrument capable of measuring critical device dimensions, surface roughness, electrical sur…
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The ongoing development of single electron, nano and atomic scale semiconductor devices would benefit greatly from a characterization tool capable of detecting single electron charging events with high spatial resolution, at low temperature. In this work, we introduce a novel Atomic Force Microscope (AFM) instrument capable of measuring critical device dimensions, surface roughness, electrical surface potential, and ultimately the energy levels of quantum dots and single electron transistors in ultra miniaturized semiconductor devices. Characterization of nanofabricated devices with this type of instrument presents a challenge: finding the device. We therefore also present a process to efficiently find a nanometre size quantum dot buried in a $10 \times 10~\text{mm}^2$ silicon sample using a combination of optical positioning, capacitive sensors and AFM topography in vacuum.
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Submitted 20 March, 2024;
originally announced March 2024.
