Showing 1–8 of 8 results for author: Småbråten, D R

Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects

Authors: Jiali He, Ursula Ludacka, Kasper A. Hunnestad, Didrik R. Småbråten, Konstantin Shapovalov, Per Erik Vullum, Constantinos Hatzoglou, Donald M. Evans, Erik D. Roede, Zewu Yan, Edith Bourret, Sverre M. Selbach, David Gao, Jaakko Akola, Dennis Meier

Abstract: Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orde… ▽ More Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orders of magnitude. Here, we demonstrate local acceptor and donor doping in Er(Mn,Ti)O$_3$, facilitated by the splitting of such anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, we show that the oxygen defects readily move through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. Our findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general. △ Less

Submitted 11 February, 2025; originally announced February 2025.

Controlling electronic properties of hexagonal manganites through aliovalent doping and thermoatmospheric history

Authors: Didrik R. Småbråten, Frida H. Danmo, Nikolai H. Gaukås, Sathya P. Singh, Nikola Kanas, Dennis Meier, Kjell Wiik, Mari-Ann Einarsrud, Sverre M. Selbach

Abstract: The family of hexagonal manganites is intensively studied for its multiferroicity, magnetoelectric coupling, improper ferroelectricity, functional domain walls, and topology-related scaling behaviors. It is established that these physical properties are co-determined by the cation sublattices and that aliovalent doping can readily be leveraged to modify them. The doping, however, also impacts the… ▽ More The family of hexagonal manganites is intensively studied for its multiferroicity, magnetoelectric coupling, improper ferroelectricity, functional domain walls, and topology-related scaling behaviors. It is established that these physical properties are co-determined by the cation sublattices and that aliovalent doping can readily be leveraged to modify them. The doping, however, also impacts the anion defect chemistry and semiconducting properties, which makes the system highly sensitive to the synthesis and processing conditions. Here, we study the electronic properties of YMnO3 as function of aliovalent cation doping and thermoatmospheric history, combining density functional theory calculations with thermopower and thermogravimetric measurements. We show that the charge carrier concentration and transport properties can be controlled via both aliovalent cation dopants and anion defects, enabling reversible switching between n-type and p-type conductivity. This tunability is of importance for envisaged applications of hexagonal manganites in, e.g. next-generation capacitors and domain-wall nanoelectronics, or as catalysts or electrodes in fuel cells or electrolyzers. Furthermore, our approach is transferrable to other transition metal oxides, providing general guidelines for controlling their semiconducting properties. △ Less

Submitted 1 November, 2024; originally announced November 2024.

Comments: 6 figures

MSC Class: 82-10 ACM Class: J.2.9

Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

Authors: Michele Conroy, Didrik René Småbråten, Colin Ophus, Konstantin Shapovalov, Quentin M. Ramasse, Kasper Aas Hunnestad, Sverre M. Selbach, Ulrich Aschauer, Kalani Moore, J. Marty Gregg, Ursel Bangert, Massimiliano Stengel, Alexei Gruverman, Dennis Meier

Abstract: Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the disc… ▽ More Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the discovery of antiferroelectric domain walls in the uniaxial ferroelectric Pb$_{5}$Ge$_{3}$O$_{11}$. We resolve highly mobile domain walls with an alternating displacement of Pb atoms, resulting in a cyclic 180$^{\circ}$ flip of dipole direction within the wall. Density functional theory calculations reveal that Pb$_{5}$Ge$_{3}$O$_{11}$ is hyperferroelectric, allowing the system to overcome the depolarization fields that usually suppress antiparallel ordering of dipoles along the longitudinal direction. Interestingly, the antiferroelectric walls observed under the electron beam are energetically more costly than basic head-to-head or tail-to-tail walls. The results suggest a new type of excited domain-wall state, expanding previous studies on ferroelectric domain walls into the realm of antiferroic phenomena. △ Less

Submitted 5 September, 2023; originally announced September 2023.

