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Hybrid electroluminescence device for on-demand single photon generation at room temperature
Authors:
Aleksander Rodek,
Mateusz Hajdel,
Kacper Oreszczuk,
Anna Kafar,
Muhammed Aktas,
Lucja Marona,
Marek Potemski,
Czeslaw Skierbiszewski,
Piotr Kossacki
Abstract:
Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into potential optoelectronic devices due to the layered structur…
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Recent research focused on single photon emitters (SPEs) hosted by layered semiconductors, particularly hexagonal boron nitride (hBN), has revealed a promising alternative to quantum dots (QDs) for generating single, indistinguishable photons. hBN-based SPEs offer lower material costs, room temperature emission, and easy integration into potential optoelectronic devices due to the layered structure of the host crystal. This work presents compact hybrid electroluminescence devices, in which GaN laser diodes (LDs) are used for bottom-to-top excitation of hBN nanoflakes deposited on the laser facets. Our approach circumvents the issue of electroluminescence generation from hBN and provides access to the SPE's signal without optical driving by an external laser. Using laser diodes upgraded with Bragg reflectors a room-temperature generation of single photons from hBN is confirmed by an 80%-dip in their g(2) second-order correlation. The on-demand emission of single photons at room temperature is demonstrated by driving the laser diodes in pulsed operation, with confidence supported by a measured g(2)(0) value of 0.37.
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Submitted 5 August, 2024; v1 submitted 1 August, 2024;
originally announced August 2024.
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Impact of interfaces on photoluminescence efficiency of high indium content InGaN quantum wells
Authors:
Paweł Wolny,
Henryk Turski,
Grzegorz Muziol,
Marta Sawicka,
Julita Smalc-Koziorowska,
Joanna Moneta,
Anna Feduniewicz-Żmuda,
Szymon Grzanka,
Czesław Skierbiszewski
Abstract:
InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effe…
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InGaN-based light emitting diodes (LEDs) are known to suffer from low electron and hole wavefunction overlap due to high piezoelectric field. Staggered InGaN quantum wells (QWs) have been proposed to increase the wavefunction overlap and improve the efficiency of LEDs especially for long wavelength emitters. In this work we evidence that the growth of staggered QWs has also another beneficial effect as it allows to reduce the formation of defects, responsible for nonradiative Shockley-Read-Hall recombination, at the bottom interface of the QW. Staggered QWs comprised an InGaN layer of an intermediate In content between the barrier and the QW. We show that insertion of such a layer results in a significant increase of the luminescence intensity, even if the calculated wavefunction overlap drops. We study the dependence of the thickness of such an intermediate In content layer on photoluminescence (PL) intensity behavior. Staggered QWs exhibit increased cathodoluminescence (CL) homogeneity that is a fingerprint of lower density of defects, in contrast to standard QWs for which high density of dark spots are observed in QW emission mapping. Transmission electron microscopy of standard QWs revealed formation of basal-plane stacking faults (BSFs) and voids that could have resulted from vacancy aggregation. Stepwise increase of the In content in staggered QWs prevents formation of point defects and results in an increased luminescence efficiency. The In composition difference between the barrier and the well is therefore a key parameter to control the formation of point defects in the high-In content QWs, influencing the luminescence efficiency.
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Submitted 21 June, 2022;
originally announced June 2022.
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Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides
Authors:
K. Oreszczuk,
J. Slawinska,
A. Rodek,
M. Potemski,
C. Skierbiszewski,
P. Kossacki
Abstract:
We demonstrate a novel electro-luminescence device in which GaN-based $μ$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $μ$-LED surface. A special $μ$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to ac…
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We demonstrate a novel electro-luminescence device in which GaN-based $μ$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $μ$-LED surface. A special $μ$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to act as a stand-alone, electrically-driven single-photon source.
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Submitted 26 June, 2022; v1 submitted 8 June, 2022;
originally announced June 2022.
