Showing 1–16 of 16 results for author: Siebentritt, S

Sub-micron Cu(In,Ga)Se2 solar cell with efficiency of 18.2% enabled by a hole transport layer

Authors: Taowen Wang, Longfei Song, Saeed Bayat, Michele Melchiorre, Nathalie Valle, Adrian-Marie Philippe, Emmanuel Defay, Sebastjan Glinsek, Susanne Siebentritt

Abstract: Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)Se2 cells is the recombination at the backside. In standard Cu(In,Ga)Se2 backside recombination is suppressed by a bandgap gradient, acting as a back surface field. This gradient is difficult to maintain in sub-micron th… ▽ More Reducing the thickness of Cu(In,Ga)Se2 solar cells is a key objective in order to reduce production cost and to improve sustainability. The major challenge for sub-micron Cu(In,Ga)Se2 cells is the recombination at the backside. In standard Cu(In,Ga)Se2 backside recombination is suppressed by a bandgap gradient, acting as a back surface field. This gradient is difficult to maintain in sub-micron thick absorbers. In this study, a hole transport layer passivates the back contact and enables efficient sub-micron Cu(In,Ga)Se2 solar cells without the need of a Ga gradient. The backside passivation by the hole transport layer is as effective as an optimized Ga gradient, resulting in a significant increase in open-circuit voltage by 80 mV in comparison to the reference sample without passivation. Moreover, the hole transport layer exhibits good transport properties, leading to a fill factor as high as 77%. Photoluminescence quantum yield of 0.15% and solar cell efficiency above 18% are demonstrated in sub-micron Cu(In,Ga)Se2 absorbers. △ Less

Submitted 6 May, 2025; originally announced May 2025.

The effect of a band gap gradient on the radiative losses in the open circuit voltage of solar cells

Authors: Sevan Gharabeiki, Francesco Lodola, Tilly Schaaf, Taowen Wang, Michele Melchiorre, Nathalie Valle, Jérémy Niclout, Manha Ali, Yucheng Hu, Gunnar Kusch, Rachel A. Oliver, Susanne Siebentritt

Abstract: The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transition. This broadening effect has been attributed to band gap fluctuations and or to Urbach tails. In this report, we use modelling based on Planck s generalized law to distinguish between these two effects. Our results d… ▽ More The radiative open circuit voltage loss in a solar cell occurs because the absorptance spectrum near the band gap shows gradual increase rather than sharp step function like transition. This broadening effect has been attributed to band gap fluctuations and or to Urbach tails. In this report, we use modelling based on Planck s generalized law to distinguish between these two effects. Our results demonstrate that Urbach tails have only a minimal effect on the absorptance edge broadening and clarify that even an ideal direct semiconductor with no band gap fluctuations shows broadening at the absorptance onset. Furthermore, state of the art inorganic thin film solar cells often incorporate a band gap gradient across their thickness, which can further contribute to absorptance broadening. Using Cu(In,Ga)Se2 (CIGSe) absorbers as a case study, we perform a comprehensive analysis of voltage losses through absolute photoluminescence and electroluminescence spectroscopy, combined with photospectrometry and high-spatial-resolution cathodoluminescence measurements. We find that the loss analysis based on the combination of radiative, generation and non-radiative losses is complete. Samples with a graded band gap profile show more pronounced broadening of the absorptance onset and up to 16 mV higher radiative losses compared to the samples with uniform band gap. There is indication, that band gap-graded samples also have larger lateral band gap inhomogeneity. △ Less

Submitted 18 March, 2025; originally announced March 2025.

Improved sequentially processed Cu(In,Ga)(S,Se)2 by Ag alloying

Authors: Aubin JC. M. Prot, Michele Melchiorre, Tilly Schaaf, Ricardo G. Poeira, Hossam Elanzeery, Alberto Lomuscio, Souhaib Oueslati, Anastasia Zelenina, Thomas Dalibor, Gunnar Kusch, Yucheng Hu, Rachel A. Oliver, Susanne Siebentritt

Abstract: Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 absorbers, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across th… ▽ More Alloying small quantities of silver into Cu(In,Ga)Se2 was shown to improve the efficiency for wide and low band gap solar cells. We study low band gap industrial Cu(In,Ga)(S,Se)2 absorbers, substituting less than 10% of the copper with silver, using absolute photoluminescence and cathodoluminescence spectroscopy. Silver improves the grain size and promotes the interdiffusion of Ga and In across the depth of the absorber, resulting in a smoother band gap gradient. However, a certain lateral inhomogeneity is observed near the front and back sides. The non-radiative losses in the bare absorbers are reduced by up to 30 meV. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Composition dependence of electronic defects in CuGaS2

