Showing 1–18 of 18 results for author: Siol, S

Auger parameter analysis for TiN and AlN thin films via combined in-situ XPS and HAXPES

Authors: O. V. Pshyk, J. Patidar, C. Cancellieri, S. Siol

Abstract: Auger parameter analysis provides in-depth information about the electronic and chemical bonding properties of TiN and AlN thin films, which are relevant across a wide range of technologies. Meaningful interpretation and analysis of the Auger parameter of these materials have been hindered due to, among other reasons, the absence of reliable references. Here we present a comprehensive study of Aug… ▽ More Auger parameter analysis provides in-depth information about the electronic and chemical bonding properties of TiN and AlN thin films, which are relevant across a wide range of technologies. Meaningful interpretation and analysis of the Auger parameter of these materials have been hindered due to, among other reasons, the absence of reliable references. Here we present a comprehensive study of Auger parameters for TiN and AlN thin films using a dual-source lab-based XPS/HAXPES system equipped with Al Ka and Cr Ka x-ray sources. Due to a large spread of excitation x-ray energy, bulk- and surface-sensitive core-level photoelectrons and Auger transitions are probed. This allows us to study a wide range of Auger and core-level emission lines of TiN and AlN. These measurements can serve as references for further identification of chemical state changes, oxidation state or any deviations in the local chemical environment in these materials. UHV sample transfer was employed to minimise surface contamination. Additionally, we demonstrate how common procedures such as ambient air exposure and Ar+ sputter-etching influence the Auger parameters, highlighting the importance of surface preparation in spectroscopic analysis. △ Less

Submitted 16 June, 2025; v1 submitted 26 May, 2025; originally announced May 2025.

Comments: 28 pages, 6 figure

Accelerating the development of oxynitride thin films: A combinatorial investigation of the Al-Si-O-N system

Authors: Stefanie Frick, Oleksandr Pshyk, Arnold Müller, Alexander Wieczorek, Kerstin Thorwarth, Sebastian Siol

Abstract: Oxynitrides are used in a variety of applications including photocatalysts, high-k dielectrics or wear-resistant coatings and often show intriguing multi-functionality. To accelerate the co-optimization of the relevant material properties of these compositionally complex oxynitride systems, high-throughput synthesis and characterization methods are desirable. In the present work, three approaches… ▽ More Oxynitrides are used in a variety of applications including photocatalysts, high-k dielectrics or wear-resistant coatings and often show intriguing multi-functionality. To accelerate the co-optimization of the relevant material properties of these compositionally complex oxynitride systems, high-throughput synthesis and characterization methods are desirable. In the present work, three approaches were investigated to obtain orthogonal anion and cation gradients on the same substrate by magnetron sputtering. The different approaches included varying positions of the local reactive gas inlets and different combinations of target materials. The best performing approach was applied to screen a large two-dimensional area of the quaternary phase space within the Al-Si-O-N system. This material system is a promising candidate for transparent protective coatings with variable refractive indices. With only five depositions of combinatorial libraries, an anion composition range of 2-46% O/(N+O) and a cation composition range of 4-44% Si/(Al+Si) is covered. For lower oxygen and silicon contents, a region with hardness of up to 25 GPa is observed, where the material exhibits either wurtzite AlN or a composite microstructure. By increasing the deposition temperature to 400 °C, an extension of this region can be achieved. At higher oxygen and silicon contents, the structure of the samples is X-ray amorphous. In this structural region, an intimate correlation between hardness and refractive index is confirmed. The results of this study introduce a practical approach to perform high-throughput development of mixed anion materials, which is transferable to many materials systems and applications. △ Less

Submitted 6 May, 2025; originally announced May 2025.

opXRD: Open Experimental Powder X-ray Diffraction Database

Authors: Daniel Hollarek, Henrik Schopmans, Jona Östreicher, Jonas Teufel, Bin Cao, Adie Alwen, Simon Schweidler, Mriganka Singh, Tim Kodalle, Hanlin Hu, Gregoire Heymans, Maged Abdelsamie, Arthur Hardiagon, Alexander Wieczorek, Siarhei Zhuk, Ruth Schwaiger, Sebastian Siol, François-Xavier Coudert, Moritz Wolf, Carolin M. Sutter-Fella, Ben Breitung, Andrea M. Hodge, Tong-yi Zhang, Pascal Friederich

