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Showing 1–8 of 8 results for author: Småbråten, D R

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  1. arXiv:2502.07947  [pdf

    cond-mat.mtrl-sci

    Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects

    Authors: Jiali He, Ursula Ludacka, Kasper A. Hunnestad, Didrik R. Småbråten, Konstantin Shapovalov, Per Erik Vullum, Constantinos Hatzoglou, Donald M. Evans, Erik D. Roede, Zewu Yan, Edith Bourret, Sverre M. Selbach, David Gao, Jaakko Akola, Dennis Meier

    Abstract: Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orde… ▽ More

    Submitted 11 February, 2025; originally announced February 2025.

  2. arXiv:2411.00454  [pdf

    cond-mat.mtrl-sci cond-mat.str-el

    Controlling electronic properties of hexagonal manganites through aliovalent doping and thermoatmospheric history

    Authors: Didrik R. Småbråten, Frida H. Danmo, Nikolai H. Gaukås, Sathya P. Singh, Nikola Kanas, Dennis Meier, Kjell Wiik, Mari-Ann Einarsrud, Sverre M. Selbach

    Abstract: The family of hexagonal manganites is intensively studied for its multiferroicity, magnetoelectric coupling, improper ferroelectricity, functional domain walls, and topology-related scaling behaviors. It is established that these physical properties are co-determined by the cation sublattices and that aliovalent doping can readily be leveraged to modify them. The doping, however, also impacts the… ▽ More

    Submitted 1 November, 2024; originally announced November 2024.

    Comments: 6 figures

    MSC Class: 82-10 ACM Class: J.2.9

  3. arXiv:2309.02068  [pdf

    cond-mat.mtrl-sci

    Observation of Antiferroelectric Domain Walls in a Uniaxial Hyperferroelectric

    Authors: Michele Conroy, Didrik René Småbråten, Colin Ophus, Konstantin Shapovalov, Quentin M. Ramasse, Kasper Aas Hunnestad, Sverre M. Selbach, Ulrich Aschauer, Kalani Moore, J. Marty Gregg, Ursel Bangert, Massimiliano Stengel, Alexei Gruverman, Dennis Meier

    Abstract: Ferroelectric domain walls are a rich source of emergent electronic properties and unusual polar order. Recent studies showed that the configuration of ferroelectric walls can go well beyond the conventional Ising-type structure. Néel-, Bloch-, and vortex-like polar patterns have been observed, displaying strong similarities with the spin textures at magnetic domain walls. Here, we report the disc… ▽ More

    Submitted 5 September, 2023; originally announced September 2023.

  4. arXiv:2006.15252  [pdf

    cond-mat.mtrl-sci

    Controlling local resistance via electric-field induced dislocations

    Authors: D. M. Evans, D. R. Småbråten, T. S. Holstad, P. E. Vullum, A. B. Mosberg, Z. Yan, E. Bourret, A. T. J. Van Helvoort, S. M. Selbach, D. Meier

    Abstract: Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations… ▽ More

    Submitted 26 June, 2020; originally announced June 2020.

    Comments: 20 pages, 7 figures

  5. arXiv:2003.12521  [pdf

    physics.app-ph cond-mat.mtrl-sci

    Intrinsic and extrinsic conduction contributions at nominally neutral domain walls in hexagonal manganites

    Authors: J. Schultheiß, J. Schaab, D. R. Småbråten, S. H. Skjærvø, E. Bourret, Z. Yan, S. M. Selbach, D. Meier

    Abstract: Conductive and electrostatic atomic force microscopy (cAFM and EFM) are used to investigate the electric conduction at nominally neutral domain walls in hexagonal manganites. The EFM measurements reveal a propensity of mobile charge carriers to accumulate at the nominally neutral domain walls in ErMnO3, which is corroborated by cAFM scans showing locally enhanced d.c. conductance. Our findings are… ▽ More

    Submitted 30 March, 2020; v1 submitted 27 March, 2020; originally announced March 2020.

    Comments: 5 pages, 3 figures

  6. Oxygen vacancies in bulk and at neutral domain walls in hexagonal YMnO$_3$

    Authors: Sandra H. Skjærvø, Didrik R. Småbråten, Nicola A. Spaldin, Thomas Tybell, Sverre M. Selbach

    Abstract: We use density functional calculations to investigate the accommodation and migration of oxygen vacancies in bulk hexagonal YMnO$_3$, and to study interactions between neutral ferroelectric domain walls and oxygen vacancies. Our calculations show that oxygen vacancies in bulk YMnO$_3$ are more stable in the Mn-O layers than in the Y-O layers. Migration barriers of the planar oxygen vacancies are h… ▽ More

    Submitted 4 July, 2018; originally announced July 2018.

    Comments: 9 pages, 6 figures

    Journal ref: Phys. Rev. B 98, 184102 (2018)

  7. Charged domain walls in improper ferroelectric hexagonal manganites and gallates

    Authors: Didrik R. Småbråten, Quintin N. Meier, Sandra H. Skjærvø, Katherine Inzani, Dennis Meier, Sverre M. Selbach

    Abstract: Ferroelectric domain walls are attracting broad attention as atomic-scale switches, diodes and mobile wires for next-generation nanoelectronics. Charged domain walls in improper ferroelectrics are particularly interesting as they offer multifunctional properties and an inherent stability not found in proper ferroelectrics. Here we study the energetics and structure of charged walls in improper fer… ▽ More

    Submitted 4 July, 2018; v1 submitted 16 June, 2018; originally announced June 2018.

    Comments: 10 pages, 6 figures, Supp. Info. available on request

    Journal ref: Phys. Rev. Materials 2, 114405 (2018)

  8. Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO$_3$

    Authors: T. S. Holstad, D. M. Evans, A. Ruff, D. R. Smaabraaten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, D. Meier

    Abstract: Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti… ▽ More

    Submitted 16 October, 2017; originally announced October 2017.

    Journal ref: Phys. Rev. B 97, 085143 (2018)