Authors: Damilola Adeleye, Mohit Sood, Michele Melchiorre, Alice Debot, Susanne Siebentritt

Abstract: CuGaS2 films grown by physical vapour deposition have been studied by photoluminescence (PL) spectroscopy, using excitation intensity and temperature dependent analyses. We observe free and bound exciton recombinations, three donor-to-acceptor (DA) transitions, and deep-level transitions. The DA transitions at ~ 2.41 eV, 2.398 eV and ~ 2.29 eV are attributed to a common donor level ~ 38+-5 meV and… ▽ More CuGaS2 films grown by physical vapour deposition have been studied by photoluminescence (PL) spectroscopy, using excitation intensity and temperature dependent analyses. We observe free and bound exciton recombinations, three donor-to-acceptor (DA) transitions, and deep-level transitions. The DA transitions at ~ 2.41 eV, 2.398 eV and ~ 2.29 eV are attributed to a common donor level ~ 38+-5 meV and three shallow acceptors at ~ 76 meV, ~ 90 meV and 210 meV above the valence band. This electronic structure is very similar to other chalcopyrite materials. The donor-acceptor transitions are accompanied by phonon replicas. Cu-rich and near-stoichiometric material is dominated by the transitions due to the acceptor at 210 meV. All films show deep-level transitions at ~ 2.15 eV and 1.85 eV due to broad deep defect bands. Slightly Cu-deficient films are dominated by intense transitions at ~ 2.45 eV, attributed to excitonic transitions and the broad defect transition at 2.15 eV. △ Less

Submitted 1 November, 2023; originally announced November 2023.

CuIn(Se,Te)2 absorbers with bandgaps < 1 eV for bottom cells in tandem applications

Authors: Thomas Paul Weiss, Mohit Sood, Aline Vanderhaegen, Susanne Siebentritt

Abstract: Thin-film solar cells reach high efficiencies and have a low carbon footprint in production. Tandem solar cells have the potential to significantly increase the efficiency of this technology, where the bottom-cell is generally composed of a Cu(In,Ga)Se2 absorber layer with bandgaps around 1 eV or higher. Here, we investigate CuIn(Se1-xTex)2 absorber layers and solar cells with bandgaps below 1 eV,… ▽ More Thin-film solar cells reach high efficiencies and have a low carbon footprint in production. Tandem solar cells have the potential to significantly increase the efficiency of this technology, where the bottom-cell is generally composed of a Cu(In,Ga)Se2 absorber layer with bandgaps around 1 eV or higher. Here, we investigate CuIn(Se1-xTex)2 absorber layers and solar cells with bandgaps below 1 eV, which will bring the benefit of an additional degree of freedom for designing current-matched 2-terminal tandem devices. We report that CuIn(Se1-xTex)2 thin films can be grown single phase by co-evaporation and that the bandgap can be reduced to the optimum range for a bottom cell (0.92 - 0.95 eV). From photoluminescence spectroscopy it is found that no additional non-radiative losses are introduced to the absorber. However, Voc losses occur in the final solar cell due to non-optimised interfaces. Nevertheless, a record device with 9 % power conversion efficiency is demonstrated with a bandgap of 0.96 eV and x=0.15. Interface recombination is identified as a major recombination channel for larger Te contents. Thus, further efficiency improvements are anticipated for improved absorber/buffer interfaces. △ Less

Submitted 30 August, 2023; originally announced August 2023.