Abstract: Powder X-ray diffraction (pXRD) experiments are a cornerstone for materials structure characterization. Despite their widespread application, analyzing pXRD diffractograms still presents a significant challenge to automation and a bottleneck in high-throughput discovery in self-driving labs. Machine learning promises to resolve this bottleneck by enabling automated powder diffraction analysis. A n… ▽ More Powder X-ray diffraction (pXRD) experiments are a cornerstone for materials structure characterization. Despite their widespread application, analyzing pXRD diffractograms still presents a significant challenge to automation and a bottleneck in high-throughput discovery in self-driving labs. Machine learning promises to resolve this bottleneck by enabling automated powder diffraction analysis. A notable difficulty in applying machine learning to this domain is the lack of sufficiently sized experimental datasets, which has constrained researchers to train primarily on simulated data. However, models trained on simulated pXRD patterns showed limited generalization to experimental patterns, particularly for low-quality experimental patterns with high noise levels and elevated backgrounds. With the Open Experimental Powder X-Ray Diffraction Database (opXRD), we provide an openly available and easily accessible dataset of labeled and unlabeled experimental powder diffractograms. Labeled opXRD data can be used to evaluate the performance of models on experimental data and unlabeled opXRD data can help improve the performance of models on experimental data, e.g. through transfer learning methods. We collected 92552 diffractograms, 2179 of them labeled, from a wide spectrum of materials classes. We hope this ongoing effort can guide machine learning research toward fully automated analysis of pXRD data and thus enable future self-driving materials labs. △ Less

Submitted 10 March, 2025; v1 submitted 7 March, 2025; originally announced March 2025.

Ferroelectric AlScN thin films with enhanced polarization and low leakage enabled by high-power impulse magnetron sputtering

Authors: Federica Messi, Jyotish Patidar, Nathan Rodkey, Christoph W. Dräyer, Morgan Trassin, Sebastian Siol

Abstract: The demand for efficient data processing motivates a shift toward in-memory computing architectures. Ferroelectric materials, particularly AlScN, show great promise for next-generation memory devices. However, their widespread application is limited due challenges such as high coercive fields, leakage currents and limited stability. Our work introduces a novel synthesis approach for ferroelectric… ▽ More The demand for efficient data processing motivates a shift toward in-memory computing architectures. Ferroelectric materials, particularly AlScN, show great promise for next-generation memory devices. However, their widespread application is limited due challenges such as high coercive fields, leakage currents and limited stability. Our work introduces a novel synthesis approach for ferroelectric AlScN thin films using high-power impulse magnetron sputtering (HiPIMS). Through a combinatorial study, we investigate the effect of scandium content and substrate bias on the ferroelectric properties of AlScN films deposited using metal-ion synchronized (MIS) HiPIMS. Leveraging the high ionization rates of HiPIMS and optimally timed substrate bias potentials, we enhance the adatom mobility at low temperatures. Our films exhibit a high degree of texture and crystallinity as well as low roughness at temperatures as low as 250°C. Most importantly, the films exhibit coercive fields comparable to state-of-the-art values (5 MV/cm) with significantly enhanced remanent polarization (158-172.0 μC/cm2). Notably, the remanent polarization remains stable across varying scandium concentrations. We further evaluate cycling stability and leakage current to assess suitability for memory applications. This study demonstrates HiPIMS as a scalable and CMOS compatible technique for synthesizing high-quality ferroelectric AlScN films, paving the way for their application in non-volatile memory applications. △ Less

Submitted 3 January, 2025; originally announced January 2025.

Computationally-guided discovery and synthesis of the amorphous nitride Y2WN4

Authors: O. V. Pshyk, S. Zhuk, J. Patidar, A. Wieczorek, A. Sharma, J. Michler, C. Cancellieri, V. Stevanovic, S. Siol

Abstract: Amorphous materials offer unique functional characteristics, which are often not observed in their crystalline counterparts. This makes them invaluable for many technological applications, such as diffusion barriers in semiconductor devices. However, the computationally guided search for new functional amorphous materials with attractive properties represents a major challenge. In this work, we co… ▽ More Amorphous materials offer unique functional characteristics, which are often not observed in their crystalline counterparts. This makes them invaluable for many technological applications, such as diffusion barriers in semiconductor devices. However, the computationally guided search for new functional amorphous materials with attractive properties represents a major challenge. In this work, we combine theory and experiment to discover and synthesize the amorphous ternary nitride Y2WN4. We show how computational random structure sampling offers a route to robustly identify chemistries which are hard to crystallize. Experiments prove that the predicted nitride is easily synthesized in amorphous phase with no detectable precipitates. The material exhibits remarkable stability against crystallization at high temperature and as well as excellent oxidation resistance and stability against Cu diffusion. Moreover, Y2WN4 exhibits a sharp onset of optical absorption and an indirect band gap of 2.24 eV. These properties make this material promising for the integration in electronic devices as a high-performance diffusion barrier with adjustable band edges. △ Less

Submitted 1 December, 2024; originally announced December 2024.

