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Coherence effects in LIPSS formation on silicon wafers upon picosecond laser pulse irradiations
Authors:
Inam Mirza,
Juraj Sládek,
Yoann Levy,
Alexander V. Bulgakov,
Vasilis Dimitriou,
Helen Papadaki,
Evaggelos Kaselouris,
Paulius Gecys,
Gediminas Račiukaitis,
Nadezhda M. Bulgakova
Abstract:
Using different laser irradiation patterns to modify of silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced already starting from the second laser pulse, provided that polarization direction coincides with the scanning direction. If the laser irradiation spot is shift…
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Using different laser irradiation patterns to modify of silicon surface, it has been demonstrated that, at rather small overlapping between irradiation spots, highly regular laser-induced periodic surface structures (LIPSS) can be produced already starting from the second laser pulse, provided that polarization direction coincides with the scanning direction. If the laser irradiation spot is shifted from the previous one perpendicular to light polarization, LIPSS are not formed even after many pulses. This coherence effect is explained by a three-wave interference, - surface electromagnetic waves (SEWs) generated within the irradiated spot, SEWs scattered from the crater edge formed by the previous laser pulse, and the incoming laser pulse, - providing conditions for amplification of the periodic light-absorption pattern. To study possible consequences of SEW scattering from the laser-modified regions, where the refractive index can change due to material melting, amorphization, and the residual stress formed by previous laser pulses, hydrodynamic modelling and simulations have been performed within the melting regime. The simulations show that stress and vertical displacement could be amplified upon laser scanning. Both mechanisms, three-wave interference and stress accumulation, could enable an additional degree of controlling surface structuring.
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Submitted 3 December, 2024; v1 submitted 18 November, 2024;
originally announced November 2024.
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Dual-wavelength femtosecond laser-induced low-fluence single-shot damage and ablation of silicon
Authors:
Alexander V. Bulgakov,
Juraj Sládek,
Jan Hrabovský,
Inam Mirza,
Wladimir Marine,
Nadezhda M. Bulgakova
Abstract:
A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are co…
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A study of damage and ablation of silicon induced by two individual femtosecond laser pulses of different wavelengths, 1030 and 515 nm, is performed to address the physical mechanisms of dual-wavelength ablation and reveal possibilities for increasing the ablation efficiency. The produced ablation craters and damaged areas are analyzed as a function of time separation between the pulses and are compared with monochromatic pulses of the same total energy. Particular attention is given to low-fluence irradiation regimes when the energy densities in each pulse are below the ablation threshold and thus no shielding of the subsequent pulse by the ablation products occurs. The sequence order of pulses is demonstrated to be essential in bi-color ablation with higher material removal rates when a shorter-wavelength pulse arrives first at the surface. At long delays of 30-100 ps, the dual-wavelength ablation is found to be particularly strong with the formation of deep smooth craters. This is explained by the expansion of a hot liquid layer produced by the first pulse with a drastic decrease in the surface reflectivity at this timescale. The results provide insight into the processes of dual-wavelength laser ablation offering a better control of the energy deposition into material.
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Submitted 24 February, 2024;
originally announced February 2024.
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The curvature-induced magnetization in CrI3 bilayer: flexomagnetic effect enhancement in van der Waals antiferromagnets
Authors:
Lei Qiao,
Jan Sladek,
Vladimir Sladek,
Alexey S. Kaminskiy,
Alexander P. Pyatakov,
Wei Ren
Abstract:
The bilayer of CrI3 is a prototypical van der Waals 2D antiferromagnetic material with magnetoelectric effect. It is not generally known, however, that for symmetry reasons the flexomagnetic effect, i.e., the strain gradient-induced magnetization, is also possible in this material. In the present paper, based on the first principle calculations, we estimate the flexomagnetic effect to be 200 μBÅ t…
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The bilayer of CrI3 is a prototypical van der Waals 2D antiferromagnetic material with magnetoelectric effect. It is not generally known, however, that for symmetry reasons the flexomagnetic effect, i.e., the strain gradient-induced magnetization, is also possible in this material. In the present paper, based on the first principle calculations, we estimate the flexomagnetic effect to be 200 μBÅ that is two orders of magnitude higher than it was predicted for the referent antiperovskite flexomagnetic material Mn3GaN. The two major factors of flexomagnetic effect enhancement related to the peculiarities of antiferromagnetic structure of van der Waals magnets is revealed: the strain-dependent ferromagnetic coupling in each layer and large interlayer distance separating antiferromagnetically coupled ions. Since 2D systems are naturally prone to mechanical deformation, the emerging field of flexomagnetism is of special interest for application in spintronics of van der Waals materials and straintronics in particular.
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Submitted 11 July, 2023;
originally announced July 2023.