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Electrically pumped blue laser diodes with nanoporous bottom cladding
Authors:
Marta Sawicka,
Grzegorz Muziol,
Natalia Fiuczek,
Mateusz Hajdel,
Marcin Siekacz,
Anna Feduniewicz-Żmuda,
Krzesimir Nowakowski-Szkudlarek,
Paweł Wolny,
Mikołaj Żak,
Henryk Turski,
Czesław Skierbiszewski
Abstract:
We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cla…
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We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding. The LD structure was grown by plasma-assisted molecular beam epitaxy. Highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6 x 1019 cm-3 was electrochemically etched to obtain porosity of 15 +/- 3% with pore size of 20 +/- 9 nm. The devices with nanoporous bottom cladding are compared to the refer-ence structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The de-sign of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.
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Submitted 11 January, 2022;
originally announced January 2022.
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GaN-based Bipolar Cascade Lasers with 25nm wide Quantum Wells: Simulation and Analysis
Authors:
J. Piprek,
G. Muziol,
M. Siekacz,
C. Skierbiszewski
Abstract:
We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quant…
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We analyze internal device physics, performance limitations, and optimization options for a unique laser design with multiple active regions separated by tunnel junctions, featuring surprisingly wide quantum wells. Contrary to common assumptions, these quantum wells are revealed to allow for perfect screening of the strong built-in polarization field, while optical gain is provided by higher quantum levels. However, internal absorption, low p-cladding conductivity, and self-heating are shown to strongly limit the laser performance.
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Submitted 24 June, 2021;
originally announced June 2021.
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Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes using UID GaN spacers
Authors:
Shyam Bharadwaj,
Jeffrey Miller,
Kevin Lee,
Joshua Lederman,
Marcin Siekacz,
Huili Xing,
Debdeep Jena,
Czesław Skierbiszewski,
Henryk Turski
Abstract:
Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga…
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Recently, the use of bottom-TJ geometry in LEDs, which achieves N-polar-like alignment of polarization fields in conventional metal-polar orientations, has enabled enhancements in LED performance due to improved injection efficiency. Here, we elucidate the root causes behind the enhanced injection efficiency by employing mature laser diode structures with optimized heterojunction GaN/In$_{0.17}$Ga$_{0.83}$N/GaN TJs and UID GaN spacers to separate the optical mode from the heavily doped absorbing p-cladding regions. In such laser structures, polarization offsets at the electron blocking layer, spacer, and quantum barrier interfaces play discernable roles in carrier transport. By comparing a top-TJ structure to a bottom-TJ structure, and correlating features in the electroluminescence, capacitance-voltage, and current-voltage characteristics to unique signatures of the N- and Ga-polar polarization heterointerfaces in energy band diagram simulations, we identify that improved hole injection at low currents, and improved electron blocking at high currents, leads to higher injection efficiency and higher output power for the bottom-TJ device throughout 5 orders of current density (0.015 - 1000 A/cm$^2$). Moreover, even with the addition of a UID GaN spacer, differential resistances are state-of-the-art, below 7x10-4 $Ω$cm$^2$. These results highlight the virtues of the bottom-TJ geometry for use in high-efficiency laser diodes.
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Submitted 8 November, 2019;
originally announced November 2019.
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Inhomogeneous broadening of optical transitions observed in photoluminescence and modulated reflectance of polar and non-polar InGaN quantum wells
Authors:
Michał Jarema,
Marta Gładysiewicz,
Łukasz Janicki,
Ewelina Zdanowicz,
Henryk Turski,
Grzegorz Muzioł,
Czesław Skierbiszewski,
Robert Kudrawiec
Abstract:
In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous broadening observed in photoluminescence (PL) and electromodulated reflectance (ER) spectra of InGaN QWs dedicated to green/blue lasers is explained. Spectra of both pol…
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In this work the broadening of interband transitions in InGaN/GaN quantum wells (QWs) resulting from structural inhomogeneities is analyzed. The role of polarization-induced electric field in the mechanism behind the inhomogeneous broadening observed in photoluminescence (PL) and electromodulated reflectance (ER) spectra of InGaN QWs dedicated to green/blue lasers is explained. Spectra of both polar and non-polar QWs are simulated within the random QW model distinguishing contributions of individual transitions taking into account QW inhomogeneities (QW width and indium content fluctuations). On this basis we interpret the ER and PL spectra measured for a polar multiple QW InGaN/GaN structure. The built-in electric field shifts the emission wavelength to red, and enhances the broadening of optical transitions. It is clearly shown that for polar QWs the Stokes shift can be easily overestimated if PL spectra are compared with ER spectra since the intensity of the fundamental transition observed in ER spectra significantly decreases with the increase in QW width. In this way ER signal related to excited states start to dominate. This effect is strongly enhanced by QW inhomogeneities.