Low Temperature Deposition of Functional Thin Films on Insulating Substrates: Selective Ion Acceleration using Synchronized Floating Potential HiPIMS

Authors: Jyotish Patidar, Oleksandr Pshyk, Lars Sommerhäuser, Sebastian Siol

Abstract: Ionized physical vapor deposition techniques, such as high-power impulse magnetron sputtering (HiPIMS) are gaining popularity due to their ability to produce high-quality thin films at low deposition temperatures. In those techniques, ions are commonly accelerated onto the growing film using negative potential applied to the substrate. One key challenge however is, how such potentials can be appli… ▽ More Ionized physical vapor deposition techniques, such as high-power impulse magnetron sputtering (HiPIMS) are gaining popularity due to their ability to produce high-quality thin films at low deposition temperatures. In those techniques, ions are commonly accelerated onto the growing film using negative potential applied to the substrate. One key challenge however is, how such potentials can be applied on insulating or electrically floating substrates. In this work, we present a novel approach for low-temperature deposition of high-quality thin films on insulating substrates using Synchronized Floating Potential High-Power Impulse Magnetron Sputtering (SFP-HiPIMS). This technique leverages the negative floating potential, induced on the substrate during the HiPIMS discharge. By synchronizing the ion arrival with the substrate's floating potential, specific ions can be accelerated preferentially, thereby enhancing adatom mobility and improving film quality while mitigating the detrimental effects of Ar+ ion bombardment. Our proof-of-concept study demonstrates the deposition of high-quality, textured Al0.8Sc0.2N thin films on various insulating substrates at low temperatures. We show that synchronizing the Al and Sc ion fluxes with the induced negative floating potential significantly enhances the films' crystallinity, c-axis texture and at the same time reduces residual stress. In addition, it enables epitaxial growth on sapphire at temperatures as low as 100°C. The results of this study demonstrate that SFP-HiPIMS provides a practical and economical solution for a long-standing challenge in physical vapor deposition, which can be implemented in standard deposition equipment. SFP-HiPIMS therefore paves the way for advanced manufacturing processes in various emerging technologies. △ Less

Submitted 22 August, 2024; originally announced August 2024.

Reducing the oxygen contamination in conductive (Ti,Zr)N coatings via RF-bias assisted reactive sputtering

Authors: K. Thorwarth, M. Watroba, O. Pshyk, S. Zhuk, J. Patidar, J. Schwiedrzik, J. Sommerhäuser, L. Sommerhäuser, S. Siol

Abstract: Ternary transition metal nitride coatings are promising for many applications as they can offer improved hardness and oxidation resistance compared to binary counterparts. A common challenge in the deposition of functional nitride thin films is oxygen contamination. Even low amounts of oxygen contamination can adversely affect the functional properties of the thin films. Here, we present a practic… ▽ More Ternary transition metal nitride coatings are promising for many applications as they can offer improved hardness and oxidation resistance compared to binary counterparts. A common challenge in the deposition of functional nitride thin films is oxygen contamination. Even low amounts of oxygen contamination can adversely affect the functional properties of the thin films. Here, we present a practical approach for the growth of virtually oxygen-free (Ti, Zr)N thin films. To cover the complete compositional range of (Ti,Zr)N coatings we employ combinatorial reactive co-sputtering. The depositions are carried out with or without applying a low-power radio-frequency (RF) bias voltage to the substrate holder to study the possibility of decelerating energetic oxygen ions and effectively reducing oxygen contamination in the growing film. High-throughput structural analysis and functional property mapping are used to elucidate the synthesis-property relationships. The structural analysis indicates solid solution formation over the entire compositional range, as evidenced by Vegardian lattice scaling, regardless of the applied RF substrate bias. Irrespective of the composition of the films, the application of RF substrate bias leads to a dramatic reduction of oxygen contamination, as demonstrated by X-ray photoelectron spectroscopy (XPS) depth-profile mapping. This is reflected in a significant improvement in the films' conductivity and hardness. We demonstrate that the reduction in oxygen contamination is intrinsic to the process and not due to changes in the microstructure. The approach presented here is applicable to both conductive and insulating substrates and provides a practical route to synthesize nitride thin films with improved purity that can be applied in standard sputter chambers and on many different material systems. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Deposition of highly-crystalline AlScN thin films using synchronized HiPIMS -- from combinatorial screening to piezoelectric devices

