Showing 1–1 of 1 results for author: Shwarts, Y M

Investigations of thermometric characteristics of p+-n - type GaP diodes

Authors: V. A. Krasnov, Yu. M. Shwarts, M. M. Shwarts, D. P. Kopko, A. M. Fonkich, S. Yu. Yerochin, S. V. Shutov, N. I Sypko

Abstract: The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics of the test diodes were measured in the temperature range of 80 / 520K and their basic technical characteristics were determined. An availability o… ▽ More The technique of obtaining of p+-n-type gallium phosphide diode epitaxial structures from liquid phase was developed as well as pilot samples of diode temperature sensors were fabricated based on them. Thermometric and current-voltage characteristics of the test diodes were measured in the temperature range of 80 / 520K and their basic technical characteristics were determined. An availability of application of the structures developed as sensing elements of high-temperature heat sensors was shown. △ Less

Submitted 25 June, 2008; originally announced June 2008.

Comments: 9 pages, 5 figures