Composition variations in Cu(In,Ga)(S,Se)2 solar cells: not a gradient, but an interlaced network of two phases

Authors: Aubin JC. M. Prot, Michele Melchiorre, Felix Dingwell, Anastasia Zelenina, Hossam Elanzeery, Alberto Lomuscio, Thomas Dalibor, Maxim Guc, Robert Fonoll-Rubio, Victor Izquierdo-Roca, Gunnar Kusch, Rachel A. Oliver, Susanne Siebentritt

Abstract: Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although this structure has successfully reduced recombination at the back contact, we demonstrate that in industrial absorbers grown in the pilot line of Avancis, the back part is a source of non-radiative recombination. Depth-re… ▽ More Record efficiency in chalcopyrite-based solar cells Cu(In,Ga)(S,Se)2 is achieved using a gallium gradient to increase the band gap of the absorber towards the back side. Although this structure has successfully reduced recombination at the back contact, we demonstrate that in industrial absorbers grown in the pilot line of Avancis, the back part is a source of non-radiative recombination. Depth-resolved photoluminescence (PL) measurements reveal two main radiative recombination paths at 1.04 eV and 1.5-1.6 eV, attributed to two phases of low and high band gap material, respectively. Instead of a continuous change in the band gap throughout the thickness of the absorber, we propose a model where discrete band gap phases interlace, creating an apparent gradient. Cathodoluminescence and Raman scattering spectroscopy confirm this result. Additionally, deep defects associated to the high gap phase reduce the absorber performance. Etching away the back part of the absorber leads to an increase of one order of magnitude in the PL intensity, i.e., 60 meV in quasi Fermi level splitting. Non-radiative voltage losses correlate linearly with the relative contribution of the high energy PL peak, suggesting that reducing the high gap phase could increase the open circuit voltage by up to 180 mV. △ Less

Submitted 5 July, 2023; originally announced July 2023.

On the origin of tail states and VOC losses in Cu(In,Ga)Se2

Authors: Omar Ramírez, Jiro Nishinaga, Felix Dingwell, Taowen Wang, Aubin Prot, Max Hilaire Wolter, Vibha Ranjan, Susanne Siebentritt

Abstract: The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail s… ▽ More The detrimental effect of tail states on the radiative and non-radiative voltage loss has been demonstrated to be a limiting factor for the open circuit voltage in Cu(In,Ga)Se2 solar cells. A strategy that has proven effective in reducing tail states is the addition of alkali metals, the effect of which has been associated with the passivation of charged defects at grain boundaries. Herein, tail states in Cu(In,Ga)Se2 are revisited by studying the effect of compositional variations and alkali incorporation into single crystals. The results demonstrate that alkalis decrease the density of tail states despite the absence of grain boundaries, suggesting that there is more to alkalis than just grain boundary effects. Moreover, an increase in doping as a result of alkali incorporation is shown to contribute to the reduced tail states, which are demonstrated to arise largely from electrostatic potential fluctuations and to be determined by grain interior properties. By analyzing the voltage loss in high-efficiency polycrystalline and single crystalline devices, this work presents a model that explains the entirety of the voltage loss in Cu(In,Ga)Se2 based on the combined effect of doping on tail states and VOC. △ Less

Submitted 3 December, 2022; originally announced December 2022.

Metastable defects decrease the fill factor of solar cells

Authors: Thomas Paul Weiss, Omar Ramírez, Stefan Paetel, Wolfram Witte, Jiro Nishinaga, Thomas Feurer, Susanne Siebentritt

Abstract: Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %. Yet, the fill factor of these solar cells, with best values around 80 %, is relatively low (Si reaches 84.9%) mostly due to diode factors greater than one. Recently, we proposed metastable defects, a general feature of the Cu(In,Ga)Se2 alloy, to be the origin of the increased diode factor. We measure the diode factor of t… ▽ More Cu(In,Ga)Se2 based solar cells exceed power conversion efficiencies of 23 %. Yet, the fill factor of these solar cells, with best values around 80 %, is relatively low (Si reaches 84.9%) mostly due to diode factors greater than one. Recently, we proposed metastable defects, a general feature of the Cu(In,Ga)Se2 alloy, to be the origin of the increased diode factor. We measure the diode factor of the bare absorber layers by excitation-dependent photoluminescence. For high quality and thus high luminescent polycrystalline absorbers, we evaluate the diode factor excitation dependence over four orders of magnitude. Using simulations and the model of metastable defects, we can well describe the experimental findings on n- and p-type epitaxial films as well as the polycrystalline absorbers, providing additional evidence for this model. We find that the diode factors measured optically by photoluminescence impose a lower limit for the diode factor measured electrically on a finished solar cell. Interestingly, the lowest diode factor (optical and electrical) and consequently highest fill factor of 81.0 % is obtained by Ag alloying, i.e. an (Ag,Cu)(In,Ga)Se2 absorber. This finding hints to a pathway to increase fill factors and thus efficiencies for Cu(In,Ga)Se2-based solar cells. △ Less

Submitted 26 April, 2022; originally announced May 2022.