Authors: Jyotish Patidar, Kerstin Thorwarth, Thorsten Schmitz-Kempen, Roland Kessels, Sebastian Siol

Abstract: Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, textured AlScN thin films is challenging. Current approaches typically rely on high temperatures and expensive compound targets. In this study, we demonstrate the feasibility of ionized physical vapor deposition to deposi… ▽ More Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, textured AlScN thin films is challenging. Current approaches typically rely on high temperatures and expensive compound targets. In this study, we demonstrate the feasibility of ionized physical vapor deposition to deposit highly oriented AlScN films with minimal defects at lower temperatures. Using metal-ion synchronized high-power impulse magnetron co-sputtering (MIS-HiPIMS) we can selectively bombard the growing film with Al and/or Sc ions to enhance the adatom mobility while simultaneously providing the ability to tune stress and coat complex structures conformally. We find that the Sc solubility in wurtzite AlN is slightly reduced, whereas crystallinity and texture are markedly improved. Disoriented grains, a key challenge in growing AlScN films, are completely removed via substrate biasing, while the residual stress can be tailored by adjusting the same. The measured piezoelectric response of the films is in line with DFT predictions and on par with the current state of the art. Finally, we demonstrate conformal deposition of c-axis textured AlScN on structured Si wafers underlining the promise of ionized PVD for the fabrication of advanced RF filters and next-generation MEMS devices. △ Less

Submitted 30 April, 2024; originally announced May 2024.

Beyond structural stabilization of highly-textured AlN thin film: the role of chemical effects

Authors: O. V. Pshyk, J. Patidar, S. Siol

Abstract: The crystalline quality and degree of c-axis orientation of hexagonal AlN thin films correlate directly with their functional properties. Therefore, achieving AlN thin films of high crystalline quality and texture is of extraordinary importance for many applications, but in particular in electronic devices. Here, we present a systematic study revealing that the growth of c-axis orientated AlN thin… ▽ More The crystalline quality and degree of c-axis orientation of hexagonal AlN thin films correlate directly with their functional properties. Therefore, achieving AlN thin films of high crystalline quality and texture is of extraordinary importance for many applications, but in particular in electronic devices. Here, we present a systematic study revealing that the growth of c-axis orientated AlN thin films can be governed by a chemical stabilization effect in addition to the conventionally known structural, i.e. strain-induced, stabilization mechanism. The promotion of in-plane growth of AlN grains with c-axis out-of-plane orientation is demonstrated on Y, W or Al seed layers with different thicknesses and crystallinity preliminary exposed to N2 at room temperature. We establish that the stabilization mechanism is chemical in nature: the formation of an N-rich surface layer on the metal seed layers upon exposure to N2 pre-determines the polarity of AlN islands at initial stages of thin film growth while the low energy barrier for the subsequent coalescence of islands of the same polarity contributes to grain growth. These results suggest that the growth of c-axis oriented AlN thin films can be optimized and controlled chemically thus opening more pathways for energy-efficient and controllable AlN thin-film growth processes. △ Less

Submitted 15 March, 2024; originally announced March 2024.

Advancing High-Throughput Combinatorial Aging Studies of Hybrid Perovskite Thin-Films via Precise Automated Characterization Methods and Machine Learning Assisted Analysis

Authors: Alexander Wieczorek, Austin G. Kuba, Jan Sommerhäuser, Luis Nicklaus Caceres, Christian Wolff, Sebastian Siol