Controlling local resistance via electric-field induced dislocations

Authors: D. M. Evans, D. R. Småbråten, T. S. Holstad, P. E. Vullum, A. B. Mosberg, Z. Yan, E. Bourret, A. T. J. Van Helvoort, S. M. Selbach, D. Meier

Abstract: Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations… ▽ More Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations is usually achieved via strain fields, applied either during growth [9,10] or retrospectively via deformation, e.g., (nano [11-14])-indentation [15]. Here we show how partial dislocations can be induced using local electric fields, altering the structure and electronic response of the material where the field is applied. By combining high-resolution imaging techniques and density functional theory calculations, we directly image these dislocations in the ferroelectric hexagonal manganite Er(Ti,Mn)O3 and study their impact on the local electric transport behaviour. The use of an electric field to induce partial dislocations is a conceptually new approach to the burgeoning field of emergent defect-driven phenomena and enables local property control without the need of external macroscopic strain fields. This control is an important step towards integrating and functionalising dislocations in practical devices for future oxide electronics. △ Less

Submitted 26 June, 2020; originally announced June 2020.

Comments: 20 pages, 7 figures

Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

Authors: J. Schultheiß, J. Schaab, D. R. Småbråten, S. H. Skjærvø, E. Bourret, Z. Yan, S. M. Selbach, D. Meier

Abstract: Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are… ▽ More Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are explained based on established segregation enthalpy profiles for oxygen vacancies and interstitials, providing a microscopic model for previous, seemingly disconnected observations ranging from insulating to conducting domain wall behavior. In addition, we observe variations in conductance between different nominally neutral walls that we attribute to deviations from the ideal charge-neutral structure within the bulk, leading to a superposition of extrinsic and intrinsic contributions. Our study clarifies the complex transport properties at nominally neutral domain walls in hexagonal manganites and establishes new possibilities for tuning their electronic response based on oxidation conditions, opening the door for domain-wall based sensor technology. △ Less

Submitted 30 March, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

Comments: 5 pages, 3 figures

Oxygen vacancies in bulk and at neutral domain walls in hexagonal YMnO$_3$

Authors: Sandra H. Skjærvø, Didrik R. Småbråten, Nicola A. Spaldin, Thomas Tybell, Sverre M. Selbach

Abstract: We use density functional calculations to investigate the accommodation and migration of oxygen vacancies in bulk hexagonal YMnO$_3$, and to study interactions between neutral ferroelectric domain walls and oxygen vacancies. Our calculations show that oxygen vacancies in bulk YMnO$_3$ are more stable in the Mn-O layers than in the Y-O layers. Migration barriers of the planar oxygen vacancies are h… ▽ More We use density functional calculations to investigate the accommodation and migration of oxygen vacancies in bulk hexagonal YMnO$_3$, and to study interactions between neutral ferroelectric domain walls and oxygen vacancies. Our calculations show that oxygen vacancies in bulk YMnO$_3$ are more stable in the Mn-O layers than in the Y-O layers. Migration barriers of the planar oxygen vacancies are high compared to oxygen vacancies in perovskites, and to previously reported values for oxygen interstitials in h-YMnO$_3$. The calculated polarization decreases linearly with vacancy concentration, while the out-of-plane lattice parameter expands in agreement with previous experiments. In contrast with ferroelectric perovskites, oxygen vacancies are found to be more stable in bulk than at domain walls. The tendency of oxygen vacancies to segregate away from neutral domain walls is explained by unfavorable Y-O bond lengths caused by the local strain field at the domain walls. △ Less

Submitted 4 July, 2018; originally announced July 2018.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 98, 184102 (2018)

Charged domain walls in improper ferroelectric hexagonal manganites and gallates

Authors: Didrik R. Småbråten, Quintin N. Meier, Sandra H. Skjærvø, Katherine Inzani, Dennis Meier, Sverre M. Selbach

Abstract: Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper fer… ▽ More Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper ferroelectric YMnO$_3$, InMnO$_3$ and YGaO$_3$ by first principles calculations and phenomenological modeling. Positively and negatively charged walls are asymmetric in terms of local structure and width, reflecting that polarization is not the driving force for domain formation. The wall width scales with the amplitude of the primary structural order parameter and the coupling strength to the polarization. We introduce general rules for how to engineer $n$- and $p$-type domain wall conductivity based on the domain size, polarization and electronic band gap. This opens the possibility of fine-tuning the local transport properties and design $p$-$n$-junctions for domain wall-based nano-circuitry. △ Less

Submitted 4 July, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

Comments: 10 pages, 6 figures, Supp. Info. available on request

Journal ref: Phys. Rev. Materials 2, 114405 (2018)

Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO$_3$

Authors: T. S. Holstad, D. M. Evans, A. Ruff, D. R. Smaabraaten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, D. Meier

Abstract: Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti… ▽ More Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti$^{4+}$. Density functional theory calculations show that Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macro- and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 97, 085143 (2018)