Post-deposition annealing and interfacial ALD buffer layers of Sb$_2$Se$_3$/CdS stacks for reduced interface recombination and increased open-circuit voltages

Authors: Thomas Paul Weiss, Ignacio Minguez-Bacho, Elena Zuccalà, Michele Melchiorre, Nathalie Valle, Brahime El Adib, Tadahiro Yokosawa, Erdmann Spiecker, Julien Bachmann, Phillip J. Dale, Susanne Siebentritt

Abstract: Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recom… ▽ More Currently, Sb$_2$Se$_3$ thin films receive considerable research interest as a solar cell absorber material. When completed into a device stack, the major bottleneck for further device improvement is the open circuit voltage, which is the focus of the work presented here. Polycrystalline thin film Sb$_2$Se$_3$ absorbers and solar cells are prepared in substrate configuration and the dominant recombination path is studied using photoluminescence spectroscopy and temperature dependent current-voltage characteristics. It is found that a post-deposition annealing after the CdS buffer layer deposition can effectively remove interface recombination since the activation energy of the dominant recombination path becomes equal to the bandgap of the Sb$_2$Se$_3$ absorber. The increased activation energy is accompanied by an increased photoluminescence yield, i.e. reduced non-radiative recombination. Finished Sb$_2$Se$_3$ solar cell devices reach open circuit voltages as high as 485 mV. Contrarily, the short-circuit current density of these devices is limiting the efficiency after the post-deposition annealing. It is shown that atomic layer deposited intermediate buffer layers such as TiO$_2$ or Sb$_2$Se$_3$ can pave the way for overcoming this limitation. △ Less

Submitted 26 April, 2022; originally announced April 2022.

How much gallium do we need for a p-type Cu(In,Ga)Se2?

Authors: Omar Ramírez, Evandro Martin Lanzoni, Ricardo G. Poeira, Thomas P. Weiss, Renaud Leturcq, Alex Redinger, Susanne Siebentritt

Abstract: Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no… ▽ More Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growth conditions and stoichiometry: N-type is obtained when grown Cu-poor, Se-poor and alkali-free. CuGaSe2, on the other hand, is found to be always a P-type semiconductor that seems to resist all kinds of N-type doping no matter whether it comes from native defects or extrinsic impurities. In this contribution, we study the N-to-P transition in Cu-poor Cu(In,Ga)Se2 single crystals in dependence of the gallium content. Our results show that Cu(In,Ga)Se2 can still be grown as an N-type semiconductor until the gallium content reaches the critical concentration of 15-19%, where the N-to-P transition occurs. Furthermore, trends in the Seebeck coefficient and activation energies extracted from temperature-dependent conductivity measurements, demonstrate that the carrier concentration drops by around two orders of magnitude near the transition concentration. Our proposed model explains the N-to-P transition based on the differences in formation energies of donor and acceptor defects caused by the addition of gallium. △ Less

Submitted 27 April, 2022; originally announced April 2022.

Solar cell efficiency, diode factor and interface recombination: insights from photoluminescence

Authors: T. Wang, F. Ehre, T. P. Weiss, B. Veith-Wolf, V. Titova, N. Valle, M. Melchiorre, J. Schmidt, S. Siebentritt

Abstract: Metastable defects can decisively influence the diode factor and thus the efficiency of a solar cell. The diode factor is also influenced by the doping level and the recombination mechanisms in the solar cell. Here we quantify how the various parameters change the diode factor by photoluminescence measurements and simulations. In addition, we show that backside recombination reduces the open circu… ▽ More Metastable defects can decisively influence the diode factor and thus the efficiency of a solar cell. The diode factor is also influenced by the doping level and the recombination mechanisms in the solar cell. Here we quantify how the various parameters change the diode factor by photoluminescence measurements and simulations. In addition, we show that backside recombination reduces the open circuit voltage in CuInSe2 solar cells by more than 40 mV. Passivation by a Ga gradient is shown to be as efficient as a passivation by dielectric layers. Increased backside recombination reduces the diode factor, not because of less metastable defect transformation but because of a sublinear increase in photo generated carriers with excitation. This reduction in diode factor is unwanted, since the increased recombination reduces the voltage. A higher doping level, on the other hand, reduces the diode factor, thereby increasing the fill factor, and at the same time increases the voltage. △ Less

Submitted 13 April, 2022; originally announced April 2022.

Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency

Authors: Mohit Sood, Poorani Gnanasambandan, Damilola Adeleye, Sudhanshu Shukla, Noureddine Adjeroud, Renaud Leturcq, Susanne Siebentritt

Abstract: Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS interface. Reducing this loss necessitates the substitution of CdS by an alternative buffer layer. However, the substitute buffer layer may introduce electrical barriers in the device due to unfavorable band alignment at the… ▽ More Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS interface. Reducing this loss necessitates the substitution of CdS by an alternative buffer layer. However, the substitute buffer layer may introduce electrical barriers in the device due to unfavorable band alignment at the other interfaces such as between buffer/ZnO i-layer. This study aims to reduce interface recombinations and eliminate electrical barriers in Cu(In,Ga)S2 solar cells using a combination of Zn1-xMgxO and Al-doped Zn1-xMgxO buffer and i-layer combination deposited using atomic layer deposition and magnetron sputtering, respectively. The devices prepared with these layers are characterized by current-voltage and photoluminescence measurements. Numerical simulations are performed to comprehend the influence of electrical barriers on the device characteristics. An optimal composition of Zn1 xMgxO x = 0.27 is identified for a suitable conduction band alignment with Cu(In,Ga)S2 with a bandgap of ~1.6 eV, suppressing interface recombination and avoiding barriers. Optimized buffer composition together with a suitable i-layer led to a device with 14 % efficiency and an open-circuit voltage of 943 mV. A comparison of optoelectronic measurements for devices prepared with ZnO and Al:(Zn,Mg)O shows the necessity to replace the ZnO i-layer with Al:(Zn,Mg)O i-layer for a high-efficiency device. △ Less

Submitted 22 February, 2022; originally announced February 2022.

Origin of interface limitation in CuInS$_2$ based solar cells

Authors: Mohit Sood, Jakob Bombsch, Alberto Lomuscio, Sudhanshu Shukla, Alberto Lomuscio, Claudia Hartmann, Johannes Frisch, Wolfgang Bremsteller, Shigenori Ueda, Regan G. Wilks, Marcus Bär, Susanne Siebentritt

Abstract: Copper indium disulfide (CuInS$_2$) grown under Cu-rich conditions exhibits high optical quality but suffers predominantly from charge carrier interface recombination resulting in poor solar cell performance. An unfavorable cliff like conduction band alignment at the buffer/CuInS$_2$ interface could be a possible cause of enhanced interface recombination in the device. In this work, we exploit dir… ▽ More Copper indium disulfide (CuInS$_2$) grown under Cu-rich conditions exhibits high optical quality but suffers predominantly from charge carrier interface recombination resulting in poor solar cell performance. An unfavorable cliff like conduction band alignment at the buffer/CuInS$_2$ interface could be a possible cause of enhanced interface recombination in the device. In this work, we exploit direct and inverse photoelectron spectroscopy together with electrical characterization to investigate the cause of interface recombination in Zn(O,S)/CuInS$_2$ devices. Temperature-dependent current-voltage analysis indeed reveal an activation energy of the dominant charge carrier recombination path, considerably smaller than the absorber bandgap, confirming the dominant recombination channel to be present at the Zn(O,S)/CuInS2 interface. However, photoelectron spectroscopy measurements indicate a small spike like conduction band offset of 0.1 eV at the Zn(O,S) CuInS$_2$ interface, excluding an unfavorable energy level alignment to be the prominent cause for strong interface recombination. The observed band bending upon interface formation also rules out Fermi level pinning as the main reason, leaving near-interface defects (as recently observed in Cu-rich CuInSe2)1 as the likely reason for the performance limiting interface recombination. △ Less

Submitted 13 October, 2021; originally announced October 2021.