Abstract: To optimize materials' stability, automated high-throughput workflows are of increasing interest. However, many of those workflows use processes not suitable for large-area depositions which limits the transferability of results. While combinatorial approaches based on vapour-based depositions are inherently scalable, their potential for controlled stability assessments has yet to be exploited. Ba… ▽ More To optimize materials' stability, automated high-throughput workflows are of increasing interest. However, many of those workflows use processes not suitable for large-area depositions which limits the transferability of results. While combinatorial approaches based on vapour-based depositions are inherently scalable, their potential for controlled stability assessments has yet to be exploited. Based on MAPbI3 thin-films as a prototypical system, we demonstrate a combinatorial inert-gas workflow to study materials degradation based on intrinsic factors only, closely resembling conditions in encapsulated de-vices. Through a comprehensive set of automated X-Ray fluorescence (XRF), X-Ray diffraction (XRD) and UV-Vis characterizations, we aim to obtain a holistic understanding of thin-film properties of pristine and aged thin-films. From phase changes derived from XRD characterizations before and after aging, we observe simi-lar aging behaviours for MAPbI3 thin-films with varying PbI2 residuals. Using a custom-designed in-situ UV-Vis aging setup, the combinatorial libraries are exposed to relevant aging conditions, such as heat or light-bias exposure. Simultaneously, UV-Vis photospectroscopy is performed to gain kinetic insights into the aging process which can be linked to intrinsic degradation processes such as autocatalytic decomposition. Despite scattering effects, which complicate the conventional interpretation of in-situ UV-Vis results, we demonstrate how a machine learning model trained on the comprehensive characterization data before and after the aging process can link optical changes to phase changes during aging. Consequently, this approach does not only enable semi-quantitative comparisons of materials' stability but also provides detailed insights into the underlying degradation processes which are otherwise mostly reported for investigations on single samples. △ Less

Submitted 24 November, 2023; originally announced November 2023.

Combinatorial Reactive Sputtering with Auger Parameter Analysis Enables Synthesis of Wurtzite Zn2TaN3

Authors: Siarhei Zhuk, Alexander Wieczorek, Amit Sharma, Jyotish Patidar, Kerstin Thorwarth, Johann Michler, Sebastian Siol

Abstract: The discovery of new functional materials is one of the key challenges in materials science. Combinatorial high-throughput approaches using reactive sputtering are commonly employed to screen unexplored phase spaces. During reactive combinatorial deposition the process conditions are rarely optimized, which can lead to poor crystallinity of the thin films. In addition, sputtering at shallow deposi… ▽ More The discovery of new functional materials is one of the key challenges in materials science. Combinatorial high-throughput approaches using reactive sputtering are commonly employed to screen unexplored phase spaces. During reactive combinatorial deposition the process conditions are rarely optimized, which can lead to poor crystallinity of the thin films. In addition, sputtering at shallow deposition angles can lead to off-axis preferential orientation of the grains. This can make the results from a conventional structural phase screening ambiguous. Here we perform a combinatorial screening of the Zn-Ta-N phase space with the aim to synthesize the novel semiconductor Zn2TaN3. While the results of the XRD phase screening are inconclusive, including chemical state analysis mapping in our workflow allows us to see a very clear discontinuity in the evolution of the Ta binding environment. This is indicative of the formation of a new ternary phase. In additional experiments, we isolate the material and perform a detailed characterization confirming the formation of single phase WZ-Zn2TaN3. Besides the formation of the new ternary nitride, we map the functional properties of ZnxTa1-xN and report previously unreported clean chemical state analysis for Zn3N2, TaN and Zn2TaN3. Overall, the results of this study showcase common challenges in high-throughput materials screening and highlight the merit of employing characterization techniques sensitive towards changes in the materials' short-range order and chemical state. △ Less

Submitted 8 November, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Journal ref: Chemistry of Materials, 2023, 35, 17, 7069-7078

Improving the crystallinity and texture of oblique-angle-deposited AlN thin films using reactive synchronized HiPIMS

Authors: Jyotish Patidar, Amit Sharma, Siarhei Zhuk, Giacomo Lorenzin, Claudia Cancellieri, Martin F. Sarott, Morgan Trassin, Kerstin Thorwarth, Johann Michler, Sebastian Siol