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Submitted 7 February, 2020; v1 submitted 22 July, 2019;
originally announced July 2019.
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Highly efficient optical transition between excited states in wide InGaN quantum wells
Authors:
Grzegorz Muziol,
Henryk Turski,
Marcin Siekacz,
Krzesimir Szkudlarek,
Lukasz Janicki,
Sebastian Zolud,
Robert Kudrawiec,
Tadeusz Suski,
Czeslaw Skierbiszewski
Abstract:
There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission wavelengths due to the quantum confined Stark effect (QCSE). In this paper we present a design of the active region based on wide InGaN quantum wells (QWs) which do not…
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There is a lack of highly efficient light emitting devices (LEDs) operating in the green spectral regime. The devices based on (In,Al)GaN show extremely high efficiencies in violet and blue colors but fall short for longer emission wavelengths due to the quantum confined Stark effect (QCSE). In this paper we present a design of the active region based on wide InGaN quantum wells (QWs) which do not suffer from QCSE and profit from an enhancement in the internal quantum efficiency (IQE). The design exploits highly efficient optical transitions between excited states. It is shown that, counterintuitively, the devices with higher InGaN composition exhibit a higher enhancement in IQE. Experimental evidence is provided showing a gradual change in the nature of the optical transition with increasing thickness of the QW. Moreover, optical gain in long wavelength LDs incorporating standard and wide QWs is investigated to show the utilization of our concept.
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Submitted 17 October, 2018;
originally announced October 2018.
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Luminescent N-polar (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy at high temperature
Authors:
C. Chèze,
F. Feix,
J. Lähnemann,
T. Flissikowski,
O. Brandt,
M. Kryśko,
P. Wolny,
H. Turski,
C. Skierbiszewski,
O. Brandt
Abstract:
N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperatur…
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N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C. This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially homogeneous green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.
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Submitted 23 October, 2017;
originally announced October 2017.
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Comparison of the luminous efficiency of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells grown by plasma-assisted molecular beam epitaxy
Authors:
Sergio Fernández-Garrido,
Jonas Lähnemann,
Christian Hauswald,
Maxim Korytov,
Martin Albrecht,
Caroline Chèze,
Czesław Skierbiszewski,
Oliver Brandt
Abstract:
We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar counterparts, the N-polar QWs prepared on freestanding GaN do not exhibit any detectable photoluminescence. Theoretical simulations of the band profiles…
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We investigate the luminescence of Ga- and N-polar In$_{x}$Ga$_{1-x}$N/In$_{y}$Ga$_{1-y}$N quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on freestanding GaN as well as 6H-SiC substrates. In striking contrast to their Ga-polar counterparts, the N-polar QWs prepared on freestanding GaN do not exhibit any detectable photoluminescence. Theoretical simulations of the band profiles combined with resonant excitation of the QWs allow us to rule out carrier escape and subsequent surface recombination as the reason for the absence of luminescence. To explore the hypothesis of a high concentration of nonradiative defects at the interfaces between wells and barriers, we analyze Ga- and N-polar QWs prepared on 6H-SiC as a function of the well width. Intense luminescence is observed for both Ga- and N polar samples. As expected, the luminescence of the Ga-polar QWs quenches and red-shifts with increasing well width due to the quantum confined Stark effect. In contrast, both the intensity and the energy of the luminescence from the N-polar samples are essentially independent of well width. Transmission electron microscopy reveals that the N-polar QWs exhibit abrupt interfaces and homogeneous composition, excluding emission from In-rich clusters as the reason for this anomalous behavior. The microscopic origin of the luminescence in the N-polar QWs is elucidated using spatially resolved cathodoluminescence spectroscopy. Regardless of well width, the luminescence is found to not originate from the N-polar QWs, but from the semipolar facets of v-pit defects. These results cast serious doubts on the potential of N-polar QWs grown by plasma-assisted molecular beam epitaxy for the development of long-wavelength light emitting diodes. What remains to be seen is whether unconventional growth conditions may enable a significant reduction in the concentration of nonradiative defects.