The impact of Kelvin probe force microscopy operation modes and environment on grain boundary band bending in perovskite and Cu(In,Ga)Se2 solar cells

Authors: Evandro Martin Lanzoni, Thibaut Gallet, Conrad Spindler, Omar Ramirez, Christian Kameni Boumenou, Susanne Siebentritt, Alex Redinger

Abstract: An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very high and hence limit the solar cell device performance. Kelvin Probe Force Microscopy (KPFM) is the method of choice to investigate GB band bending on the nanometer scale and thereby helps to deve… ▽ More An in-depth understanding of the electronic properties of grain boundaries (GB) in polycrystalline semiconductor absorbers is of high importance since their charge carrier recombination rates may be very high and hence limit the solar cell device performance. Kelvin Probe Force Microscopy (KPFM) is the method of choice to investigate GB band bending on the nanometer scale and thereby helps to develop passivation strategies. Here, it is shown that amplitude modulation AM-KPFM, which is by far the most common KPFM measurement mode, is not suitable to measure workfunction variations at GBs on rough samples, such as Cu(In,Ga)Se2 and CH3NH3PbI3. This is a direct consequence of a change in the cantilever-sample distance that varies on rough samples. Furthermore, we critically discuss the impact of different environments (air versus vacuum) and show that air exposure alters the GB and facet contrast, which leads to erroneous interpretations of the GB physics. Frequency modulation FM-KPFM measurements on non-air-exposed CIGSe and perovskite absorbers show that the amount of band bending measured at the GB is negligible and that the electronic landscape of the semiconductor surface is dominated by facet-related contrast due to the polycrystalline nature of the absorbers. △ Less

Submitted 7 April, 2021; originally announced April 2021.

Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells

Authors: Mohit Sood, Aleksander Urbaniak, Christian Kameni Boumenou, Thomas Weiss, Hossam Elanzeery, Finn Babbe, Florian Werner, Michele Melchiorre, Susanne Siebentritt

Abstract: The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex) i.e. an additional VOC deficit. Higher VOC,ex value aim require a comprehensive understanding of connection between VOC deficit and interface recombination. He… ▽ More The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex) i.e. an additional VOC deficit. Higher VOC,ex value aim require a comprehensive understanding of connection between VOC deficit and interface recombination. Here, a deep near-surface defect model at the absorber/buffer interface is developed for copper indium di-selenide solar cells grown under Cu excess conditions to explain the disparity between VOC,in and VOC,ex.. The model is based on experimental analysis of admittance spectroscopy and deep-level transient spectroscopy, which show the signature of deep acceptor defect. Further, temperature-dependent current-voltage measurements confirm the presence of near surface defects as the cause of interface recombination. The numerical simulations show strong decrease in the local VOC,in near the absorber/buffer interface leading to a VOC deficit in the device. This loss mechanism leads to interface recombination without a reduced interface bandgap or Fermi level pinning. Further, these findings demonstrate that the VOC,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current voltage measurements to identify the cause of interface recombination in the devices. △ Less

Submitted 29 March, 2021; originally announced March 2021.

Comments: 28 pages,14 figures, 1 table

Passivating Surface Defects and Reducing Interface Recombination in CuInS2 Solar Cells by a Facile Solution Treatment

Authors: Mohit Sood, Alberto Lomuscio, Florian Werner, Aleksandra Nikolaeva, Phillip J. Dale, Michele Melchiorre, Jerome Guillot, Daniel Abou-Ras, Susanne Siebentritt

Abstract: Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open circuit voltage (VOC) with respect to the qFLs. The present work explores a facile sulfur-based post-deposition treatment (S… ▽ More Interface recombination at the absorber buffer interface impedes the efficiency of a solar cell with an otherwise excellent absorber. The internal voltage or the quasi-Fermi level splitting (qFLs) measures the quality of the absorber. Interface recombination reduces the open circuit voltage (VOC) with respect to the qFLs. The present work explores a facile sulfur-based post-deposition treatment (S-PDT) to passivate the interface of CuInS2 thin films grown under Cu-rich conditions, which show excellent qFLs values, but much lower VOCs. The CuInS2 absorbers are treated in three different S-containing solutions at 80 oC. Absolute calibrated photoluminescence and current-voltage measurements demonstrate a reduction of the deficit between qFLs and VOC in the best S-PDT device by almost one third compared to the untreated device. Analysis of temperature dependence of the open-circuit voltage shows increased activation energy for the dominant recombination path, indicating less interface recombination. In addition, capacitance transient measurements reveal the presence of slow metastable defects in the untreated solar cell. The slow response is considerably reduced by the S-PDT, suggesting passivation of these slow metastable defects. The results demonstrate the effectiveness of solution based S-treatment in passivating defects, presenting a promising strategy to explore and reduce defect states near the interface of chalcogenide semiconductors. △ Less

Submitted 29 January, 2021; originally announced January 2021.

Comments: 43 pages, 14 figures, 5 tables, under review