Abstract: Many technologies require highly-oriented and textured functional thin films. The most common synthe-sis approaches use on-axis sputter geometries. However, in some scenarios, on-axis sputtering is not feasible. During ionized physical vapor deposition (PVD), in contrast to conventional PVD, the film-forming species can be accelerated onto the growing film using substrate-bias potentials. This inc… ▽ More Many technologies require highly-oriented and textured functional thin films. The most common synthe-sis approaches use on-axis sputter geometries. However, in some scenarios, on-axis sputtering is not feasible. During ionized physical vapor deposition (PVD), in contrast to conventional PVD, the film-forming species can be accelerated onto the growing film using substrate-bias potentials. This increas-es the ad-atom mobility, but also deflects the trajectory of ions towards the substrate increasing the texture of the growing film. However, potential gas-ion incorporation in the films limits the feasibility of such approaches for the deposition of defect-sensitive materials. In this work, we report on the oblique-angle deposition of highly c-axis oriented AlN (0002) films, enabled by reactive metal-ion syn-chronized HiPIMS. The effect of critical deposition parameters, such as the magnetic configuration, ion kinetic energies and substrate biasing are investigated. The films deposited using HiPIMS show a more pronounced texture and orientation compared to DCMS films. We find that combining the HiPIMS dep-ositions with a moderate substrate bias of -30 V is sufficient to improve the crystalline quality and tex-ture of the films significantly. To reduce process-gas incorporation, and the formation of point defects, the negative substrate-bias potential is synchronized to the Al-rich fraction of each HiPIMS pulse. This leads to reduced Ar-Ion incorporation and improves the structural properties. The films also show uni-form polarization of the grains making this synthesis route suitable for piezoelectric applications. While the compressive stress in the films is still high, the results demonstrate, that synchronized HiPIMS can yield promising results for the synthesis under oblique-angle deposition conditions - even with low substrate-bias potentials. △ Less

Submitted 26 January, 2023; originally announced January 2023.

Resolving oxidation states and Sn-halide interactions of perovskites through Auger parameter analysis in XPS

Authors: Alexander Wieczorek, Huagui Lai, Johnpaul Pious, Fan Fu, Sebastian Siol

Abstract: Reliable chemical state analysis of Sn semiconductors by XPS is hindered by the marginal observed shift in the Sn 3d region. For hybrid Sn-based perovskites especially, errors associated with charge referencing can easily exceed chemistry-related shifts. Studies based on the modified Auger parameter $α'$ provide a suitable alternative and have been used previously to resolve different chemical sta… ▽ More Reliable chemical state analysis of Sn semiconductors by XPS is hindered by the marginal observed shift in the Sn 3d region. For hybrid Sn-based perovskites especially, errors associated with charge referencing can easily exceed chemistry-related shifts. Studies based on the modified Auger parameter $α'$ provide a suitable alternative and have been used previously to resolve different chemical states in Sn alloys and oxides. However, the meaningful interpretation of Auger parameter variations on Sn-based perovskite semiconductors requires fundamental studies. In this work, we perform a comprehensive Auger parameter study through systematic compositional variations of Sn halide perovskites. We find that in addition to the oxidation state, $α'$ is highly sensitivity to the composition of the halide-site, inducing shifts of up to $Δα' = 2 eV$ between ASnI$_3$ and ASnBr$_3$ type perovskites. The reported dependencies of $α'$ on the Sn oxidation state, coordination and local chemistry provide a framework that enables reliable tracking of degradation as well as X-site interaction for Sn-based perovskites and related compounds. The higher robustness and sensitivity of such studies not only enables more in-depth surface analysis of Sn-based perovskites than previously performed, but also increases reproducibility across laboratories. △ Less

Submitted 28 July, 2022; originally announced July 2022.

High-Performance Flexible All-Perovskite Tandem Solar Cells with Reduced VOC-Deficit in Wide-Bandgap Subcell

Authors: Huagui Lai, Jincheng Luo, Yannick Zwirner, Selina Olthof, Alexander Wieczorek, Fangyuan Ye, Quentin Jeangros, Xinxing Yin, Fatima Akhundova, Tianshu Ma, Rui He, Radha K. Kothandaraman, Xinyu Chin, Evgeniia Gilshtein, André Müller, Changlei Wang, Jarla Thiesbrummel, Sebastian Siol, José Márquez Prieto, Thomas Unold, Martin Stolterfoht, Cong Chen, Ayodhya N. Tiwari, Dewei Zhao, Fan Fu