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Submitted 22 October, 2015;
originally announced October 2015.
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Miscut dependent surface evolution in the process of N-polar GaN$(000\bar 1)$ growth under N-rich condition
Authors:
Filip Krzyzewski,
Magdalena A. Zaluska-Kotur,
Henryk Turski,
Marta Sawicka,
Czeslaw Skierbiszewski
Abstract:
The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally observed surface morphologies of (000-1) GaN layers grown by plasma-assisted molecular beam epitaxy. The proposed kMC two-component model of GaN(000-1) surface w…
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The evolution of surface morphology during the growth of N-polar (000-1) GaN under N-rich condition is studied by kinetic Monte Carlo (kMC) simulations for two substrates miscuts 2deg and 4deg. The results are compared with experimentally observed surface morphologies of (000-1) GaN layers grown by plasma-assisted molecular beam epitaxy. The proposed kMC two-component model of GaN(000-1) surface where both types of atoms: nitrogen and gallium attach the surface and diffuse independently, explains that at relatively high rates of the step flow (miscut angle <2deg) the low diffusion of gallium adatoms causes surface instabilities and leads to experimentally observed roughening while for low rates of the step flow (miscut 4deg), smooth surface can be obtained. In the presence of almost immobile nitrogen atoms under N-rich conditions, the growth is realized by the process of two-dimensional island nucleation and coalescence. Additionally, we show that higher crystal miscut, lower crystal growth rate or higher temperature results in similar effect of the smoothening of the surface. We show that the surface also smoothens for the growth conditions with very high N-excess. The presence of large number of nitrogen atoms changes locally mobility of gallium atoms thus providing easier coalescence of separated island.
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Submitted 3 September, 2015;
originally announced September 2015.
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Rashba field in GaN
Authors:
A. Wolos,
Z. Wilamowski,
C. Skierbiszewski,
A. Drabinska,
B. Lucznik,
I. Grzegory,
S. Porowski
Abstract:
We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field s…
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We discuss problem of Rashba field in bulk GaN and in GaN/AlGaN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 Gauss, alpha_BIA < 4*10^-13 eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlGaN heterostructures originates from properties of the interface.
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Submitted 22 December, 2010;
originally announced December 2010.
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Weak Antilocalization and Spin Precession in Quantum Wells
Authors:
W. Knap,
C. Skierbiszewski,
A. Zduniak,
E. Litwin-Staszewska,
D. Bertho,
F. Kobbi,
J. L. Robert,
G. E. Pikus,
F. G. Pikus,
S. V. Iordanskii,
V. Mosser,
K. Zekentes,
Yu. B. Lyanda-Geller
Abstract:
The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed which takes into account both linear and cubic in ele…
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The results of magnetoconductivity measurements in GaInAs quantum wells are presented. The observed magnetoconductivity appears due to the quantum interference, which lead to the weak localization effect. It is established that the details of the weak localization are controlled by the spin splitting of electron spectra. A theory is developed which takes into account both linear and cubic in electron wave vector terms in spin splitting, which arise due to the lack of inversion center in the crystal, as well as the linear terms which appear when the well itself is asymmetric. It is established that, unlike spin relaxation rate, contributions of different terms into magnetoconductivity are not additive. It is demonstrated that in the interval of electron densities under investigation (0.98-1.85)*10^(12) 1/cm^2 all three contribution are comparable and have to be taken into account to achieve a good agreement between the theory and experiment. The results obtained from comparison of the experiment and the theory have allowed us to determine what mechanisms dominate the spin relaxation in quantum wells and to improve the accuracy of determination of spin splitting parameters in A3B5 crystals and 2D structures.
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Submitted 12 February, 1996;
originally announced February 1996.