Abstract: Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite tandems is lagging far behind their rigid counterp… ▽ More Among various types of perovskite-based tandem solar cells (TSCs), all-perovskite TSCs are of particular attractiveness for building- and vehicle-integrated photovoltaics, or space energy areas as they can be fabricated on flexible and lightweight substrates with a very high power-to-weight ratio. However, the efficiency of flexible all-perovskite tandems is lagging far behind their rigid counterparts primarily due to the challenges in developing efficient wide-bandgap (WBG) perovskite solar cells on the flexible substrates as well as the low open-circuit voltage (VOC) in the WBG perovskite subcell. Here, we report that the use of self-assembled monolayers as hole-selective contact effectively suppresses the interfacial recombination and allows the subsequent uniform growth of a 1.77 eV WBG perovskite with superior optoelectronic quality. In addition, we employ a post-deposition treatment with 2-thiopheneethylammonium chloride to further suppress the bulk and interfacial recombination, boosting the VOC of the WBG top cell to 1.29 V. Based on this, we present the first proof-of-concept four-terminal all-perovskite flexible TSC with a PCE of 22.6%. When integrating into two-terminal flexible tandems, we achieved 23.8% flexible all-perovskite TSCs with a superior VOC of 2.1 V, which is on par with the VOC reported on the 28% all-perovskite tandems grown on the rigid substrate. △ Less

Submitted 25 July, 2022; originally announced July 2022.

Chemical state analysis of reactively sputtered zinc vanadium nitride: The Auger parameter as a tool in materials design

Authors: Siarhei Zhuk, Sebastian Siol

Abstract: Photoelectron spectroscopy is an important tool for the development of new materials. However, especially for nitride semiconductors, the formation of surface oxides, surface band bending as well as the lack of a suitable charge reference often prevent a robust analysis. Here, we perform a comprehensive chemical state analysis of the Zn-V-N phase space using the Auger parameter concept, which is l… ▽ More Photoelectron spectroscopy is an important tool for the development of new materials. However, especially for nitride semiconductors, the formation of surface oxides, surface band bending as well as the lack of a suitable charge reference often prevent a robust analysis. Here, we perform a comprehensive chemical state analysis of the Zn-V-N phase space using the Auger parameter concept, which is less sensitive to such uncertainties. Phase-pure Zn2VN3, VN, and Zn3N2 samples are analyzed using XPS/HAXPES after transfer in inert-gas atmosphere. In addition, high-throughput chemical state analysis is performed on combinatorial Zn1-xVxN thin film libraries. The evolution of the Zn Auger parameter in Zn1-xVxN is consistent with previous mapping of the structural and functional properties. Strikingly, the study reveals a narrower stability range of wurtzite Zn1-xVxN than our previous high-throughput XRD screening, highlighting the sensitivity of the measurement approach. The procedures applied here are transferable to many other material systems and could be particularly useful for the high-throughput development of materials with low crystallinity where insights from XRD screenings are limited. △ Less

Submitted 11 April, 2022; originally announced April 2022.

Synthesis and Characterization of the Ternary Nitride Semiconductor Zn$_2$VN$_3$: Theoretical Prediction, Combinatorial Screening and Epitaxial Stabilization

Authors: Siarhei Zhuk, Andrey A. Kistanov, Simon C. Boehme, Noemie Ott, Fabio La Mattina, Michael Stiefel, Maksym V. Kovalenko, Sebastian Siol

Abstract: Computationally guided high-throughput synthesis is used to explore the Zn-V-N phase space, resulting in the synthesis of a novel ternary nitride Zn$_2$VN$_3$. Following a combinatorial PVD screening, we isolate the phase and synthesize polycrystalline Zn$_2$VN$_3$ thin films with wurtzite structure on conventional borosilicate glass substrates. In addition, we demonstrate that cation-disordered,… ▽ More Computationally guided high-throughput synthesis is used to explore the Zn-V-N phase space, resulting in the synthesis of a novel ternary nitride Zn$_2$VN$_3$. Following a combinatorial PVD screening, we isolate the phase and synthesize polycrystalline Zn$_2$VN$_3$ thin films with wurtzite structure on conventional borosilicate glass substrates. In addition, we demonstrate that cation-disordered, but phase-pure (002)-textured, Zn$_2$VN$_3$ thin films can be grown using epitaxial stabilization on α-Al2O3 (0001) substrates at remarkably low growth temperatures well below 200 °C. The structural properties and phase composition of the Zn$_2$VN$_3$ films are studied in detail using XRD and (S)TEM techniques. The composition as well as chemical state of the constituent elements are studied using RBS/ERDA as well as XPS/HAXPES methods. These analyses reveal a stoichiometric material with no oxygen contamination, besides a thin surface oxide. We find that Zn$_2$VN$_3$ is a weakly-doped p-type semiconductor demonstrating broadband room-temperature photoluminescence spanning the range between 2 eV and 3 eV. In addition, the electronic properties can be tuned over a wide range via isostructural alloying on the cation site, making this a promising material for optoelectronic applications. △ Less

Submitted 25 November, 2021; v1 submitted 1 September, 2021; originally announced September 2021.

Comments: The final version of the manuscript was published in Chemistry of Materials, November 2021. The final version of the manuscript as well as the SI documents are available at the publishers website

Advanced chemical state studies of oxide films by lab-based HAXPES combining soft and hard X-ray sources

Authors: S. Siol, J. Mann, J. Newman, T. Miyayama, K. Watanabe, P. Schmutz, C. Cancellieri, L. P. H. Jeurgens

Abstract: The greater information depth provided in Hard X-ray Photoelectron Spectroscopy (HAXPES) enables non-destructive analyses of the chemistry and electronic structure of buried interfaces. Moreover, for industrially relevant elements like Al, Si and Ti, the combined access to the Al 1s, Si 1s or Ti 1s photoelectron line and its associated Al KLL, Si KLL or Ti KLL Auger transition, as required for loc… ▽ More The greater information depth provided in Hard X-ray Photoelectron Spectroscopy (HAXPES) enables non-destructive analyses of the chemistry and electronic structure of buried interfaces. Moreover, for industrially relevant elements like Al, Si and Ti, the combined access to the Al 1s, Si 1s or Ti 1s photoelectron line and its associated Al KLL, Si KLL or Ti KLL Auger transition, as required for local chemical state analysis on the basis of the Auger parameter, is only possible with hard X-rays. Until now, such photoemission studies were only possible at synchrotron facilities. Recently however, the first commercial XPS/HAXPES systems, equipped with both soft and hard X-ray sources, have entered the market, providing unique opportunities for monitoring the local chemical state of all constituent ions in functional oxides at different probing depths, in a routine laboratory environment. Bulk-sensitive shallow core-levels can be excited using either the hard or soft X-ray source, whereas more surface-sensitive deep core-level photoelectron lines and associated Auger transitions can be measured using the hard X-ray source. As demonstrated for thin Al2O3, SiO2 and TiO2 films, the local chemical state of the constituting ions in the oxide may even be probed at near constant probing depth by careful selection of sets of photoelectron and Auger lines, as excited with the combined soft and hard X-ray sources. We highlight the potential of lab-based HAXPES for the research on functional oxides and also discuss relevant technical details regarding the calibration of the kinetic binding energy scale. △ Less

Submitted 1 November, 2019; originally announced November 2019.

A combinatorial guide to phase formation and surface passivation of tungsten titanium oxide prepared by thermal oxidation

Authors: Sebastian Siol, Noémie Ott, Michael Stiefel, Max Döbeli, Patrik Schmutz, Lars P. H. Jeurgens, Claudia Cancellieri

Abstract: TiO$_2$ and WO$_3$ are two of the most important earth-abundant electronic materials with applications in countless industries. Recently alloys of WO$_3$ and TiO$_2$ have been investigated leading to improvements of key performance indicators for a variety of applications ranging from photo-electrochemical water splitting to electrochromic smart windows. These positive reports and the complexity o… ▽ More TiO$_2$ and WO$_3$ are two of the most important earth-abundant electronic materials with applications in countless industries. Recently alloys of WO$_3$ and TiO$_2$ have been investigated leading to improvements of key performance indicators for a variety of applications ranging from photo-electrochemical water splitting to electrochromic smart windows. These positive reports and the complexity of the ternary W-Ti-O phase diagram motivate a comprehensive experimental screening of this phase space. Using combinatorial thermal oxidation of solid solution W$_{1-x}$Ti$_{x}$ precursors combined with bulk and surface analysis mapping we investigate the oxide phase formation and surface passivation of tungsten titanium oxide in the entire compositional range from pure WO$_3$ to TiO$_2$. The system shows a remarkable structural transition from monoclinic over cubic to tetragonal symmetry with increasing Ti concentration. In addition, a strong Ti surface enrichment is observed for precursor Ti-concentrations in excess of 55 at.%, resulting in the formation of a protective rutile-structured TiO$_2$ surface layer. Despite the structural transitions, the optical properties of the oxide alloys remain largely unaltered demonstrating an independent control of multiple functional properties in W$_{1-x}$Ti$_{x}$O$_{n}$. The results from this study provide valuable guidelines for future development of W$_{1-x}$Ti$_{x}$O$_{n}$ for electronic and energy applications, but also novel engineering approaches for surface functionalization and additive manufacturing of Ti-based alloys. △ Less

Submitted 27 August, 2019; originally announced August 2019.